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The simulated gm/gds versus gate bias (for various L) for an lv_nmos looks quite odd for short channels (see plot below). Does the measured data support this? I found only plots of gds versus drain bias in the documentation. The netlist to duplicate this plot is below.
** sch_path: /foss/designs/gds_n.sch
**.subckt gds_n
Xm1 d g GND b sg13_lv_nmos W={Wx} L={Lx} ng=1 m=1
Vgs g GND 0.6
Vds d GND 1.2
Vsb GND b 0
**** begin user architecture code
.lib /foss/pdks/ihp-sg13g2/libs.tech/ngspice/models/cornerMOSlv.lib mos_tt
Also, I am surprised to see the sign of gm flip negative when VDS=0. I know it's a small value, but I've never seen a MOS model that does this. The model expression should give exactly zero in this condition.
The simulated gm/gds versus gate bias (for various L) for an lv_nmos looks quite odd for short channels (see plot below). Does the measured data support this? I found only plots of gds versus drain bias in the documentation. The netlist to duplicate this plot is below.
** sch_path: /foss/designs/gds_n.sch
**.subckt gds_n
Xm1 d g GND b sg13_lv_nmos W={Wx} L={Lx} ng=1 m=1
Vgs g GND 0.6
Vds d GND 1.2
Vsb GND b 0
**** begin user architecture code
.lib /foss/pdks/ihp-sg13g2/libs.tech/ngspice/models/cornerMOSlv.lib mos_tt
.param temp=27
.param Wx=5u
.param Lx=0.13u
.dc Vgs 0 1.2 0.01
.save @n.xm1.nsg13_lv_nmos[gm]
.save @n.xm1.nsg13_lv_nmos[gds]
.control
*pre_osdi ./psp103_nqs.osdi
foreach L_val 0.13u 0.14u 0.15u 0.16u 0.17u 0.18u 0.19u 0.2u 0.3u 0.4u 0.5u 1u 2u 3u
alterparam Lx = $L_val
reset
run
let av=@n.xm1.nsg13_lv_nmos[gm]/@n.xm1.nsg13_lv_nmos[gds]
end
plot all.av
.endc
**** end user architecture code
**.ends
.GLOBAL GND
.end
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