library.bib

@mastersthesis{stephen-thesis,
    author = {Jovanovic, Stephen M},

    school = {McMaster University},
    title = {{Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates}},
    year = {2013}
}

@INPROCEEDINGS{A.OltersdorfM.Zimmer2009,
  author = {{A. Oltersdorf, M. Zimmer}, J. Rentsch},
  title = {{Analysis of Metal Impurities in Wet Chemical Processes by {IC}P
    OES and AAS}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {2049},
  doi = {10.4229/24thEUPVSEC2009-2DV.1.16},

  keywords = {aas,cleaning,icp oes,metal impurities}
}

@PROCEEDINGS{A.Richter2009,
  editor = {Conference, 24th European P V Solar Energy and Exhibition},
  title = {{AMORPHOUS SILICON PASSIVATION APPLIED TO THE FRONT SIDE BORON {EMI}TTER
    OF n-TYPE SILICON SOLAR CELLS}},
  year = {2009},
  abstract = {Hydrogenated amorphous silicon (a-Si:H) was used to passivated the
    front side boron emitter of n-type silicon solar cells. The main
    aspect was to investigate the parasitic absorption behavior of the
    a-Si:H layers on the so-lar cells front side with different thicknesses
    between 5 nm and 20 nm. Therefore planar solar cells featuring a
    diffused boron emitter and a diffused back surface field were fabricated.
    The cells reached energy conversion efficiencies up to 17.8\% with
    an open- circuit voltage VOC of 641 mV for an a-Si:H thickness of
    15 nm. Analogous processed reference cells, with an Al2O3 passivated
    emitter achieved an efficiency of 19\% and a VOC of 658 mV.},
  author = {{A. Richter J. Benick}, M Hermle and Glunz, S. W.},
  booktitle = {24th EUPVSEC, Hamburg, Germany},

  keywords = {a-Si,emitter,n-type solar cells,passivation}
}

@PROCEEDINGS{A.RichterJ.Benick2009,
  editor = {Conference, 24th European P V Solar Energy and Exhibition},
  title = {{AMORPHOUS SILICON PASSIVATION APPLIED TO THE FRONT SIDE BORON {EMI}TTER
    OF n-TYPE SILICON SOLAR CELLS}},
  year = {2009},
  abstract = {Hydrogenated amorphous silicon (a-Si:H) was used to passivated the
    front side boron emitter of n-type silicon solar cells. The main
    aspect was to investigate the parasitic absorption behavior of the
    a-Si:H layers on the so-lar cells front side with different thicknesses
    between 5 nm and 20 nm. Therefore planar solar cells featuring a
    diffused boron emitter and a diffused back surface field were fabricated.
    The cells reached energy conversion efficiencies up to 17.8\% with
    an open- circuit voltage VOC of 641 mV for an a-Si:H thickness of
    15 nm. Analogous processed reference cells, with an Al2O3 passivated
    emitter achieved an efficiency of 19\% and a VOC of 658 mV.},
  author = {{A. Richter J. Benick}, M Hermle and Glunz, S. W.},
  booktitle = {24th EUPVSEC, Hamburg, Germany},

  keywords = {a-Si,emitter,n-type solar cells,passivation}
}

@PHDTHESIS{Abbott2006,
  author = {Abbott, M. D.},
  title = {{Advanced Laser Processing and Photoluminescence Characterisation
    of High Efficiency Silicon Solar Cells}},
  year = {2006},

  number = {June},
  school = {New South Wales, Australia}
}

@PHDTHESIS{Abbott2006d,
  author = {Abbott, M. D.},
  title = {{Advanced Laser Processing and Photoluminescence Characterisation
    of High Efficiency Silicon Solar Cells}},
  year = {2006},

  number = {June},
  school = {New South Wales, Australia}
}

@PHDTHESIS{Abbott2006e,
  author = {Abbott, M. D.},
  title = {{Advanced Laser Processing and Photoluminescence Characterisation
    of High Efficiency Silicon Solar Cells}},
  year = {2006},

  number = {June},
  school = {New South Wales, Australia}
}

@ARTICLE{Abbott2006a,
  author = {Abbott, M. D. and Cotter, J. and Fisher, K.},
  title = {{N-Type Bifacial Solar Cells with Laser Doped Contacts}},
  year = {2006},
  volume = {61},
  number = {0},
  month = may,
  pages = {988--991},
  doi = {10.1109/WCPEC.2006.279284},


  isbn = {1-4244-0016-3},
  journal = {IEEE 4th World Conference on Photovoltaic Energy Conference},
  publisher = {Ieee}
}

@ARTICLE{Abbott2006b,
  author = {Abbott, M. D. and Cotter, J. and Fisher, K.},
  title = {{N-Type Bifacial Solar Cells with Laser Doped Contacts}},
  year = {2006},
  volume = {61},
  number = {0},
  month = may,
  pages = {988--991},
  doi = {10.1109/WCPEC.2006.279284},


  isbn = {1-4244-0016-3},
  journal = {IEEE 4th World Conference on Photovoltaic Energy Conference},
  publisher = {Ieee}
}

@ARTICLE{Abbott2006c,
  author = {Abbott, M. D. and Cotter, J. and Fisher, K.},
  title = {{N-Type Bifacial Solar Cells with Laser Doped Contacts}},
  year = {2006},
  volume = {61},
  number = {0},
  month = may,
  pages = {988--991},
  doi = {10.1109/WCPEC.2006.279284},


  isbn = {1-4244-0016-3},
  journal = {IEEE 4th World Conference on Photovoltaic Energy Conference},
  publisher = {Ieee}
}

@ARTICLE{Abbott1990,
  author = {Abbott, M. D. and Parker, BA},
  title = {{The structures of fully eutectic aluminium-silicon alloy castings}},
  year = {1990},
  volume = {25},
  number = {4},
  pages = {2100--2106},


  journal = {Journal of Materials Science},
  publisher = {Springer}
}

@ARTICLE{Abbott1990a,
  author = {Abbott, M. D. and Parker, BA},
  title = {{The structures of fully eutectic aluminium-silicon alloy castings}},
  year = {1990},
  volume = {25},
  number = {4},
  pages = {2100--2106},


  journal = {Journal of Materials Science},
  publisher = {Springer}
}

@PHDTHESIS{Aberle1991,
  author = {Aberle, A},
  title = {{Untersuchungen zur Oberfl\"{a}chenpassivierung von hocheffizienten
    Silicium-Solarzellen}},
  year = {1991},

}

@PHDTHESIS{Aberle1991a,
  author = {Aberle, A.G.},
  title = {{Untersuchungen zur Oberfl\"{a}chenpassivierung von hocheffizienten
    Silicium-Solarzellen}},
  year = {1991},

}

@ARTICLE{Aberle1992,
  author = {Aberle, A and Glunz, S.W. and Warta, Wilhelm},
  title = {{Impact of illumination level and oxide parameters on Shockley-Read-Hall
    recombination at the Si-SiO2 interface}},
  year = {1992},
  volume = {71},
  number = {9},
  pages = {4422},
  issn = {00218979},
  doi = {10.1063/1.350782},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Aberle1992a,
  author = {Aberle, A.G. and Glunz, S. W. and Warta, Wilhelm},
  title = {{Impact of illumination level and oxide parameters on Shockley-Read-Hall
    recombination at the Si-SiO2 interface}},
  year = {1992},
  volume = {71},
  number = {9},
  pages = {4422},
  issn = {00218979},
  doi = {10.1063/1.350782},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Aberle1992b,
  author = {Aberle, A and Glut-q, S and Warta, W},
  title = {{Impact of illumination level and oxide parameters on Shockley-Read-Hall
    recombination at the Si-Si02 interface}},
  year = {1992},
  pages = {4422--4431},

  journal = {J. Appl. Phys}
}

@ARTICLE{Aberle1992c,
  author = {Aberle, AG and Glut-q, S and Warta, W},
  title = {{Impact of illumination level and oxide parameters on Shockley-Read-Hall
    recombination at the Si-Si02 interface}},
  year = {1992},
  pages = {4422--4431},

  journal = {J. Appl. Phys}
}

@ARTICLE{Aberle1994,
  author = {Aberle, A.G. and Heiser, Gernot and Green, M. A.},
  title = {{Two-dimensional numerical optimization study of the rear contact
    geometry of high-efficiency silicon solar cells}},
  year = {1994},
  volume = {75},
  number = {10},
  pages = {5391},
  issn = {00218979},
  doi = {10.1063/1.355694},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Aberle1990,
  author = {Aberle, A.G. and Warta, W and Knobloch, J and Voss, B},
  title = {{Surface passivation of high efficiency silicon solar cells}},
  year = {1990},

  journal = {20th IEEE Conference}
}

@ARTICLE{Aberle1990a,
  author = {Aberle, A.G. and Warta, W and Knobloch, J and Voss, B},
  title = {{Surface passivation of high efficiency silicon solar cells}},
  year = {1990},

  journal = {20th IEEE Conference}
}

@ARTICLE{Aberle1990b,
  author = {Aberle, A and Warta, W and Knobloch, J and Voss, B},
  title = {{Surface passivation of high efficiency silicon solar cells}},
  year = {1990},

  journal = {20th IEEE Conference}
}

@ARTICLE{Abken2002a,
  author = {Abken, A},
  title = {{Sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers as back contacts for CdTe/CdS
    solar cells}},
  year = {2002},
  volume = {403-404},
  month = feb,
  pages = {216--222},
  issn = {00406090},
  doi = {10.1016/S0040-6090(01)01527-9},

  annote = { From Duplicate 1 ( Sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers as back
    contacts for CdTe/CdS solar cells - Abken, A )


     From Duplicate 2 ( Sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers as back
    contacts for CdTe/CdS solar cells - Abken, A )






     },

  journal = {Thin Solid Films},
  keywords = {back contacts,cdteycds thin film solar,cells,sb 2 te 3,stability}
}

@ARTICLE{ABRAMOF2007,
  author = {Abramof, P G and Miranda, C R B and Beloto, A F and Ueta, A Y and
    Ferreira, N G},
  title = {{An investigation of natural oxidation process on stain-etched nanoporous
    silicon by micro-Raman spectroscopy}},
  year = {2007},
  volume = {253},
  month = jun,
  pages = {7065--7068},
  issn = {01694332},
  doi = {10.1016/j.apsusc.2007.02.049},

  keywords = {oxidation,phonon confinement model,porous silicon,raman spectrocospy}
}

@ARTICLE{Ag,
  author = {Ag, Solarwatt},
  title = {{MWT cell designs for easy module manufacturing}},
  pages = {1--15},

}

@INPROCEEDINGS{Agostinelli2006c,
  author = {Agostinelli, G. and Choulat, P and Beaucarne, G},
  title = {{Rear surface passivation for industrial solar cells on thin substrates}},
  booktitle = {4th IEEE World Conference on Photovoltaic Energy Conversion, Waikoloa,
    Hawaii},
  year = {2006},
  pages = {2--5},

}

@INPROCEEDINGS{Agostinelli2006a,
  author = {Agostinelli, G. and Choulat, P. and Dekkers, H.F.W. and Ma, Y. and
    Beaucarne, Guy},
  title = {{Silicon solar cells on ultra-thin substrates for large scale production}},
  booktitle = {21st EUPVSEC, Dresden, Germany},
  year = {2006},


  keywords = {manufacturing and processing,passivation,solar cell efficiencies}
}

@INPROCEEDINGS{Agostinelli2006b,
  author = {Agostinelli, G. and Choulat, P. and Dekkers, H.F.W. and Ma, Y. and
    Beaucarne, Guy},
  title = {{Silicon solar cells on ultra-thin substrates for large scale production}},
  booktitle = {21st EUPVSEC, Dresden, Germany},
  year = {2006},


  keywords = {manufacturing and processing,passivation,solar cell efficiencies}
}

@INPROCEEDINGS{Agostinelli2006,
  author = {Agostinelli, G. and Choulat, P. and Dekkers, H.F.W. and Vermari\"{e}n,
    E. and Beaucarne, Guy},
  title = {{Rear surface passivation for industrial solar cells on thin substrates}},
  booktitle = {4th IEEE WCPVEC (unpublished)},
  year = {2006},
  pages = {2--5},

}

@INPROCEEDINGS{Agostinelli2006d,
  author = {Agostinelli, G. and Choulat, P. and Dekkers, H.F.W. and Vermari\"{e}n,
    E. and Beaucarne, Guy},
  title = {{Rear surface passivation for industrial solar cells on thin substrates}},
  booktitle = {4th IEEE WCPVEC (unpublished)},
  year = {2006},
  pages = {2--5},

}

@INPROCEEDINGS{Agostinellia,
  author = {Agostinelli, G. and Choulat, P. and Dekkers, H.F.W. and Wolf, S.
    De and Beaucarne, Guy},
  title = {screen printed large area crystalline silicon solar cells on thin
    substrates},
  booktitle = {20th EUPVSEC, Barcelona, Spain},
  year = {2005},
  pages = {1--4},

  keywords = {back surface field,manufacturing and processing,passivation}
}

@ARTICLE{Ahmad1972,
  author = {Ahmad, K.},
  title = {{Contact potentials and barrier heights in gold-silicon and aluminum-silicon
    contacts}},
  year = {1972},
  pages = {4706},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Ahmad1992,
  author = {Ahmad, Munawar and Akhter, P. and Mufti, a.},
  title = {{Effects of Temperature on the Performance Parameters of Bsf Silicon
    Solar Cells}},
  year = {1992},
  volume = {13},
  number = {1},
  pages = {11--17},
  issn = {1478-6451},
  doi = {10.1080/01425919208909770},


  journal = {International Journal of Sustainable Energy}
}

@ARTICLE{Aibin2009,
  author = {Aibin, Hu and Wenwu, Wang and Qiuxia, Xu},
  title = {{(NH 4 ) 2 S treatment of the Si (100) surface and its effects on
    Al/Si Schottky barrier heights}},
  year = {2009},
  volume = {30},
  number = {8},
  month = aug,
  pages = {084001},
  issn = {1674-4926},
  doi = {10.1088/1674-4926/30/8/084001},


  journal = {Journal of Semiconductors},
  keywords = {084001,10,1088,1674-4926,2 s treatment,30,8,dangling bonds,doi,i,nh
    4,schottky barrier,v}
}

@ARTICLE{Aibin2009a,
  author = {Aibin, Hu and Wenwu, Wang and Qiuxia, Xu},
  title = {{(NH 4 ) 2 S treatment of the Si (100) surface and its effects on
    Al/Si Schottky barrier heights}},
  year = {2009},
  volume = {30},
  number = {8},
  month = aug,
  pages = {084001},
  issn = {1674-4926},
  doi = {10.1088/1674-4926/30/8/084001},


  journal = {Journal of Semiconductors},
  keywords = {084001,10,1088,1674-4926,2 s treatment,30,8,dangling bonds,doi,i,nh
    4,schottky barrier,v}
}

@ARTICLE{Aijuan2009,
  author = {Aijuan, G. and Famin, Y. and Lihui, G. and Dong, J. and Shimeng,
    F.},
  title = {{Effect of the back surface topography on the efficiency in silicon
    solar cells}},
  year = {2009},
  volume = {30},
  number = {7},
  pages = {074003},

  journal = {Journal of Semiconductors},
  keywords = {074003,10,1088,1674-4926,30,7,7340c,8160,8630j,aluminum,back surface
    field,doi,pacc,planar back surface,silicon contact},
  publisher = {Institute of Physics Publishing}
}

@ARTICLE{Aiken,
  author = {Aiken, D. and Stan, M. and Murray, C. and Sharps, P. and Hills, J.
    and Clevenger, B.},
  title = {{Temperature dependent spectral response measurements for III-V multi-junction
    solar cells}},
  pages = {828--831},
  doi = {10.1109/PVSC.2002.1190704},


  isbn = {0-7803-7471-1},
  journal = {Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists
    Conference, 2002.},
  publisher = {Ieee}
}

@ARTICLE{Aikena,
  author = {Aiken, D. and Stan, M. and Murray, C. and Sharps, P. and Hills, J.
    and Clevenger, B.},
  title = {{Temperature dependent spectral response measurements for III-V multi-junction
    solar cells}},
  pages = {828--831},
  doi = {10.1109/PVSC.2002.1190704},


  isbn = {0-7803-7471-1},
  journal = {Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists
    Conference, 2002.},
  publisher = {Ieee}
}

@INPROCEEDINGS{Aindow1989,
  author = {Aindow, M and Eaglesham, D J and Pond, R C and M, Smith L and J,
    Thompson and T, Woodhouse K},
  title = {{An electron microscopy study of MOCVD cadmium telluride on sapphire}},
  booktitle = {Microscopy of Semiconducing Materials Conference},
  year = {1989},
  pages = {223},

}

@INPROCEEDINGS{Aindow1989a,
  author = {Aindow, M and Eaglesham, D J and Pond, R C and M, Smith L and J,
    Thompson and T, Woodhouse K},
  title = {{An electron microscopy study of MOCVD cadmium telluride on sapphire}},
  booktitle = {Microscopy of Semiconducing Materials Conference},
  year = {1989},
  pages = {223},

}

@ARTICLE{Akahane2004,
  author = {Akahane, K. and Yamamoto, N. and Gozu, S. and Ohtani, N.},
  title = {{Heteroepitaxial growth of GaSb on Si(001) substrates}},
  year = {2004},
  volume = {264},
  number = {1-3},
  month = mar,
  pages = {21--25},
  issn = {00220248},


  journal = {Journal of Crystal Growth},
  keywords = {a1,a3,antimonides,b1,b2,molecular beam epitaxy,nanostructures,semiconducting
    iii,v materials}
}

@ARTICLE{Akahane2006,
  author = {Akahane, K and Yamamoto, N and Gozu, S and Ueta, a and Ohtani, N},
  title = {{Residual carrier density in GaSb grown on Si substrates}},
  year = {2006},
  volume = {515},
  number = {2},
  month = oct,
  pages = {748--751},
  issn = {00406090},
  doi = {10.1016/j.tsf.2005.12.244},


  journal = {Thin Solid Films},
  keywords = {a3,antimonides,b1,b2,molecular beam epitaxy,semiconducting iii,v materials}
}

@ARTICLE{Akahane2006a,
  author = {Akahane, K. and Yamamoto, N. and Gozu, S. and Ueta, A. and Ohtani,
    N.},
  title = {{Residual carrier density in GaSb grown on Si substrates}},
  year = {2006},
  volume = {515},
  number = {2},
  month = oct,
  pages = {748--751},
  issn = {00406090},
  doi = {10.1016/j.tsf.2005.12.244},


  journal = {Thin Solid Films},
  keywords = {a3,antimonides,b1,b2,molecular beam epitaxy,semiconducting iii,v materials}
}

@ARTICLE{Akimov2009,
  author = {Akimov, Yu a and Koh, W S and Ostrikov, K},
  title = {{Enhancement of optical absorption in thin-film solar cells through
    the excitation of higher-order nanoparticle plasmon modes.}},
  year = {2009},
  volume = {17},
  number = {12},
  month = jun,
  pages = {10195--205},
  issn = {1094-4087},

  abstract = {Recent research in the rapidly emerging field of plasmonics has shown
    the potential to significantly enhance light trapping inside thin-film
    solar cells by using metallic nanoparticles. In this article it is
    demonstrated the plasmon enhancement of optical absorption in amorphous
    silicon solar cells by using silver nanoparticles. Based on the analysis
    of the higher-order surface plasmon modes, it is shown how spectral
    positions of the surface plasmons affect the plasmonic enhancement
    of thin-film solar cells. By using the predictive 3D modeling, we
    investigate the effect of the higher-order modes on that enhancement.
    Finally, we suggest how to maximize the light trapping and optical
    absorption in the thin-film cell by optimizing the nanoparticle array
    parameters, which in turn can be used to fine tune the corresponding
    surface plasmon modes.},

  journal = {Optics express},
  keywords = {Absorption,Computer-Aided Design,Electric Power Supplies,Equipment
    Design,Equipment Failure Analysis,Light,Membranes, Artificial,Nanoparticles,Nanoparticles:
    chemistry,Nanoparticles: ultrastructure,Particle Size,Scattering,
    Radiation,Solar Energy,Surface Plasmon Resonance,Surface Plasmon
    Resonance: instrumentation},
  pmid = {19506674}
}

@ARTICLE{Alamo1981,
  author = {del Alamo, J. and Eguren, J. and Luque, A.},
  title = {{Operating limits of Al-alloyed high-low junctions for BSF solar
    cells}},
  year = {1981},
  volume = {24},
  number = {5},
  pages = {5},


  journal = {Solid-St. Electron.}
}

@ARTICLE{Alamo1981a,
  author = {del Alamo, J. and Eguren, J. and Luque, A.},
  title = {{Operating limits of Al-alloyed high-low junctions for BSF solar
    cells}},
  year = {1981},
  volume = {24},
  number = {5},
  pages = {5},


  journal = {Solid-St. Electron.}
}

@ARTICLE{ALBERTS1992a,
  author = {ALBERTS, V and NEETHLING, J and VERMAAK, J},
  title = {{Structural characterization of gallium arsenide epitaxial layers
    grown on Si(001)}},
  year = {1992},
  volume = {13},
  number = {2-3},
  month = mar,
  pages = {65--79},
  issn = {0167577X},
  doi = {10.1016/0167-577X(92)90111-V},


  journal = {Materials Letters}
}

@ARTICLE{ALBERTS1992,
  author = {Alberts, V. and Neethling, J. H. and Vermaak, J.},
  title = {{Structural characterization of gallium arsenide epitaxial layers
    grown on Si(001)}},
  year = {1992},
  volume = {13},
  number = {2-3},
  month = mar,
  pages = {65--79},
  issn = {0167577X},
  doi = {10.1016/0167-577X(92)90111-V},


  journal = {Materials Letters}
}

@INPROCEEDINGS{Aleman2008,
  author = {Alem\'{a}n, M.},
  title = {{INDUSTRIALLY FEASIBLE FRONT-SIDE METALLIZATION BASED ON INK-JET
    MASKING AND NICKEL PLATING}},
  booktitle = {23rd EUPVSEC, Valencia, Spain},
  year = {2008},
  number = {September},
  pages = {3--6},

  keywords = {etching,metallization,silicon-nitride}
}

@ARTICLE{Alerhand1990,
  author = {Alerhand, OL and Berker, A.N. and Joannopoulos, JD and Vanderbilt,
    David and Hamers, RJ and Demuth, JE},
  title = {{Finite-temperature phase diagram of vicinal Si(100) surfaces}},
  year = {1990},
  volume = {64},
  number = {20},
  month = may,
  pages = {2406--2409},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.64.2406},

  journal = {Physical Review Letters},
  publisher = {APS}
}

@ARTICLE{Alerhand1990a,
  author = {Alerhand, OL and Berker, A.N. and Joannopoulos, JD and Vanderbilt,
    D. and Hamers, RJ and Demuth, JE},
  title = {{Finite-temperature phase diagram of vicinal Si (100) surfaces}},
  year = {1990},
  volume = {64},
  number = {20},
  pages = {2406--2409},
  issn = {1079-7114},
  doi = {10.1103/PhysRevLett.64.2406},

  journal = {Physical review letters},
  publisher = {APS}
}

@ARTICLE{Ali2007,
  author = {Ali, M Yusuf},
  title = {{Passivation of a Si(100) Surface by S from Solution}},
  year = {2007},
  volume = {10},
  number = {11},
  pages = {H317},
  doi = {10.1149/1.2771079},
  annote = {id: 1; issn: print 10990062; publication\_type: full\_text},
  isbn = {10990062},
  journal = {Electrochemical and Solid-State Letters}
}

@ARTICLE{Alzanki2004,
  author = {Alzanki, T. and Gwilliam, R. and Emerson, N. and Sealy, B. J.},
  title = {{Differential Hall effect profiling of ultrashallow junctions in
    Sb implanted silicon}},
  year = {2004},
  volume = {85},
  number = {11},
  pages = {1979},
  issn = {00036951},
  doi = {10.1063/1.1792378},


  journal = {Applied Physics Letters}
}

@ARTICLE{Amirtharaj1984,
  author = {Amirtharaj, P. M. and Pollak, Fred H.},
  title = {{Raman scattering study of the properties and removal of excess Te
    on CdTe surfaces}},
  year = {1984},
  volume = {45},
  number = {7},
  pages = {789},
  issn = {00036951},
  doi = {10.1063/1.95367},


  journal = {Applied Physics Letters}
}

@INPROCEEDINGS{Amstel2009,
  author = {Amste, T. Van and Popovich, V.A. and Bennett, I. J.},
  title = {{A MULTISCALE MODEL OF THE {ALU}MINIUM LAYER AT THE REAR SIDE OF
    A SOLAR CELL}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {21--25},

  keywords = {bowing,finite element method,modelling,silicon solar cell}
}

@ARTICLE{Anderoglu2008,
  author = {Anderoglu, O. and Misra, a. and Wang, H. and Ronning, F. and Hundley,
    M. F. and Zhang, X.},
  title = {{Epitaxial nanotwinned Cu films with high strength and high conductivity}},
  year = {2008},
  volume = {93},
  number = {8},
  pages = {083108},
  issn = {00036951},
  doi = {10.1063/1.2969409},


  journal = {Applied Physics Letters}
}

@ARTICLE{Anderoglu2008a,
  author = {Anderoglu, O. and Misra, a. and Wang, H. and Ronning, F. and Hundley,
    M. F. and Zhang, X.},
  title = {{Epitaxial nanotwinned Cu films with high strength and high conductivity}},
  year = {2008},
  volume = {93},
  number = {8},
  pages = {083108},
  issn = {00036951},
  doi = {10.1063/1.2969409},


  journal = {Applied Physics Letters}
}

@ARTICLE{Andrew1997,
  author = {Andrew, P. and Kitson, S. C. and Barnes, W. L.},
  title = {{Surface-plasmon energy gaps and photoabsorption}},
  year = {1997},
  volume = {44},
  number = {2},
  month = feb,
  pages = {395--406},
  issn = {0950-0340},
  doi = {10.1080/09500349708241879},


  journal = {Journal of Modern Optics}
}

@ARTICLE{Angermann2008,
  author = {Angermann, H},
  title = {{Passivation of structured p-type silicon interfaces: Effect of surface
    morphology and wet-chemical pre-treatment}},
  year = {2008},
  volume = {254},
  number = {24},
  month = oct,
  pages = {8067--8074},
  issn = {01694332},
  doi = {10.1016/j.apsusc.2008.03.022},


  journal = {Applied Surface Science}
}

@ARTICLE{Anker2008,
  author = {Anker, Jeffrey N and Hall, W Paige and Lyandres, Olga and Shah, Nilam
    C and Zhao, Jing and {Van Duyne}, Richard P},
  title = {{Biosensing with plasmonic nanosensors.}},
  year = {2008},
  volume = {7},
  number = {6},
  month = jun,
  pages = {442--53},
  issn = {1476-1122},
  doi = {10.1038/nmat2162},

  abstract = {Recent developments have greatly improved the sensitivity of optical
    sensors based on metal nanoparticle arrays and single nanoparticles.
    We introduce the localized surface plasmon resonance (LSPR) sensor
    and describe how its exquisite sensitivity to size, shape and environment
    can be harnessed to detect molecular binding events and changes in
    molecular conformation. We then describe recent progress in three
    areas representing the most significant challenges: pushing sensitivity
    towards the single-molecule detection limit, combining LSPR with
    complementary molecular identification techniques such as surface-enhanced
    Raman spectroscopy, and practical development of sensors and instrumentation
    for routine use and high-throughput detection. This review highlights
    several exceptionally promising research directions and discusses
    how diverse applications of plasmonic nanoparticles can be integrated
    in the near future.},

  journal = {Nature materials},
  keywords = {Biosensing Techniques,Metal Nanoparticles,Sensitivity and Specificity,Surface
    Plasmon Resonance,Surface Plasmon Resonance: instrumentation},
  pmid = {18497851}
}

@ARTICLE{Anthony1982a,
  author = {Anthony, Thomas C and Fahrenbruch, Alan L and Bube, Richard H},
  title = {{Low resistance contacts to p-type cadmium telluride}},
  year = {1982},
  volume = {11},
  number = {1},
  month = jan,
  pages = {89--109},
  issn = {0361-5235},
  doi = {10.1007/BF02654611},
  annote = { From Duplicate 1 ( Low resistance contacts to p-type cadmium telluride
    - Anthony, Thomas C; Fahrenbruch, Alan L; Bube, Richard H )


     From Duplicate 2 ( Low resistance contacts to p-type cadmium telluride
    - Anthony, Thomas C; Fahrenbruch, Alan L; Bube, Richard H )






     },

  journal = {Journal of Electronic Materials},
  keywords = {contacts,p-cdte,tunneling}
}

@ARTICLE{Aoi2001,
  author = {Aoi, Ichiro and Ishino, Makoto and Yoshida, Makoto and Fukunaga,
    Hideharu and Nakae, H.},
  title = {{Influence of growth direction on the microstructure of unidirectionally
    solidified Cu-Pb monotectic alloy using zone-melt technique}},
  year = {2001},
  volume = {222},
  number = {4},
  pages = {806--815},


  journal = {Journal of crystal growth},
  keywords = {banded structure,copper,gravity,lead alloy,monotectic,unidirectional
    solidification},
  publisher = {Elsevier}
}

@ARTICLE{Arnone1986,
  author = {Arnone, C. and Rothschild, M. and Ehrlich, D. J.},
  title = {{Laser etching of 0.4 $\mu$m structures in CdTe by dynamic light
    guiding}},
  year = {1986},
  volume = {48},
  number = {11},
  pages = {736},
  issn = {00036951},
  doi = {10.1063/1.96705},


  journal = {Applied Physics Letters}
}

@ARTICLE{Arwin1984,
  author = {Arwin, H},
  title = {{Nondestructive analysis of Hg1-xCdxTe (x=0.00, 0.20, 0.29, and 1.00)
    by spectroscopic ellipsometry. II. Substrate, oxide, and interface
    properties}},
  year = {1984},
  volume = {2},
  number = {3},
  pages = {1316},
  issn = {07342101},
  doi = {10.1116/1.572401},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{Ashkin1992,
  author = {Ashkin, a},
  title = {{Forces of a single-beam gradient laser trap on a dielectric sphere
    in the ray optics regime.}},
  year = {1992},
  volume = {55},
  number = {February},
  month = jan,
  pages = {1--27},
  issn = {0091-679X},

  abstract = {We calculate the forces of single-beam gradient radiation pressure
    laser traps, also called "optical tweezers," on micron-sized dielectric
    spheres in the ray optics regime. This serves as a simple model system
    for describing laser trapping and manipulation of living cells and
    organelles within cells. The gradient and scattering forces are defined
    for beams of complex shape in the ray-optics limit. Forces are calculated
    over the entire cross-section of the sphere using TEM00 and TEM*00
    mode input intensity profiles and spheres of varying index of refraction.
    Strong uniform traps are possible with force variations less than
    a factor of 2 over the sphere cross-section. For a laser power of
    10 mW and a relative index of refraction of 1.2, we compute trapping
    forces as high as approximately 1.2 x 10(-6) dynes in the weakest
    (backward) direction of the gradient trap. It is shown that good
    trapping requires high convergence beams from a high numerical aperture
    objective. A comparison is given of traps made using bright field
    or differential interference contrast optics and phase contrast optics.},

  isbn = {0006349519210},
  journal = {Biophysic Journal},
  keywords = {Lasers,Micromanipulation,Micromanipulation: methods,Models,Optics
    and Photonics,Refractometry,Theoretical},
  pmid = {9352508}
}

@ARTICLE{Asthagiri2006,
  author = {Asthagiri, Aravind and Sholl, David S},
  title = {{Pt thin films on the polar LaAlO[sub 3](100) surface: A first-principles
    study}},
  year = {2006},
  volume = {73},
  number = {12},
  pages = {125432},

  journal = {Physical Review B},
  keywords = {ab initio calculations,adsorption,density functional theory,interface
    structure,lanthanum compounds,metallic thin films,platinum,surface
    energy},
  publisher = {APS}
}

@ARTICLE{Ayers1991,
  author = {Ayers, J. E. and Ghandhi, S. K. and Schowalter, L. J.},
  title = {{Crystallographic tilting of heteroepitaxial layers}},
  year = {1991},
  volume = {113},
  number = {3-4},
  month = sep,
  pages = {430--440},
  issn = {00220248},
  doi = {10.1016/0022-0248(91)90077-I},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Balakrishnan2006a,
  author = {Balakrishnan, G. and Huang, S. H. and Khoshakhlagh, A. and Jallipalli,
    A. and Rotella, P. and Amtout, A. and Krishna, S. and Haines, C.
    P. and Dawson, L. R. and Huffaker, D. L.},
  title = {{Room-temperature optically-pumped GaSb quantum well based VCSEL
    monolithically grown on Si ( 100 ) substrate}},
  year = {2006},
  volume = {42},
  number = {6},
  pages = {1--2},

  journal = {Electronics Letters}
}

@ARTICLE{Balakrishnan1997,
  author = {Balakrishnan, K. and Feuillet, G. and Ohta, K. and Hamaguchi, H.
    and Okumura, H. and Yoshida, S.},
  title = {{Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation}},
  year = {1997},
  volume = {36},
  number = {Part 1, No. 10},
  month = oct,
  pages = {6221--6225},
  issn = {00214922},
  doi = {10.1143/JJAP.36.6221},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Ballhorn1998,
  author = {Ballhorn, G},
  title = {{High-efficiency multicrystalline silicon solar cells by liquid phase-epitaxy}},
  year = {1998},
  volume = {52},
  number = {1-2},
  month = mar,
  pages = {61--68},
  issn = {09270248},


  journal = {Solar Energy Materials and Solar Cells}
}

@ARTICLE{Barnes2003,
  author = {Barnes, W.L. and Dereux, Alain and Ebbesen, T.W.},
  title = {{Surface plasmon subwavelength optics}},
  year = {2003},
  volume = {424},
  number = {6950},
  pages = {824--830},
  issn = {0028-0836},


  journal = {Nature},
  publisher = {Nature Publishing Group}
}

@ARTICLE{Baron1994a,
  author = {Baron, T and Tatarenko, S and Saminadayar, K and Magnea, N and Fontenille,
    J},
  title = {{Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and CdTe by molecular
    beam epitaxy}},
  year = {1994},
  volume = {65},
  number = {10},
  pages = {1284},
  issn = {00036951},
  doi = {10.1063/1.112096},

  annote = { From Duplicate 2 ( Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and
    CdTe by molecular beam epitaxy - Baron, T; Tatarenko, S; Saminadayar,
    K; Magnea, N; Fontenille, J )


     From Duplicate 2 ( Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and
    CdTe by molecular beam epitaxy - Baron, T; Tatarenko, S; Saminadayar,
    K; Magnea, N; Fontenille, J )






     },

  journal = {Applied Physics Letters},
  keywords = {CADMIUM TELLURIDES,CRYSTAL DOPING,HALL EFFECT,MOLECULAR BEAM EPITAXY,NITROGEN
    ADDITIONS,P-TYPE CONDUCTORS,PHOTOLUMINESCENCE,ZINC TELLURIDES}
}

@ARTICLE{Basore1993,
  author = {Basore, P. A.},
  title = {{Extended spectral analysis of internal quantum efficiency}},
  year = {1993},
  pages = {147--152},
  doi = {10.1109/PVSC.1993.347063},


  isbn = {0-7803-1220-1},
  journal = {Conference Record of the Twenty Third IEEE Photovoltaic Specialists
    Conference - 1993 (Cat. No.93CH3283-9)},
  publisher = {Ieee}
}

@ARTICLE{Baso1991,
  author = {Basore, P. A.},
  title = {{PC-{1D} Installation Manual and User ' s Guide Version 3 . 1}},
  year = {1991},
  number = {May},

  journal = {Contract}
}

@ARTICLE{Batyrev2000,
  author = {Batyrev, Iskander and Alavi, Ali and Finnis, Michael},
  title = {{Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial
    pressure}},
  year = {2000},
  volume = {62},
  number = {7},
  month = aug,
  pages = {4698--4706},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.62.4698},

  journal = {Physical Review B}
}

@ARTICLE{Baumann2006,
  author = {Baumann, S. and Kray, D. and Mayer, K. and Eyer, A. and Willeke,
    G. P.},
  title = {{Comparative Study of Laser Induced Damage in Silicon Wafers}},
  year = {2006},
  month = may,
  pages = {1142--1145},
  doi = {10.1109/WCPEC.2006.279363},


  isbn = {1-4244-0016-3},
  journal = {4th IEEE WCPVEC (unpublished)},
  publisher = {Ieee}
}

@ARTICLE{Beaucarne2010,
  author = {Beaucarne, Guy and Hoornstra, Jaap and Schubert, G.},
  title = {{Lessons From the 2nd Workshop on Metallization of Crystalline Silicon
    Solar Cells}},
  year = {2010},
  volume = {1},
  number = {May},

  journal = {future PV}
}

@ARTICLE{Benick2008,
  author = {Benick, J. and Hoex, Bram and van de Sanden, M. C. M. and Kessels,
    W. M. M. and Schultz, O. and Glunz, S. W.},
  title = {{High efficiency n-type Si solar cells on Al[sub 2]O[sub 3]-passivated
    boron emitters}},
  year = {2008},
  volume = {92},
  number = {25},
  pages = {253504},
  issn = {00036951},
  doi = {10.1063/1.2945287},


  journal = {Appl. Phys. Lett.}
}

@ARTICLE{Bennett2009a,
  author = {Bennett, I. J.},
  title = {{MWT cell and module development at ECN}},
  year = {2009},

  journal = {October}
}

@ARTICLE{BENNETT2005,
  author = {BENNETT, N and SMITH, A and COLOMBEAU, B and GWILLIAM, R and COWERN,
    N and SEALY, B},
  title = {{Differential Hall profiling of ultra-shallow junctions in Si and
    SOI}},
  year = {2005},
  volume = {124-125},
  month = dec,
  pages = {305--309},
  issn = {09215107},
  doi = {10.1016/j.mseb.2005.08.020},


  journal = {Materials Science and Engineering: B},
  keywords = {differential hall measurement,soi,ultra-shallow junctions}
}

@ARTICLE{Bennett1995,
  author = {Bennett, Ted D. and Grigoropoulos, Costas P. and Krajnovich, Douglas
    J.},
  title = {{Near-threshold laser sputtering of gold}},
  year = {1995},
  volume = {77},
  number = {2},
  pages = {849},
  issn = {00218979},
  doi = {10.1063/1.359010},


  journal = {Journal of Applied Physics},
  keywords = {ABLATION,GOLD,HEAT TRANSFER,LASER-RADIATION HEATING,MELTING,PULSES,RAYLEIGH-TAYLOR
    INSTABILITY,SEM,SPUTTERING,SURFACE STRUCTURE,TOPOGRAPHY}
}

@ARTICLE{Benson2008,
  author = {Benson, J. D. and Jacobs, R. N. and Markunas, J. K. and Jaime-Vasquez,
    M. and Smith, P. J. and Almeida, L. A. and Martinka, M. and Vilela,
    M. F. and Lee, U.},
  title = {{Structural Analysis of CdTe Hetero-epitaxy on (211) Si}},
  year = {2008},
  volume = {37},
  number = {9},
  month = may,
  pages = {1231--1236},
  issn = {0361-5235},
  doi = {10.1007/s11664-008-0469-5},

  journal = {Journal of Electronic Materials},
  keywords = {atomic force,cdte,etch pit density,half-maximum,hgcdte,microscopy,molecular-beam
    epitaxy,reflection high-energy electron diffraction,si,x-ray diffraction
    full-width at}
}

@PHDTHESIS{Bentzen2006a,
  author = {Bentzen, Andreas},
  title = {{PHOSPHORUS DIFFUSION AND GETTERING IN SILICON SOLAR CELLS}},
  year = {2006},

  school = {UNIVERSITY OF OSLO}
}

@ARTICLE{Berding1999,
  author = {Berding, M.},
  title = {{Native defects in CdTe}},
  year = {1999},
  volume = {60},
  number = {12},
  month = sep,
  pages = {8943--8950},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.60.8943},

  journal = {Physical Review B}
}

@BOOK{Bessis1974,
  author = {Bessis, Marcel},
  title = {{Corpuscles: Atlas of red blood cell shapes}},
  year = {1974},
  publisher = {Springer-Verlag},
  pages = {121},
  address = {Berlin and New York}
}

@ARTICLE{Beszeda2005,
  author = {Beszeda, I and Gontier-Moya, E G and Imre, \'{A} W},
  title = {{Surface Ostwald-ripening and evaporation of gold beaded films on
    sapphire}},
  year = {2005},
  volume = {81},
  number = {4},
  pages = {673--677},
  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Biegelsen1992,
  author = {Biegelsen, D. K. and Bringans, R. D. and Northrup, J. E.},
  title = {{Heteroepitaxial growth of polar semiconductors on non-polar substrates}},
  year = {1992},
  volume = {14},
  number = {3},
  month = aug,
  pages = {317--331},
  issn = {09215107},
  doi = {10.1016/0921-5107(92)90315-Z},


  journal = {Materials Science and Engineering: B}
}

@ARTICLE{Biegelsen1992a,
  author = {Biegelsen, D. K. and Bringans, R. D. and Northrup, J. E.},
  title = {{Heteroepitaxial growth of polar semiconductors on non-polar substrates}},
  year = {1992},
  volume = {14},
  number = {3},
  month = aug,
  pages = {317--331},
  issn = {09215107},
  doi = {10.1016/0921-5107(92)90315-Z},


  journal = {Materials Science and Engineering: B}
}

@ARTICLE{Bierwagen2004,
  author = {Bierwagen, O. and Pomraenke, R. and Eilers, S. and Masselink, W.},
  title = {{Mobility and carrier density in materials with anisotropic conductivity
    revealed by van der Pauw measurements}},
  year = {2004},
  volume = {70},
  number = {16},
  month = oct,
  pages = {1--6},
  issn = {1098-0121},
  doi = {10.1103/PhysRevB.70.165307},

  journal = {Physical Review B}
}

@ARTICLE{Billot2006,
  author = {Billot, L and {Lamy de la Chapelle}, M and Grimault, A S and Vial,
    A and Barchiesi, D and Bijeon, J L and Adam, P M and Royer, P},
  title = {{Surface enhanced Raman scattering on gold nanowire arrays: Evidence
    of strong multipolar surface plasmon resonance enhancement}},
  year = {2006},
  volume = {422},
  number = {4-6},
  month = oct,
  pages = {303--307},

  isbn = {0009-2614},
  journal = {Chemical Physics Letters}
}

@ARTICLE{Birkholz1992,
  author = {Birkholz, M and Lichtenberger, D and Hopfner, C and Fiechter, S},
  title = {{Sputtering of thin pyrite films}},
  year = {1992},
  volume = {27},
  number = {3},
  month = aug,
  pages = {243--251},
  issn = {09270248},
  doi = {10.1016/0927-0248(92)90086-5},

  annote = { From Duplicate 1 ( Sputtering of thin pyrite films - Birkholz, M;
    Lichtenberger, D; Hopfner, C; Fiechter, S )


     From Duplicate 1 ( Sputtering of thin pyrite films - Birkholz, M;
    Lichtenberger, D; Hopfner, C; Fiechter, S )






     },

  journal = {Solar Energy Materials and Solar Cells}
}

@PHDTHESIS{Wissenschaften2003,
  author = {Biro, D.},
  title = {{Durchlaufdiffusion f\"{u}r die photovoltaik}},
  year = {2003},

  school = {Universit\"{a}t Freiburg}
}

@PHDTHESIS{Blauwendraat2006,
  author = {Blauwendraat, T.},
  title = {{Passivation of Boron emitters in Crystalline Silicon Solar Cells}},
  year = {2006},

}

@ARTICLE{Bliokh2008,
  author = {Bliokh, Konstantin and Bliokh, Yury and Freilikher, Valentin and
    Savel’ev, Sergey and Nori, Franco},
  title = {{Colloquium: Unusual resonators: Plasmonics, metamaterials, and random
    media}},
  year = {2008},
  volume = {80},
  number = {4},
  month = oct,
  pages = {1201--1213},
  issn = {0034-6861},
  doi = {10.1103/RevModPhys.80.1201},

  journal = {Reviews of Modern Physics}
}

@ARTICLE{Bommena2008,
  author = {Bommena, R. and Seldrum, T. and Samain, L. and Sporken, R. and Sivananthan,
    S. and Brueck, S.R.J.},
  title = {{Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned
    Silicon on Insulator ({SOI}) Substrates}},
  year = {2008},
  volume = {37},
  number = {9},
  month = apr,
  pages = {1255--1260},
  issn = {0361-5235},
  doi = {10.1007/s11664-008-0456-x},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,defects,heteroepitaxy,mbe,nano,patterned,strain}
}

@ARTICLE{Bond1999,
  author = {Bond, Geoffrey C and Thompson, David T},
  title = {{Catalysis by Gold}},
  year = {1999},
  volume = {41},
  number = {3},
  pages = {319},
  doi = {10.1081/CR-100101171},
  isbn = {0161-4940},
  journal = {Catalysis Reviews: Science and Engineering},
  publisher = {Taylor \& Francis}
}

@ARTICLE{Borsenberger1968,
  author = {Borsenberger, P.M. and Stevenson, D.a.},
  title = {{Self-diffusion of cadmium and tellurium in cadmium telluride}},
  year = {1968},
  volume = {29},
  number = {8},
  month = aug,
  pages = {1277--1286},
  issn = {00223697},
  doi = {10.1016/0022-3697(68)90179-0},


  journal = {Journal of Physics and Chemistry of Solids}
}

@ARTICLE{Bouhtiyya2008,
  author = {Bouhtiyya, S and Roue, L},
  title = {{On the characteristics of Pd thin films prepared by pulsed laser
    deposition under different helium pressures}},
  year = {2008},
  volume = {33},
  number = {12},
  month = jun,
  pages = {2912--2920},
  issn = {03603199},
  doi = {10.1016/j.ijhydene.2008.04.013},


  journal = {International Journal of Hydrogen Energy}
}

@ARTICLE{Bouhtiyya2008a,
  author = {Bouhtiyya, S and Roue, L},
  title = {{On the characteristics of Pd thin films prepared by pulsed laser
    deposition under different helium pressures}},
  year = {2008},
  volume = {33},
  number = {12},
  month = jun,
  pages = {2912--2920},
  issn = {03603199},
  doi = {10.1016/j.ijhydene.2008.04.013},


  journal = {International Journal of Hydrogen Energy}
}

@ARTICLE{Brakke1992,
  author = {Brakke, Kenneth A},
  title = {{The Surface Evolver}},
  year = {1992},
  volume = {1},
  number = {2},
  journal = {Experimental Mathematics}
}

@ARTICLE{Bratina1993,
  author = {Bratina, G and Sorba, L and Antonini, A and Ceccone, G and Nicolini,
    R. and Biasiol, G. and Franciosi, A. and Angelo, J. and Gerberich,
    W.},
  title = {{Band offsets and strain in CdTe-{GaAs} heterostructures}},
  year = {1993},
  volume = {48},
  number = {12},
  month = sep,
  pages = {8899--8910},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.48.8899},


  journal = {Physical Review B}
}

@ARTICLE{Bratina1993a,
  author = {Bratina, G. and Sorba, L. and Antonini, A. and Ceccone, G. and Nicolini,
    R. and Biasiol, G. and Franciosi, A. and Angelo, J. and Gerberich,
    W.},
  title = {{Band offsets and strain in CdTe-{GaAs} heterostructures}},
  year = {1993},
  volume = {48},
  number = {12},
  month = sep,
  pages = {8899--8910},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.48.8899},

  journal = {Physical Review B}
}

@ARTICLE{BREBRICK1964,
  author = {BREBRICK, R and STRAUSS, A},
  title = {{Partial pressures and Gibbs free energy of formation for congruently
    subliming CdTe(c)}},
  year = {1964},
  volume = {25},
  number = {12},
  month = dec,
  pages = {1441--1445},
  issn = {00223697},
  doi = {10.1016/0022-3697(64)90059-9},


  journal = {Journal of Physics and Chemistry of Solids}
}

@ARTICLE{BREBRICK1964a,
  author = {BREBRICK, R and STRAUSS, A},
  title = {{Partial pressures and Gibbs free energy of formation for congruently
    subliming CdTe(c)}},
  year = {1964},
  volume = {25},
  number = {12},
  month = dec,
  pages = {1441--1445},
  issn = {00223697},
  doi = {10.1016/0022-3697(64)90059-9},


  journal = {Journal of Physics and Chemistry of Solids}
}

@ARTICLE{Brill2003,
  author = {Brill, G. and Chen, Y. P. and Dhar, N. K. and Singh, R.},
  title = {{Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces}},
  year = {2003},
  volume = {32},
  number = {7},
  month = jul,
  pages = {717--722},
  issn = {0361-5235},
  doi = {10.1007/s11664-003-0058-6},

  journal = {Journal of Electronic Materials},
  keywords = {adsorption,cdte,mbe,molecular-beam epitaxy,molecular-beam epitaxy
    (MBE),nucleation,si,x-ray photoelectron spectroscopy,x-ray photoelectron
    spectroscopy (XPS),xps}
}

@ARTICLE{Brill2003a,
  author = {Brill, G. and Chen, Y. P. and Dhar, N. K. and Singh, R.},
  title = {{Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces}},
  year = {2003},
  volume = {32},
  number = {7},
  month = jul,
  pages = {717--722},
  issn = {0361-5235},
  doi = {10.1007/s11664-003-0058-6},

  journal = {Journal of Electronic Materials},
  keywords = {adsorption,cdte,mbe,molecular-beam epitaxy,molecular-beam epitaxy
    (MBE),nucleation,si,x-ray photoelectron spectroscopy,x-ray photoelectron
    spectroscopy (XPS),xps}
}

@ARTICLE{Brill2003b,
  author = {Brill, G. and Chen, Y. P. and Dhar, N. K. and Singh, R.},
  title = {{Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces}},
  year = {2003},
  volume = {32},
  number = {7},
  month = jul,
  pages = {717--722},
  issn = {0361-5235},
  doi = {10.1007/s11664-003-0058-6},

  journal = {Journal of Electronic Materials},
  keywords = {adsorption,cdte,mbe,molecular-beam epitaxy,molecular-beam epitaxy
    (MBE),nucleation,si,x-ray photoelectron spectroscopy,x-ray photoelectron
    spectroscopy (XPS),xps}
}

@ARTICLE{Bringans1991,
  author = {Bringans, R. D. and Biegelsen, D. K. and Swartz, L. E.},
  title = {{Atomic-step rearrangement on Si(001) by interactionwith arsenic
    and the implication for {GaAs}-on-Si epitaxy}},
  year = {1991},
  volume = {44},
  number = {7},
  pages = {3054--3063},

  journal = {Physical Review B}
}

@ARTICLE{Bringans1988,
  author = {Bringans, R. D. and Olmstead, M. A. and Ponce, F. A. and Biegelsen,
    D. K. and Krusor, B. S. and Yingling, R. D.},
  title = {{The effect of a Ga prelayer on the beginning of {GaAs} epitaxy on
    Si}},
  year = {1988},
  volume = {64},
  number = {7},
  pages = {3472--3475},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Britten2007,
  author = {Britten, J. and Guan, Weiguang},
  title = {{MAX3D - Visualization of Reciprocal Space Volumes}},
  year = {2007},
  volume = {8},
  number = {8},
  pages = {96},

  journal = {Commission on Crystallographic Computing Newsletter}
}

@ARTICLE{Britten2007a,
  author = {Britten, J. F. and Guan, Weiguang},
  title = {{MAX3D - Visualization of Reciprocal Space Volumes}},
  year = {2007},
  volume = {8},
  number = {8},
  pages = {96},

  journal = {Commission on Crystallographic Computing Newsletter}
}

@ARTICLE{Broglie1987,
  author = {Broglie, De},
  title = {{On the Theory of Quanta (sur la Th\'{e}orie des Quanta)}},
  year = {1925},
  volume = {10},
  number = {III},


  journal = {Ann. de Phys.}
}

@ARTICLE{Bronold1997,
  author = {Bronold, M and Kubala, S and Pettenkofer, C and Jaegermann, W},
  title = {{Thin pyrite (FeS2) films by molecular beam deposition}},
  year = {1997},
  volume = {304},
  number = {1-2},
  pages = {178--182},

  isbn = {0040-6090},
  journal = {Thin Solid Films},
  keywords = {Molecular beam deposition,Polycrystalline}
}

@ARTICLE{Brown1990,
  author = {Brown, P.D. and Durose, K and Russell, G.J. and Woods, J.},
  title = {{The absolute determination of CdTe crystal polarity}},
  year = {1990},
  volume = {101},
  number = {1-4},
  month = apr,
  pages = {211--215},
  issn = {00220248},
  doi = {10.1016/0022-0248(90)90968-Q},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Buffat1976,
  author = {Buffat, P and Borel, J P},
  title = {{Size effect on the melting temperature of gold particles}},
  year = {1976},
  volume = {13},
  number = {6},
  pages = {2287--2298},
  journal = {Physical Review A (General Physics)}
}

@ARTICLE{Burchard1996,
  author = {Burchard, A},
  title = {{Defect recovery of ion-implanted CdTe}},
  year = {1996},
  volume = {161},
  number = {1-4},
  month = apr,
  pages = {128--133},
  issn = {00220248},
  doi = {10.1016/0022-0248(95)00621-4},

  annote = { From Duplicate 1 ( Defect recovery of ion-implanted CdTe - Burchard,
    A )


     From Duplicate 1 ( Defect recovery of ion-implanted CdTe - Burchard,
    A )






     },

  journal = {Journal of Crystal Growth}
}

@ARTICLE{Burstein1994,
  author = {Burstein, L. and Shapira, Yoram and Moons, E. and Cahen, David},
  title = {{Determination of undoped CdTe(111) surface polarity by surface photovoltage
    spectroscopy}},
  year = {1994},
  volume = {74},
  number = {2},
  month = feb,
  pages = {201--206},
  issn = {01694332},
  doi = {10.1016/0169-4332(94)90303-4},


  journal = {Applied Surface Science}
}

@ARTICLE{Card1977,
  author = {Card, H. C. and Yang, E. S. and Panayotatos, P.},
  title = {{Peaked Schottky-barrier solar cells by Al-Si metallurgical reactions}},
  year = {1977},
  volume = {30},
  number = {12},
  pages = {643},
  issn = {00036951},
  doi = {10.1063/1.89269},


  journal = {Applied Physics Letters}
}

@TECHREPORT{Carmody2011,
  author = {Carmody, M and Technologies, A Gilmore Epir},
  title = {{High Efficiency Single Crystal CdTe Solar Cells High Efficiency
    Single Crystal CdTe Solar Cells}},
  institution = {National Renewable energy Laboratory},
  year = {2011},
  number = {May},
  pages = {47},
  abstract = {The goal of the program was to develop single crystal CdTe-based top
    cells grown on Si solar cells as a platform for the subsequent manufacture
    of high efficiency tandem cells for CPV applications. The keys to
    both the single junction and the tandem junction cell architectures
    are the ability to grow high quality single-crystal CdTe and CdZnTe
    layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably,
    both n and p-type, and to make low resistance ohmic front and back
    contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si
    and CdZnTe/Si having high crystalline quality despite very large
    lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently
    showed state-of-the-art electron mobilities and good hole mobilities;
    bulk minority carrier recombination lifetimes of unintentionally
    p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be
    consistently of order 100 ns or longer; desired n- and p-doping levels
    were achieved; solar cell series specific resistances <10 $\Omega$-cm2
    were achieved; A single-junction solar cell having a state-of-the-art
    value of Voc and a unverified 16.4\% efficiency was fabricated from
    CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a
    tandem cell with a Si bottom junction.},
  booktitle = {Energy},

  keywords = {CdTe,Epitaxial,May 2011,NREL/SR-5200-51380,Photovoltaic}
}

@ARTICLE{Catchpole2008,
  author = {Catchpole, K R and Polman, a},
  title = {{Plasmonic solar cells.}},
  year = {2008},
  volume = {16},
  number = {26},
  month = dec,
  pages = {21793--800},
  issn = {1094-4087},

  abstract = {The scattering from metal nanoparticles near their localized plasmon
    resonance is a promising way of increasing the light absorption in
    thin-film solar cells. Enhancements in photocurrent have been observed
    for a wide range of semiconductors and solar cell configurations.
    We review experimental and theoretical progress that has been made
    in recent years, describe the basic mechanisms at work, and provide
    an outlook on future prospects in this area.},

  journal = {Optics express},
  pmid = {19104612}
}

@ARTICLE{Catchpole2008a,
  author = {Catchpole, K. R. and Polman, a.},
  title = {{Design principles for particle plasmon enhanced solar cells}},
  year = {2008},
  volume = {93},
  number = {19},
  pages = {191113},
  issn = {00036951},
  doi = {10.1063/1.3021072},


  journal = {Applied Physics Letters}
}

@ARTICLE{Cayron2009,
  author = {Cayron, Cyril and {Den Hertog}, Martien and Latu-Romain, Laurence
    and Mouchet, C\'{e}line and Secouard, Christopher and Rouviere, Jean-Luc
    and Rouviere, Emmanuelle and Simonato, Jean-Pierre},
  title = {{Odd electron diffraction patterns in silicon nanowires and silicon
    thin films explained by microtwins and nanotwins}},
  year = {2009},
  volume = {42},
  number = {2},
  month = jan,
  pages = {242--252},
  issn = {0021-8898},
  doi = {10.1107/S0021889808042131},

  abstract = {Odd electron diffraction patterns (EDPs) have been obtained by transmission
    electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid-solid
    method and on silicon thin films deposited by electron beam evaporation.
    Many explanations have been given in the past, without consensus
    among the scientific community: size artifacts, twinning artifacts
    or, more widely accepted, the existence of new hexagonal Si phases.
    In order to resolve this issue, the microstructures of Si nanowires
    and Si thin films have been characterized by TEM, high-resolution
    transmission electron microscopy (HRTEM) and high-resolution scanning
    transmission electron microscopy. Despite the differences in the
    geometries and elaboration processes, the EDPs of the materials show
    great similarities. The different hypotheses reported in the literature
    have been investigated. It was found that the positions of the diffraction
    spots in the EDPs could be reproduced by simulating a hexagonal structure
    with c/a = 12(2/3)1/2, but the intensities in many EDPs remained
    unexplained. Finally, it was established that all the experimental
    data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon
    structure containing two microstructural defects: (i) overlapping
    [Sigma]3 microtwins which induce extra spots by double diffraction,
    and (ii) nanotwins which induce extra spots as a result of streaking
    effects. It is concluded that there is no hexagonal phase in the
    Si nanowires and the Si thin films presented in this work.},

  journal = {Journal of Applied Crystallography},
  publisher = {International Union of Crystallography}
}

@ARTICLE{Cayron2009a,
  author = {Cayron, Cyril and {Den Hertog}, Martien and Latu-Romain, Laurence
    and Mouchet, C\'{e}line and Secouard, Christopher and Rouviere, Jean-Luc
    and Rouviere, Emmanuelle and Simonato, Jean-Pierre},
  title = {{Odd electron diffraction patterns in silicon nanowires and silicon
    thin films explained by microtwins and nanotwins}},
  year = {2009},
  volume = {42},
  number = {2},
  month = jan,
  pages = {242--252},
  issn = {0021-8898},
  doi = {10.1107/S0021889808042131},

  abstract = {Odd electron diffraction patterns (EDPs) have been obtained by transmission
    electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid-solid
    method and on silicon thin films deposited by electron beam evaporation.
    Many explanations have been given in the past, without consensus
    among the scientific community: size artifacts, twinning artifacts
    or, more widely accepted, the existence of new hexagonal Si phases.
    In order to resolve this issue, the microstructures of Si nanowires
    and Si thin films have been characterized by TEM, high-resolution
    transmission electron microscopy (HRTEM) and high-resolution scanning
    transmission electron microscopy. Despite the differences in the
    geometries and elaboration processes, the EDPs of the materials show
    great similarities. The different hypotheses reported in the literature
    have been investigated. It was found that the positions of the diffraction
    spots in the EDPs could be reproduced by simulating a hexagonal structure
    with c/a = 12(2/3)1/2, but the intensities in many EDPs remained
    unexplained. Finally, it was established that all the experimental
    data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon
    structure containing two microstructural defects: (i) overlapping
    [Sigma]3 microtwins which induce extra spots by double diffraction,
    and (ii) nanotwins which induce extra spots as a result of streaking
    effects. It is concluded that there is no hexagonal phase in the
    Si nanowires and the Si thin films presented in this work.},

  journal = {Journal of Applied Crystallography},
  publisher = {International Union of Crystallography}
}

@ARTICLE{Chadi1987,
  author = {Chadi, D. J.},
  title = {{Stabilities of Single-Layer and Bilayer Steps on Si(001) Surfaces}},
  year = {1987},
  volume = {59},
  number = {15},
  pages = {1691--1694},
  annote = {Original source of why dB is more energetically favourable over both
    sA and sB when Si(001) is reconstructed. Also explains why sA is
    more favourable as a general case (without reconstruction taking
    place).},

  journal = {Physical Review Letters}
}

@ARTICLE{Chaloupka1999,
  author = {Chaloupka, J. and Meyerhofer, D.},
  title = {{Observation of Electron Trapping in an Intense Laser Beam}},
  year = {1999},
  volume = {83},
  number = {22},
  month = nov,
  pages = {4538--4541},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.83.4538},

  journal = {Physical Review Letters}
}

@ARTICLE{Chan1994,
  author = {Chan, Siu-Wai},
  title = {{Degenerate epitaxy, coincidence epitaxy and origin of “special”
    boundaries in thin films}},
  year = {1994},
  volume = {55},
  number = {10},
  month = oct,
  pages = {1137--1145},
  issn = {00223697},
  doi = {10.1016/0022-3697(94)90131-7},


  journal = {Journal of Physics and Chemistry of Solids},
  keywords = {a,b,d,epitaxial growth,interfaces,microstructure,superconductors,thin
    films}
}

@ARTICLE{Chatterjee2007,
  author = {Chatterjee, a and Vlachos, D},
  title = {{Systems tasks in nanotechnology via hierarchical multiscale modeling:
    Nanopattern formation in heteroepitaxy}},
  year = {2007},
  volume = {62},
  number = {18-20},
  month = sep,
  pages = {4852--4863},
  issn = {00092509},
  doi = {10.1016/j.ces.2006.12.049},


  journal = {Chemical Engineering Science},
  keywords = {coarse-graining,diffusion,entropy,kinetic phase diagram,mesoscopic
    modeling,model reduction,monte carlo,multiscale simulation,nanopatterns,systems
    task analysis}
}

@ARTICLE{Chichkov1996,
  author = {Chichkov, BN and Momma, C and Nolte, S and {Von Alvensleben}, F.
    and T$\backslash$$\backslash$"unnermann, A.},
  title = {{Femtosecond, picosecond and nanosecond laser ablation of solids}},
  year = {1996},
  volume = {63},
  number = {2},
  pages = {109--115},
  issn = {0947-8396},


  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Cho1983,
  author = {CHO, A},
  title = {{Growth of III-V semiconductors by molecular beam epitaxy and their
    properties}},
  year = {1983},
  volume = {100},
  number = {4},
  month = feb,
  pages = {291--317},
  issn = {00406090},
  doi = {10.1016/0040-6090(83)90154-2},


  journal = {Thin Solid Films}
}

@ARTICLE{Cho1983a,
  author = {Cho, A. Y.},
  title = {{Growth of III-V semiconductors by molecular beam epitaxy and their
    properties}},
  year = {1983},
  volume = {100},
  number = {4},
  month = feb,
  pages = {291--317},
  issn = {00406090},
  doi = {10.1016/0040-6090(83)90154-2},


  journal = {Thin Solid Films}
}

@ARTICLE{Cho1991,
  author = {Cho, K. I. and Choo, W. K. and Lee, J. Y. and Park, S. C. and Nishinaga,
    T.},
  title = {{Defect formation in the solid phase epitaxial growth of {GaAs} films
    on Si (001) substrate}},
  year = {1991},
  volume = {69},
  number = {1},
  pages = {237--242},
  issn = {00218979},
  doi = {10.1063/1.347756},


  journal = {Journal of Applied Physics},
  keywords = {FILMS,GALLIUM ARSENIDES,HIGH-RESOLUTION METHODS,MISFIT DISLOCATIONS,MOLECULAR
    BEAM EPITAXY,SILICON,SOLID-PHASE EPITAXY,STACKING FAULTS,TRANSMISSION
    ELECTRON MICROSCOPY}
}

@ARTICLE{Cho1988,
  author = {Cho, N.-H. and McKernan, S. and Wagner, D. K. and Carter, C. B.},
  title = {{Grain Boundaries and Antiphase Boundaries in GaAs}},
  year = {1988},
  volume = {49},
  number = {C5},
  pages = {245--250},

  journal = {Journal de Physique Colloque}
}

@ARTICLE{Cho1998,
  author = {Cho, Sunglae and DiVenere, Antonio and Wong, George and Ketterson,
    John and Meyer, Jerry and Hong, Jung-Il},
  title = {{Growth-mode modification of Bi on CdTe(111)A using Te monolayer
    deposition}},
  year = {1998},
  volume = {58},
  number = {4},
  month = jul,
  pages = {2324--2328},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.58.2324},

  journal = {Physical Review B}
}

@ARTICLE{Cho1998a,
  author = {Cho, Sunglae and DiVenere, Antonio and Wong, George and Ketterson,
    John and Meyer, Jerry and Hong, Jung-Il},
  title = {{Growth-mode modification of Bi on CdTe(111)A using Te monolayer
    deposition}},
  year = {1998},
  volume = {58},
  number = {4},
  month = jul,
  pages = {2324--2328},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.58.2324},
  annote = {This paper defines (111)A and (111)B surfaces.},

  journal = {Physical Review B}
}

@ARTICLE{Choi2004,
  author = {Choi, D. Y.},
  title = {{Formation of plasma induced surface damage in silica glass etching
    for optical waveguides}},
  year = {2004},
  volume = {95},
  number = {12},
  pages = {8400},
  issn = {00218979},
  doi = {10.1063/1.1739525},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Choi1988a,
  author = {Choi, S. S.},
  title = {{Native oxide formation on CdTe}},
  year = {1988},
  volume = {6},
  number = {4},
  month = jul,
  pages = {1198},
  issn = {0734211X},
  doi = {10.1116/1.584278},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Choi1988b,
  author = {Choi, S. S.},
  title = {{Native oxide formation on CdTe}},
  year = {1988},
  volume = {6},
  number = {4},
  month = jul,
  pages = {1198},
  issn = {0734211X},
  doi = {10.1116/1.584278},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Christou1987,
  author = {Christou, A and Varmazis, K. and Hatzopoulos, Z.},
  title = {{High mobility {GaAs}/AlAs/(211)Si structures grown by MBE}},
  year = {1987},
  volume = {81},
  number = {1-4},
  month = feb,
  pages = {226--230},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90396-4},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Chu1988,
  author = {Chu, S. N. G.},
  title = {{Antiphase domains in {GaAs} grown by metalorganic chemical vapor
    deposition on silicon-on-insulator}},
  year = {1988},
  volume = {4},
  number = {6},
  pages = {403},
  doi = {10.1063/1.341561},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Chu1988a,
  author = {Chu, S. N. G.},
  title = {{Antiphase domains in {GaAs} grown by metalorganic chemical vapor
    deposition on silicon-on-insulator}},
  year = {1988},
  volume = {4},
  number = {6},
  pages = {403},
  doi = {10.1063/1.341561},

  journal = {Journal of Applied Physics}
}

@ARTICLE{CHUN1995,
  author = {CHUN, Y},
  title = {{Effect of atomic hydrogen in highly lattice-mismatched molecular
    beam epitaxy}},
  year = {1995},
  volume = {150},
  month = may,
  pages = {497--502},
  issn = {00220248},
  doi = {10.1016/0022-0248(95)80261-A},


  journal = {Journal of Crystal Growth},
  publisher = {Elsevier}
}

@ARTICLE{Chun1993,
  author = {Chun, Y.J. and Sugaya, T. and Okada, Y. and Kawabe, M.},
  title = {{Low temperature surface cleaning of {InP} by irradiation of atomic
    hydrogen}},
  year = {1993},
  volume = {32},
  pages = {L287--L289},


  journal = {Jpn. J. Appi. Phys. Vol}
}

@ARTICLE{Chun1993a,
  author = {Chun, Y.J. and Sugaya, T. and Okada, Y. and Kawabe, M.},
  title = {{Low temperature surface cleaning of {InP} by irradiation of atomic
    hydrogen}},
  year = {1993},
  volume = {32},
  pages = {L287--L289},


  journal = {Jpn. J. Appi. Phys. Vol}
}

@ARTICLE{Clement2009,
  author = {Clement, F. and Menkoe, Michael and Kubera, Tim and Harmel, Christian
    and Hoenig, R. and Wolke, W and Wirth, H and Biro, D. and Preu, R.},
  title = {{Industrially feasible multi-crystalline metal wrap through (MWT)
    silicon solar cells exceeding 16\% efficiency}},
  year = {2009},
  volume = {93},
  number = {6-7},
  pages = {1051--1055},
  issn = {09270248},
  doi = {10.1016/j.solmat.2008.11.059},


  journal = {Sol. Energy Mater. Sol. Cells}
}

@ARTICLE{Cohen1999,
  author = {Cohen, D and McKernan, S and Carter, Cb},
  title = {{Characterization of the Absolute Crystal Polarity across Twin Boundaries
    in Gallium Phosphide Using Convergent-Beam Electron Diffraction.}},
  year = {1999},
  volume = {5},
  number = {3},
  month = may,
  pages = {173--186},
  issn = {1435-8115},
  doi = {10.1017/S1431927699000124},

  abstract = {: The measurement of absolute crystal polarity is crucial to understanding
    the structural properties of many planar defects in compound semiconductors.
    Grain boundaries, including twin boundaries, in the sphalerite lattice
    are uniquely characterized by the crystallographic misorientation
    of individual grains and the direction of the crystal polarity in
    domains adjoining the grain boundary. To evaluate crystal polarity
    in gallium phosphide (GaP), asymmetrical interference contrast in
    convergent-beam electron-diffraction (CBED) patterns was used to
    ascertain the nature and direction of polar bonds. The direction
    of the asymmetry in the electron diffraction reflections was correlated
    with the crystal polarity of a sample with known polarity. The CBED
    technique was applied to determine the polar orientation of grains
    adjoining Sigma = 3 coherent and lateral twin boundaries in polycrystalline
    GaP.},

  journal = {Microscopy and microanalysis : the official journal of Microscopy
    Society of America, Microbeam Analysis Society, Microscopical Society
    of Canada},
  keywords = {compound semiconduc-,convergent-beam electron diffraction,crystal
    polarity,diffraction contrast,grain boundaries,interface structure,tors,twin
    boundaries},
  pmid = {10383990}
}

@ARTICLE{Cohen1999a,
  author = {Cohen, D and McKernan, S and Carter, Cb},
  title = {{Characterization of the Absolute Crystal Polarity across Twin Boundaries
    in Gallium Phosphide Using Convergent-Beam Electron Diffraction.}},
  year = {1999},
  volume = {5},
  number = {3},
  month = may,
  pages = {173--186},
  issn = {1435-8115},
  doi = {10.1017/S1431927699000124},

  abstract = {: The measurement of absolute crystal polarity is crucial to understanding
    the structural properties of many planar defects in compound semiconductors.
    Grain boundaries, including twin boundaries, in the sphalerite lattice
    are uniquely characterized by the crystallographic misorientation
    of individual grains and the direction of the crystal polarity in
    domains adjoining the grain boundary. To evaluate crystal polarity
    in gallium phosphide (GaP), asymmetrical interference contrast in
    convergent-beam electron-diffraction (CBED) patterns was used to
    ascertain the nature and direction of polar bonds. The direction
    of the asymmetry in the electron diffraction reflections was correlated
    with the crystal polarity of a sample with known polarity. The CBED
    technique was applied to determine the polar orientation of grains
    adjoining Sigma = 3 coherent and lateral twin boundaries in polycrystalline
    GaP.},

  journal = {Microscopy and microanalysis : the official journal of Microscopy
    Society of America, Microbeam Analysis Society, Microscopical Society
    of Canada},
  keywords = {compound semiconduc-,convergent-beam electron diffraction,crystal
    polarity,diffraction contrast,grain boundaries,interface structure,tors,twin
    boundaries},
  pmid = {10383990}
}

@ARTICLE{COHENSOLAL1994,
  author = {COHENSOLAL, G and BAILLY, F and BARBE, M},
  title = {{Critical thickness in heteroepitaxial growth of zinc-blende semiconductor
    compounds}},
  year = {1994},
  volume = {138},
  number = {1-4},
  month = apr,
  pages = {68--74},
  issn = {00220248},
  doi = {10.1016/0022-0248(94)90782-X},

  journal = {Journal of Crystal Growth},
  publisher = {Elsevier}
}

@ARTICLE{Cole1984,
  author = {Cole, H. S. and Woodbury, H. H. and Schetzina, J. F.},
  title = {{High quality epitaxial films of CdTe on sapphire}},
  year = {1984},
  volume = {55},
  number = {8},
  pages = {3166},
  issn = {00218979},
  doi = {10.1063/1.333345},

  annote = { From Duplicate 1 ( High quality epitaxial films of CdTe on sapphire
    - Cole, H. S.; Woodbury, H. H.; Schetzina, J. F. )


     From Duplicate 1 ( High quality epitaxial films of CdTe on sapphire
    - Cole, H. S.; Woodbury, H. H.; Schetzina, J. F. )






     },

  journal = {Journal of Applied Physics}
}

@ARTICLE{Cole2006a,
  author = {Cole, Joseph R. and Halas, N. J.},
  title = {{Optimized plasmonic nanoparticle distributions for solar spectrum
    harvesting}},
  year = {2006},
  volume = {89},
  number = {15},
  pages = {153120},
  issn = {00036951},
  doi = {10.1063/1.2360918},


  journal = {Applied Physics Letters}
}

@BOOK{Colinge2002,
  author = {Colinge, J. P. and Colinge, C. A.},
  title = {{Physics of semiconductor devices}},
  year = {2002},
  publisher = {Kluwer Academic Publishers},
  isbn = {0-306-47622-3},

}

@ARTICLE{Cordes1994,
  author = {Cordes, H and Schmid-Fetzer, R},
  title = {{The role of interfacial reactions in Pt/CdTe contact formation}},
  year = {1994},
  volume = {9},
  number = {11},
  month = nov,
  pages = {2085--2096},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/9/11/009},

  annote = { From Duplicate 1 ( The role of interfacial reactions in Pt/CdTe
    contact formation - Cordes, H; Schmid-Fetzer, R )


     From Duplicate 1 ( The role of interfacial reactions in Pt/CdTe contact
    formation - Cordes, H; Schmid-Fetzer, R )






     },

  journal = {Semiconductor Science and Technology}
}

@ARTICLE{Couto1992,
  author = {Couto, M},
  title = {{Scanning tunneling microscopy of polished diamond surfaces}},
  year = {1992},
  volume = {62},
  number = {4},
  pages = {263--268},
  issn = {01694332},
  doi = {10.1016/0169-4332(92)90367-7},


  journal = {Applied Surface Science}
}

@ARTICLE{Crowbll1965,
  author = {Crowell, CR},
  title = {{The Richardson constant for thermionic emission in Schottky barrier
    diodes}},
  year = {1965},
  volume = {8},
  number = {4},
  pages = {395--399},


  journal = {Solid-St. Electron.},
  publisher = {Elsevier}
}

@ARTICLE{Curiotto2011,
  author = {Curiotto, Stefano and Chien, Harry and Meltzman, Hila and Wynblatt,
    Paul and Rohrer, Gregory S. and Kaplan, Wayne D. and Chatain, Dominique},
  title = {{Orientation relationships of copper crystals on c-plane sapphire}},
  year = {2011},
  volume = {59},
  number = {13},
  month = jun,
  pages = {5320--5331},
  issn = {13596454},
  doi = {10.1016/j.actamat.2011.05.008},


  journal = {Acta Materialia},
  keywords = {a-al 2 o 3,alumina,copper,electron backscattered diffraction,interface
    energy,orientation relationship},
  publisher = {Acta Materialia Inc.}
}

@BOOK{Cuthbert2010,
  author = {Cuthbert, Scott and Rosner, Anthony},
  title = {{Applied kinesiology methods for a 10-year-old child with headaches,
    neck pain, asthma, and reading disabilities.}},
  year = {2010},
  volume = {9},
  number = {3},
  isbn = {9781844074013},
  pages = {138--45},
  doi = {10.1016/j.jcm.2010.05.002},

  abstract = {The purpose of this case report is to describe the chiropractic care
    of a 10-year-old boy who presented with developmental delay syndromes,
    asthma, and chronic neck and head pain and to present an overview
    of his muscular imbalances during manual muscle testing evaluation
    that guided the interventions offered to this child.},
  booktitle = {Journal of chiropractic medicine},

  issn = {1556-3715},
  month = oct,
  pmid = {22027037}
}

@ARTICLE{Davami2011,
  author = {Davami, Keivan and Ghassemi, Hessam M and Sun, Xuhui and Yassar,
    Reza S and Lee, Jeong-Soo and Meyyappan, M},
  title = {{In situ observation of morphological change in CdTe nano- and submicron
    wires.}},
  year = {2011},
  volume = {22},
  number = {43},
  month = oct,
  pages = {435204},
  issn = {1361-6528},
  doi = {10.1088/0957-4484/22/43/435204},

  abstract = {We report growth and characterization of CdTe wires 30-400 nm in diameter
    by the vapor-liquid-solid technique. Individual nanowires were placed
    on a movable piezotube, which allowed three-dimensional motion toward
    a scanning tunneling microscope (STM). A bias was applied to the
    STM tip in contact with the nanowire, and the morphological changes
    due to Joule heating were observed in situ using a transmission electron
    microscope (TEM) in real time. For thick CdTe wires (d > \~{}150
    nm), the process results in the growth of superfine nanowires (SFNWs)
    of 2-4 nm diameter on the surface of the wire. Smaller diameter nanowires,
    in contrast, disintegrate under the applied bias before the complete
    evolution of SFNWs on the surface.},

  journal = {Nanotechnology},
  pmid = {21971180}
}

@ARTICLE{Davies2005,
  author = {Davies, Mark J and Parker, Stephen C and Watson, Graeme W},
  title = {{Atomistic simulation of the surface structure of spinel}},
  year = {2005},
  number = {4},
  pages = {813},
  journal = {Journal of Materials Chemistry}
}

@ARTICLE{Dayal2007,
  author = {Dayal, P Babu and Koyama, F},
  title = {{Polarization control of 0.85 mu m vertical-cavity surface-emitting
    lasers integrated with gold nanorod arrays}},
  year = {2007},
  volume = {91},
  number = {11},
  pages = {111107},

  journal = {Applied Physics Letters},
  keywords = {gold,laser modes,nanowires,polarisation,surface emitting lasers,surface
    plasmons},
  publisher = {AIP}
}

@ARTICLE{Degawa2006,
  author = {Degawa, M and Thurmer, K and Williams, E D},
  title = {{Constrained evolution of nanocrystallites}},
  year = {2006},
  volume = {74},
  number = {15},
  pages = {155432},

  journal = {Physical Review B},
  keywords = {adhesion,crystallites,diffusion,free energy,lead,nanostructured materials},
  publisher = {APS}
}

@ARTICLE{Derkacs2006,
  author = {Derkacs, D. and Lim, S. H. and Matheu, P. and Mar, W. and Yu, E.
    T.},
  title = {{Improved performance of amorphous silicon solar cells via scattering
    from surface plasmon polaritons in nearby metallic nanoparticles}},
  year = {2006},
  volume = {89},
  number = {9},
  pages = {093103},
  issn = {00036951},
  doi = {10.1063/1.2336629},


  journal = {Applied Physics Letters}
}

@ARTICLE{Desnica1998a,
  author = {Desnica, U V},
  title = {{Doping limits in II?VI compounds ? Challenges, problems and solutions}},
  year = {1998},
  volume = {36},
  number = {4},
  pages = {291--357},
  issn = {09608974},
  doi = {10.1016/S0960-8974(98)00011-4},

  annote = { From Duplicate 2 ( Doping limits in II?VI compounds ? Challenges,
    problems and solutions - Desnica, U V )


     From Duplicate 2 ( Doping limits in II?VI compounds ? Challenges,
    problems and solutions - Desnica, U V )






     },

  journal = {Progress in Crystal Growth and Characterization of Materials}
}

@MISC{patent,
  author = {Devenyi, G. A. and Jovanovic, S. M. and Preston, J. S.},
  title = {{ARBITRARILY THIN ULTRA SMOOTH FILM WITH BUILT-IN SEPARATION ABILITY
    AND METHOD OF FORMING THE SAME}},
  year = {2012},
  abstract = {The invention is comprised of a thin film grown on a substrate, with
    designed-in ability to detach from said substrate upon appropriate
    application of force or energy. This film can either be a single
    material, or a graded/stepped structure. The film is of arbitrary
    thickness. The film is flat on the order of a polished wafer. The
    thin film can be patterned via lithography prior to separation. The
    film after separation is free standing, independent of the growth
    substrate, or bonded to a new carrier substrate for support or electrical
    connection depending on the application. It can be patterned via
    lithography post separation. The original growth substrate is left
    free of film and can be reused for subsequent film growths. The freestanding
    film is separated through application of energy or force to trigger
    the built in separation of the film from a substrate upon which it
    was grown. These include, but are not limited to, mechanical, thermal,
    vibrational, piezoelectric, and optical energies or forces. The growth
    substrate is of any form which allows for the built in ability of
    the film to detach from the substrate. The crystalline nature of
    the film depends upon the presented template from the substrate and
    can range from single crystalline, to amorphous depending on the
    pairing of film material to substrate.},
  pages = {27},
  publisher = {United States Patent Office}
}

@ARTICLE{Devenyi2009,
  author = {Devenyi, Gabriel A and Li, Jianfeng and Hughes, Robert A and Shi,
    An-Chang and Mascher, Peter and Preston, John S},
  title = {{Epitaxially driven formation of intricate supported gold nanostructures
    on a lattice-matched oxide substrate}},
  year = {2009},
  volume = {9},
  number = {12},
  month = dec,
  pages = {4258--63},
  issn = {1530-6992},
  doi = {10.1021/nl902491g},
  abstract = {A new class of gold nanostructures has been fabricated on the (100),
    (111), and (110) surfaces of lattice-matched MgAl(2)O(4) substrates.
    The nanostructures were fabricated through a synthesis route where
    a thin gold film dewets, liquefies, and then slowly self-assembles.
    The supported nanostructures are intricately shaped, crystalline,
    and epitaxially aligned. Simulations based on a continuum elastic
    theory indicate that the self-assembly is driven by strained epitaxy
    and minimization of the surface free energy.},

  journal = {Nano letters},
  keywords = {Aluminum Compounds,Aluminum Compounds: chemistry,Crystallization,Crystallization:
    methods,Gold,Gold: chemistry,Macromolecular Substances,Macromolecular
    Substances: chemistry,Magnesium Compounds,Magnesium Compounds: chemistry,Materials
    Testing,Molecular Conformation,Nanostructures,Nanostructures: chemistry,Nanostructures:
    ultrastructure,Nanotechnology,Nanotechnology: methods,Particle Size,Surface
    Properties},
  pmid = {19842693},
  publisher = {American Chemical Society}
}

@ARTICLE{Devenyi2011,
  author = {Devenyi, G. A. and Woo, S. Y. and Ghanad-Tavakoli, S. and Hughes,
    R. A. and Kleiman, R. N. and Botton, G. A. and Preston, J. S.},
  title = {{The role of vicinal silicon surfaces in the formation of epitaxial
    twins during the growth of III-V thin films}},
  year = {2011},
  volume = {110},
  number = {12},
  pages = {124316},
  issn = {00218979},
  doi = {10.1063/1.3671022},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Devenyi2011a,
  author = {Devenyi, G. A. and Woo, S. Y. and Ghanad-Tavakoli, S. and Hughes,
    R. A. and Kleiman, R. N. and Botton, G. A. and Preston, J. S.},
  title = {{The role of vicinal silicon surfaces in the formation of epitaxial
    twins during the growth of III-V thin films}},
  year = {2011},
  volume = {110},
  number = {12},
  pages = {124316},
  issn = {00218979},
  doi = {10.1063/1.3671022},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Dhar1996,
  author = {Dhar, N. K. and Wood, C. E. C. and Gray, A. and Wei, H. Y. and Salamanca-Riba,
    L. and Dinan, J. H.},
  title = {{Heteroepitaxy of CdTe on \{211\} Si using crystallized amorphous
    ZnTe templates}},
  year = {1996},
  volume = {14},
  number = {3},
  month = may,
  pages = {2366},
  issn = {0734211X},
  doi = {10.1116/1.588862},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Dhar1997,
  author = {Dhar, N. K. and Zandian, M. and Pasko, J. G. and Arias, J. M. and
    Dinan, J. H.},
  title = {{Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si
    substrates by molecular beam epitaxy}},
  year = {1997},
  volume = {70},
  number = {13},
  pages = {1730},
  issn = {00036951},
  doi = {10.1063/1.118683},


  journal = {Applied Physics Letters}
}

@ARTICLE{Dhar1997a,
  author = {Dhar, N. K. and Zandian, M. and Pasko, J. G. and Arias, J. M. and
    Dinan, J. H.},
  title = {{Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si
    substrates by molecular beam epitaxy}},
  year = {1997},
  volume = {70},
  number = {13},
  pages = {1730},
  issn = {00036951},
  doi = {10.1063/1.118683},


  journal = {Applied Physics Letters}
}

@ARTICLE{Dhar1997b,
  author = {Dhar, N. K. and Zandian, M. and Pasko, J. G. and Arias, J. M. and
    Dinan, J. H.},
  title = {{Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si
    substrates by molecular beam epitaxy}},
  year = {1997},
  volume = {70},
  number = {13},
  pages = {1730},
  issn = {00036951},
  doi = {10.1063/1.118683},


  journal = {Applied Physics Letters}
}

@BOOK{Dhere2006a,
  author = {Dhere, Ramesh and Ramanathan, Kannan and Scharf, John and Moutinho,
    Helio and To, Bobby and Duda, Anna and Noufi, Rommel},
  title = {{Investigation of Cd1-xMgxTe Alloys for Tandem Solar Cell Applications}},
  year = {2006},
  number = {May},
  publisher = {IEEE},
  isbn = {1-4244-0016-3},
  pages = {546--549},
  doi = {10.1109/WCPEC.2006.279513},

  annote = { From Duplicate 2 ( Investigation of Cd1-xMgxTe Alloys for Tandem
    Solar Cell Applications - Dhere, Ramesh; Ramanathan, Kannan; Scharf,
    John; Moutinho, Helio; To, Bobby; Duda, Anna; Noufi, Rommel )


     From Duplicate 1 ( Investigation of Cd1-xMgxTe Alloys for Tandem
    Solar Cell Applications - Dhere, Ramesh; Ramanathan, Kannan; Scharf,
    John; Moutinho, Helio; To, Bobby; Duda, Anna; Noufi, Rommel )






     },
  booktitle = {2006 IEEE 4\textsuperscript{th} World Conference on Photovoltaic
    Energy Conference},

  keywords = {May 2006,NREL/CP-520-39899,bandgap,device,polycrystalline,solar cells
    application,two-junction tandem}
}

@ARTICLE{Dieleman1992,
  author = {Dieleman, J. and {Van De Riet}, E. and Kools, JCS},
  title = {{Laser ablation deposition: mechanism and application}},
  year = {1992},
  volume = {31},
  pages = {1964--1971},


  journal = {Jpn. J. Appl. Phys.}
}

@ARTICLE{Dimova-Malinovska1998,
  author = {Dimova-Malinovska, D.},
  title = {{Application of stain-etched porous silicon in light emitting diodes
    and solar cells}},
  year = {1998},
  volume = {80},
  pages = {207--211},


  journal = {Journal of Luminescence},
  keywords = {light emitting diode,porous silicon,solar cell,transport mechanism}
}

@ARTICLE{Draine2010,
  author = {Draine, Bruce T and Flatau, Piotr J},
  title = {{User Guide for the Discrete Dipole Approximation Code {DDS}CAT 7.1}},
  year = {2010},
  volume = {1},
  month = feb,
  pages = {83},
  eprint = {1002.1505},

  abstract = {DDSCAT 7.1 is an open-source Fortran-90 software package applying
    the discrete dipole approximation to calculate scattering and absorption
    of electromagnetic waves by targets with arbitrary geometries and
    complex refractive index. The targets may be isolated entities (e.g.,
    dust particles), but may also be 1-d or 2-d periodic arrays of "target
    unit cells", allowing calculation of absorption, scattering, and
    electric fields around arrays of nanostructures. The theory of the
    DDA and its implementation in DDSCAT is presented in Draine (1988)
    and Draine \& Flatau (1994), and its extension to periodic structures
    (and near-field calculations) in Draine \& Flatau (2008). DDSCAT
    7.1 includes support for MPI, OpenMP, and the Intel Math Kernel Library
    (MKL). DDSCAT supports calculations for a variety of target geometries.
    Target materials may be both inhomogeneous and anisotropic. It is
    straightforward for the user to "import" arbitrary target geometries
    into the code. DDSCAT automatically calculates total cross sections
    for absorption and scattering and selected elements of the Mueller
    scattering intensity matrix. This User Guide explains how to use
    DDSCAT 7.1 to carry out electromagnetic scattering calculations.
    DDfield, a Fortran-90 code to calculate E and B at user-selected
    locations near the target, is included in the distribution. A number
    of changes have been made since the last release, DDSCAT 7.0 .},
  archiveprefix = {arXiv},
  arxivid = {1002.1505},

  keywords = {Instrumentation and Methods for Astrophysics}
}

@ARTICLE{Draine1994,
  author = {Draine, Bruce T. and Flatau, Piotr J.},
  title = {{Discrete-dipole approximation for scattering calculations}},
  year = {1994},
  volume = {11},
  number = {4},
  month = apr,
  pages = {1491},
  issn = {1084-7529},
  doi = {10.1364/JOSAA.11.001491},

  abstract = {The discrete-dipole approximation (DDA) for scattering calculations,
    including the relationship between the DDA and other methods, is
    reviewed. Computational considerations, i.e., the use of complex-conjugate
    gradient algorithms and fast-Fourier-transform methods, are discussed.
    We test the accuracy of the DDA by using the DDA to compute scattering
    and absorption by isolated, homogeneous spheres as well as by targets
    consisting of two contiguous spheres. It is shown that, for dielectric
    materials (¦m¦ ≲ 2), the DDA permits calculations of scattering and
    absorption that are accurate to within a few percent.},

  journal = {Journal of the Optical Society of America A},
  publisher = {OSA},
  shorttitle = {J. Opt. Soc. Am. A}
}

@ARTICLE{Duffar2010,
  author = {Duffar, Thierry and Nadri, Amal},
  title = {{On the twinning occurrence in bulk semiconductor crystal growth}},
  year = {2010},
  volume = {62},
  number = {12},
  month = jun,
  pages = {955--960},
  issn = {13596462},
  doi = {10.1016/j.scriptamat.2010.02.034},


  journal = {Scripta Materialia},
  keywords = {czochralski technique,directional solidification,facets,semiconductors,twinning},
  publisher = {Acta Materialia Inc.}
}

@ARTICLE{Durose1990,
  author = {Durose, K and Russell, G.J.},
  title = {{Twinning in CdTe}},
  year = {1990},
  volume = {101},
  number = {1-4},
  month = apr,
  pages = {246--250},
  issn = {00220248},
  doi = {10.1016/0022-0248(90)90975-Q},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Dushkina2003,
  author = {Dushkina, Natalia M.},
  title = {{Water jet guided laser versus saw dicing}},
  year = {2003},
  volume = {4977},
  pages = {75--85},
  issn = {0277786X},
  doi = {10.1117/12.479414},


  journal = {Proceedings of SPIE},
  publisher = {Spie}
}

@ARTICLE{Dzhafarov2005,
  author = {Dzhafarov, T D and Ongul, F},
  title = {{Modification of CdTe thin films by Zn reactive diffusion}},
  year = {2005},
  volume = {38},
  number = {20},
  month = oct,
  pages = {3764--3767},
  issn = {0022-3727},
  doi = {10.1088/0022-3727/38/20/002},


  journal = {Journal of Physics D: Applied Physics}
}

@ARTICLE{Ebe1996,
  author = {Ebe, H. and Okamoto, T. and Nishino, H. and Saito, T. and Nishijima,
    Y. and Uchikoshi, M. and Nagashima, M. and Wada, H.},
  title = {{Direct growth of CdTe on (100), (211), and (111) Si by metalorganic
    chemical vapor deposition}},
  year = {1996},
  volume = {25},
  number = {8},
  month = aug,
  pages = {1358--1361},
  issn = {0361-5235},
  doi = {10.1007/BF02655033},

  journal = {Journal of Electronic Materials}
}

@ARTICLE{Ebe1991,
  author = {Ebe, H. and Sawada, a. and Maruyama, K. and Nishijima, Y. and Shinohara,
    K. and Takigawa, H.},
  title = {{Tilt growth of CdTe epilayers on sapphire substrates by MOCVD}},
  year = {1991},
  volume = {115},
  number = {1-4},
  month = dec,
  pages = {718--722},
  issn = {00220248},
  doi = {10.1016/0022-0248(91)90833-Q},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Ebe1991a,
  author = {Ebe, H. and Sawada, a. and Maruyama, K. and Nishijima, Y. and Shinohara,
    K. and Takigawa, H.},
  title = {{Tilt growth of CdTe epilayers on sapphire substrates by MOCVD}},
  year = {1991},
  volume = {115},
  number = {1-4},
  month = dec,
  pages = {718--722},
  issn = {00220248},
  doi = {10.1016/0022-0248(91)90833-Q},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Ebina1980,
  author = {Ebina, Atsuko and Asano, Kiyomitsu and Takahashi, Tadashi},
  title = {{Surface properties of clean, and with adsorbed oxygen, surfaces
    of CdTe (110), \{111\}, and (100) and of CdSe \{0001\} studied by
    electron-energy-loss spectroscopy and Auger-electron spectroscopy}},
  year = {1980},
  volume = {22},
  number = {4},
  month = aug,
  pages = {1980--1991},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.22.1980},

  journal = {Physical Review B}
}

@ARTICLE{Edwards1983,
  author = {Edwards, S. T. and Schreiner, a. F. and Myers, T. M. and Schetzina,
    J. F.},
  title = {{Photoluminescence from CdTe/sapphire films prepared by molecular
    beam epitaxy}},
  year = {1983},
  volume = {54},
  number = {11},
  pages = {6785},
  issn = {00218979},
  doi = {10.1063/1.331842},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Edwards1983a,
  author = {Edwards, S. T. and Schreiner, a. F. and Myers, T. M. and Schetzina,
    J. F.},
  title = {{Photoluminescence from CdTe/sapphire films prepared by molecular
    beam epitaxy}},
  year = {1983},
  volume = {54},
  number = {11},
  pages = {6785},
  issn = {00218979},
  doi = {10.1063/1.331842},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Egan2011,
  author = {Egan, C. K. and Jiang, Q. Z. and Brinkman, a. W.},
  title = {{Morphology and reconstructions of polar CdTe(111)A,B surfaces by
    scanning tunneling microscopy}},
  year = {2011},
  volume = {29},
  number = {1},
  pages = {011021},
  issn = {07342101},
  doi = {10.1116/1.3525914},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{Elam1998,
  author = {Elam, J W and Nelson, C E and Cameron, M A and Tolbert, M A and George,
    S M},
  title = {{Adsorption of H 2 O on a Single-Crystal $\alpha$-Al 2 O 3 (0001)
    Surface}},
  year = {1998},
  volume = {102},
  number = {36},
  month = sep,
  pages = {7008--7015},
  issn = {1520-6106},
  doi = {10.1021/jp981070j},

  journal = {The Journal of Physical Chemistry B}
}

@ARTICLE{Elam1998a,
  author = {Elam, J. W. and Nelson, C. E. and Cameron, M. A. and Tolbert, M.
    A. and George, S. M.},
  title = {{Adsorption of H 2 O on a Single-Crystal $\alpha$-Al 2 O 3 (0001)
    Surface}},
  year = {1998},
  volume = {102},
  number = {36},
  month = sep,
  pages = {7008--7015},
  issn = {1520-6106},
  doi = {10.1021/jp981070j},

  journal = {The Journal of Physical Chemistry B}
}

@ARTICLE{Emziane2006,
  author = {Emziane, M. and Durose, K. and Halliday, D. P. and Bosio, a. and
    Romeo, N.},
  title = {{In situ oxygen incorporation and related issues in CdTe∕CdS photovoltaic
    devices}},
  year = {2006},
  volume = {100},
  number = {1},
  pages = {013513},
  issn = {00218979},
  doi = {10.1063/1.2209788},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Ennaoui1993,
  author = {Ennaoui, a and Fiechter, S and Pettenkofer, C and Alonsovante, N
    and Buker, K and Bronold, M and Hopfner, C and Tributsch, H},
  title = {{Iron disulfide for solar energy conversion}},
  year = {1993},
  volume = {29},
  number = {4},
  month = may,
  pages = {289--370},
  issn = {09270248},
  doi = {10.1016/0927-0248(93)90095-K},

  annote = { From Duplicate 2 ( Iron disulfide for solar energy conversion -
    Ennaoui, a; Fiechter, S; Pettenkofer, C; Alonsovante, N; Buker, K;
    Bronold, M; Hopfner, C; Tributsch, H )


     From Duplicate 2 ( Iron disulfide for solar energy conversion - Ennaoui,
    a; Fiechter, S; Pettenkofer, C; Alonsovante, N; Buker, K; Bronold,
    M; Hopfner, C; Tributsch, H )






     },

  journal = {Solar Energy Materials and Solar Cells}
}

@ARTICLE{ENNAOUI1986,
  author = {ENNAOUI, A and TRIBUTSCH, H},
  title = {{Energetic characterization of the photoactive FeS (pyrite) interface}},
  year = {1986},
  volume = {14},
  number = {6},
  month = dec,
  pages = {461--474},
  issn = {01651633},
  doi = {10.1016/0165-1633(86)90030-4},

  annote = { From Duplicate 1 ( Energetic characterization of the photoactive
    FeS (pyrite) interface - ENNAOUI, A; TRIBUTSCH, H )


     From Duplicate 1 ( Energetic characterization of the photoactive
    FeS (pyrite) interface - ENNAOUI, A; TRIBUTSCH, H )






     },

  journal = {Solar Energy Materials}
}

@ARTICLE{Ernst1989,
  author = {Ernst, F. and Pirouz, P.},
  title = {{The formation mechanism of planar defects in compound semiconductors
    grown epitaxially on \{100\} silicon substrates}},
  year = {1989},
  volume = {4},
  number = {4},
  month = jan,
  pages = {834--842},
  issn = {0884-2914},
  doi = {10.1557/JMR.1989.0834},

  annote = {This is an excellent paper I think supporting our arguments.

     Consider: Steps are known to cause preferential nucleation, this
    paper claims that the nucleation islands are the origin of the twinning,
    this means that twins and steps coincide, something we argue must
    happen for our model.},

  journal = {Journal of Materials Research}
}

@ARTICLE{Eslamian2010,
  author = {Eslamian, Morteza and Sabzi, Fatemeh and Saghir, M Ziad},
  title = {{Modeling of thermodiffusion in liquid metal alloys.}},
  year = {2010},
  volume = {12},
  number = {41},
  month = nov,
  pages = {13835--48},
  issn = {1463-9084},
  doi = {10.1039/c0cp00781a},

  abstract = {In this paper following the linear non-equilibrium thermodynamics
    approach, an expression is derived for the calculation of the thermodiffusion
    factor in binary liquid metal alloys. The expression is comprised
    of two terms; the first term accounts for the thermally driven interactions
    between metal ions, a phenomenon similar to that of the non-ionic
    binary mixtures, such as hydrocarbons; the second term is called
    the electronic contribution and is the mass diffusion due to an internal
    electric field that is induced as a result of the imposed thermal
    gradient. Both terms are formulated as functions of the net heats
    of transport. The ion-ion net heat of transport is simulated by the
    activation energy of viscous flow and the electronic net heat of
    transport is correlated with the force acting on the ions by the
    rearrangement of the conduction electrons and ions. A methodology
    is presented and used to estimate the liquid metal properties, such
    as the partial molar internal energies, enthalpies, volumes and the
    activity coefficients used for model validation. The prediction power
    of the proposed expression along with some other existing thermodiffusion
    models for liquid mixtures, such as the Haase, Kempers, Drickamer
    and Firoozabadi formulas are examined against available experimental
    data obtained on ground or in microgravity environment. The proposed
    model satisfactorily predicts the thermodiffusion data of mixtures
    that are composed of elements with comparable melting points. It
    is also potentially and qualitatively able to predict a sign change
    in thermodiffusion factor of Na-K liquid mixture. With some speculation,
    the sign change is attributed to an anomalous change in thermoelectric
    power of Na-K mixture with composition.},

  journal = {Physical chemistry chemical physics : PCCP},
  pmid = {20856973}
}

@ARTICLE{Etxebarria2012,
  author = {Etxebarria, Ikerne and Tait, Jeffrey G. and Gehlhaar, Robert and
    Pacios, R. and Cheyns, David},
  title = {{Surface treatment patterning of organic photovoltaic films for low-cost
    modules}},
  year = {2012},
  number = {December},
  month = dec,
  issn = {15661199},
  doi = {10.1016/j.orgel.2012.11.018},


  journal = {Organic Electronics},
  publisher = {Elsevier B.V.}
}

@ARTICLE{Fahmi2007,
  author = {Fahmi, Amir and D'Aleo, Anthony and Williams, Rene M and {De Cola},
    Luisa and Gindy, Nabil and Vogtle, Fritz},
  title = {{Converting Self-Assembled Gold Nanoparticle/Dendrimer Nanodroplets
    into Horseshoe-like Nanostructures by Thermal Annealing}},
  year = {2007},
  volume = {23},
  number = {14},
  month = jan,
  pages = {7831--7835},
  doi = {10.1021/la700651m},
  annote = {doi: 10.1021/la700651m},
  journal = {Langmuir}
}

@ARTICLE{FAHRENBRUCH1987a,
  author = {FAHRENBRUCH, A},
  title = {{Ohmic contacts and doping of CdTe}},
  year = {1987},
  volume = {21},
  number = {1-4},
  month = jun,
  pages = {399--412},
  issn = {03796787},
  doi = {10.1016/0379-6787(87)90138-4},

  annote = { From Duplicate 1 ( Ohmic contacts and doping of CdTe - FAHRENBRUCH,
    A )


     From Duplicate 1 ( Ohmic contacts and doping of CdTe - FAHRENBRUCH,
    A )






     },

  journal = {Solar Cells}
}

@ARTICLE{Fan2006,
  author = {Fan, Hong Jin and Werner, Peter and Zacharias, Margit},
  title = {{Semiconductor Nanowires: From Self-Organization to Patterned Growth}},
  year = {2006},
  volume = {2},
  number = {6},
  pages = {700--717},
  doi = {10.1002/smll.200500495},
  address = {Max Planck Institute of Microstructure Physics, Weinberg 2, 06120
    Halle, Germany, Fax: (+49) 345-558-2729; New address: Forschungszentrum
    Rossendorf, 01314 Dresden, Germany},
  isbn = {1613-6829},
  journal = {Small}
}

@ARTICLE{Fang1990,
  author = {Fang, S. F. and Adomi, K. and Iyer, S. and Morkoç, H. and Zabel,
    H. and Choi, C. and Otsuka, N.},
  title = {{Gallium arsenide and other compound semiconductors on silicon}},
  year = {1990},
  volume = {68},
  number = {7},
  pages = {R31},
  issn = {00218979},
  doi = {10.1063/1.346284},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Fang1990a,
  author = {Fang, S. F. and Adomi, K. and Iyer, S. and Morkoç, H. and Zabel,
    H. and Choi, C. and Otsuka, N.},
  title = {{Gallium arsenide and other compound semiconductors on silicon}},
  year = {1990},
  volume = {68},
  number = {7},
  pages = {R31},
  issn = {00218979},
  doi = {10.1063/1.346284},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Farahany2010,
  author = {Farahany, S. and Erfani, M. and Karamoozia, A. and Ourdjini, A. and
    Idris, M. Hasbullah},
  title = {{Artificial Neural Networks to Predict of Liquidus Temperature in
    Hypoeutectic Al-Si Cast Alloys}},
  year = {2010},
  volume = {10},
  number = {24},
  month = dec,
  pages = {3243--3249},
  issn = {18125654},
  doi = {10.3923/jas.2010.3243.3249},


  journal = {Journal of Applied Sciences}
}

@ARTICLE{Farzinpour2013,
  author = {Farzinpour, Pouyan and Sundar, Aarthi and Gilroy, Kyle D and Eskin,
    Zachary E and Hughes, Robert a and Neretina, Svetlana},
  title = {{Dynamic templating: a large area processing route for the assembly
    of periodic arrays of sub-micrometer and nanoscale structures.}},
  year = {2013},
  month = jan,
  issn = {2040-3372},
  doi = {10.1039/c3nr33992k},

  abstract = {A substrate-based templated assembly route has been devised which
    offers large-area, high-throughput capabilities for the fabrication
    of periodic arrays of sub-micrometer and nanometer-scale structures.
    The approach overcomes a significant technological barrier to the
    widespread use of substrate-based templated assembly by eliminating
    the need for periodic templates having nanoscale features. Instead,
    it relies upon the use of a dynamic template with dimensions that
    evolve in time from easily fabricated micrometer dimensions to those
    on the nanoscale as the assembly process proceeds. The dynamic template
    consists of a pedestal of a sacrificial material, typically antimony,
    upon which an ultrathin layer of a second material is deposited.
    When heated, antimony sublimation results in a continuous reduction
    in template size where the motion of the sublimation fronts direct
    the diffusion of atoms of the second material to a predetermined
    location. The route has broad applicability, having already produced
    periodic arrays of gold, silver, copper, platinum, nickel, cobalt,
    germanium and Au-Ag alloys on substrates as diverse as silicon, sapphire,
    silicon-carbide, graphene and glass. Requiring only modest levels
    of instrumentation, the process provides an enabling route for any
    reasonably equipped researcher to fabricate periodic arrays that
    would otherwise require advanced fabrication facilities.},

  journal = {Nanoscale},
  pmid = {23354129}
}

@ARTICLE{FELCH1993,
  author = {FELCH, S and BRENNAN, R and CORCORAN, S and WEBSTER, G},
  title = {{A comparison of three techniques for profiling ultra-shallow p+-n
    junctions}},
  year = {1993},
  volume = {74},
  number = {1-2},
  month = apr,
  pages = {156--159},
  issn = {0168583X},
  doi = {10.1016/0168-583X(93)95035-4},


  journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam
    Interactions with Materials and Atoms}
}

@ARTICLE{Ferr2000,
  author = {Ferr, J.},
  title = {{Influence of surfactants on atomic diffusion}},
  year = {2000},
  volume = {459},
  number = {1-2},
  month = jul,
  pages = {135--148},
  doi = {10.1016/S0039-6028(00)00459-3},

  journal = {Surface Science},
  keywords = {atomistic dynamics,copper,growth,lead,metal,metal interfaces,monte
    carlo simulations,surface diffusion}
}

@ARTICLE{Ferr2000a,
  author = {Ferr, J.},
  title = {{Influence of surfactants on atomic diffusion}},
  year = {2000},
  volume = {459},
  number = {1-2},
  month = jul,
  pages = {135--148},
  doi = {10.1016/S0039-6028(00)00459-3},

  journal = {Surface Science},
  keywords = {atomistic dynamics,copper,growth,lead,metal,metal interfaces,monte
    carlo simulations,surface diffusion}
}

@INPROCEEDINGS{Ferrada2009,
  author = {Ferrada, Pablo and Harney, R. and Wefringhaus, E. and Lossen, J.
    and Meyer, K.},
  title = {diffusion through semitransparent barriers on p-type silicon wafers},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {1897--1900},

  keywords = {diffusion through silicon oxide,selective emitter cell,selectivity}
}

@ARTICLE{Ferrero2001,
  author = {Ferrero, Sylvain and Piednoir, Agnes and Henry, Claude R},
  title = {{Atomic Scale Imaging by UHV-AFM of Nanosized Gold Particles on Mica}},
  year = {2001},
  volume = {1},
  number = {5},
  month = jan,
  pages = {227--230},
  doi = {10.1021/nl010014i},
  annote = {doi: 10.1021/nl010014i},
  journal = {Nano Letters}
}

@ARTICLE{Fischer1986,
  author = {Fischer, R. and Morkoç, H. and Neumann, D. a. and Zabel, H. and
    Choi, C. and Otsuka, N. and Longerbone, M. and Erickson, L. P.},
  title = {{Material properties of high-quality {GaAs} epitaxial layers grown
    on Si substrates}},
  year = {1986},
  volume = {60},
  number = {5},
  pages = {1640},
  issn = {00218979},
  doi = {10.1063/1.337253},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Fischer1986b,
  author = {Fischer, R. and Morkoç, H. and Neumann, D. A. and Zabel, H. and
    Choi, C. and Otsuka, N. and Longerbone, M. and Erickson, L. P.},
  title = {{Material properties of high-quality {GaAs} epitaxial layers grown
    on Si substrates}},
  year = {1986},
  volume = {60},
  number = {5},
  pages = {1640},
  issn = {00218979},
  doi = {10.1063/1.337253},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Fischer1986a,
  author = {Fischer, R. and Neuman, D. and Zabel, H. and Morkoç, H. and Choi,
    C. and Otsuka, N.},
  title = {{Dislocation reduction in epitaxial {GaAs} on Si(100)}},
  year = {1986},
  volume = {48},
  number = {18},
  pages = {1223--1225},
  issn = {00036951},
  doi = {10.1063/1.96988},


  journal = {Applied Physics Letters}
}

@ARTICLE{Fossum1977,
  author = {Fossum, J.G.},
  title = {{Physical operation of back-surface-field silicon solar cells}},
  year = {1977},
  volume = {24},
  number = {4},
  month = apr,
  pages = {322--325},
  issn = {0018-9383},
  doi = {10.1109/T-ED.1977.18735},


  journal = {IEEE Transactions on Electron Devices}
}

@ARTICLE{Frensley1977,
  author = {Frensley, WR and Kroemer, H.},
  title = {{Theory of the energy-band lineup at an abrupt semiconductor heterojunction}},
  year = {1977},
  volume = {16},
  number = {6},
  pages = {2642},


  journal = {Physical Review B},
  publisher = {APS}
}

@ARTICLE{Frensley1977a,
  author = {Frensley, WR and Kroemer, H.},
  title = {{Theory of the energy-band lineup at an abrupt semiconductor heterojunction}},
  year = {1977},
  volume = {16},
  number = {6},
  pages = {2642},


  journal = {Physical Review B},
  publisher = {APS}
}

@ARTICLE{Fu2007,
  author = {Fu, Qiang and Wagner, Thomas},
  title = {{Interaction of nanostructured metal overlayers with oxide surfaces}},
  year = {2007},
  volume = {62},
  number = {11},
  month = nov,
  pages = {431--498},
  issn = {01675729},
  doi = {10.1016/j.surfrep.2007.07.001},


  journal = {Surface Science Reports},
  publisher = {Elsevier}
}

@ARTICLE{Gajdardziska-Josifovska1991,
  author = {Gajdardziska-Josifovska, M. and Crozier, P.A. and Cowley, J.M.},
  title = {{A (√3 × √3)R30° reconstruction on annealed (111) surfaces of MgO}},
  year = {1991},
  volume = {248},
  number = {1-2},
  month = may,
  pages = {L259--L264},
  issn = {00396028},
  doi = {10.1016/0039-6028(91)90054-V},


  journal = {Surface Science}
}

@ARTICLE{Galbiati2011,
  author = {Galbiati, G. and Mihailetchi, V.D. and Halm, A. and Roescu, R. and
    Kopecek, R.},
  title = {{Results on n-type IBC solar cells using industrial optimized techniques
    in the fabrication processing}},
  year = {2011},
  volume = {8},
  number = {April},
  month = jan,
  pages = {421--426},
  issn = {18766102},
  doi = {10.1016/j.egypro.2011.06.160},


  journal = {Energy Procedia},
  keywords = {06,10,1016,160,1876,2011,2011 published by elsevier,6102,cell,doi,egypro,interdigitated
    back contact solar,j,ltd,n-type,of siliconpv 2011,or peer-review
    under responsibility,selection and}
}

@ARTICLE{Gan2007,
  author = {Gan, Y and Wanless, E and Franks, G},
  title = {{Lattice-resolution imaging of the sapphire (0001) surface in air
    by AFM}},
  year = {2007},
  volume = {601},
  number = {4},
  month = feb,
  pages = {1064--1071},
  issn = {00396028},
  doi = {10.1016/j.susc.2006.11.057},


  journal = {Surface Science},
  keywords = {aluminum oxide,and topography,atomic force microscopy,morphology,roughness,stepped
    single-crystal surfaces,surface structure}
}

@ARTICLE{Gangopadhyay2005,
  author = {Gangopadhyay, U and Kim, Kyunghae and Dhungel, S K and Yi, J},
  title = {{Effect of Novel Surface Treatment on Large-Area Low-Cost SOD Diffused
    Monocrystalline Silicon Solar Cells}},
  year = {2005},
  volume = {47},
  number = {6},
  pages = {1035--1040},

  journal = {J. Korean Physical Society},
  keywords = {hot hcl,monocrystalline,silicon,solar cell,spin-on doping}
}

@ARTICLE{Garces-Chavez2003,
  author = {Garc\'{e}s-Ch\'{a}vez, V. and McGloin, D. and Padgett, M. and Dultz,
    W. and Schmitzer, H. and Dholakia, K.},
  title = {{Observation of the Transfer of the Local Angular Momentum Density
    of a Multiringed Light Beam to an Optically Trapped Particle}},
  year = {2003},
  volume = {91},
  number = {9},
  month = aug,
  pages = {1--4},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.91.093602},

  journal = {Physical Review Letters}
}

@ARTICLE{Gardner1990,
  author = {Gardner, DS and Flinn, PA},
  title = {{Mechanical stress as a function of temperature for aluminum alloy
    films}},
  year = {1990},
  volume = {67},
  pages = {1831},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Georgakilas2011,
  author = {Georgakilas, A. and Stoemenos, J. and Tsagaraki, K. and Komninou,
    Ph. and Flevaris, N. and Panayotatos, P. and Christou, A.},
  title = {{Generation and annihilation of antiphase domain boundaries in {GaAs}
    on Si grown by molecular beam epitaxy}},
  year = {1993},
  volume = {8},
  number = {8},
  month = jan,
  pages = {1908--1921},
  issn = {0884-2914},
  doi = {10.1557/JMR.1993.1908},

  annote = {I have annotations!},

  journal = {Journal of Materials Research}
}

@ARTICLE{Giles-Taylor1985,
  author = {Giles-Taylor, N. C.},
  title = {{Photoluminescence of CdTe: A comparison of bulk and epitaxial material}},
  year = {1985},
  volume = {3},
  number = {1},
  month = jan,
  pages = {76},
  issn = {07342101},
  doi = {10.1116/1.573250},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@INPROCEEDINGS{Glunz,
  author = {Glunz, S. W. and Willeke, G. P. and Janz, S and Hofmann, Marc and
    Roth, T},
  title = {{Surface passivation of silicon solar cells using amorphous silicon
    carbide layers}},

}

@ARTICLE{Gnatyuk2011,
  author = {Gnatyuk, Volodymyr a. and Levytskyi, Sergiy N. and Vlasenko, Oleksandr
    I. and Aoki, Toru},
  title = {{Laser-Induced Doping of CdTe Crystals in Different Environments}},
  year = {2011},
  volume = {222},
  month = apr,
  pages = {32--35},
  issn = {1662-8985},
  doi = {10.4028/www.scientific.net/AMR.222.32},


  journal = {Advanced Materials Research},
  keywords = {abstract,an in dopant film,cdte crystals pre-coated with,different
    procedures of laser-induced,doping of the surface,gas or water,i-v
    characteristics,irradiation with nanosecond laser,laser-induced doping,p-n
    junction,pulses in different environments,region of semi-insulating
    cdte,semiconductor are discussed,the,vacuum,were subjected to,x-
    and $\gamma$-ray detector}
}

@BOOK{Goetzberger1997,
  author = {Goetzberger, A. and Knobloch, J. and Vo\ss, B.},
  title = {{Physik und Technologie der Solarzelle}},
  year = {1994},
  editor = {{Teubner-Verlag. Stuttgart}},

}

@BOOK{Gompper2008,
  author = {Gompper, Gerhard and Schick, Michael},
  title = {{Soft Matter: Volume 4: Lipid Bilayers and Red Blood Cells}},
  year = {2008},
  publisher = {Wiley-VCH},
  isbn = {3527315020},
  pages = {265},

  annote = {The fourth volume in this series focuses on biological membrane science,
    in particular its biophysics. Clearly divided into two parts, the
    first covers red blood cell shapes, while the second part on molecular
    simulation provides in-depth information on how to make significant
    progress with membrane characterization by means of models, and how
    to refine them by comparing them to experiments. The result is a
    highly relevant monograph for both an understanding of the biophysical
    concepts as well as of novel applications.}
}

@ARTICLE{Goniakowski2008,
  author = {Goniakowski, Jacek and Finocchi, Fabio and Noguera, Claudine},
  title = {{Polarity of oxide surfaces and nanostructures}},
  year = {2008},
  volume = {71},
  number = {1},
  month = jan,
  pages = {016501},
  issn = {0034-4885},
  doi = {10.1088/0034-4885/71/1/016501},


  journal = {Reports on Progress in Physics}
}

@ARTICLE{Gonzalo2005,
  author = {Gonzalo, J. and Perea, a. and Babonneau, D. and Afonso, C. and Beer,
    N. and Barnes, J.-P. and Petford-Long, a. and Hole, D. and Townsend,
    P.},
  title = {{Competing processes during the production of metal nanoparticles
    by pulsed laser deposition}},
  year = {2005},
  volume = {71},
  number = {12},
  month = mar,
  pages = {1--8},
  issn = {1098-0121},
  doi = {10.1103/PhysRevB.71.125420},

  journal = {Physical Review B}
}

@ARTICLE{Gonzalo2005a,
  author = {Gonzalo, J. and Perea, a. and Babonneau, D. and Afonso, C. and Beer,
    N. and Barnes, J.-P. and Petford-Long, a. and Hole, D. and Townsend,
    P.},
  title = {{Competing processes during the production of metal nanoparticles
    by pulsed laser deposition}},
  year = {2005},
  volume = {71},
  number = {12},
  month = mar,
  pages = {1--8},
  issn = {1098-0121},
  doi = {10.1103/PhysRevB.71.125420},

  journal = {Physical Review B}
}

@ARTICLE{Goradia1980,
  author = {Goradia, C.},
  title = {{A one-dimensional theory of high base resistivity tandem-junction
    solar cells in low injection}},
  year = {1980},
  volume = {27},
  number = {4},
  month = apr,
  pages = {777--785},
  issn = {0018-9383},
  doi = {10.1109/T-ED.1980.19936},

  annote = { From Duplicate 1 ( A one-dimensional theory of high base resistivity
    tandem-junction solar cells in low injection - Goradia, C. )


     From Duplicate 1 ( A one-dimensional theory of high base resistivity
    tandem-junction solar cells in low injection - Goradia, C. )






     },

  journal = {IEEE Transactions on Electron Devices}
}

@ARTICLE{Gottschalk1978,
  author = {Gottschalk, H. and Patzer, G. and Alexander, H.},
  title = {{Stacking fault energy and ionicity of cubic III-V compounds}},
  year = {1978},
  volume = {45},
  number = {1},
  month = jan,
  pages = {207--217},
  issn = {00318965},
  doi = {10.1002/pssa.2210450125},
  journal = {Physica Status Solidi (a)}
}

@ARTICLE{Gowers1984,
  author = {Gowers, J. P.},
  title = {{TEM image contrast from antiphase domains in {GaAs}: Ge(001) grown
    by MBE}},
  year = {1984},
  volume = {34},
  number = {4},
  month = aug,
  pages = {231--236},
  issn = {0721-7250},
  doi = {10.1007/BF00616577},

  journal = {Applied Physics A Solids and Surfaces}
}

@INPROCEEDINGS{Grasso2010,
  author = {Grasso, F.S. and Gautero, L. and Rentsch, J. and Preu, R. and Lanzafame,
    R.},
  title = {{Characterisation of Local Al-BSF Formation for PERC Solar Cell Structures}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {371--374},
  doi = {10.4229/25thEUPVSEC2010-1DV.2.22},

  keywords = {8,and,at the contact,back contact,back-surface-field,inkjet,minority
    carriers and can,perc,recombination velocity,reduce the surface,screen
    printing,silicon solar cell,srv}
}

@ARTICLE{Green2011,
  author = {Green, M.A},
  title = {{Ag requirements for silicon wafer-based solar cells}},
  year = {2011},
  volume = {19},
  number = {8},
  pages = {911--916},
  doi = {10.1002/pip},

  journal = {Prog. Photovoltaics},
  keywords = {ag requirements,material limits}
}

@ARTICLE{Green2011a,
  author = {Green, Martin A},
  title = {{Ag requirements for silicon wafer ‐ based solar cells}},
  year = {2011},
  volume = {19},
  number = {8},
  pages = {911--916},
  issn = {10627995},
  doi = {10.1002/pip},
  abstract = {ABSTRACT In 2010, about 2000 t of Ag were used in the contact metallization
    of silicon wafer-based photovoltaics, consuming approximately 7\%
    of the total annual world Ag supply. With the growth of the photovoltaic
    industry by 10 times/decade over coming decades not out of the question,
    Ag supply is clearly an impending material resource issue. Minimum
    requirements for screen-printed cells are analyzed with the conclusion
    that design changes will likely be required over the coming decade
    to reduce use. Copyright 2011 John Wiley \& Sons, Ltd. ABSTRACT FROM
    AUTHOR},
  journal = {Economic Analysis},
  keywords = {ag requirements,material limits},
  publisher = {John Wiley \& Sons, Ltd}
}

@ARTICLE{Greenberg1996,
  author = {Greenberg, J.H.},
  title = {{P-T-X phase equilibrium and vapor pressure scanning of non-stoichiometry
    in CdTe}},
  year = {1996},
  volume = {161},
  number = {1-4},
  month = apr,
  pages = {1--11},
  issn = {00220248},
  doi = {10.1016/0022-0248(95)00603-6},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Greenberg1993,
  author = {Greenberg, J.H. and Guskov, V.N. and Lazarev, V.B. and Shebershneva,
    O.V.},
  title = {{Vapor Pressure Scanning of Nonstoichiometry in CdTe}},
  year = {1993},
  volume = {102},
  number = {2},
  month = feb,
  pages = {382--389},
  issn = {00224596},
  doi = {10.1006/jssc.1993.1049},


  journal = {Journal of Solid State Chemistry}
}

@ARTICLE{Greenberg1999,
  author = {Greenberg, Jacob H.},
  title = {{Vapor pressure scanning implications of CdTe crystal growth}},
  year = {1999},
  volume = {197},
  number = {3},
  month = feb,
  pages = {406--412},
  issn = {00220248},
  doi = {10.1016/S0022-0248(98)00738-6},


  journal = {Journal of Crystal Growth},
  keywords = {cdte,crystal growth,nonstoichiometry,vapor pressure scanning}
}

@ARTICLE{Grill2004,
  author = {Grill, R. and Zappettini, a.},
  title = {{Point defects and diffusion in cadmium telluride}},
  year = {2004},
  volume = {48-49},
  month = jan,
  pages = {209--244},
  issn = {09608974},
  doi = {10.1016/j.pcrysgrow.2005.06.001},


  journal = {Progress in Crystal Growth and Characterization of Materials},
  keywords = {a1,b2,c420 221 911 331,c420 224 922 797,cadmium telluride,corresponding
    author,cuni,cz,diffusion,e-mail address,fax,grill,karlov,mff,phase
    equilibria,point defects,r,semiconducting iievi materials,tel}
}

@ARTICLE{Groenert2006a,
  author = {Groenert, M. E. and Markunas, J. K.},
  title = {{CdZnTe Graded Buffer Layers for HgCdTe/Si Integration}},
  year = {2006},
  volume = {35},
  number = {6},
  pages = {1287--1292},


  journal = {Journal of Electronic Materials},
  keywords = {cdte,cdznte,dislocations,graded buffer z,si,tilt}
}

@ARTICLE{Grohe2006,
  author = {Grohe, A. and Harmel, C. and Knorz, A. and Glunz, S. W. and Preu,
    R. and Willeke, G. P.},
  title = {{Selective Laser Ablation of Anti-Reflection Coatings for Novel Metallization
    Techniques}},
  year = {2006},
  month = may,
  pages = {1399--1402},
  doi = {10.1109/WCPEC.2006.279713},


  isbn = {1-4244-0016-3},
  journal = {4th IEEE WCPVEC (unpublished)},
  publisher = {Ieee}
}

@INPROCEEDINGS{Grohe2009,
  author = {Grohe, A. and Nekarda, J. and Hofmann, Marc and Catoir, J. and Fleischhauer,
    B. and Schneiderl\"{o}chner, E. and Glunz, S. W. and Preu, R.},
  title = {{LASER TECHNOLOGY FOR CONTACTING HIGH-EFFICIENCY SILICON SOLAR CELLS
    THE LASER-{FIR}ED CONTACTS APPROACH}},
  booktitle = {Solar Cells},
  year = {2009},
  volume = {49},
  number = {0},
  pages = {2--3},


}

@INPROCEEDINGS{Gundel2009,
  author = {Gundel, Paul and Schubert, Martin C. and Kwapil, Wolfram and Sch\"{o}n,
    Jonas and Reiche, Manfred and Savin, Hele and Yli-koski, Marko and
    Sans, Angel and Martinez-criado, Gema and Warta, Wilhelm and Weber,
    Eicke R},
  title = {{MICRO-LUMINESCENCE SPECTROSCOPY ON MULTICRYSTALLINE SILICON}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {21--25},

  keywords = {multicrystalline silicon,photoluminescence,precipitates,stress,synchrotron}
}

@ARTICLE{Gunn1958,
  author = {Gunn, J. B.},
  title = {{On Carrier Accumulation, and the Properties of Certain Semiconductor
    Junctions†}},
  year = {1958},
  volume = {4},
  number = {1},
  pages = {17--50},
  issn = {0020-7217},
  doi = {10.1080/00207215808953823},


  journal = {International Journal of Electronics}
}

@ARTICLE{Gupta2011a,
  author = {Gupta, Akhlesh and Matulionis, I. and Drayton, J. and Compaan, A.D.},
  title = {{Effect of CdTe thickness reduction in high efficiency CdS/CdTe solar
    cells}},
  year = {2011},
  volume = {668},
  month = mar,
  pages = {1--6},
  issn = {1946-4274},
  doi = {10.1557/PROC-668-H6.4},

  annote = { From Duplicate 2 ( Effect of CdTe thickness reduction in high efficiency
    CdS/CdTe solar cells - Gupta, Akhlesh; Matulionis, I.; Drayton, J.;
    Compaan, A.D. )


     From Duplicate 2 ( Effect of CdTe thickness reduction in high efficiency
    CdS/CdTe solar cells - Gupta, Akhlesh; Matulionis, I.; Drayton, J.;
    Compaan, A.D. )






     },

  journal = {MRS Proceedings}
}

@ARTICLE{Gutknecht1972,
  author = {Gutknecht, P.},
  title = {{Schottky barrier height dependence on Si crystal orientation}},
  year = {1972},
  volume = {21},
  number = {9},
  pages = {405},
  issn = {00036951},
  doi = {10.1063/1.1654431},


  journal = {Applied Physics Letters}
}

@ARTICLE{Hagglund2009,
  author = {H\"{a}gglund, Carl and Kasemo, Bengt},
  title = {{Nanoparticle plasmonics for {2D}-photovoltaics: mechanisms, optimization,
    and limits.}},
  year = {2009},
  volume = {17},
  number = {14},
  month = jul,
  pages = {11944--57},
  issn = {1094-4087},

  abstract = {Plasmonic nanostructures placed within or near photovoltaic (PV) layers
    are of high current interest for improving thin film solar cells.
    We demonstrate, by electrodynamics calculations, the feasibility
    of a new class of essentially two dimensional (2D) solar cells based
    on the very large optical cross sections of plasmonic nanoparticles.
    Conditions for inducing absorption in extremely thin PV layers via
    plasmon near-fields, are optimized in 2D-arrays of (i) core-shell
    particles, and (ii) plasmonic particles on planar layers. At the
    plasmon resonance, a pronounced optimum is found for the extinction
    coefficient of the PV material. We also characterize the influence
    of the dielectric environment, PV layer thickness and nanoparticle
    shape, size and spatial distribution. The response of the system
    is close to that of a 2D effective medium layer, and subject to a
    50\% absorption limit when the dielectric environment around the
    2D layer is symmetric. In this case, a plasmon induced absorption
    of about 40\% is demonstrated in PV layers as thin as 10 nm, using
    silver nanoparticle arrays of only 1 nm effective thickness. In an
    asymmetric environment, the useful absorption may be increased significantly
    for the same layer thicknesses. These new types of essentially 2D
    solar cells are concluded to have a large potential for reducing
    solar electricity costs.},

  journal = {Optics express},
  keywords = {Anisotropy,Electricity,Equipment Design,Metal Nanoparticles,Metal
    Nanoparticles: chemistry,Nanoparticles,Nanoparticles: chemistry,Nanostructures,Nanostructures:
    chemistry,Nanotechnology,Nanotechnology: methods,Optics and Photonics,Silver,Silver:
    chemistry,Solar Energy,Surface Plasmon Resonance},
  pmid = {19582109}
}

@ARTICLE{Haase2011,
  author = {Haase, Felix and Garralaga, Enrique and Bothe, Karsten and Brendel,
    Rolf},
  title = {{Layer selective laser ablation for local contacts to thin emitters}},
  year = {2011},
  volume = {00},
  number = {2010},
  pages = {1--4},

  journal = {Energy Procedia},
  keywords = {amorphous silicon passivation,local contact openings,selective laser
    ablation,thin back junction emitter}
}

@ARTICLE{Hage-Ali1979,
  author = {Hage-Ali, M. and Stuck, R and Saxena, AN and Siffert, P},
  title = {{Studies of CdTe surfaces with secondary ion mass spectrometry, rutherford
    backscattering and ellipsometry}},
  year = {1979},
  volume = {19},
  number = {1},
  month = may,
  pages = {25--33},
  issn = {0340-3793},
  doi = {10.1007/BF00900533},

  journal = {Applied Physics}
}

@ARTICLE{Han1997,
  author = {Han, M. S. and Kang, T. W. and Leem, J. H. and Song, B. K. and Hou,
    Y. B. and Baek, W. H. and Lee, M. H. and Bahng, J. H. and Kim, K.
    J. and Kim, J. M. and Kim, H. K. and Kim, T. W.},
  title = {{Strain effects in CdTe (111) epitaxial layers grown on {GaAs} (100)
    substrates by molecular beam epitaxy}},
  year = {1997},
  volume = {26},
  number = {6},
  month = jun,
  pages = {507--510},
  issn = {0361-5235},
  doi = {10.1007/s11664-997-0185-6},


  journal = {Journal of Electronic Materials},
  keywords = {cdte,gaas,molecular beam epitaxy,strain effects}
}

@ARTICLE{Han1997a,
  author = {Han, M S and Kang, T W and Leem, J H and Song, B K and Hou, Y B and
    Baek, W. H. and Lee, M. H. and Bahng, J. H. and Kim, K. J. and Kim,
    J. M. and Kim, H. K. and Kim, T. W.},
  title = {{Strain effects in CdTe (111) epitaxial layers grown on {GaAs} (100)
    substrates by molecular beam epitaxy}},
  year = {1997},
  volume = {26},
  number = {6},
  month = jun,
  pages = {507--510},
  issn = {0361-5235},
  doi = {10.1007/s11664-997-0185-6},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,gaas,molecular beam epitaxy,strain effects}
}

@ARTICLE{Hangleiter1990,
  author = {Hangleiter, A. and H\"{a}cker, R.},
  title = {{Enhancement of band-to-band Auger recombination by electron-hole
    correlations}},
  year = {1990},
  volume = {65},
  number = {2},
  month = jul,
  pages = {215--218},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.65.215},

  journal = {Physical Review Letters}
}

@ARTICLE{Hao1997,
  author = {Hao, Maosheng and Shao, Chunlin and Soga, Tetsuo and Jimbo, Takashi
    and Umeno, Masayoshi and Liang, Junwu},
  title = {{A theoretical model for the tilt of the epilayers}},
  year = {1997},
  volume = {178},
  number = {3},
  month = jul,
  pages = {276--279},
  issn = {00220248},
  doi = {10.1016/S0022-0248(96)01154-2},


  journal = {Journal of Crystal Growth},
  keywords = {devices process,gaas,heteroepitaxy of semiconductors now,important
    role in semiconductor,it,plays an,semiconductor,si,tilt,was found
    that heteroepitaxial}
}

@ARTICLE{Harris1969,
  author = {Harris, JS and Nannichi, Y. and Pearson, GL and Day, GF},
  title = {{Ohmic Contacts to Solution-Grown Gallium Arsenide}},
  year = {1969},
  volume = {40},
  pages = {4575},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Harrison1978,
  author = {Harrison, WA and Kraut, EA and Waldrop, JR and Grant, RW},
  title = {{Polar heterojunction interfaces}},
  year = {1978},
  volume = {18},
  number = {8},
  pages = {4402},


  journal = {Physical Review B},
  publisher = {APS}
}

@ARTICLE{Harrison1978a,
  author = {Harrison, WA and Kraut, EA and Waldrop, JR and Grant, RW},
  title = {{Polar heterojunction interfaces}},
  year = {1978},
  volume = {18},
  number = {8},
  pages = {4402},


  journal = {Physical Review B},
  publisher = {APS}
}

@INPROCEEDINGS{Hatanaka,
  author = {Hatanaka, Y. and Aoki, T and Niraula, M. and Aoki, Y. and Nakanishi,
    Y.},
  title = {{Laser doping technique for II-VI semiconductors, ZnSe and CdTe}},
  booktitle = {Proceedings of 5\textsuperscript{th} Asian Symposium on Information
    Display. ASID '99 (IEEE Cat. No.99EX291)},
  publisher = {SID Taipei Chapter},
  isbn = {957-97347-9-8},
  pages = {65--68},
  doi = {10.1109/ASID.1999.762715},


}

@ARTICLE{Hatanaka2001,
  author = {Hatanaka, Y and Niraula, M and Nakamura, A and Aoki, T},
  title = {{Excimer laser doping techniques for II-VI semiconductors}},
  year = {2001},
  volume = {175-176},
  number = {November 2000},
  month = may,
  pages = {462--467},
  issn = {01694332},
  doi = {10.1016/S0169-4332(01)00117-9},


  journal = {Applied Surface Science},
  keywords = {cdte,doping technology,excimer laser annealing,ii,laser processing,vi
    compound semiconductor,zno,znse}
}

@ARTICLE{He2011,
  author = {He, X.Q. and Wen, C. and Duan, X.F. and Chen, H.},
  title = {{Identification of atomic steps at AlSb/{GaAs} hetero-epitaxial interface
    using geometric phase method by high-resolution electron microscopy}},
  year = {2011},
  volume = {65},
  number = {3},
  month = feb,
  pages = {456--459},
  issn = {0167577X},
  doi = {10.1016/j.matlet.2010.10.054},


  journal = {Materials Letters},
  keywords = {geometric phase analysis}
}

@ARTICLE{He2011a,
  author = {He, X.Q. and Wen, C. and Duan, X.F. and Chen, H.},
  title = {{Identification of atomic steps at AlSb/{GaAs} hetero-epitaxial interface
    using geometric phase method by high-resolution electron microscopy}},
  year = {2011},
  volume = {65},
  number = {3},
  month = feb,
  pages = {456--459},
  issn = {0167577X},
  doi = {10.1016/j.matlet.2010.10.054},


  journal = {Materials Letters},
  keywords = {geometric phase analysis}
}

@ARTICLE{HEGEDUS2005,
  author = {HEGEDUS, S and MCCANDLESS, B},
  title = {{CdTe contacts for CdTe/CdS solar cells: effect of Cu thickness,
    surface preparation and recontacting on device performance and stability}},
  year = {2005},
  volume = {88},
  number = {1},
  month = jun,
  pages = {75--95},
  issn = {09270248},
  doi = {10.1016/j.solmat.2004.10.010},

  annote = { From Duplicate 1 ( CdTe contacts for CdTe/CdS solar cells: effect
    of Cu thickness, surface preparation and recontacting on device performance
    and stability - HEGEDUS, S; MCCANDLESS, B )


     From Duplicate 2 ( CdTe contacts for CdTe/CdS solar cells: effect
    of Cu thickness, surface preparation and recontacting on device performance
    and stability - HEGEDUS, S; MCCANDLESS, B )






     },

  journal = {Solar Energy Materials and Solar Cells},
  keywords = {- see front matter,0927-0248,1 302 831 6226,1 302 831 6253,all rights
    reserved,back contact,cadmium telluride,current voltage analysis,e-mail
    address,edu,fax,hegedus,r 2004 elsevier b,s,solar cells,ssh,stability,tel,udel,v,\~{a}
    corresponding author}
}

@ARTICLE{Helfrich1973,
  author = {Helfrich, W},
  title = {{Elastic properties of lipid bilayers: theory and possible experiments}},
  year = {1973},
  volume = {28},
  number = {11},
  pages = {693--703},
  address = {GERMANY, WEST},
  annote = {LR: 20060417; JID: 7801145; 0 (Lipids); 0 (Membranes, Artificial);
    ppublish},
  isbn = {0341-0471},
  journal = {Zeitschrift fur Naturforschung.Teil C: Biochemie, Biophysik, Biologie,
    Virologie},
  keywords = {Elasticity,Lipids,Magnetics,Mathematics,Membranes, Artificial}
}

@ARTICLE{Henry2005,
  author = {Henry, C R},
  title = {{Morphology of supported nanoparticles}},
  year = {2005},
  volume = {80},
  number = {3-4},
  pages = {92--116},

  annote = {An short review of the shape of supported nanoparticles is presented.
    In the first part of this review the basic theoretical concepts governing
    the shape of crystals are given. The validity of the concepts of
    equilibrium shape for crystals with nanometer dimensions is discussed
    as well as the influence of the support. The effect of the growth
    kinetics on the particle shape is also discussed. In the second part,
    several examples of metal (Au and Pd) nanoparticles supported on
    MgO, mica and graphite substrates are given to demonstrate the utility
    of the main experimental techniques (TEM, STM, AFM, GISAXS) used
    to observe the morphology of nanocrystals. NO From Ontario Scholars
    Portal (OXM04960)},
  isbn = {0079-6816},
  journal = {Progress in Surface Science},
  keywords = {Equilibrium shape,Morphology,Nanoparticles,Size effects},
  publisher = {Elsevier Science}
}

@ARTICLE{Hinckley1990,
  author = {Hinckley, J. and Singh, J.},
  title = {{Influence of substrate composition and crystallographic orientation
    on the band structure of pseudomorphic Si-Ge alloy films}},
  year = {1990},
  volume = {42},
  number = {6},
  month = aug,
  pages = {3546--3566},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.42.3546},

  journal = {Physical Review B}
}

@ARTICLE{Hoffmann1928,
  author = {Hoffmann, Erich},
  title = {{\"{U}bersicht \"{u}ber die bekanntge-wordenen Leicheninfektionen
    mit Syphilis}},
  year = {1928},
  volume = {155},
  number = {1},
  month = apr,
  pages = {119--119},
  issn = {0340-3696},
  doi = {10.1007/BF01942943},

  journal = {Archiv f\"{u}r Dermatologie und Syphilis}
}

@ARTICLE{Hofmann2008,
  author = {Hofmann, Marc and Kambor, S and Schmidt, C and Grambole, D and Rentsch,
    J and Glunz, S. W. and Preu, R.},
  title = {{PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation
    Layer System for Crystalline Silicon Solar Cells}},
  year = {2008},
  volume = {2008},
  pages = {1--11},
  issn = {1687-563X},
  doi = {10.1155/2008/485467},

  abstract = {A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer
    system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented
    for silicon solar cell rear side passivation. Surface recombination
    velocities below 60 cm/s (after firing) and below 30 cm/s (after
    forming gas anneal) were achieved. Solar cell precursors without
    front and rear metallisation showed implied open-circuit voltages
    Voc values extracted from quasi-steady-state photoconductance (QSSPC)
    measurements above 680 mV. Fully finished solar cells with up to
    20.0\% energy conversion efficiency are presented. A fit of the cell's
    internal quantum efficiency using software tool PC1D and a comparison
    to a full-area aluminium-back surface field (Al-BSF) and thermal
    SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF.
    A separation of recombination at the metallised and the passivated
    area at the solar cell's rear is presented using the equations of
    Fischer and Kray. Nuclear reaction analysis (NRA) has been used to
    evaluate the hydrogen depth profile of the passivation layer system
    at different stages.},

  institution = {Hindawi - Academic Publisher for Open Access journals [http://www.hindawi.com/OAI-PMH/OAI.aspx]
    (United States)},
  journal = {Advances in OptoElectronics},
  publisher = {Hindawi Publishing Corporation}
}

@ARTICLE{Holt1969,
  author = {Holt, D. B.},
  title = {{Antiphase boundaries in semiconducting compounds}},
  year = {1969},
  volume = {30},
  number = {6},
  month = jun,
  pages = {1297--1308},
  issn = {00223697},
  doi = {10.1016/0022-3697(69)90191-7},


  journal = {Journal of Physics and Chemistry of Solids}
}

@ARTICLE{Holt1969a,
  author = {Holt, D. B.},
  title = {{Antiphase boundaries in semiconducting compounds}},
  year = {1969},
  volume = {30},
  number = {6},
  month = jun,
  pages = {1297--1308},
  issn = {00223697},
  doi = {10.1016/0022-3697(69)90191-7},


  journal = {Journal of Physics and Chemistry of Solids}
}

@BOOK{Holt2007b,
  author = {Holt, D. B. and Yacobi, B. G.},
  title = {{Extended Defects in Semiconductors: Electronic Properties, Device
    Effects and Structures}},
  year = {2007},
  publisher = {Cambridge University Press}
}

@PHDTHESIS{Holt2003,
  author = {Holt, Jason Knowles},
  title = {{Hot-Wire Chemical Vapor Deposition of Silicon and Silicon Nitride
    for Photovoltaics: Experiments, Simulations, and Applications}},
  year = {2003},

  school = {California Institute of Technology},
  volume = {2003}
}

@ARTICLE{HORNSTRA1959,
  author = {Hornstra, J.},
  title = {{Models of grain boundaries in the diamond lattice I. Tilt about
    }},
  year = {1959},
  volume = {25},
  number = {1-6},
  pages = {409--422},
  issn = {00318914},
  doi = {10.1016/S0031-8914(59)94454-4},


  journal = {Physica}
}

@ARTICLE{HORNSTRA1959a,
  author = {HORNSTRA, J},
  title = {{Models of grain boundaries in the diamond lattice I. Tilt about
    }},
  year = {1959},
  volume = {25},
  number = {1-6},
  pages = {409--422},
  issn = {00318914},
  doi = {10.1016/S0031-8914(59)94454-4},


  journal = {Physica}
}

@ARTICLE{Vajargah2011b,
  author = {{Hosseini Vajargah}, S. and Ghanad-Tavakoli, S. and Preston, J. S.
    and Botton, G. A. and Kleiman, R. N.},
  title = {{Lattice-registered growth of GaSb on Si (211) with molecular beam
    epitaxy}},
  year = {2012},
  volume = {112},
  number = {9},
  pages = {093103},
  issn = {00218979},
  doi = {10.1063/1.4761970},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Huang2008,
  author = {Huang, S. H. and Balakrishnan, G. and Khoshakhlagh, a. and Dawson,
    L. R. and Huffaker, D. L.},
  title = {{Simultaneous interfacial misfit array formation and antiphase domain
    suppression on miscut silicon substrate}},
  year = {2008},
  volume = {93},
  number = {7},
  pages = {071102},
  issn = {00036951},
  doi = {10.1063/1.2970997},


  journal = {Applied Physics Letters}
}

@ARTICLE{Huang2008a,
  author = {Huang, S. H. and Balakrishnan, G. and Khoshakhlagh, a. and Dawson,
    L. R. and Huffaker, D. L.},
  title = {{Simultaneous interfacial misfit array formation and antiphase domain
    suppression on miscut silicon substrate}},
  year = {2008},
  volume = {93},
  number = {7},
  pages = {071102},
  issn = {00036951},
  doi = {10.1063/1.2970997},


  journal = {Applied Physics Letters}
}

@ARTICLE{Huang2009,
  author = {Huang, Xiaohua and Neretina, S and El-Sayed, Mostafa},
  title = {{Gold Nanorods: From Synthesis and Properties to Biological and Biomedical
    Applications}},
  year = {2009},
  number = {21},
  pages = {1--31},
  journal = {Advanced Materials}
}

@ARTICLE{Humphrey2009,
  author = {Humphrey, D S and Cabailh, G and Pang, C L and Muryn, C A and Cavill,
    S A and Marchetto, H and Potenza, A and Dhesi, S S and Thornton,
    G},
  title = {{Self-assembled metallic nanowires on a dielectric support: Pd on
    rutile TiO2(110)}},
  year = {2009},
  volume = {9},
  number = {1},
  month = jan,
  pages = {155--159},
  address = {London Centre for Nanotechnology and Department of Chemistry, University
    College London, London WC1H 0AJ, United Kingdom.},
  annote = {Palladium nanoparticles supported on rutile TiO(2)(110)-1 x 1 have
    been studied using the complementary techniques of scanning tunneling
    microscopy and X-ray photoemission electron microscopy. Two distinct
    types of palladium nanoparticles are observed, namely long nanowires
    up to 1000 nm long, and smaller dotlike features with diameters ranging
    from 80-160 nm. X-ray photoemission electron microscopy reveals that
    the nanoparticles are composed of metallic palladium, separated by
    the bare TiO(2)(110) surface.},
  isbn = {1530-6984},
  journal = {Nano letters}
}

@ARTICLE{HUNGER1992,
  author = {HUNGER, E and PIETSCH, H and PETZOLDT, S and MATTHIAS, E},
  title = {{Multishot ablation of polymer and metal films at 248 nm}},
  year = {1992},
  volume = {54},
  month = jan,
  pages = {227--231},
  issn = {01694332},
  doi = {10.1016/0169-4332(92)90048-3},


  journal = {Applied Surface Science}
}

@ARTICLE{Hwang2013,
  author = {Hwang, Jeonghyun and Kim, Moonkyung and Campbell, Dorr and Alsalman,
    Hussain a and Kwak, Joon Young and Shivaraman, Shriram and Woll,
    Arthur R and Singh, Arunima K and Hennig, Richard G and Gorantla,
    Sandeep and R\"{u}mmeli, Mark H and Spencer, Michael G},
  title = {{van der Waals epitaxial growth of graphene on sapphire by chemical
    vapor deposition without a metal catalyst.}},
  year = {2013},
  volume = {7},
  number = {1},
  month = jan,
  pages = {385--95},
  issn = {1936-086X},
  doi = {10.1021/nn305486x},

  abstract = {van der Waals epitaxial growth of graphene on c-plane (0001) sapphire
    by CVD without a metal catalyst is presented. The effects of CH(4)
    partial pressure, growth temperature, and H(2)/CH(4) ratio were investigated
    and growth conditions optimized. The formation of monolayer graphene
    was shown by Raman spectroscopy, optical transmission, grazing incidence
    X-ray diffraction (GIXRD), and low voltage transmission electron
    microscopy (LVTEM). Electrical analysis revealed that a room temperature
    Hall mobility above 2000 cm(2)/V·s was achieved, and the mobility
    and carrier type were correlated to growth conditions. Both GIXRD
    and LVTEM studies confirm a dominant crystal orientation (principally
    graphene [10-10] || sapphire [11-20]) for about 80-90\% of the material
    concomitant with epitaxial growth. The initial phase of the nucleation
    and the lateral growth from the nucleation seeds were observed using
    atomic force microscopy. The initial nuclei density was \~{}24 $\mu$m(-2),
    and a lateral growth rate of \~{}82 nm/min was determined. Density
    functional theory calculations reveal that the binding between graphene
    and sapphire is dominated by weak dispersion interactions and indicate
    that the epitaxial relation as observed by GIXRD is due to preferential
    binding of small molecules on sapphire during early stages of graphene
    formation.},

  journal = {ACS nano},
  keywords = {atom thick honey-,carbon atoms with extraordinary,comb-shaped 2d sheet
    of,cvd,epitaxy,graphene,raman,raphene is a one,sapphire,sp 2 -bonded,van
    der waals},
  pmid = {23244231}
}

@PHDTHESIS{Hylton,
  author = {Hylton, J.D.},
  title = {{Light coupling and light trapping in alkaline etched multicrystalline
    silicon wafers for solar cells}},

  booktitle = {igitur-archive.library.uu.nl},

  publisher = {Utrecht University}
}

@ARTICLE{Iddir2007,
  author = {Iddir, Hakim and Komanicky, Vladimir and Oǧut, Serdar and You, Hoydoo
    and Zapol, Peter},
  title = {{Shape of Platinum Nanoparticles Supported on SrTiO3: Experiment
    and Theory}},
  year = {2007},
  volume = {111},
  number = {40},
  month = jan,
  pages = {14782--14789},
  doi = {10.1021/jp073041r},
  annote = {doi: 10.1021/jp073041r},
  journal = {The Journal of Physical Chemistry C}
}

@ARTICLE{Ionescu2002,
  author = {Ionescu, Andrei and Allouche, Alain and Aycard, Jean-Pierre and Rajzmann,
    Michel and Hutschka, Fran\c{c}ois},
  title = {{Study of $\gamma$-Alumina Surface Reactivity: Adsorption of Water
    and Hydrogen Sulfide on Octahedral Aluminum Sites}},
  year = {2002},
  volume = {106},
  number = {36},
  month = sep,
  pages = {9359--9366},
  issn = {1520-6106},
  doi = {10.1021/jp020145n},

  journal = {The Journal of Physical Chemistry B}
}

@INPROCEEDINGS{Irikawa2009,
  author = {Irikawa, Junpei},
  title = {{OPTIMIZATION OF CONTACT HOLE FORMATION PROCESS BY REACTIVE {IO}N
    ETCHING FOR CUBIC SILICON CARBIDE / SILICON HETEROJUNCTION SOLAR
    CELLS WITH HYDROGENATED}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {1128},

  keywords = {c-si,passivation,point contact}
}

@ARTICLE{Irissou2003,
  author = {Irissou, Eric and {Le Drogoff}, Boris and Chaker, Mohammed and Guay,
    Daniel},
  title = {{Influence of the expansion dynamics of laser-produced gold plasmas
    on thin film structure grown in various atmospheres}},
  year = {2003},
  volume = {94},
  number = {8},
  pages = {4796},
  issn = {00218979},
  doi = {10.1063/1.1607511},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Irissou2003a,
  author = {Irissou, Eric and {Le Drogoff}, Boris and Chaker, Mohammed and Guay,
    Daniel},
  title = {{Influence of the expansion dynamics of laser-produced gold plasmas
    on thin film structure grown in various atmospheres}},
  year = {2003},
  volume = {94},
  number = {8},
  pages = {4796},
  issn = {00218979},
  doi = {10.1063/1.1607511},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Irissou2002,
  author = {Irissou, Eric and {Le Drogoff}, Boris and Chaker, Mohamed and Guay,
    Daniel},
  title = {{Correlation between plasma expansion dynamics and gold-thin film
    structure during pulsed-laser deposition}},
  year = {2002},
  volume = {80},
  number = {10},
  pages = {1716},
  issn = {00036951},
  doi = {10.1063/1.1458534},


  journal = {Applied Physics Letters}
}

@BOOK{Isenberg1992,
  author = {Isenberg, Cyril},
  title = {{The Science of Soap Films and Soap Bubbles}},
  year = {1992},
  volume = {New editio},
  publisher = {Dover Publications},
  isbn = {0486269604},
  pages = {220},

  address = {Mineola, N.Y.},
  annote = {id: 1; Binding: Paperback}
}

@ARTICLE{Iyer1989,
  author = {Iyer, S. and Morkoç, H. and Zabel, H. and Otsuka, N.},
  title = {{Molecular Beam Epitaxy of Galium Arsenide on Silicon}},
  year = {1989},
  volume = {15},
  number = {1},
  pages = {1--50},
  annote = {Scanned this one myself, so quality not so good. This is an earlier
    publication with very much the same content to Fang's paper in 1990,
    but there are some discrepancies in the text. Some terms were reversed,
    and this one is the correct one.},

  journal = {Comments on Condensed Matter Physics}
}

@ARTICLE{Julicher1996,
  author = {J\"{u}licher, Frank},
  title = {{The Morphology of Vesicles of Higher Topological Genus: Conformal
    Degeneracy and Conformal Modes}},
  year = {1996},
  volume = {6},
  number = {12},
  pages = {1797--1824},
  doi = {10.1051/jp2:1996161},
  annote = {ID: 10.1051jp21996161; JF: Journal de Physique II; M3: 10.1051/jp2:1996161},
  journal = {Journal de Physique II}
}

@ARTICLE{Jackson2004,
  author = {Jackson, J B and Halas, N J and Kinsey, James L},
  title = {{Surface-Enhanced Raman Scattering on Tunable Plasmonic Nanoparticle
    Substrates}},
  year = {2004},
  volume = {101},
  number = {52},
  pages = {17930--17935},

  annote = {Au and Ag nanoshells are investigated as substrates for surface-enhanced
    Raman scattering (SERS). We find that SERS enhancements on nanoshell
    films are dramatically different from those observed on colloidal
    aggregates, specifically that the Raman enhancement follows the plasmon
    resonance of the individual nanoparticles. Comparative finite difference
    time domain calculations of fields at the surface of smooth and roughened
    nanoshells reveal that surface roughness contributes only slightly
    to the total enhancement. SERS enhancements as large as 2.5× 1010
    on Ag nanoshell films for the nonresonant molecule p-mercaptoaniline
    are measured.},
  isbn = {00278424},
  journal = {Proceedings of the National Academy of Sciences of the United States
    of America},
  publisher = {National Academy of Sciences}
}

@ARTICLE{Jaeger1981,
  author = {Jaeger, H. and Seipp, E.},
  title = {{Transition resistances of ohmic contacts to p-type cdte and their
    time-dependent variation}},
  year = {1981},
  volume = {10},
  number = {3},
  month = may,
  pages = {605--618},
  issn = {0361-5235},
  doi = {10.1007/BF02654594},
  annote = { From Duplicate 2 ( Transition resistances of ohmic contacts to p-type
    cdte and their time-dependent variation - Jaeger, H.; Seipp, E. )


     From Duplicate 1 ( Transition resistances of ohmic contacts to p-type
    cdte and their time-dependent variation - Jaeger, H.; Seipp, E. )






     },

  journal = {Journal of Electronic Materials},
  keywords = {semiconductor}
}

@ARTICLE{Jain2007,
  author = {Jain, Prashant K and Huang, Wenyu and El-Sayed, Mostafa},
  title = {{On the Universal Scaling Behavior of the Distance Decay of Plasmon
    Coupling in Metal Nanoparticle Pairs: A Plasmon Ruler Equation}},
  year = {2007},
  volume = {7},
  number = {7},
  month = jan,
  pages = {2080--2088},
  doi = {10.1021/nl071008a},
  annote = {doi: 10.1021/nl071008a; M3: doi: 10.1021/nl071008a},
  isbn = {1530-6984},
  journal = {Nano Letters},
  publisher = {American Chemical Society}
}

@ARTICLE{Jalkanen2008,
  author = {Jalkanen, J and Trushin, O and Granato, E and Ying, S C and Ala-Nissila,
    T},
  title = {{Equilibrium shape and size of supported heteroepitaxial nanoislands}},
  year = {2008},
  volume = {66},
  number = {2},
  month = jan,
  pages = {175--183},
  doi = {10.1140/epjb/e2008-00410-8},
  annote = {Abstract We study the equilibrium shape, shape transitions and optimal
    size of strained heteroepitaxial nanoislands with a two-dimensional
    atomistic model using simply adjustable interatomic pair potentials.
    We map out the global phase diagram as a function of substrate-adsorbate
    misfit and interaction. This phase diagram reveals all the phases
    corresponding to different well-known growth modes. In particular,
    for large enough misfits and attractive substrate there is a Stranski-Krastanow
    regime, where nano-sized islands grow on top of wetting films. We
    analyze the various terms contributing to the total island energy
    in detail, and show how the competition between them leads to the
    optimal shape and size of the islands. Finally, we also develop an
    analytic interpolation formula for the various contributions to the
    total energy of strained nanoislands.},
  journal = {The European Physical Journal B - Condensed Matter and Complex Systems}
}

@ARTICLE{Jamison1989,
  author = {Jamison, K. D. and Bensaoula, a. and Ignatiev, a. and Huang, C. F.
    and Chan, W. S.},
  title = {{Epitaxial growth of InSb (111) on sapphire (0001)}},
  year = {1989},
  volume = {54},
  number = {19},
  pages = {1916},
  issn = {00036951},
  doi = {10.1063/1.101240},


  journal = {Applied Physics Letters}
}

@ARTICLE{Jana2001,
  author = {Jana, N R and Gearheart, L and Murphy, C J},
  title = {{Seed-Mediated Growth Approach for Shape-Controlled Synthesis of
    Spheroidal and Rod-like Gold Nanoparticles Using a Surfactant Template}},
  year = {2001},
  volume = {13},
  number = {18},
  pages = {1389--1393},
  doi = {10.1002/1521-4095(200109)13:18},

  address = {Department of Chemistry and Biochemistry, University of South Carolina,
    Columbia, SC 29208 (USA)},
  isbn = {1521-4095},
  journal = {Advanced Materials}
}

@ARTICLE{Jana2001a,
  author = {Jana, Nikhil R and Gearheart, Latha and Murphy, Catherine J},
  title = {{Evidence for Seed-Mediated Nucleation in the Chemical Reduction
    of Gold Salts to Gold Nanoparticles}},
  year = {2001},
  volume = {13},
  number = {7},
  month = jan,
  pages = {2313--2322},
  doi = {10.1021/cm000662n},
  annote = {doi: 10.1021/cm000662n; M3: doi: 10.1021/cm000662n},
  isbn = {0897-4756},
  journal = {Chemistry of Materials},
  publisher = {American Chemical Society}
}

@ARTICLE{Jana2001b,
  author = {Jana, Nikhil R and Gearheart, Latha and Murphy, Catherine J},
  title = {{Wet Chemical Synthesis of High Aspect Ratio Cylindrical Gold Nanorods}},
  year = {2001},
  volume = {105},
  number = {19},
  month = jan,
  pages = {4065--4067},
  doi = {10.1021/jp0107964},
  annote = {doi: 10.1021/jp0107964; M3: doi: 10.1021/jp0107964},
  isbn = {1520-6106},
  journal = {The Journal of Physical Chemistry B},
  publisher = {American Chemical Society}
}

@ARTICLE{Jia1999,
  author = {Jia, H},
  title = {{Effect of helium partial pressure on {DC}-magnetron sputtering of
    Co-Cr films}},
  year = {1999},
  volume = {193},
  number = {1-3},
  month = mar,
  pages = {124--127},
  issn = {03048853},
  doi = {10.1016/S0304-8853(98)00415-6},


  journal = {Journal of Magnetism and Magnetic Materials},
  keywords = {helium,ion bombardment,longitudinal magnetic thin films,magnetron
    sputtering,uniformity}
}

@ARTICLE{Jia1999a,
  author = {Jia, H},
  title = {{Effect of helium partial pressure on {DC}-magnetron sputtering of
    Co-Cr films}},
  year = {1999},
  volume = {193},
  number = {1-3},
  month = mar,
  pages = {124--127},
  issn = {03048853},
  doi = {10.1016/S0304-8853(98)00415-6},


  journal = {Journal of Magnetism and Magnetic Materials},
  keywords = {helium,ion bombardment,longitudinal magnetic thin films,magnetron
    sputtering,uniformity}
}

@ARTICLE{Jin2001,
  author = {Jin, Rongchao and Cao, YunWei and Mirkin, Chad A and Kelly, K L and
    Schatz, George C and Zheng, J G},
  title = {{Photoinduced Conversion of Silver Nanospheres to Nanoprisms}},
  year = {2001},
  volume = {294},
  number = {5548},
  pages = {1901--1903},

  annote = {A photoinduced method for converting large quantities of silver nanospheres
    into triangular nanoprisms is reported. The photo-process has been
    characterized by time-dependent ultraviolet-visible spectroscopy
    and transmission electron microscopy, allowing for the observation
    of several key intermediates in and characteristics of the conversion
    process. This light-driven process results in a colloid with distinctive
    optical properties that directly relate to the nanoprism shape of
    the particles. Theoretical calculations coupled with experimental
    observations allow for the assignment of the nanoprism plasmon bands
    and for the first identification of two distinct quadrupole plasmon
    resonances for a nanoparticle. Unlike the spherical particles they
    are derived from that Rayleigh light-scatter in the blue, these nanoprisms
    exhibit scattering in the red, which could be useful in developing
    multicolor diagnostic labels on the basis not only of nanoparticle
    composition and size but also of shape.},
  isbn = {00368075},
  journal = {Science},
  publisher = {American Association for the Advancement of Science}
}

@ARTICLE{Johnson2011,
  author = {Johnson, S.M. and James, J.B. and Ahlgren, W.L. and Hamilton, W.J.
    and Ray, M. and TOMPA, G.S.},
  title = {{Heteroepitaxial HgCdTe/CdZnTe/{GaAs}/Si Materials for Infrared Focal
    Plane Arrays}},
  year = {1990},
  editor = {Katz, A. and Biefld, R. M. and Gunshor, R. L. and Malik, R. J.},
  volume = {216},
  month = feb,
  pages = {141},
  issn = {1946-4274},
  doi = {10.1557/PROC-216-141},

  address = {Pittsburg, PA},

  journal = {MRS Proceedings},
  publisher = {Materials Research Society}
}

@ARTICLE{Johnson1991,
  author = {Johnson, S. M. and James, J. B. and Ahlgren, W. L. and Hamilton,
    W. J. and Ray, M.},
  title = {{Comment on ‘‘Molecular beam epitaxy and characterization of CdTe(211)
    and CdTe(133) films on {GaAs}(211)B substrates’’}},
  year = {1991},
  volume = {59},
  number = {16},
  pages = {2055},
  issn = {00036951},
  doi = {10.1063/1.106130},


  journal = {Applied Physics Letters}
}

@PHDTHESIS{Jooß2002,
  author = {Joo\ss, Wolfgang},
  title = {{Multicrystalline and Back Contact Buried Contact Silicon Solar Cells}},
  year = {2002},
  booktitle = {Processing},

}

@ARTICLE{Jordan1969,
  author = {Jordan, a. S. and Zupp, R. R.},
  title = {{Calculation of the p-T Diagrams of CdTe}},
  year = {1969},
  volume = {116},
  number = {9},
  pages = {1285},
  issn = {00134651},
  doi = {10.1149/1.2412301},

  journal = {Journal of The Electrochemical Society}
}

@ARTICLE{Jordan1969a,
  author = {Jordan, a. S. and Zupp, R. R.},
  title = {{Calculation of the p-T Diagrams of CdTe}},
  year = {1969},
  volume = {116},
  number = {9},
  pages = {1285},
  issn = {00134651},
  doi = {10.1149/1.2412301},

  journal = {Journal of The Electrochemical Society}
}

@ARTICLE{Kaito2008,
  author = {Kaito, Chihiro and Kinuta, Yasuhiko and Suzuki, Hitoshi and Adachi,
    Syunsuke and Kumamoto, Akihito and Saito, Yoshio and Kimura, Yuki},
  title = {{Morphological {Altera}tion and Structure of ZnO Particles Produced
    in Electric Field}},
  year = {2008},
  volume = {77},
  number = {9},
  month = sep,
  pages = {094708},
  issn = {0031-9015},
  doi = {10.1143/JPSJ.77.094708},


  journal = {Journal of the Physical Society of Japan},
  keywords = {094708,10,1143,77,crystal structure,doi,jpsj,nanostructures,zinc compounds}
}

@ARTICLE{Kaito2008a,
  author = {Kaito, Chihiro and Kinuta, Yasuhiko and Suzuki, Hitoshi and Adachi,
    Syunsuke and Kumamoto, Akihito and Saito, Yoshio and Kimura, Yuki},
  title = {{Morphological {Altera}tion and Structure of ZnO Particles Produced
    in Electric Field}},
  year = {2008},
  volume = {77},
  number = {9},
  month = sep,
  pages = {094708},
  issn = {0031-9015},
  doi = {10.1143/JPSJ.77.094708},


  journal = {Journal of the Physical Society of Japan},
  keywords = {094708,10,1143,77,crystal structure,doi,jpsj,nanostructures,zinc compounds}
}

@ARTICLE{Kamat2007,
  author = {Kamat, P.V.},
  title = {{Meeting the Clean Energy Demand: Nanostructure Architectures for
    Solar Energy Conversion}},
  year = {2007},
  volume = {111},
  number = {7},
  month = feb,
  pages = {2834--2860},
  issn = {1932-7447},
  doi = {10.1021/jp066952u},

  journal = {Journal of Physical Chemistry C}
}

@ARTICLE{Kamohara2006,
  author = {Kamohara, Toshihiro and Akiyama, Morito and Ueno, Naohiro and Sakamoto,
    Michiru and Kano, Kazuhiko and Teshigahara, Akihiko and Kawahara,
    Nobuaki and Kuwano, Noriyuki},
  title = {{Influence of sputtering pressure on polarity distribution of aluminum
    nitride thin films}},
  year = {2006},
  volume = {89},
  number = {24},
  pages = {243507},
  issn = {00036951},
  doi = {10.1063/1.2405849},


  journal = {Applied Physics Letters}
}

@ARTICLE{Kamohara2006a,
  author = {Kamohara, Toshihiro and Akiyama, Morito and Ueno, Naohiro and Sakamoto,
    Michiru and Kano, Kazuhiko and Teshigahara, Akihiko and Kawahara,
    Nobuaki and Kuwano, Noriyuki},
  title = {{Influence of sputtering pressure on polarity distribution of aluminum
    nitride thin films}},
  year = {2006},
  volume = {89},
  number = {24},
  pages = {243507},
  issn = {00036951},
  doi = {10.1063/1.2405849},


  journal = {Applied Physics Letters}
}

@ARTICLE{Kang2002,
  author = {Kang, Jinmo and You, JaeSung and Kang, ChoonSik and Pak, James Jungho
    and Kim, Donghwan},
  title = {{Investigation of Cu metallization for Si solar cells}},
  year = {2002},
  volume = {74},
  number = {1-4},
  month = oct,
  pages = {91--96},
  issn = {09270248},
  doi = {10.1016/S0927-0248(02)00052-1},


  journal = {Solar Energy Materials and Solar Cells},
  keywords = {contact resistance,cu metallization,etch pits,high efficiency,silicon,solar
    cells}
}

@ARTICLE{Kavanagh2010,
  author = {Kavanagh, Karen L},
  title = {{Misfit dislocations in nanowire heterostructures}},
  year = {2010},
  volume = {25},
  number = {2},
  month = feb,
  pages = {024006},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/25/2/024006},

  annote = {I have notes!},

  journal = {Semiconductor Science and Technology}
}

@ARTICLE{Kavanagh2010a,
  author = {Kavanagh, Karen L},
  title = {{Misfit dislocations in nanowire heterostructures}},
  year = {2010},
  volume = {25},
  number = {2},
  month = feb,
  pages = {024006},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/25/2/024006},

  journal = {Semiconductor Science and Technology}
}

@ARTICLE{Kawabe1989,
  author = {Kawabe, M. and Sugaya, T.},
  title = {{Anisotropic lateral growth of {GaAs} by molecular beam epitaxy}},
  year = {1989},
  volume = {28},
  number = {7},
  pages = {L1077--L1079},
  issn = {0021-4922},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Kawabe1989a,
  author = {Kawabe, M. and Sugaya, T.},
  title = {{Anisotropic lateral growth of {GaAs} by molecular beam epitaxy}},
  year = {1989},
  volume = {28},
  number = {7},
  pages = {L1077--L1079},
  issn = {0021-4922},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Kawabe1987,
  author = {Kawabe, Mitsuo and Ueda, Toshio},
  title = {{Self-Annihilation of Antiphase Boundary in {GaAs} on Si(100) Grown
    by Molecular Beam Epitaxy}},
  year = {1987},
  volume = {26},
  number = {Part 2, No. 6},
  month = jun,
  pages = {L944--L946},
  issn = {0021-4922},
  doi = {10.1143/JJAP.26.L944},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Kawabe1987a,
  author = {Kawabe, Mitsuo and Ueda, Toshio},
  title = {{Self-Annihilation of Antiphase Boundary in {GaAs} on Si(100) Grown
    by Molecular Beam Epitaxy}},
  year = {1987},
  volume = {26},
  number = {Part 2, No. 6},
  month = jun,
  pages = {L944--L946},
  issn = {0021-4922},
  doi = {10.1143/JJAP.26.L944},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Kaya2007,
  author = {Kaya, H. and E., \c{C}adırlı and G\"{u}nd\"{u}z, M.},
  title = {{Dendritic growth in an aluminum-silicon alloy}},
  year = {2007},
  volume = {16},
  number = {1},
  pages = {12--21},
  doi = {10.1007/s11665-006-9002-2},


  journal = {J. Mater. Eng. Perform.},
  keywords = {al-si alloy,directional,growth,microstructures},
  publisher = {Springer}
}

@ARTICLE{Kelly2003,
  author = {Kelly, K.L. L and Coronado, Eduardo and Zhao, Lin Lin L.L. and Schatz,
    G.C. George C},
  title = {{The Optical Properties of Metal Nanoparticles: The Influence of
    Size, Shape, and Dielectric Environment}},
  year = {2003},
  volume = {107},
  number = {3},
  month = jan,
  pages = {668--677},
  issn = {1091-6490},
  doi = {10.1073/pnas.1009353108},
  abstract = {Histone methylation has an important role in transcriptional regulation.
    However, unlike H3K4 and H3K9 methylation, the role of H4K20 monomethylation
    (H4K20me-1) in transcriptional regulation remains unclear. Here,
    we show that Wnt3a specifically stimulates H4K20 monomethylation
    at the T cell factor (TCF)-binding element through the histone methylase
    SET8. Additionally, SET8 is crucial for activation of the Wnt reporter
    gene and target genes in both mammalian cells and zebrafish. Furthermore,
    SET8 interacts with lymphoid enhancing factor-1 (LEF1)/TCF4 directly,
    and this interaction is regulated by Wnt3a. Therefore, we conclude
    that SET8 is a Wnt signaling mediator and is recruited by LEF1/TCF4
    to regulate the transcription of Wnt-activated genes, possibly through
    H4K20 monomethylation at the target gene promoters. Our findings
    also indicate that H4K20me-1 is a marker for gene transcription activation,
    at least in canonical Wnt signaling.},
  annote = { From Duplicate 1 ( The optical properties of metal nanoparticles:
    the influence of size, shape, and dielectric environment - Kelly,
    K.L.; Coronado, E.; Zhao, L.L.; Schatz, G.C. )




     From Duplicate 2 ( The Optical Properties of Metal Nanoparticles:
    The Influence of Size, Shape, and Dielectric Environment - Kelly,
    K L; Coronado, Eduardo; Zhao, Lin Lin; Schatz, George C )

     doi: 10.1021/jp026731y; M3: doi: 10.1021/jp026731y


     },

  isbn = {1520-6106},
  journal = {The Journal of Physical Chemistry B},
  pmid = {21282610},
  publisher = {American Chemical Society}
}

@ARTICLE{Kern1995,
  author = {Kern, R and M\"{u}ller, P},
  title = {{Three-dimensional towards two-dimensional coherent epitaxy initiated
    by surfactants}},
  year = {1995},
  volume = {146},
  number = {1-4},
  month = jan,
  pages = {193--197},

  isbn = {0022-0248},
  journal = {Vapour Growth and Epitaxy 1994}
}

@ARTICLE{Kerr2002c,
  author = {Kerr, Mark J. and Cuevas, A. and Sinton, Ronald a.},
  title = {{Generalized analysis of quasi-steady-state and transient decay open
    circuit voltage measurements}},
  year = {2002},
  volume = {91},
  number = {1},
  pages = {399},
  issn = {00218979},
  doi = {10.1063/1.1416134},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Kim2004,
  author = {Kim, HC and Theodore, ND and Alford, TL},
  title = {{Comparison of texture evolution in Ag and Ag (Al) alloy thin films
    on amorphous SiO}},
  year = {2004},
  volume = {95},
  number = {9},
  pages = {5180},
  doi = {10.1063/1.1682685},


  journal = {J. Appl. Phys.}
}

@INPROCEEDINGS{smith2012_gaas,
  author = {Kim, J. J. and Smith, D. J. and Jacobs, R. N. and Almeida, L. A.
    and Jamie-Vasquez, M. and Nozaki, C. and Markunas, J. K. and Benson,
    J. D.},
  title = {{TEM Characterization of HgCdTe/CdTe Grown on {GaAs}(211)B Substrates}},
  booktitle = {2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials},
  year = {2012}
}

@ARTICLE{Kim2010a,
  author = {Kim, K.-C. and Kim, H. J. and Suh, S.-H. and Carmody, M. and Sivananthan,
    S. and Kim, J.-S.},
  title = {{Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on
    Si(211) Substrates}},
  year = {2010},
  volume = {39},
  number = {7},
  month = apr,
  pages = {863--867},
  issn = {0361-5235},
  doi = {10.1007/s11664-010-1220-6},

  journal = {Journal of Electronic Materials},
  keywords = {buffer layer,cdte,mocvd,si,thermal cleaning,thin film}
}

@ARTICLE{Kim2010,
  author = {Kim, Y.H. and Noh, Y.K. and Kim, M.D. and Oh, J.E. and Chung, K.S.},
  title = {{Transmission electron microscopy study of the initial growth stage
    of GaSb grown on Si (001) substrate by molecular beam epitaxy method}},
  year = {2010},
  volume = {518},
  number = {8},
  month = feb,
  pages = {2280--2284},
  issn = {00406090},
  doi = {10.1016/j.tsf.2009.09.120},


  journal = {Thin Solid Films},
  keywords = {transmission electron microscopy},
  publisher = {Elsevier B.V.}
}

@ARTICLE{Kim2010b,
  author = {Kim, Y.H. and Noh, Y.K. and Kim, M.D. and Oh, J.E. and Chung, K.S.},
  title = {{Transmission electron microscopy study of the initial growth stage
    of GaSb grown on Si (001) substrate by molecular beam epitaxy method}},
  year = {2010},
  volume = {518},
  number = {8},
  month = feb,
  pages = {2280--2284},
  issn = {00406090},
  doi = {10.1016/j.tsf.2009.09.120},


  journal = {Thin Solid Films},
  keywords = {transmission electron microscopy},
  publisher = {Elsevier B.V.}
}

@ARTICLE{Kim2006a,
  author = {Kim, Y. H. and Lee, J. Y. and Noh, Y. G. and Kim, M. D. and Cho,
    S. M. and Kwon, Y. J. and Oh, J. E.},
  title = {{Growth mode and structural characterization of GaSb on Si (001)
    substrate: A transmission electron microscopy study}},
  year = {2006},
  volume = {88},
  number = {24},
  pages = {241907},
  issn = {00036951},
  doi = {10.1063/1.2209714},


  journal = {Applied Physics Letters}
}

@ARTICLE{Kim2006,
  author = {Kim, Y. H. and Lee, J. Y. and Noh, Y. G. and Kim, M. D. and Kwon,
    Y. J. and Oh, J. E. and Gronsky, R.},
  title = {{Effect of two-step growth on the heteroepitaxial growth of InSb
    thin film on Si (001) substrate: A transmission electron microscopy
    study}},
  year = {2006},
  volume = {89},
  number = {3},
  pages = {031919},
  issn = {00036951},
  doi = {10.1063/1.2228028},


  journal = {Applied Physics Letters}
}

@ARTICLE{Kim2006b,
  author = {Kim, Y. H. and Lee, J. Y. and Noh, Y. G. and Kim, M. D. and Kwon,
    Y. J. and Oh, J. E. and Gronsky, R.},
  title = {{Effect of two-step growth on the heteroepitaxial growth of InSb
    thin film on Si (001) substrate: A transmission electron microscopy
    study}},
  year = {2006},
  volume = {89},
  number = {3},
  pages = {031919},
  issn = {00036951},
  doi = {10.1063/1.2228028},


  journal = {Applied Physics Letters}
}

@ARTICLE{Kingery1959,
  author = {Kingery, W. D.},
  title = {{Densification during Sintering in the Presence of a Liquid Phase.
    I. Theory}},
  year = {1959},
  volume = {30},
  number = {3},
  pages = {301},
  issn = {00218979},
  doi = {10.1063/1.1735155},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Kiyota2001,
  author = {Kiyota, Yukihiro and Inada, Taroh},
  title = {{Sticking coefficient of boron and phosphorus on silicon during vapor-phase
    doping}},
  year = {2001},
  volume = {19},
  number = {5},
  pages = {2441},
  issn = {07342101},
  doi = {10.1116/1.1387055},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{Kiyota2001a,
  author = {Kiyota, Yukihiro and Inada, Taroh},
  title = {{Sticking coefficient of boron and phosphorus on silicon during vapor-phase
    doping}},
  year = {2001},
  volume = {19},
  number = {5},
  pages = {2441},
  issn = {07342101},
  doi = {10.1116/1.1387055},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{Kluska2010,
  author = {Kluska, Sven and Granek, Filip and R\"{u}diger, Marc and Hermle,
    Martin and Glunz, S. W.},
  title = {{Modeling and optimization study of industrial n-type high-efficiency
    back-contact back-junction silicon solar cells}},
  year = {2010},
  volume = {94},
  number = {3},
  pages = {568--577},
  issn = {09270248},
  doi = {10.1016/j.solmat.2009.11.025},


  journal = {Sol. Energy Mater. Sol. Cells}
}

@ARTICLE{Knight2010,
  author = {Knight, Mark W and Fan, Jonathan and Capasso, Federico and Halas,
    Naomi J},
  title = {{Influence of excitation and collection geometry on the dark field
    spectra of individual plasmonic nanostructures.}},
  year = {2010},
  volume = {18},
  number = {3},
  month = feb,
  pages = {2579--87},
  issn = {1094-4087},

  abstract = {Dark field microspectroscopy is the primary method for the study of
    plasmon modes of individual metallic nanostructures. Light from a
    plasmonic nanostructure typically scatters with a strong angular
    and modal dependence, resulting in significant variations in the
    observed spectral response depending on excitation and collection
    angle and polarization of incident light. Here we examine how spectrally
    dependent radiation patterns arising from an individual plasmonic
    nanoparticle, positioned on a dielectric substrate, affect the detection
    of its plasmon modes. Careful consideration of excitation and collection
    geometry is of critical concern in quantitative studies of the optical
    response of these nanoparticle systems.},

  journal = {Optics express},
  pmid = {20174087}
}

@ARTICLE{Knight2009,
  author = {Knight, Mark W and Wu, Yanpeng and Lassiter, J Britt and Nordlander,
    Peter and Halas, Naomi J},
  title = {{Substrates matter: influence of an adjacent dielectric on an individual
    plasmonic nanoparticle.}},
  year = {2009},
  volume = {9},
  number = {5},
  month = may,
  pages = {2188--92},
  issn = {1530-6992},
  doi = {10.1021/nl900945q},

  abstract = {Studying the plasmonic properties of metallic nanoparticles at the
    individual nanostructure level is critical to our understanding of
    nanoscale metallic systems. Here we show how the presence of a nearby
    dielectric substrate modifies the energies of the plasmon modes of
    a metallic nanoparticle. The adjacent dielectric lifts the degeneracy
    of the dipole plasmon modes oriented parallel and perpendicular to
    the substrate, introducing a significant energy splitting that depends
    strongly on the permittivity of the substrate. This energy splitting
    can easily be misinterpreted as an anomalously broadened plasmon
    line shape for excitation of an individual nanoparticle with unpolarized
    light.},

  journal = {Nano letters},
  pmid = {19361166}
}

@ARTICLE{Koma1999,
  author = {Koma, Atsushi},
  title = {{Van der Waals epitaxy for highly lattice-mismatched systems}},
  year = {1999},
  volume = {201-202},
  month = may,
  pages = {236--241},
  issn = {00220248},
  doi = {10.1016/S0022-0248(98)01329-3},


  journal = {Journal of Crystal Growth},
  keywords = {lattice matching,molecular crystals,van der waals epitaxy}
}

@ARTICLE{Konkov1969a,
  author = {Kon'kov, V. L.},
  title = {{Hall effect in two-layer semiconductor specimens}},
  year = {1969},
  volume = {9},
  number = {2},
  pages = {108--109},
  issn = {0038-5697},
  doi = {10.1007/BF00818089},
  annote = { From Duplicate 1 ( Hall effect in two-layer semiconductor specimens
    - Kon'kov, V. L. )


     From Duplicate 2 ( Hall effect in two-layer semiconductor specimens
    - Kon'kov, V. L. )






     },

  journal = {Soviet Physics Journal}
}

@ARTICLE{Kontermann2009a,
  author = {Kontermann, S and Wolf, A. and Reinwand, D and Grohe, A. and Biro,
    D. and Preu, R.},
  title = {{Optimizing Annealing Steps for Crystalline Silicon Solar Cells with
    Screen Printed Front Side Metallization and an Oxide - Passivated
    Rear Surface with Local Contacts}},
  year = {2009},
  volume = {17},
  pages = {554--566},
  doi = {10.1002/pip},

  journal = {Prog. Photovoltaics},
  keywords = {post-metallization annealing,rear passivation,received 21 april 2009,screen
    print metallization,silicon solar cells}
}

@INPROCEEDINGS{Kopecek,
  author = {Kopecek, R. and Peter, K. and Fath, P. and Bucher, E. and Zahedi,
    C.},
  title = {{Epitaxial layers on low cost silicon substrates for industrial scale
    production}},
  booktitle = {17th EPVSC, Munich},


  keywords = {lpe -2,metallurgical grade -3,silicon -1}
}

@ARTICLE{Kosyachenko2009a,
  author = {Kosyachenko, L.a. and a.I. Savchuk and Grushko, E.V.},
  title = {{Dependence of efficiency of thin-film CdS/CdTe solar cell on parameters
    of absorber layer and barrier structure}},
  year = {2009},
  volume = {517},
  number = {7},
  month = feb,
  pages = {2386--2391},
  issn = {00406090},
  doi = {10.1016/j.tsf.2008.11.012},

  annote = { From Duplicate 1 ( Dependence of efficiency of thin-film CdS/CdTe
    solar cell on parameters of absorber layer and barrier structure
    - Kosyachenko, L.a.; Savchuk, a.I.; Grushko, E.V. )


     From Duplicate 2 ( Dependence of efficiency of thin-film CdS/CdTe
    solar cell on parameters of absorber layer and barrier structure
    - Kosyachenko, L.a.; Savchuk, a.I.; Grushko, E.V. )






     },

  journal = {Thin Solid Films},
  publisher = {Elsevier B.V.}
}

@ARTICLE{Kouichi1994,
  author = {Kouichi, T. and NlSHIKAWA, S.},
  title = {{Improvement of the Interface between Selectively Deposited Aluminum
    and Silicon by Annealing}},
  year = {1994},
  volume = {33},
  pages = {455--458},


  journal = {Jpn. J. Appi. Phys. Vol}
}

@ARTICLE{Kowalski2000,
  author = {Kowalski, B.J. and Orłowski, B.A. and Ghijsen, J},
  title = {{Oxide formation on the CdTe(111)A (1×1) surface}},
  year = {2000},
  volume = {166},
  number = {1-4},
  month = oct,
  pages = {237--241},
  issn = {01694332},
  doi = {10.1016/S0169-4332(00)00423-2},


  isbn = {4822843092},
  journal = {Applied Surface Science},
  keywords = {cadmium telluride,oxygen,photoelectron spectroscopy,semiconductors}
}

@ARTICLE{Kowalski2000a,
  author = {Kowalski, B.J. and Orłowski, B.A. and Ghijsen, J},
  title = {{Oxide formation on the CdTe(111)A (1×1) surface}},
  year = {2000},
  volume = {166},
  number = {1-4},
  month = oct,
  pages = {237--241},
  issn = {01694332},
  doi = {10.1016/S0169-4332(00)00423-2},


  isbn = {4822843092},
  journal = {Applied Surface Science},
  keywords = {cadmium telluride,oxygen,photoelectron spectroscopy,semiconductors}
}

@ARTICLE{Kroger1956,
  author = {Kr\"{o}ger, F. and Diemer, G. and Klasens, H.},
  title = {{Nature of an Ohmic Metal-Semiconductor Contact}},
  year = {1956},
  volume = {103},
  number = {2},
  month = jul,
  pages = {279--279},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.103.279},

  journal = {Physical Review}
}

@ARTICLE{Krause-Rehberg1998,
  author = {Krause-Rehberg, R. and Leipner, H.S. and Abgarjan, T and Polity,
    A},
  title = {{Review of defect investigations by means of positron annihilation
    in II-VI compound semiconductors}},
  year = {1998},
  volume = {66},
  number = {6},
  month = jun,
  pages = {599--614},
  issn = {0947-8396},
  doi = {10.1007/s003390050721},

  journal = {Applied Physics A: Materials Science \& Processing}
}

@ARTICLE{Kroemer1987,
  author = {Kroemer, Herbert},
  title = {{POLAR-ON-NONPOLAR EPITAXY}},
  year = {1987},
  volume = {81},
  pages = {193--204},

  journal = {Journal of Crystal Growth}
}

@ARTICLE{Kroemer1987a,
  author = {Kroemer, H.},
  title = {{Polar-on-nonpolar epitaxy}},
  year = {1987},
  volume = {81},
  number = {1-4},
  month = feb,
  pages = {193--204},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90391-5},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Kroemer1987b,
  author = {Kroemer, H.},
  title = {{Polar-on-nonpolar epitaxy}},
  year = {1987},
  volume = {81},
  number = {1-4},
  month = feb,
  pages = {193--204},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90391-5},


  journal = {Journal of Crystal Growth}
}

@PHDTHESIS{Kron2003,
  author = {Kron, Gregor},
  title = {{Ladungstr\"{a}gertransport in farbstoffsensibilisierten Solarzellen
    auf Basis von nanopor\"{o}sem TiO 2}},
  year = {2003},
  booktitle = {Elektrotechnik Und Informationstechnik},

  school = {Stuttgart}
}

@ARTICLE{Kubiak1985,
  author = {Kubiak, R. a. a.},
  title = {{Enhanced sticking coefficients and improved profile control using
    boron and antimony as coevaporated dopants in Si-MBE}},
  year = {1985},
  volume = {3},
  number = {2},
  month = mar,
  pages = {592},
  issn = {0734211X},
  doi = {10.1116/1.583142},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Kubiak1985a,
  author = {Kubiak, R. A. A.},
  title = {{Enhanced sticking coefficients and improved profile control using
    boron and antimony as coevaporated dopants in Si-MBE}},
  year = {1985},
  volume = {3},
  number = {2},
  month = mar,
  pages = {592},
  issn = {0734211X},
  doi = {10.1116/1.583142},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Kwapil2009,
  author = {Kwapil, Wolfram and Gundel, Paul and Schubert, Martin C. and Heinz,
    Friedemann D. and Warta, Wilhelm and Weber, Eicke R. and Goetzberger,
    Adolf and Martinez-Criado, Gema},
  title = {{Observation of metal precipitates at prebreakdown sites in multicrystalline
    silicon solar cells}},
  year = {2009},
  volume = {95},
  number = {23},
  pages = {232113},
  issn = {00036951},
  doi = {10.1063/1.3272682},


  journal = {Appl. Phys. Lett.}
}

@ARTICLE{Kyarad2004,
  author = {Kyarad, a. and Lengfellner, H.},
  title = {{Al-Si multilayers: A synthetic material with large thermoelectric
    anisotropy}},
  year = {2004},
  volume = {85},
  number = {23},
  pages = {5613},
  issn = {00036951},
  doi = {10.1063/1.1830680},


  journal = {Appl. Phys. Lett.}
}

@PHDTHESIS{Loffler,
  author = {L\"{o}ffler, J.},
  title = {{Transparent conductive oxides for thin-film silicon solar cells}},

  booktitle = {igitur-archive.library.uu.nl},

  publisher = {Utrecht University}
}

@ARTICLE{Laks1988,
  author = {Laks, DB and Neumark, GF and Hangleiter, A. and Pantelides, ST},
  title = {{Theory of Interband Auger Recombination in n-type Silicon}},
  year = {1988},
  volume = {61},
  number = {10},
  month = sep,
  pages = {1229--1232},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.61.1229},

  journal = {Phys. Rev. Lett.},
  publisher = {APS}
}

@ARTICLE{Lal2007,
  author = {Lal, Surbhi and Link, Stephan and Halas, Naomi J.},
  title = {{Nano-optics from sensing to waveguiding}},
  year = {2007},
  volume = {1},
  number = {11},
  month = nov,
  pages = {641--648},
  issn = {1749-4885},
  doi = {10.1038/nphoton.2007.223},

  journal = {Nature Photonics}
}

@ARTICLE{Lamarre2008,
  author = {Lamarre, Jean-Michel and Billard, Franck and Kerboua, Chahineze Harkati
    and Lequime, Michel and Roorda, Sjoerd and Martinu, Ludvik},
  title = {{Anisotropic nonlinear optical absorption of gold nanorods in a silica
    matrix}},
  year = {2008},
  volume = {281},
  number = {2},
  pages = {331--340},

  isbn = {0030-4018},
  journal = {Optics Communications},
  keywords = {42.65.−k,72.80.Tm,Anisotropic optical properties,Gold nanorods,Nanocomposite,Nonlinear
    optics}
}

@ARTICLE{Lambrecht1992,
  author = {Lambrecht, W. R. L. and Amador, C. and Segall, B.},
  title = {{"Wrong" bond interactions at inversion domain boundaries in GaAs}},
  year = {1992},
  volume = {68},
  number = {9},
  pages = {1363--1366},

  journal = {Physical Review Letters}
}

@ARTICLE{Lange1991,
  author = {Lange, M. D. and Sporken, R. and Mahavadi, K. K. and Faurie, J. P.
    and Nakamura, Y. and Otsuka, N.},
  title = {{Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133)
    films on {GaAs}(211)B substrates}},
  year = {1991},
  volume = {58},
  number = {18},
  pages = {1988},
  issn = {00036951},
  doi = {10.1063/1.105041},


  journal = {Applied Physics Letters}
}

@ARTICLE{Lange1991a,
  author = {Lange, M. D. and Sporken, R. and Mahavadi, K. K. and Faurie, J. P.
    and Nakamura, Y. and Otsuka, N.},
  title = {{Response to ‘‘Comment on ‘Molecular beam epitaxy and characterization
    of CdTe(211) and CdTe(133) films on {GaAs}(211)B substrates’ ’’}},
  year = {1991},
  volume = {59},
  number = {16},
  pages = {2055},
  issn = {00036951},
  doi = {10.1063/1.106131},


  journal = {Applied Physics Letters}
}

@ARTICLE{Langford2008,
  author = {Langford, R M and Rogers, M},
  title = {{In situ lift-out: steps to improve yield and a comparison with other
    FIB TEM sample preparation techniques.}},
  year = {2008},
  volume = {39},
  number = {8},
  month = dec,
  pages = {1325--30},
  issn = {0968-4328},
  doi = {10.1016/j.micron.2008.02.006},

  abstract = {Steps to improve the success yield of the in situ lift-out technique
    are presented. These include tapping the plinth of the system and
    monitoring the grounding current to check the lift-out needle is
    fixed to the material being removed. In addition, the relative success
    yields and the time to prepare a TEM lamella for the three main FIB
    methods are discussed and compared.},

  journal = {Micron (Oxford, England : 1993)},
  keywords = {Microscopy, Electron, Transmission,Microscopy, Electron, Transmission:
    methods},
  pmid = {18555690}
}

@ARTICLE{LaPierre1998a,
  author = {LaPierre, RR and Thompson, DA and Robinson, BJ},
  title = {{Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted
    epitaxy producing improved double-heterostructure laser performance}},
  year = {1998},
  volume = {13},
  pages = {637},


  journal = {Semiconductor science and technology},
  publisher = {IOP Publishing}
}

@ARTICLE{LaPierre1998b,
  author = {LaPierre, RR and Thompson, DA and Robinson, BJ},
  title = {{Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted
    epitaxy producing improved double-heterostructure laser performance}},
  year = {1998},
  volume = {13},
  pages = {637},


  journal = {Semiconductor science and technology},
  publisher = {IOP Publishing}
}

@ARTICLE{LaPierre1998,
  author = {LaPierre, R. R.},
  title = {{Evaluation of plasma and thermal sources for atomic hydrogen-assisted
    epitaxy of InP}},
  year = {1998},
  volume = {16},
  number = {2},
  month = mar,
  pages = {590},
  issn = {07342101},
  doi = {10.1116/1.581075},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{LaPierre1998c,
  author = {LaPierre, R. R.},
  title = {{Evaluation of plasma and thermal sources for atomic hydrogen-assisted
    epitaxy of InP}},
  year = {1998},
  volume = {16},
  number = {2},
  month = mar,
  pages = {590},
  issn = {07342101},
  doi = {10.1116/1.581075},


  journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and
    Films}
}

@ARTICLE{LaPierre1997,
  author = {LaPierre, R. R.},
  title = {{Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP}},
  year = {1997},
  volume = {15},
  number = {5},
  month = sep,
  pages = {1707},
  issn = {0734211X},
  doi = {10.1116/1.589359},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{LaPierre1997a,
  author = {LaPierre, R. R.},
  title = {{Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP}},
  year = {1997},
  volume = {15},
  number = {5},
  month = sep,
  pages = {1707},
  issn = {0734211X},
  doi = {10.1116/1.589359},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Largeau2008,
  author = {Largeau, L. and Dheeraj, D. L. and Tchernycheva, M. and Cirlin, G.
    E. and Harmand, J. C.},
  title = {{Facet and in-plane crystallographic orientations of GaN nanowires
    grown on Si(111)}},
  year = {2008},
  volume = {19},
  number = {15},
  month = apr,
  pages = {155704},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/19/15/155704},


  journal = {Nanotechnology}
}

@ARTICLE{Lathrop2003,
  author = {Lathrop, Richard},
  title = {{Avoiding the solder void}},
  year = {2003},
  pages = {1--7},


  journal = {Proc. ofAPEX Anaheim}
}

@ARTICLE{Lauermann,
  author = {Lauermann, T. and L$\backslash$$\backslash$"uder, T. and Scholz,
    S. and Raabe, B. and Hahn, G. and Terheiden, B.},
  title = {{ENABLING DIELECTRIC REAR SIDE PASSIVATION FOR INDUSTRIAL MASS PRODUCTION
    BY DEVELOPING LEAN PRINTING-BASED SOLAR CELL PROCESSES}},
  year = {2010},


  journal = {Preprint 35th IEEE PVSC, Honolulu, HI}
}

@ARTICLE{Lee1994,
  author = {Lee, Jaesun and Giles, NC and Summers, CJ},
  title = {{Above-band-gap photoluminescence from n-type CdTe:I grown by molecular-beam
    epitaxy}},
  year = {1994},
  volume = {49},
  number = {16},
  month = apr,
  pages = {11459--11462},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.49.11459},


  journal = {Physical Review B},
  publisher = {APS}
}

@ARTICLE{Lee1987,
  author = {Lee, J. W. and Shichijo, H. and Tsai, H. L. and Matyi, R. J.},
  title = {{Defect reduction by thermal annealing of {GaAs} layers grown by
    molecular beam epitaxy on Si substrates}},
  year = {1987},
  volume = {50},
  number = {1},
  pages = {31--33},
  issn = {00036951},
  doi = {10.1063/1.98117},


  journal = {Applied Physics Letters}
}

@PHDTHESIS{Lee2003,
  author = {Lee, J. Y.},
  title = {{Rapid thermal processing of silicon solar cells-passivation and
    diffusion}},
  year = {2003},


  school = {Albert-Ludwigs-University}
}

@ARTICLE{Lee1978,
  author = {Lee, K. H. and Crawford, J. H.},
  title = {{Additive coloration of sapphire}},
  year = {1978},
  volume = {33},
  number = {4},
  pages = {273},
  issn = {00036951},
  doi = {10.1063/1.90362},


  journal = {Applied Physics Letters}
}

@ARTICLE{Lee2009,
  author = {Lee, S.H.},
  title = {{Cost effective process for high-efficiency solar cells}},
  year = {2009},
  volume = {83},
  number = {8},
  month = aug,
  pages = {1285--1289},
  issn = {0038092X},
  doi = {10.1016/j.solener.2009.03.002},


  journal = {Solar Energy},
  keywords = {contact,mechanical scriber,plating,silicon,solar cell},
  publisher = {Elsevier Ltd}
}

@ARTICLE{Li2003a,
  author = {Li, J and Zheng, Y F and Xu, J B and Dai, K},
  title = {{Te-doped cadmium telluride films fabricated by close spaced sublimation}},
  year = {2003},
  volume = {18},
  number = {7},
  month = jul,
  pages = {611--614},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/18/7/302},

  annote = { From Duplicate 2 ( Te-doped cadmium telluride films fabricated by
    close spaced sublimation - Li, J; Zheng, Y F; Xu, J B; Dai, K )


     From Duplicate 2 ( Te-doped cadmium telluride films fabricated by
    close spaced sublimation - Li, J; Zheng, Y F; Xu, J B; Dai, K )






     },

  journal = {Semiconductor Science and Technology}
}

@ARTICLE{Li1995,
  author = {Li, L.},
  title = {{A basic factor of dual epitaxy: the symmetry of similarity of zinc
    blende structure}},
  year = {1995},
  volume = {51},
  number = {6},
  month = nov,
  pages = {902--909},
  issn = {0108-7673},
  doi = {10.1107/S0108767395008014},

  annote = {Cited zero times... this looks like very good work.},

  journal = {Acta Crystallographica Section A Foundations of Crystallography}
}

@ARTICLE{Li1995a,
  author = {Li, L.},
  title = {{A basic factor of dual epitaxy: the symmetry of similarity of zinc
    blende structure}},
  year = {1995},
  volume = {51},
  number = {6},
  month = nov,
  pages = {902--909},
  issn = {0108-7673},
  doi = {10.1107/S0108767395008014},


  journal = {Acta Crystallographica Section A Foundations of Crystallography}
}

@ARTICLE{Li1996a,
  author = {Li, Y. and Giling, L. J.},
  title = {{A closer study on the self-annihilation of antiphase boundaries
    in {GaAs} epilayers}},
  year = {1996},
  volume = {163},
  pages = {203--211},
  annote = {Oh so good when explaining what plans they exist macroscopically!},

  journal = {Journal of Crystal Growth}
}

@ARTICLE{Li1994,
  author = {Li, Y. and Lazzarini, L. and Giling, L. J. and Salviati, G.},
  title = {{On the sublattice location of {GaAs} grown on Ge}},
  year = {1994},
  volume = {76},
  number = {10},
  pages = {5748--5753},
  issn = {00218979},
  doi = {10.1063/1.358412},


  journal = {Journal of Applied Physics},
  keywords = {FILM GROWTH,GALLIUM ARSENIDES,GERMANIUM,GRAIN BOUNDARIES,NUCLEATION,OPTICAL
    MICROSCOPY,ORIENTATION,TEM,TEMPERATURE EFFECTS,VPE}
}

@ARTICLE{Li1996,
  author = {Li, Y. and Salviati, G. and Bongers, M. M. G. and Lazzarini, L. and
    Nasi, L. and Giling, L. J.},
  title = {{On the formation of antiphase domains in the system of {GaAs} on
    Ge}},
  year = {1996},
  volume = {163},
  number = {3},
  month = jun,
  pages = {195--202},
  issn = {00220248},
  doi = {10.1016/0022-0248(95)00958-2},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Lieten2010,
  author = {Lieten, R. R. and Degroote, S. and Clemente, F. and Leys, M. and
    Borghs, G.},
  title = {{Hydrogen and inert species in solid phase epitaxy}},
  year = {2010},
  volume = {96},
  number = {5},
  pages = {052109},
  issn = {00036951},
  doi = {10.1063/1.3293453},


  journal = {Applied Physics Letters}
}

@ARTICLE{Lieten2010a,
  author = {Lieten, R. R. and Degroote, S. and Clemente, F. and Leys, M. and
    Borghs, G.},
  title = {{Hydrogen and inert species in solid phase epitaxy}},
  year = {2010},
  volume = {96},
  number = {5},
  pages = {052109},
  issn = {00036951},
  doi = {10.1063/1.3293453},


  journal = {Applied Physics Letters}
}

@ARTICLE{Ligeon1990,
  author = {Ligeon, E.},
  title = {{Structure of (111) CdTe epilayers on misoriented (001) GaAs}},
  year = {1990},
  volume = {51},
  number = {5},
  pages = {1723},
  doi = {10.1063/1.345512},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Ligeon1990a,
  author = {Ligeon, E.},
  title = {{Structure of (111) CdTe epilayers on misoriented (001) GaAs}},
  year = {1990},
  volume = {51},
  number = {5},
  pages = {1723},
  doi = {10.1063/1.345512},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Liliental-Weber1989,
  author = {Liliental-Weber, Z. and O'Keefe, M. A. and Washburn, J.},
  title = {{Inversion Boundaries in {GaAs} grown on Si}},
  year = {1989},
  volume = {30},
  pages = {20--26},

  journal = {Ultramicroscopy}
}

@ARTICLE{Liliental-Weber1988,
  author = {Liliental-Weber, Z. and Weber, E. R. and Parechanian-Allen, L. and
    Washburn, J.},
  title = {{On the use of Convergent-Beam Electron Diffraction for Identification
    of Antiphase Boundaries in {GaAs} grown on Si}},
  year = {1988},
  volume = {26},
  pages = {59--63},
  abstract = {Dynanfical coupling effects between the (200) reflection and weak
    odd-index reflections in the Bragg position in convergent-beam diffraction
    patterns has been used to detect antiphase boundaries (APBs) in GaAs
    grown on (001) Si. It was shown that APBs lie in most cases on energetically
    favorable \{110\} planes and effectively stop the propagation of
    dislocations, twins and stacking faults. The formation of APBs is
    promoted by Si surface contamination and irregularities.},
  annote = {But APBs don't effectively stop the propagation of dislocations,
    twins and stacking faults...at least not the ones in GaSb on Si},

  journal = {Ultramicroscopy}
}

@ARTICLE{LimH.W.2002,
  author = {{Lim H. W.}, Gerald and Wortis, Michael and Mukhopadhyay, Ranjan},
  title = {{Stomatocyte-discocyte-echinocyte sequence of the human red blood
    cell: Evidence for the bilayer- couple hypothesis from membrane mechanics}},
  year = {2002},
  volume = {99},
  number = {26},
  pages = {16766--16769},

  annote = {Red-cell shape is encoded in the mechanical properties of the membrane.
    The plasma membrane contributes bending rigidity; the protein-based
    membrane skeleton contributes stretch and shear elasticity. When
    both effects are included, membrane mechanics can reproduce in detail
    the full stomatocyte-discocyte-echinocyte sequence by variation of
    a single parameter related to the bilayer couple originally introduced
    by Sheetz and Singer [Sheetz, M. P. \& Singer, S. J. (1974) 71, 4457-4461].},
  journal = {Proceedings of the National Academy of Sciences of the United States
    of America}
}

@ARTICLE{Lin2008,
  author = {Lin, Ching-Hsi and Tsai, Song-Yeu and Hsu, Shih-Peng and Hsieh, Ming-Hsun},
  title = {{Structural properties of the solidified-Al/regrown-Si structures
    of printed Al contacts on crystalline Si solar cells}},
  year = {2008},
  volume = {92},
  number = {8},
  month = aug,
  pages = {986--991},
  issn = {09270248},
  doi = {10.1016/j.solmat.2008.02.031},


  journal = {Sol. Energy Mater. Sol. Cells}
}

@ARTICLE{Liu2007,
  author = {Liu, Lilin and Zhang, Yousheng and Zhang, Tong-Yi},
  title = {{Strain relaxation in heteroepitaxial films by misfit twinning. I.
    Critical thickness}},
  year = {2007},
  volume = {101},
  number = {6},
  pages = {063501},
  issn = {00218979},
  doi = {10.1063/1.2433368},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Lo1987,
  author = {Lo, Y. H. and Wu, M. C. and Lee, H. and Wang, S. and Liliental-Weber,
    Z.},
  title = {{Dislocation microstructures on flat and stepped Si surfaces: Guidance
    for growing high quality {GaAs} on (100)Si substrates}},
  year = {1987},
  volume = {52},
  number = {17},
  pages = {1386--1388},
  annote = {Read Wang, Y., Ruterana, P., Desplanque, L., El Kazzi, S., \& Wallart,
    X. (2011). Strain relief at the GaSb/GaAs interface versus substrate
    surface treatment and AlSb interlayers thickness. Journal of Applied
    Physics, 109(2), 023509. doi: 10.1063/1.3532053.},

  journal = {Applied Physics Letters}
}

@ARTICLE{Lotnyk2007,
  author = {Lotnyk, Andriy and Senz, Stephan and Hesse, Dietrich},
  title = {{Kirkendall-like Voids Produced by Surface Diffusion}},
  year = {2007},
  volume = {13},
  pages = {380},
  doi = {10.106/j.actamat.2006.12.022},


  journal = {MICROSCOPY AND MICROANALYSIS-NEW YORK-},
  publisher = {Cambridge Univ Press}
}

@ARTICLE{Loubradou1996,
  author = {Loubradou, M. and Bonnet, R. and Vila, A.},
  title = {{A triple-node intrinsic stacking fault/nanotwin/extrinsic stacking
    fault in a small {GaAs} island grown on a Si(001) substrate}},
  year = {1996},
  volume = {74},
  number = {1},
  pages = {1--8},
  annote = {And this is how you interpret lattice images of defects!},

  journal = {Philosophical Magazine Letters}
}

@ARTICLE{And1986,
  author = {Lu, G. and Cockayne, D. J. H.},
  title = {{Partial separations of extended $\alpha$ and $\beta$ dislocations
    in II-VI semiconductors}},
  year = {1986},
  volume = {53},
  number = {3},
  month = mar,
  pages = {307--320},
  issn = {0141-8610},
  doi = {10.1080/01418618608242833},

  journal = {Philosophical Magazine A}
}

@ARTICLE{Lu1986,
  author = {Lu, G. and Cockayne, D. J. H.},
  title = {{Partial separations of extended $\alpha$ and $\beta$ dislocations
    in II-VI semiconductors}},
  year = {1986},
  volume = {53},
  number = {3},
  month = mar,
  pages = {307--320},
  issn = {0141-8610},
  doi = {10.1080/01418618608242833},

  journal = {Philosophical Magazine A}
}

@ARTICLE{Luschitz2007,
  author = {Luschitz, J. and Lakus-Wollny, K. and Klein, a. and Jaegermann, W.},
  title = {{Growth regimes of CdTe deposited by close-spaced sublimation for
    application in thin film solar cells}},
  year = {2007},
  volume = {515},
  number = {15},
  month = may,
  pages = {5814--5818},
  issn = {00406090},
  doi = {10.1016/j.tsf.2006.12.171},


  journal = {Thin Solid Films},
  keywords = {cadmium telluride,growth mechanism,scanning electron microscopy,x-ray
    diffraction}
}

@ARTICLE{DeLyon1995,
  author = {de Lyon, T. J. and Rajavel, D. and Johnson, S. M. and Cockrum, C.
    A.},
  title = {{Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates}},
  year = {1995},
  volume = {66},
  number = {16},
  pages = {2119},
  issn = {00036951},
  doi = {10.1063/1.113922},


  journal = {Applied Physics Letters}
}

@ARTICLE{Muller2000,
  author = {M\"{u}ller, P and Kern, R},
  title = {{Equilibrium nano-shape changes induced by epitaxial stress (generalised
    Wulf-Kaishew theorem)}},
  year = {2000},
  volume = {457},
  number = {1-2},
  month = jan,
  pages = {229--253},

  isbn = {0039-6028},
  journal = {Surface Science},
  keywords = {Epitaxy,Germanium,Silicon,Surface relaxation and reconstruction}
}

@ARTICLE{Magee1978,
  author = {Magee, T. J. and Peng, J.},
  title = {{Si epitaxial regrowth and grain structure of Al metallization on
    〈100〉 Si}},
  year = {1978},
  volume = {49},
  number = {7},
  pages = {4284},
  issn = {00218979},
  doi = {10.1063/1.325349},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Magnea1987,
  author = {Magnea, N and Dal'bo, F. and Fontaine, C. and Million, A. and Gaillard,
    J.P. and Dang, Le Si and D'Augbign\'{e}, Y.Merle and Tatarenko, S.},
  title = {{Mismatch strain measurements of MBE grown CdTe}},
  year = {1987},
  volume = {81},
  number = {1-4},
  month = feb,
  pages = {501--504},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90441-6},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Maillard2002,
  author = {Maillard, M and Giorgio, S and Pileni, M P},
  title = {{Silver Nanodisks}},
  year = {2002},
  volume = {14},
  number = {15},
  pages = {1084--1086},
  doi = {10.1002/1521-4095(20020805)14:15},

  address = {LM2N, URA CNRS 1662, Universit\'{e} Pierre et Marie Curie, BP 52,
    4 Place Jussieu, F-75252 Paris Cedex 05 (France); CRMC2-CNRS, Campus
    de Luminy, Case 913, F-13288 Marseille Cedex 9 (France)},
  isbn = {1521-4095},
  journal = {Advanced Materials}
}

@ARTICLE{Marple1966,
  author = {Marple, D.},
  title = {{Optical Absorption Edge in CdTe: Experimental}},
  year = {1966},
  volume = {150},
  number = {2},
  month = oct,
  pages = {728--734},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.150.728},
  journal = {Physical Review}
}

@BOOK{Martinez2008a,
  author = {Martinez, Omar S. and Palomera, Roger C. and Enriquez, Joel P. and
    Alonso, Claudia M. and Mathews, Nini R. and Mathew, Xavier and Compaan,
    Alvin D.},
  title = {{Development of wide band gap Cd1-XMgXTe/CdS top cells for tandem
    devices}},
  year = {2008},
  publisher = {IEEE},
  isbn = {978-1-4244-1640-0},
  pages = {1--5},
  doi = {10.1109/PVSC.2008.4922634},

  annote = { From Duplicate 2 ( Development of wide band gap Cd1-XMgXTe/CdS top
    cells for tandem devices - Martinez, Omar S.; Palomera, Roger C.;
    Enriquez, Joel P.; Alonso, Claudia M.; Mathews, Nini R.; Mathew,
    Xavier; Compaan, Alvin D. )


     From Duplicate 1 ( Development of wide band gap Cd1-XMgXTe/CdS top
    cells for tandem devices - Martinez, Omar S.; Palomera, Roger C.;
    Enriquez, Joel P.; Alonso, Claudia M.; Mathews, Nini R.; Mathew,
    Xavier; Compaan, Alvin D. )






     },
  booktitle = {2008 33\textsuperscript{rd} IEEE Photovolatic Specialists Conference},

  issn = {0160-8371},
  month = may
}

@INPROCEEDINGS{Marvin1989,
  author = {Marvin, DC and Froedge, SL},
  title = {{Analysis of interdigitated back contact silicon solar cells for
    space use}},
  booktitle = {Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings
    of the 24\textsuperscript{th} Intersociety},
  year = {1989},
  publisher = {IEEE},
  pages = {821--827},


}

@ARTICLE{Matare1984,
  author = {Mataré, H. F.},
  title = {{Carrier transport at grain boundaries in semiconductors}},
  year = {1984},
  volume = {56},
  number = {10},
  pages = {2605},
  issn = {00218979},
  doi = {10.1063/1.333793},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Mathew2009,
  author = {Mathew, X and Drayton, J and Parikh, V and Mathews, N R and Liu,
    Xiangxin and Compaan, a D},
  title = {{Development of a semitransparent CdMgTe/CdS top cell for applications
    in tandem solar cells}},
  year = {2009},
  volume = {24},
  number = {1},
  month = jan,
  pages = {015012},
  issn = {0268-1242},
  doi = {10.1088/0268-1242/24/1/015012},

  annote = { From Duplicate 2 ( Development of a semitransparent CdMgTe/CdS top
    cell for applications in tandem solar cells - Mathew, X; Drayton,
    J; Parikh, V; Mathews, N R; Liu, Xiangxin; Compaan, a D )


     From Duplicate 1 ( Development of a semitransparent CdMgTe/CdS top
    cell for applications in tandem solar cells - Mathew, X; Drayton,
    J; Parikh, V; Mathews, N R; Liu, Xiangxin; Compaan, a D )






     },

  journal = {Semiconductor Science and Technology}
}

@INPROCEEDINGS{Matin2010,
  author = {Matin, MA and Azlan, A.B. and Amin, Nowshad},
  title = {{Enhancing the efficiency of CdTe thin film solar cells by inserting
    novel back contact buffer layers}},
  booktitle = {Developments in Renewable Energy Technology (ICDRET), 2009 1\textsuperscript{st}
    International Conference on the},
  year = {2010},
  publisher = {IEEE},
  pages = {1--4},


}

@INPROCEEDINGS{Matin2010a,
  author = {Matin, MA and Azlan, A.B. and Amin, Nowshad},
  title = {{Enhancing the efficiency of CdTe thin film solar cells by inserting
    novel back contact buffer layers}},
  booktitle = {Developments in Renewable Energy Technology (ICDRET), 2009 1\textsuperscript{st}
    International Conference on the},
  year = {2010},
  publisher = {IEEE},
  pages = {1--4},

  annote = { From Duplicate 2 ( Enhancing the efficiency of CdTe thin film solar
    cells by inserting novel back contact buffer layers - Matin, MA;
    Azlan, A.B.; Amin, Nowshad )


     From Duplicate 1 ( Enhancing the efficiency of CdTe thin film solar
    cells by inserting novel back contact buffer layers - Matin, MA;
    Azlan, A.B.; Amin, Nowshad )


     From Duplicate 2 ( Enhancing the efficiency of CdTe thin film solar
    cells by inserting novel back contact buffer layers - Matin, MA;
    Azlan, A.B.; Amin, Nowshad )








     },

}

@ARTICLE{Matthias1994,
  author = {Matthias, E and Reichling, M and Siegel, J},
  title = {{The influence of thermal diffusion on laser ablation of metal films}},
  year = {1994},
  volume = {58},
  number = {2},
  pages = {129--136},
  issn = {0947-8396},


  journal = {Applied Physics A},
  publisher = {Springer}
}

@ARTICLE{McCaldin1972,
  author = {McCaldin, J. O. and Sankur, H.},
  title = {{Precipitation of Si from the Al Metallization of Integrated Circuits}},
  year = {1972},
  volume = {20},
  number = {4},
  pages = {171},
  issn = {00036951},
  doi = {10.1063/1.1654096},


  journal = {Applied Physics Letters}
}

@ARTICLE{McCaldin1971,
  author = {McCaldin, J. O. and Sankur, H.},
  title = {{Diffusivity and solubility of Si in the Al metallization of integrated
    circuits}},
  year = {1971},
  volume = {19},
  number = {12},
  pages = {524--527},


  journal = {Appl. Phys. Lett.}
}

@INPROCEEDINGS{McCann1992,
  author = {McCann, M. and Raabe, Bernd and Jooss, W. and Kopecek, R. and Fath,
    P.},
  title = {{18.1\% EFFICIENCY FOR A LARGE AREA, MULTI-CRYSTALLINE SILICON SOLAR
    CELL.}},
  year = {1992},
  volume = {1100},
  pages = {0--5},


}

@ARTICLE{Mchugo1997,
  author = {McHugo, SA and Hieslmair, H and Weber, ER},
  title = {{Gettering of metallic impurities in photovoltaic silicon}},
  year = {1997},
  volume = {64},
  number = {2},
  pages = {127--137},


  journal = {Appl. Phys. A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Mei2004,
  author = {Mei, Z. X. and Wang, Y. and Du, X. L. and Ying, M. J. and Zeng, Z.
    Q. and Zheng, H. and Jia, J. F. and Xue, Q. K. and Zhang, Z.},
  title = {{Controlled growth of O-polar ZnO epitaxial film by oxygen radical
    preconditioning of sapphire substrate}},
  year = {2004},
  volume = {96},
  number = {12},
  pages = {7108},
  issn = {00218979},
  doi = {10.1063/1.1812362},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Meier2001,
  author = {Meier, D},
  title = {{Aluminum alloy back p-n junction dendritic web silicon solar cell}},
  year = {2001},
  volume = {65},
  number = {1-4},
  month = jan,
  pages = {621--627},
  issn = {09270248},
  doi = {10.1016/S0927-0248(00)00150-1},


  journal = {Solar Energy Materials and Solar Cells},
  keywords = {alloy,aluminum,n junction,p,silicon,thin}
}

@ARTICLE{Meikle1987,
  author = {Meikle, S. G. and Thompson, D. a.},
  title = {{Rapid thermal annealing of ion implanted cdte}},
  year = {1987},
  volume = {16},
  number = {3},
  month = may,
  pages = {157--161},
  issn = {0361-5235},
  doi = {10.1007/BF02655480},
  annote = { From Duplicate 2 ( Rapid thermal annealing of ion implanted cdte
    - Meikle, S. G.; Thompson, D. a. )


     From Duplicate 1 ( Rapid thermal annealing of ion implanted cdte
    - Meikle, S. G.; Thompson, D. a. )






     },

  journal = {Journal of Electronic Materials},
  keywords = {0,01,and 0,associates,br in methanol,cdte,g,ion implantation,rapid
    thermal annnealing,rta was carried out,using an a}
}

@ARTICLE{Meitl2005,
  author = {Meitl, Matthew a. and Zhu, Zheng-Tao and Kumar, Vipan and Lee, Keon
    Jae and Feng, Xue and Huang, Yonggang Y. and Adesida, Ilesanmi and
    Nuzzo, Ralph G. and Rogers, John a.},
  title = {{Transfer printing by kinetic control of adhesion to an elastomeric
    stamp}},
  year = {2005},
  volume = {5},
  number = {1},
  month = dec,
  pages = {33--38},
  issn = {1476-1122},
  doi = {10.1038/nmat1532},

  journal = {Nature Materials}
}

@ARTICLE{Meitl1992,
  author = {Meitl, Matthew A. and Zhu, Zheng-Tao and Kumar, Vipan and Lee, Keon
    Jae and Feng, Xue and Huang, Yonggang Y. and Adesida, Ilesanmi and
    Nuzzo, Ralph G. and Rogers, John A.},
  title = {{Contact electrification and adhesion between dissimilar materials}},
  year = {1992},
  volume = {5},
  number = {1},
  month = dec,
  pages = {33--38},
  issn = {1476-1122},


  journal = {Science}
}

@ARTICLE{Meng1999,
  author = {Meng, L and Liu, M S},
  title = {{Thin pyrite (FeS2) films prepared by thermal-sulfurating iron films
    at various temperatures}},
  year = {1999},
  volume = {60},
  number = {3},
  pages = {168--172},

  isbn = {0921-5107},
  journal = {Materials Science and Engineering B},
  keywords = {Microstructure,Pyrite,Sulfidation,Thin film}
}

@ARTICLE{Meng2003a,
  author = {Meng, L. and Liu, Y.H. and Tian, L.},
  title = {{Structural, optical and electrical properties of polycrystalline
    pyrite (FeS2) films obtained by thermal sulfuration of iron films}},
  year = {2003},
  volume = {253},
  number = {1-4},
  month = jun,
  pages = {530--538},
  issn = {00220248},
  doi = {10.1016/S0022-0248(03)01040-6},

  annote = { From Duplicate 2 ( Structural, optical and electrical properties
    of polycrystalline pyrite (FeS2) films obtained by thermal sulfuration
    of iron films - Meng, L.; Liu, Y.H.; Tian, L. )


     From Duplicate 2 ( Structural, optical and electrical properties
    of polycrystalline pyrite (FeS2) films obtained by thermal sulfuration
    of iron films - Meng, L.; Liu, Y.H.; Tian, L. )






     },

  journal = {Journal of Crystal Growth},
  keywords = {a1,b1,b2,characterization,crystallite,semiconducting materials,sulfides}
}

@ARTICLE{Meng2003,
  author = {Meng, L and Liu, Y H and Tian, L},
  title = {{Evolutions of structure, composition and optical absorption behavior
    of pyrite films formed by sulfurating iron}},
  year = {2003},
  volume = {38},
  number = {6},
  pages = {941--948},

  annote = {The crystal structure, crystallite morphology, film composition and
    absorption properties were investigated for the pyrite films sulfurated
    from iron films. The pyrite particles nucleate mainly from the transitional
    phases of iron sulfides formed in the films during 673 K sulfurating
    while the pyrite particles nucleate directly from the iron bisulfides
    formed in the films during 773 K sulfurating. There are higher sulfur
    contents and more obvious grain propagation in the film sulfurated
    at 773 K than in that sulfurated at 673 K. By prolonging sulfuration
    time at 673 K, the optical absorption edge tends to increase and
    approaches the ideal value as sulfurated over 20 h. Low absorption
    edges exist in the films sulfurated at 773 K.},
  isbn = {0025-5408},
  journal = {Materials Research Bulletin},
  keywords = {A. Thin films,B. Chemical synthesis,C. X-ray diffraction,D. Microstructure,D.
    Optical properties}
}

@ARTICLE{Mgbenu1980,
  author = {Mgbenu, E N},
  title = {{ACCELERATED AGING OF A1/Ge AND A1/Si THIN FILM COUPLES}},
  year = {1980},
  volume = {65},
  pages = {267--274},

  journal = {Film}
}

@ARTICLE{Mikhailov2011,
  author = {Mikhailov, V. I. and Butashin, a. V. and Kanevsky, V. M. and Polyak,
    L. E. and Rakova, E. V. and Moslemov, a. E. and Kvartalov, V. B.},
  title = {{Study of molecular beam epitaxy of cadmium telluride on sapphire}},
  year = {2011},
  volume = {5},
  number = {3},
  month = jun,
  pages = {595--600},
  issn = {1027-4510},
  doi = {10.1134/S1027451011060139},

  journal = {Journal of Surface Investigation. X-ray, Synchrotron and Neutron
    Techniques}
}

@BOOK{Millman1977,
  author = {Millman, Richard S and Parker, George D},
  title = {{Elements of differential geometry}},
  year = {1977},
  publisher = {Prentice-Hall},
  isbn = {0132641437},
  pages = {265},
  address = {Englewood Cliffs, N.J.},
  annote = {Richard S. Millman, George D. Parker. --; Includes index.; Bibliography:
    p. 248-251.},
  keywords = {Geometry, Differential}
}

@ARTICLE{Mishra2007,
  author = {Mishra, Y K and Kabiraj, D and Sulania, I and Pivin, J C and Avasthi,
    D K},
  title = {{Synthesis and characterization of gold nanorings}},
  year = {2007},
  volume = {7},
  number = {6},
  month = jun,
  pages = {1878--1881},
  address = {Inter University Accelerator Centre, P 0. Box 10502, New Delhi 110067,
    India.},
  annote = {In the present work, we report the formation of Au nanorings on quartz
    substrate by thermal evaporation of Au on quartz and subsequent annealing
    in certain conditions as a function of metal volume fraction and
    annealing temperature. Optical extinction cross-sections measurements
    and atomic force microscopy (AFM) studies have been performed on
    the as-deposited and annealed samples. No signature of nanoparticles
    formation is found in case of as-deposited samples, while spectra
    of annealed samples show a clear signature of surface plasmon resonance
    absorption (SPR) peaks around 580 nm, which reveals the formation
    of Au nanostructure. AFM images clearly show the formation of Au
    nanorings under certain conditions. The observed SPR frequency of
    the Au nanorings in our case is in agreement with the estimated frequency
    obtained from the formulation of Aizpurua et al. Optical extinction
    measurements at different incidence angles were performed, which
    showed splitting of SPR at angles beyond 20 degrees.},
  isbn = {1533-4880},
  journal = {Journal of nanoscience and nanotechnology},
  keywords = {Crystallization/methods,Gold/chemistry,Hot Temperature,Macromolecular
    Substances/chemistry,Materials Testing,Molecular Conformation,Nanostructures/chemistry/ultrastructure,Nanotechnology/methods,Particle
    Size,Surface Properties}
}

@ARTICLE{Molina1993,
  author = {Molina, S. I. and Arag\'{o}n, G. and Garc\'{\i}a, R. and Gonz\'{a}lez,
    Y. and Gonz\'{a}lez, L. and Briones, F.},
  title = {{A study of the evolution process of antiphase boundaries in {GaAs}
    on Si}},
  year = {1993},
  volume = {22},
  number = {5},
  month = may,
  pages = {567--572},
  issn = {0361-5235},
  doi = {10.1007/BF02661632},

  journal = {Journal of Electronic Materials},
  keywords = {almbe,antiphase boundaries,gaas on silicon}
}

@ARTICLE{Momma1997a,
  author = {Momma, C. and Nolte, S. and {N. Chichkov}, B. and v. Alvensleben,
    F. and T$\backslash$$\backslash$"unnermann, A.},
  title = {{Precise laser ablation with ultrashort pulses}},
  year = {1997},
  volume = {109},
  pages = {15--19},
  doi = {10.1109/CLEOE.1996.562552},


  isbn = {0-7803-3169-9},
  journal = {Appl. Surf. Sci.},
  keywords = {femtosecond lasers,laser ablation,material processing,microstructuring,short-pulse
    lasers},
  publisher = {Elsevier}
}

@ARTICLE{Morfa2009,
  author = {Morfa, Anthony},
  title = {{Plasmons in solar energy conversion}},
  year = {2009},
  pages = {3--5},
  issn = {18182259},
  doi = {10.1117/2.1200906.1651},


  journal = {SPIE Newsroom}
}

@ARTICLE{Morgan1965,
  author = {Morgan, TN},
  title = {{Broadening of impurity bands in heavily doped semiconductors}},
  year = {1965},
  volume = {139},
  number = {1A},
  pages = {343--348},
  doi = {10.1103/PhysRev.139.A343},

  journal = {Phys. Rev},
  publisher = {APS}
}

@ARTICLE{MorkoG1994,
  author = {MorkoG, H. and Strite, S. and Gao, GB and Lin, ME and Sverdlov, B.
    and Burns, M.},
  title = {{Large-band-gap SIC, Ill-V nitride, and II-VI ZnSe-based semiconductor
    device technologies}},
  year = {1994},
  volume = {76},
  number = {3},
  pages = {1363},

  journal = {J. Appl. Phys.}
}

@ARTICLE{DeMoure-Flores2012,
  author = {de Moure-Flores, F. and Quiñones-Galván, J. G. and Guillén-Cervantes,
    a. and Arias-Cerón, J. S. and Contreras-Puente, G. and Hernández-Hernández,
    a. and Santoyo-Salazar, J. and {de la L. Olvera}, M. and Santana-Aranda,
    M. a. and Zapata-Torres, M. and Mendoza-Álvarez, J. G. and Meléndez-Lira,
    M.},
  title = {{Physical properties of CdTe:Cu films grown at low temperature by
    pulsed laser deposition}},
  year = {2012},
  volume = {112},
  number = {11},
  pages = {113110},
  issn = {00218979},
  doi = {10.1063/1.4768455},


  journal = {Journal of Applied Physics}
}

@ARTICLE{DeMoure-Flores2012b,
  author = {de Moure-Flores, F. and Quiñones-Galván, J. G. and Guillén-Cervantes,
    a. and Santoyo-Salazar, J. and Hernández-Hernández, a. and Olvera,
    M. De La L. and Zapata-Torres, M. and Meléndez-Lira, M.},
  title = {{Structural and optical properties of Cu-doped CdTe films with hexagonal
    phase grown by pulsed laser deposition}},
  year = {2012},
  volume = {2},
  number = {2},
  pages = {022131},
  issn = {21583226},
  doi = {10.1063/1.4721275},


  journal = {AIP Advances}
}

@ARTICLE{Mudry2008,
  author = {Mudry, S. and Shtablavyi, I.},
  title = {{Cluster structure in Al-Si eutectic melt with solid Ni particles}},
  year = {2008},
  volume = {1},
  pages = {163},

  journal = {Chem. Met. Alloys}
}

@MISC{Mukhopadhyay2002,
  author = {Mukhopadhyay, Ranjan and {Gerald Lim}, H W and Wortis, Michael},
  title = {{Echinocyte Shapes: Bending, Stretching, and Shear Determine Spicule
    Shape and Spacing}},
  year = {2002},
  month = jan,

  annote = {We study the shapes of human red blood cells using continuum mechanics.
    In particular, we model the crenated, echinocytic shapes and show
    how they may arise from a competition between the bending energy
    of the plasma membrane and the stretching/shear elastic energies
    of the membrane skeleton. In contrast to earlier work, we calculate
    spicule shapes exactly by solving the equations of continuum mechanics
    subject to appropriate boundary conditions. A simple scaling analysis
    of this competition reveals an elastic length ›el, which sets the
    length scale for the spicules and is, thus, related to the number
    of spicules experimentally observed on the fully developed echinocyte.},
  booktitle = {Biophysical Journal},
  isbn = {0006-3495},
  number = {4},
  pages = {1756--1772},
  volume = {82}
}

@ARTICLE{Murano1996,
  author = {Murano, K},
  title = {{Surfactant effect of hydrogen for nickel growth on Si(111)7 × 7
    surface}},
  year = {1996},
  volume = {357-358},
  month = jun,
  pages = {910--916},
  issn = {00396028},
  doi = {10.1016/0039-6028(96)00290-7},


  journal = {Surface Science},
  keywords = {desorption induced by electronic,diet,diffraction,electron stimulated
    desorption,esd,hydrogen,leed,low energy electron,nickel,silicides,silicon,surface
    diffusion,transitions}
}

@ARTICLE{Nagai1974,
  author = {Nagai, Haruo},
  title = {{Structure of vapor-deposited GaxIn1−xAs crystals}},
  year = {1974},
  volume = {45},
  number = {9},
  pages = {3789},
  issn = {00218979},
  doi = {10.1063/1.1663861},

  annote = {Looks like Nagi proposes something very different than we do. Something
    to do with offcut and steps.},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Nagai1974a,
  author = {Nagai, Haruo},
  title = {{Structure of vapor-deposited GaxIn1−xAs crystals}},
  year = {1974},
  volume = {45},
  number = {9},
  pages = {3789},
  issn = {00218979},
  doi = {10.1063/1.1663861},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Nakagawa2006,
  author = {Nakagawa, Naoyuki and Hwang, Harold Y. and Muller, David a.},
  title = {{Why some interfaces cannot be sharp}},
  year = {2006},
  volume = {5},
  number = {3},
  month = jan,
  pages = {204--209},
  issn = {1476-1122},
  doi = {10.1038/nmat1569},

  journal = {Nature Materials}
}

@ARTICLE{Nakamura2009b,
  author = {Nakamura, Kunio and Kamoshida, M.},
  title = {{Low temperature diffusion of Al into polycrystalline Si}},
  year = {2009},
  volume = {48},
  number = {July 1977},
  pages = {5349--5351},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Nakamura1992,
  author = {Nakamura, Y. and Otsuka, N. and Lange, M. D. and Sporken, R. and
    Faurie, J. P.},
  title = {{Origin of dual epitaxy in the growth of CdTe on (211) GaAs}},
  year = {1992},
  volume = {60},
  number = {11},
  pages = {1372},
  issn = {00036951},
  doi = {10.1063/1.107294},


  journal = {Applied Physics Letters},
  keywords = {*Notes},
  mendeley-tags = {*Notes}
}

@ARTICLE{Nakayama2008,
  author = {Nakayama, Keisuke and Tanabe, Katsuaki and Atwater, Harry a.},
  title = {{Plasmonic nanoparticle enhanced light absorption in {GaAs} solar
    cells}},
  year = {2008},
  volume = {93},
  number = {12},
  pages = {121904},
  issn = {00036951},
  doi = {10.1063/1.2988288},


  journal = {Applied Physics Letters}
}

@ARTICLE{Nannarone1997,
  author = {Nannarone, S.},
  title = {{Electronic Properties of Hydrogen Exposed III-V Semiconductor Surfaces}},
  year = {1997},
  volume = {159},
  number = {1},
  pages = {157--173},
  issn = {1521-396X},


  journal = {physica status solidi (a)},
  publisher = {John Wiley \& Sons}
}

@ARTICLE{Nannarone1997a,
  author = {Nannarone, S.},
  title = {{Electronic Properties of Hydrogen Exposed III-V Semiconductor Surfaces}},
  year = {1997},
  volume = {159},
  number = {1},
  pages = {157--173},
  issn = {1521-396X},


  journal = {physica status solidi (a)},
  publisher = {John Wiley \& Sons}
}

@ARTICLE{Narayan2003,
  author = {Narayan, J. and Larson, B. C.},
  title = {{Domain epitaxy: A unified paradigm for thin film growth}},
  year = {2003},
  volume = {93},
  number = {1},
  pages = {278},
  issn = {00218979},
  doi = {10.1063/1.1528301},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Neave1983,
  author = {Neave, J. H.},
  title = {{Some observations on Ge:GaAs(001) and {GaAs}:Ge(001) interfaces
    and films}},
  year = {1983},
  volume = {1},
  number = {3},
  pages = {668},
  doi = {10.1116/1.582574},

  journal = {Journal of Vacuum Science}
}

@ARTICLE{Neave1983a,
  author = {Neave, J. H.},
  title = {{Some observations on Ge:GaAs(001) and {GaAs}:Ge(001) interfaces
    and films}},
  year = {1983},
  volume = {1},
  number = {3},
  pages = {668},
  doi = {10.1116/1.582574},

  journal = {Journal of Vacuum Science }
}

@ARTICLE{NeergaardWaltenburg1995,
  author = {{Neergaard Waltenburg}, Hanne. and Yates, JT},
  title = {{Surface Chemistry of Silicon}},
  year = {1995},
  volume = {95},
  number = {5},
  month = jul,
  pages = {1589--1673},
  doi = {10.1021/cr00037a600},

  journal = {Chemical Reviews}
}

@ARTICLE{NeergaardWaltenburg1995a,
  author = {{Neergaard Waltenburg}, Hanne. and Yates, John T.},
  title = {{Surface Chemistry of Silicon}},
  year = {1995},
  volume = {95},
  number = {5},
  month = jul,
  pages = {1589--1673},
  issn = {0009-2665},
  doi = {10.1021/cr00037a600},

  journal = {Chemical Reviews}
}

@ARTICLE{Neethling1994,
  author = {Neethling, J. H. and Alberts, V.},
  title = {{Multiple twinning in {GaAs} epitaxial layers grown on Si(001) and
    Si(111)}},
  year = {1994},
  volume = {75},
  number = {7},
  pages = {3435},
  issn = {00218979},
  doi = {10.1063/1.356103},


  journal = {Journal of Applied Physics},
  keywords = {EPITAXIAL LAYERS,GALLIUM ARSENIDES,INTERFACE STRUCTURE,SILICON,TEM,TWINNING,VPE}
}

@ARTICLE{Nehl2006,
  author = {Nehl, Colleen L and Liao, Hongwei and Hafner, Jason H},
  title = {{Optical Properties of Star-Shaped Gold Nanoparticles}},
  year = {2006},
  volume = {6},
  number = {4},
  month = jan,
  pages = {683--688},
  doi = {10.1021/nl052409y},
  annote = {doi: 10.1021/nl052409y; M3: doi: 10.1021/nl052409y},
  isbn = {1530-6984},
  journal = {Nano Letters},
  publisher = {American Chemical Society}
}

@ARTICLE{Neretina2007,
  author = {Neretina, S and Hughes, R a and Britten, J F and Sochinskii, N V
    and Preston, J S and Mascher, P},
  title = {{Vertically aligned wurtzite CdTe nanowires derived from a catalytically
    driven growth mode}},
  year = {2007},
  volume = {18},
  number = {27},
  month = jul,
  pages = {275301},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/18/27/275301},


  journal = {Nanotechnology}
}

@ARTICLE{Neretina2007a,
  author = {Neretina, S and Hughes, R a and Britten, J F and Sochinskii, N V
    and Preston, J S and Mascher, P},
  title = {{Vertically aligned wurtzite CdTe nanowires derived from a catalytically
    driven growth mode}},
  year = {2007},
  volume = {18},
  number = {27},
  month = jul,
  pages = {275301},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/18/27/275301},


  journal = {Nanotechnology}
}

@ARTICLE{Neretina2008b,
  author = {Neretina, S. and Hughes, R A and Devenyi, G A and Sochinskii, N V
    and Preston, J S and Mascher, P},
  title = {{The role of substrate surface alteration in the fabrication of vertically
    aligned CdTe nanowires}},
  year = {2008},
  volume = {19},
  number = {18},
  month = may,
  pages = {185601},
  issn = {0957-4484},
  doi = {10.1088/0957-4484/19/18/185601},

  abstract = {Previously we have described the deposition of vertically aligned
    wurtzite CdTe nanowires derived from an unusual catalytically driven
    growth mode. This growth mode could only proceed when the surface
    of the substrate was corrupted with an alcohol layer, although the
    role of the corruption was not fully understood. Here, we present
    a study detailing the remarkable role that this substrate surface
    alteration plays in the development of CdTe nanowires; it dramatically
    improves the size uniformity and largely eliminates lateral growth.
    These effects are demonstrated to arise from the altered surface's
    ability to limit Ostwald ripening of the catalytic seed material
    and by providing a surface unable to promote the epitaxial relationship
    needed to sustain a lateral growth mode. The axial growth of the
    CdTe nanowires is found to be exclusively driven through the direct
    impingement of adatoms onto the catalytic seeds leading to a self-limiting
    wire height associated with the sublimation of material from the
    sidewall facets. The work presented furthers the development of the
    mechanisms needed to promote high quality substrate-based vertically
    aligned CdTe nanowires. With our present understanding of the growth
    mechanism being a combination of selective area epitaxy and a catalytically
    driven vapour-liquid-solid growth mode, these results also raise
    the intriguing possibility of employing this growth mode in other
    material systems in an effort to produce superior nanowires.},

  journal = {Nanotechnology},
  pmid = {21825689},
  publisher = {Bristol, UK: IOP Pub., c1990-}
}

@ARTICLE{Neretina2009b,
  author = {Neretina, S. and Hughes, RA and Britten, JF and Sochinskii, NV and
    Preston, JS and Mascher, P.},
  title = {{The role of substrate surface termination in the deposition of (111)
    CdTe on (0001) sapphire}},
  year = {2009},
  volume = {96},
  number = {2},
  pages = {429--433},
  issn = {0947-8396},
  doi = {10.1007/s00339-009-5285-0},


  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Neretina2009a,
  author = {Neretina, S and Hughes, RA and Devenyi, GA and Sochinskii, NV and
    Preston, JS and Mascher, P},
  title = {{Atypical grain growth for (2 1 1) CdTe films deposited on surface
    reconstructed (1 0 0) SrTiO3 substrates}},
  year = {2009},
  volume = {255},
  number = {11},
  pages = {5674--5681},
  issn = {0169-4332},
  doi = {10.1016/j.apsusc.2008.12.050},


  journal = {Applied Surface Science},
  keywords = {surface reconstruction},
  publisher = {Elsevier}
}

@ARTICLE{Neretina2006,
  author = {Neretina, S. and Zhang, Q. and Hughes, R. a. and Britten, J. F. and
    Sochinskii, N. V. and Preston, J. S. and Mascher, P.},
  title = {{The role of lattice mismatch in the deposition of CdTe thin films}},
  year = {2006},
  volume = {35},
  number = {6},
  month = jun,
  pages = {1224--1230},
  issn = {0361-5235},
  doi = {10.1007/s11664-006-0245-3},

  journal = {Journal of Electronic Materials},
  keywords = {cadmium telluride,cdte,pld,pulsed laser deposition,texture analysis,x-ray
    diffraction}
}

@ARTICLE{Neretina2006a,
  author = {Neretina, S. and Zhang, Q. and Hughes, R. a. and Britten, J. F. and
    Sochinskii, N. V. and Preston, J. S. and Mascher, P.},
  title = {{The role of lattice mismatch in the deposition of CdTe thin films}},
  year = {2006},
  volume = {35},
  number = {6},
  month = jun,
  pages = {1224--1230},
  issn = {0361-5235},
  doi = {10.1007/s11664-006-0245-3},

  journal = {Journal of Electronic Materials},
  keywords = {cadmium telluride,cdte,pld,pulsed laser deposition,texture analysis,x-ray
    diffraction}
}

@ARTICLE{Neumann1986,
  author = {Neumann, D. a.},
  title = {{Structural properties of {GaAs} on Si and Ge substrates}},
  year = {1986},
  volume = {4},
  number = {2},
  month = mar,
  pages = {642},
  issn = {0734211X},
  doi = {10.1116/1.583585},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Neumann1986a,
  author = {Neumann, D. A.},
  title = {{Structural properties of {GaAs} on Si and Ge substrates}},
  year = {1986},
  volume = {4},
  number = {2},
  month = mar,
  pages = {642},
  issn = {0734211X},
  doi = {10.1116/1.583585},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Neumann1987,
  author = {Neumann, D. A. and Zabel, H. and Fischer, R. and Morkoç, H.},
  title = {{Structural properties of {GaAs} on (001) oriented Si and Ge substrates}},
  year = {1987},
  volume = {61},
  number = {3},
  pages = {1023},
  issn = {00218979},
  doi = {10.1063/1.338192},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Neumann1987a,
  author = {Neumann, D. A. and Zabel, H. and Fischer, R. and Morkoç, H.},
  title = {{Structural properties of {GaAs} on (001) oriented Si and Ge substrates}},
  year = {1987},
  volume = {61},
  number = {3},
  pages = {1023},
  issn = {00218979},
  doi = {10.1063/1.338192},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Nguyen2004,
  author = {Nguyen, T. and Varhue, W. and Adams, E. and Lavoie, M. and Mongeon,
    S.},
  title = {{Growth of heteroepitaxial GaSb thin films on Si(100) substrates}},
  year = {2004},
  volume = {19},
  number = {8},
  pages = {2315--2321},
  issn = {0884-2914},
  doi = {10.1557/JMR.2004.0307},


  journal = {Journal of Materials Research}
}

@ARTICLE{Nichiporuk2005,
  author = {Nichiporuk, O. and Kaminski, A. and Skryshevsky, V. and Litvinenko,
    S.},
  title = {{MIS-stimulated back-surface passivation of interdigitated back-contacts
    solar cells}},
  year = {2005},
  volume = {87},
  number = {1-4},
  pages = {549--555},
  doi = {10.1016/j.solmat.2004.08.018},


  journal = {Sol. Energy Mater. Sol. Cells},
  keywords = {capture cross section,field effect,kiev,radiophysics department,solar
    cell,taras shevchenko university,thin film,volodimyrska,\~{a} corresponding
    author},
  publisher = {Elsevier}
}

@ARTICLE{Nikoobakht2003,
  author = {Nikoobakht, Babak and El-Sayed, Mostafa},
  title = {{Preparation and Growth Mechanism of Gold Nanorods (NRs) Using Seed-Mediated
    Growth Method}},
  year = {2003},
  volume = {15},
  number = {10},
  month = jan,
  pages = {1957--1962},
  doi = {10.1021/cm020732l},
  annote = {doi: 10.1021/cm020732l; M3: doi: 10.1021/cm020732l},
  isbn = {0897-4756},
  journal = {Chemistry of Materials},
  publisher = {American Chemical Society}
}

@ARTICLE{Noge1987,
  author = {Noge, H},
  title = {{Molecular beam epitaxial growth of a {GaAs} layer free from antiphase
    domains on an exactly (100)-oriented Si substrate preheated at 1000°C}},
  year = {1987},
  volume = {83},
  number = {3},
  month = jun,
  pages = {431--436},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90306-X},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Noge1988,
  author = {Noge, H. and Kano, H. and Hashimoto, M. and Igarashi, I.},
  title = {{Antiphase domains in {GaAs} grown on a (001)-oriented Si substrate
    by molecular-beam epitaxy}},
  year = {1988},
  volume = {64},
  number = {4},
  pages = {2246},
  issn = {00218979},
  doi = {10.1063/1.341698},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Noge1988a,
  author = {Noge, H. and Kano, H. and Hashimoto, M. and Igarashi, I.},
  title = {{Antiphase domains in {GaAs} grown on a (001)-oriented Si substrate
    by molecular-beam epitaxy}},
  year = {1988},
  volume = {64},
  number = {4},
  pages = {2246--2248},
  issn = {00218979},
  doi = {10.1063/1.341698},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Noge1987a,
  author = {Noge, H. and Kano, H. and Kato, T. and Hashimoto, M. and Igarashi,
    I.},
  title = {{Molecular beam epitaxial growth of a {GaAs} layer free from antiphase
    domains on an exactly (100)-oriented Si substrate preheated at 1000°C}},
  year = {1987},
  volume = {83},
  number = {3},
  month = jun,
  pages = {431--436},
  issn = {00220248},
  doi = {10.1016/0022-0248(87)90306-X},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Noguera2000,
  author = {Noguera, Claudine},
  title = {{Polar oxide surfaces}},
  year = {2000},
  volume = {12},
  number = {31},
  month = aug,
  pages = {R367--R410},
  issn = {0953-8984},
  doi = {10.1088/0953-8984/12/31/201},


  journal = {Journal of Physics: Condensed Matter}
}

@BOOK{Oda2007,
  author = {Oda, Osamu},
  title = {{Compound Semiconductor Bulk Materials and Characterizations}},
  year = {2007},
  publisher = {World Scientific},
  isbn = {981-02-1728-5},
  pages = {556},
  address = {Singapore}
}

@ARTICLE{Okada1991,
  author = {Okada, Y. and Shimomura, H. and Sugaya, T. and Kawabe, M.},
  title = {{Low-temperature substrate annealing of vicinal Si (100) for epitaxial
    growth of {GaAs} on Si}},
  year = {1991},
  volume = {30},
  number = {part 1},
  pages = {3774--3776},
  issn = {0021-4922},


  journal = {Japanese journal of applied physics}
}

@ARTICLE{Okada1991a,
  author = {Okada, Y. and Shimomura, H. and Sugaya, T. and Kawabe, M.},
  title = {{Low-temperature substrate annealing of vicinal Si (100) for epitaxial
    growth of {GaAs} on Si}},
  year = {1991},
  volume = {30},
  number = {part 1},
  pages = {3774--3776},
  issn = {0021-4922},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Oldenburg1998,
  author = {Oldenburg, S J and Averitt, R D and Westcott, S L and Halas, N J},
  title = {{Nanoengineering of optical resonances}},
  year = {1998},
  volume = {288},
  number = {2-4},
  pages = {243--247},

  isbn = {0009-2614},
  journal = {Chemical Physics Letters}
}

@ARTICLE{Olsen1975,
  author = {Olsen, G. H. and Smith, R. T.},
  title = {{Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown
    III-V structures}},
  year = {1975},
  volume = {31},
  number = {2},
  month = oct,
  pages = {739--747},
  issn = {00318965},
  doi = {10.1002/pssa.2210310247},
  annote = {Another dislocation model. I don't think this is a valid explanation.},

  journal = {Physica Status Solidi (a)}
}

@ARTICLE{Onodera2009,
  author = {Onodera, Chikara and Yoshida, Masaaki and Taguchi, Tsunemasa},
  title = {{Photoluminescence and Reflectance Spectra of CdTe films on {GaAs}(100)
    Substrates}},
  year = {2009},
  volume = {48},
  number = {11},
  month = nov,
  pages = {111104},
  issn = {0021-4922},
  doi = {10.1143/JJAP.48.111104},

  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Onodera2009a,
  author = {Onodera, Chikara and Yoshida, Masaaki and Taguchi, Tsunemasa},
  title = {{Photoluminescence and Reflectance Spectra of CdTe films on {GaAs}(100)
    Substrates}},
  year = {2009},
  volume = {48},
  number = {11},
  month = nov,
  pages = {111104},
  issn = {0021-4922},
  doi = {10.1143/JJAP.48.111104},

  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Ou-Yang1989,
  author = {Ou-Yang, Zhong-can and Helfrich, Wolfgang},
  title = {{Bending energy of vesicle membranes: General expressions for the
    first, second, and third variation of the shape energy and applications
    to spheres and cylinders}},
  year = {1989},
  volume = {39},
  number = {10},
  pages = {5280},
  doi = {10.1103/PhysRevA.39.5280},
  journal = {Physical Review A},
  publisher = {American Physical Society}
}

@ARTICLE{Ou-Yang1987,
  author = {Ou-Yang, Zhong-can and Helfrich, W},
  title = {{Instability and Deformation of a Spherical Vesicle by Pressure}},
  year = {1987},
  volume = {59},
  number = {21},
  pages = {2486},

  doi = {10.1103/PhysRevLett.59.2486},
  journal = {Physical Review Letters},
  publisher = {American Physical Society}
}

@ARTICLE{Perez-Juste2004,
  author = {P\'{e}rez-Juste, J and Liz-Marz\'{a}n, L M and Carnie, S and Chan,
    D Y C and Mulvaney, P},
  title = {{Electric-Field-Directed Growth of Gold Nanorods in Aqueous Surfactant
    Solutions}},
  year = {2004},
  volume = {14},
  number = {6},
  pages = {571--579},
  doi = {10.1002/adfm.200305068},
  address = {School of Chemistry, University of Melbourne, Parkville, VIC, 3010,
    Australia; Departamento de Qu\'{\i}mica F\'{\i}sica, Universidade
    de Vigo, Vigo, 36200, Spain; Dept. Maths and Statistics, University
    of Melbourne, Parkville, VIC, 3010, Australia},
  isbn = {1616-3028},
  journal = {Advanced Functional Materials}
}

@ARTICLE{Paillier2005,
  author = {Paillier, Jérôme and Roué, Lionel},
  title = {{Nanostructured Palladium Thin Films Prepared by Pulsed Laser Deposition}},
  year = {2005},
  volume = {152},
  number = {1},
  pages = {E1},
  issn = {00134651},
  doi = {10.1149/1.1825952},

  journal = {Journal of The Electrochemical Society}
}

@ARTICLE{Paillier2005a,
  author = {Paillier, Jérôme and Roué, Lionel},
  title = {{Nanostructured Palladium Thin Films Prepared by Pulsed Laser Deposition}},
  year = {2005},
  volume = {152},
  number = {1},
  pages = {E1},
  issn = {00134651},
  doi = {10.1149/1.1825952},

  journal = {Journal of The Electrochemical Society}
}

@ARTICLE{Parfenyuk2009,
  author = {Parfenyuk, O A and Ilashchuk, M I and Ulyanitsky, K S},
  title = {{Formation of ohmic contacts to low-resistivity Cd1 − x Mg x Te alloys
    for photovolatic applications}},
  year = {2009},
  volume = {42},
  number = {11},
  month = jan,
  pages = {1286--1288},
  issn = {1063-7826},
  doi = {10.1134/S1063782608110079},
  annote = { From Duplicate 1 ( Formation of ohmic contacts to low-resistivity
    Cd1 − x Mg x Te alloys for photovolatic applications - Parfenyuk,
    O A; Ilashchuk, M I; Ulyanitsky, K S )


     From Duplicate 1 ( Formation of ohmic contacts to low-resistivity
    Cd1 − x Mg x Te alloys for photovolatic applications - Parfenyuk,
    O A; Ilashchuk, M I; Ulyanitsky, K S )






     },

  journal = {Semiconductors}
}

@BOOK{Parikh2008,
  author = {Parikh, Anuja and Li, Jian and Chen, Jie and Marsillac, Sylvain and
    Collins, R.W.},
  title = {{Optical analysis of II-VI alloys and structures for tandem PV}},
  year = {2008},
  number = {iv},
  publisher = {IEEE},
  isbn = {978-1-4244-1640-0},
  pages = {1--5},
  doi = {10.1109/PVSC.2008.4922538},

  annote = { From Duplicate 2 ( Optical analysis of II-VI alloys and structures
    for tandem PV - Parikh, Anuja; Li, Jian; Chen, Jie; Marsillac, Sylvain;
    Collins, R.W. )


     From Duplicate 2 ( Optical analysis of II-VI alloys and structures
    for tandem PV - Parikh, Anuja; Li, Jian; Chen, Jie; Marsillac, Sylvain;
    Collins, R.W. )






     },
  booktitle = {2008 33\textsuperscript{rd} IEEE Photovolatic Specialists Conference},

  issn = {0160-8371},
  keywords = {concentrating PV,high-performance PV,photovoltaics,solar},
  month = may
}

@ARTICLE{Parkinson2009,
  author = {Parkinson, Patrick and Joyce, Hannah J and Gao, Qiang and Tan, Hark
    Hoe and Zhang, Xin and Zou, Jin and Jagadish, Chennupati and Herz,
    Laura M and Johnston, Michael B},
  title = {{Carrier lifetime and mobility enhancement in nearly defect-free
    core-shell nanowires measured using time-resolved terahertz spectroscopy.}},
  year = {2009},
  volume = {9},
  number = {9},
  month = sep,
  pages = {3349--53},
  issn = {1530-6992},
  doi = {10.1021/nl9016336},

  abstract = {We have used transient terahertz photoconductivity measurements to
    assess the efficacy of two-temperature growth and core-shell encapsulation
    techniques on the electronic properties of GaAs nanowires. We demonstrate
    that two-temperature growth of the GaAs core leads to an almost doubling
    in charge-carrier mobility and a tripling of carrier lifetime. In
    addition, overcoating the GaAs core with a larger-bandgap material
    is shown to reduce the density of surface traps by 82\%, thereby
    enhancing the charge conductivity.},

  journal = {Nano letters},
  keywords = {Arsenicals,Arsenicals: chemistry,Electric Conductivity,Gallium,Gallium:
    chemistry,Materials Testing,Nanotechnology,Nanotechnology: methods,Nanowires,Nanowires:
    chemistry,Particle Size,Photochemistry,Surface Properties,Temperature,Terahertz
    Spectroscopy,Terahertz Spectroscopy: methods,Time Factors},
  pmid = {19736975}
}

@ARTICLE{Parkinson2009a,
  author = {Parkinson, Patrick and Joyce, Hannah J. and Gao, Qiang and Tan, Hark
    Hoe and Zhang, Xin and Zou, Jin and Jagadish, Chennupati and Herz,
    Laura M. and Johnston, Michael B.},
  title = {{Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free
    Core−Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy}},
  year = {2009},
  volume = {9},
  number = {9},
  month = sep,
  pages = {3349--3353},
  issn = {1530-6984},
  doi = {10.1021/nl9016336},

  journal = {Nano Letters},
  publisher = {ACS Publications}
}

@ARTICLE{Patriarche1993,
  author = {Patriarche, G. and Rivi\`{e}re, J. P. and Castaing, J. and {Tromson
    Carli}, A. and Triboulet, R. and Marfaing, Y.},
  title = {{Extended defects in II-VI semiconductor heteroepitaxial layers grown
    on {GaAs} substrates of various orientations}},
  year = {1993},
  volume = {138},
  number = {2},
  month = aug,
  pages = {437--443},
  issn = {00318965},
  doi = {10.1002/pssa.2211380211},
  annote = {So this paper has the same geometrical constraints idea as us, but
    so far just applied to (113) substrates. The differences between
    the A and B substrates is pretty interesting though. Does not affect
    us however.},

  journal = {Physica Status Solidi (a)}
}

@ARTICLE{Pehlke1991,
  author = {Pehlke, E and Tersoff, J},
  title = {{Phase diagram of vicinal Si (001) surfaces}},
  year = {1991},
  volume = {67},
  number = {10},
  pages = {1290--1293},
  doi = {10.1103/PhysRevLett.67.1290},

  journal = {Physical Review Letters}
}

@ARTICLE{Pehlke1991a,
  author = {Pehlke, E and Tersoff, J},
  title = {{Phase diagram of vicinal Si (001) surfaces}},
  year = {1991},
  volume = {67},
  number = {10},
  pages = {1290--1293},
  doi = {10.1103/PhysRevLett.67.1290},

  journal = {Physical Review Letters}
}

@ARTICLE{Pei2001,
  author = {Pei, YT and {De Hosson}, J.T.M.},
  title = {{Five-fold branched Si particles in laser clad AlSi functionally
    graded materials}},
  year = {2001},
  volume = {49},
  number = {4},
  pages = {561--571},
  issn = {1359-6454},


  journal = {Acta materialia},
  keywords = {aluminium alloys,microstructure,tem,transmission electron microscopy,twinning},
  publisher = {Elsevier}
}

@ARTICLE{Perea2008,
  author = {Perea, a. and Gonzalo, J. and Budtz-Jo̸rgensen, C. and Epurescu,
    G. and Siegel, J. and Afonso, C. N. and García-López, J.},
  title = {{Quantification of self-sputtering and implantation during pulsed
    laser deposition of gold}},
  year = {2008},
  volume = {104},
  number = {8},
  pages = {084912},
  issn = {00218979},
  doi = {10.1063/1.2988145},


  journal = {Journal of Applied Physics}
}

@INPROCEEDINGS{Petres2009,
  author = {Petres, R. and Mihailetchi, VD and Maier, J and Keller, S and Pernau,
    T and P},
  title = {{SILICON SURFACE PASSIVATION BY INDUSTRIAL LOW FREQUENCY PECVD FILMS-PORPERTIES
    AND PERFORMANCE OF SICX AND SIOXNY}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  pages = {1613},
  doi = {10.4229/24thEUPVSEC2009-2CV.2.54},


  keywords = {passivation,silicon carbide,sion}
}

@ARTICLE{Petritz1958,
  author = {Petritz, Richard},
  title = {{Theory of an Experiment for Measuring the Mobility and Density of
    Carriers in the Space-Charge Region of a Semiconductor Surface}},
  year = {1958},
  volume = {110},
  number = {6},
  month = jun,
  pages = {1254--1262},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.110.1254},

  journal = {Physical Review}
}

@ARTICLE{Pieczonka2008,
  author = {Pieczonka, Nicholas P W and Aroca, Ricardo F},
  title = {{Single molecule analysis by surfaced-enhanced Raman scattering.}},
  year = {2008},
  volume = {37},
  number = {5},
  pages = {946--954},
  doi = {10.1039/b709739p},
  annote = {Our main objective in this tutorial review is to provide insight
    into some of the questions surrounding single molecule detection
    (SMD) using surface-enhanced Raman scattering (SERS) and surface-enhanced
    resonance Raman scattering (SERRS). Discovered thirty years ago,
    SERS is now a powerful analytical tool, strongly tied to plasmonics,
    a field that encompasses and profits from the optical enhancement
    found in nanostructures that support localized plasmon excitations.
    The spectrum of the single molecule carries the quantum fingerprints
    of the system modulated by the molecule-nanostructure interactions
    and the electronic resonances that may result under laser excitation.
    This information is embedded in vibrational band parameters. The
    dynamics and the molecular environment will affect the bandwidth
    of the observed Raman bands. In addition, the localized surface plasmon
    resonances (LSPR) empower the nanostructure with a number of optical
    properties that will also leave their mark on the observed inelastic
    scattering process. Therefore, controlling size, shape and the formation
    of the aggregation state (or fractality) of certain metallic nanostructures
    becomes a main task for experimental SERS/SERRS. This molecule-nanostructure
    coupling may, inevitably, lead to spectral fluctuations, increase
    photobleaching or photochemistry. An attempt is made here to guide
    the interpretation of this wealth of information when approaching
    the single molecule regime.},
  journal = {Chemical Society Reviews}
}

@ARTICLE{Pillai2007a,
  author = {Pillai, S. and Catchpole, K. R. and Trupke, T. and Green, M. a.},
  title = {{Surface plasmon enhanced silicon solar cells}},
  year = {2007},
  volume = {101},
  number = {9},
  pages = {093105},
  issn = {00218979},
  doi = {10.1063/1.2734885},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Pinardi1998,
  author = {Pinardi, K. and Jain, Uma and Jain, S. C. and Maes, H. E. and {Van
    Overstraeten}, R. and Willander, M.},
  title = {{Critical thickness and strain relaxation in lattice mismatched II-VI
    semiconductor layers}},
  year = {1998},
  volume = {83},
  number = {9},
  pages = {4724},
  issn = {00218979},
  doi = {10.1063/1.367261},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Pinardi1998a,
  author = {Pinardi, K. and Jain, Uma and Jain, S. C. and Maes, H. E. and {Van
    Overstraeten}, R. and Willander, M.},
  title = {{Critical thickness and strain relaxation in lattice mismatched II-VI
    semiconductor layers}},
  year = {1998},
  volume = {83},
  number = {9},
  pages = {4724},
  issn = {00218979},
  doi = {10.1063/1.367261},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Pitarke2007,
  author = {Pitarke, J M and Silkin, V M and Chulkov, E V and Echenique, P M},
  title = {{Theory of surface plasmons and surface-plasmon polaritons}},
  year = {2007},
  volume = {70},
  number = {1},
  month = jan,
  pages = {1--87},
  issn = {0034-4885},
  doi = {10.1088/0034-4885/70/1/R01},


  journal = {Reports on Progress in Physics}
}

@PHDTHESIS{Plagwitz2007,
  author = {Plagwitz, H.},
  title = {{Surface passivation of crystalline silicon solar cells by amorphous
    silicon film}},
  year = {2007},

  school = {University of Hannover}
}

@ARTICLE{Ponce1981,
  author = {Ponce, F. a.},
  title = {{Native tellurium dioxide layer on cadmium telluride: A high-resolution
    electron microscopy study}},
  year = {1981},
  volume = {39},
  number = {12},
  pages = {951},
  issn = {00036951},
  doi = {10.1063/1.92623},


  journal = {Applied Physics Letters}
}

@ARTICLE{Ponce1981a,
  author = {Ponce, F. a.},
  title = {{Native tellurium dioxide layer on cadmium telluride: A high-resolution
    electron microscopy study}},
  year = {1981},
  volume = {39},
  number = {12},
  pages = {951},
  issn = {00036951},
  doi = {10.1063/1.92623},


  journal = {Applied Physics Letters}
}

@ARTICLE{PONPON1985,
  author = {PONPON, J},
  title = {{A review of ohmic and rectifying contacts on cadmium telluride}},
  year = {1985},
  volume = {28},
  number = {7},
  month = jul,
  pages = {689--706},
  issn = {00381101},
  doi = {10.1016/0038-1101(85)90019-X},

  annote = { From Duplicate 1 ( A review of ohmic and rectifying contacts on
    cadmium telluride - PONPON, J )


     From Duplicate 1 ( A review of ohmic and rectifying contacts on cadmium
    telluride - PONPON, J )






     },

  journal = {Solid-State Electronics}
}

@ARTICLE{Posthill1988,
  author = {Posthill, J. B. and Tam, J. C. L. and Das, K. and Humphreys, T. P.
    and Parikh, N. R.},
  title = {{Observation of antiphase domain boundaries in {GaAs} on silicon
    by transmission electron microscopy}},
  year = {1988},
  volume = {53},
  number = {13},
  pages = {1207--1209},

  journal = {Applied Physics Letters}
}

@ARTICLE{Preuss1995,
  author = {Preuss, S and Demchuk, A and Stuke, M},
  title = {{Sub-picosecond UV laser ablation of metals}},
  year = {1995},
  volume = {61},
  number = {1},
  pages = {33--37},
  issn = {0947-8396},


  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Preuss1995a,
  author = {Preuss, S and Demchuk, A and Stuke, M},
  title = {{Sub-picosecond UV laser ablation of metals}},
  year = {1995},
  volume = {61},
  number = {1},
  pages = {33--37},
  issn = {0947-8396},


  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@ARTICLE{Proessdorf2010,
  author = {Proessdorf, Andre and Grosse, Frank and Romanyuk, Oleksandr and Braun,
    Wolfgang and Jenichen, Bernd and Trampert, Achim and Riechert, Henning},
  title = {{Interface engineering for improved growth of GaSb on Si(111)}},
  year = {2011},
  volume = {323},
  number = {1},
  month = dec,
  pages = {401--404},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2010.11.167},


  journal = {Journal of Crystal Growth},
  keywords = {A1. Defects,A1. Reflection high-energy electron diffraction,A1. X-ray
    diffraction,A3. Molecular beam epitaxy,B1. Antimonides,B2. Semiconducting
    III-V materials},
  publisher = {Elsevier}
}

@ARTICLE{Proessdorf2010a,
  author = {Proessdorf, Andre and Grosse, Frank and Romanyuk, Oleksandr and Braun,
    Wolfgang and Jenichen, Bernd and Trampert, Achim and Riechert, Henning},
  title = {{Interface engineering for improved growth of GaSb on Si(111)}},
  year = {2010},
  month = dec,
  pages = {1--4},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2010.11.167},


  journal = {Journal of Crystal Growth},
  keywords = {A1. Defects,A1. Reflection high-energy electron diffraction,A1. X-ray
    diffraction,A3. Molecular beam epitaxy,B1. Antimonides,B2. Semiconducting
    III-V materials},
  publisher = {Elsevier}
}

@ARTICLE{Pukite1987,
  author = {Pukite, P R and Cohen, P I.},
  title = {{Multilayer step formation after As adsorption on Si (100): Nucleation
    of {GaAs} on vicinal Si}},
  year = {1987},
  volume = {50},
  number = {24},
  pages = {1739},
  issn = {00036951},
  doi = {10.1063/1.97733},


  journal = {Applied Physics Letters}
}

@ARTICLE{Pukite1987a,
  author = {Pukite, P R and Cohen, P I.},
  title = {{Multilayer step formation after As adsorption on Si (100): Nucleation
    of {GaAs} on vicinal Si}},
  year = {1987},
  volume = {50},
  number = {24},
  pages = {1739},
  issn = {00036951},
  doi = {10.1063/1.97733},


  journal = {Applied Physics Letters}
}

@ARTICLE{Pysch2009,
  author = {Pysch, D and Mette, A and Filipovic, A and Glunz, S. W.},
  title = {{Comprehensive analysis of advanced solar cell contacts consisting
    of printed fine-line seed layers thickened by silver plating}},
  year = {2009},
  volume = {17},
  number = {2},
  pages = {101--114},
  doi = {10.1002/pip.855},
  abstract = {This work presents a detailed analysis of a new two-layer process
    to contact industrial solar cells. However, most of the results seem
    to be transferable to standard screen print paste contacts. The seed
    layer was created by a pad or screen printer and thickened by light-induced
    plating (LIP) of silver. These contact structures were investigated
    microscopically to gain a better understanding of the observed electrical
    parameters. A review of the present microscopic contact formation
    model for flat surfaces is presented. This model was extended and
    applied to surfaces textured with random pyramids. This analysis
    has revealed two new types of silver crystallites which can be described
    by a crystallographic model. The dependence of the silver crystallite
    density on the surface doping concentration was investigated. Next,
    the dependence of the contact resistance on the width of the seed
    layer was measured showing that the contact resistivity increases
    with a reduction of the seed layer width. These results have been
    further approved by an analysis of SEM images of wet-chemically etched
    contacts examining the density of crystallites and the fraction of
    removed SiNx layer. Contact resistance RC measurements before and
    after LIP of silver showed surprisingly a positive influence of the
    plating process on RC. A detailed microscopical analysis revealed
    four new possible current flow paths due to the LIP of a conventional
    contact or a seed layer. The results led to an extension of the existing
    model for a screen-printed contact. Copyright � 2008 John Wiley \&
    Sons, Ltd.},

  journal = {Prog. Photovoltaics}
}

@ARTICLE{Qi2011,
  author = {Qi, B. and Agnarsson, B. and \'{O}lafsson, S. and G\'{\i}slason,
    H.P. and G\"{o}thelid, M.},
  title = {{Room temperature deposition of self-assembled Al nanoclusters on
    stepped sapphire (0001) surface and subsequent nitridation}},
  year = {2011},
  volume = {520},
  number = {1},
  month = oct,
  pages = {64--73},
  issn = {00406090},
  doi = {10.1016/j.tsf.2011.06.041},


  journal = {Thin Solid Films}
}

@ARTICLE{Qi2011a,
  author = {Qi, B. and Agnarsson, B. and \'{O}lafsson, S. and G\'{\i}slason,
    H.P. and G\"{o}thelid, M.},
  title = {{Room temperature deposition of self-assembled Al nanoclusters on
    stepped sapphire (0001) surface and subsequent nitridation}},
  year = {2011},
  volume = {520},
  number = {1},
  month = oct,
  pages = {64--73},
  issn = {00406090},
  doi = {10.1016/j.tsf.2011.06.041},


  journal = {Thin Solid Films}
}

@ARTICLE{Qu2001,
  author = {Qu, B. and Zheng, X. H. and Wang, Y. T. and Lin, S. M. and Yang,
    H. and Liang, J. W.},
  title = {{Polarity dependence of hexagonal inclusions and cubic twins in GaN/{GaAs}(001)
    epilayers measured by conventional X-ray pole figure and grazing
    incident diffraction pole figure}},
  year = {2001},
  volume = {226},
  number = {1},
  month = jun,
  pages = {57--61},
  issn = {00220248},
  doi = {10.1016/S0022-0248(01)01366-5},


  journal = {Journal of Crystal Growth},
  keywords = {a1,a3,b1,b2,characterization,defects,metalorganic vapor phase epitaxy,nitrides,semiconducting
    iii,v materials,x-ray diffraction}
}

@ARTICLE{Rajkumar1990,
  author = {Rajkumar, K. C. and Madhukar, A. and Liu, J. K. and Grunthaner, F.
    J.},
  title = {{Observation of a correlation between twin orientation and substrate
    step direction in thin {GaAs} films grown on intentionally misoriented
    Si (100)}},
  year = {1990},
  volume = {56},
  number = {12},
  pages = {1160},
  issn = {00036951},
  doi = {10.1063/1.102549},


  journal = {Applied Physics Letters}
}

@ARTICLE{Rajkumar1990a,
  author = {Rajkumar, K. C. and Madhukar, A. and Liu, J. K. and Grunthaner, F.
    J.},
  title = {{Observation of a correlation between twin orientation and substrate
    step direction in thin {GaAs} films grown on intentionally misoriented
    Si (100)}},
  year = {1990},
  volume = {56},
  number = {12},
  pages = {1160},
  issn = {00036951},
  doi = {10.1063/1.102549},


  journal = {Applied Physics Letters}
}

@ARTICLE{Rakhshani1997,
  author = {Rakhshani, a. E.},
  title = {{Electrodeposited CdTe—optical properties}},
  year = {1997},
  volume = {81},
  number = {12},
  pages = {7988},
  issn = {00218979},
  doi = {10.1063/1.365402},

  annote = { From Duplicate 2 ( Electrodeposited CdTe—optical properties - Rakhshani,
    a. E. )


     From Duplicate 2 ( Electrodeposited CdTe—optical properties - Rakhshani,
    a. E. )






     },

  journal = {Journal of Applied Physics}
}

@ARTICLE{Rang2008,
  author = {Rang, Matthias and Jones, Andrew C and Zhou, Fei and Li, Zhi-Yuan
    and Wiley, Benjamin J and Xia, Younan and Raschke, Markus B},
  title = {{Optical near-field mapping of plasmonic nanoprisms.}},
  year = {2008},
  volume = {8},
  number = {10},
  month = oct,
  pages = {3357--63},
  issn = {1530-6984},
  doi = {10.1021/nl801808b},

  abstract = {The optical local-field enhancement on nanometer length scales provides
    the basis for plasmonic metal nanostructures to serve as molecular
    sensors and as nanophotonic devices. However, particle morphology
    and the associated surface plasmon resonance alone do not uniquely
    reflect the important details of the local field distribution. Here,
    we use interferometric homodyne tip-scattering near-field microscopy
    for plasmonic near-field imaging of crystalline triangular silver
    nanoprisms. Strong spatial field variation on lengths scales as short
    as 20 nm are observed sensitively depending on structural details
    and environment. The poles of the dipole and quadrupole plasmon modes,
    as identified by phase-sensitive probing and calculations performed
    in the discrete dipole approximation (DDA), reflect the particle
    symmetry. Together with the observation that the largest enhancement
    is not necessarily found to be associated with the tips of the nanoprisms,
    our results provide critical information for the selection of particle
    geometries as building blocks for plasmonic device applications.},

  journal = {Nano letters},
  keywords = {Crystallization,Equipment Design,Light,Microscopy,Microscopy, Atomic
    Force,Microscopy: methods,Nanoparticles,Nanoparticles: chemistry,Nanostructures,Nanostructures:
    chemistry,Nanotechnology,Nanotechnology: methods,Optics and Photonics,Silver,Silver:
    chemistry,Spectrum Analysis, Raman,Spectrum Analysis, Raman: methods,Surface
    Plasmon Resonance,Surface Plasmon Resonance: instrumentation,Surface
    Plasmon Resonance: methods},
  pmid = {18788789}
}

@ARTICLE{Rao2009,
  author = {Rao, S.R. and Shintri, S.S. and Bhat, I.B.},
  title = {{Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211)
    Si Using Ge Interfacial Layer}},
  year = {2009},
  volume = {38},
  number = {8},
  month = feb,
  pages = {1618--1623},
  issn = {0361-5235},
  doi = {10.1007/s11664-009-0719-1},

  journal = {Journal of Electronic Materials},
  keywords = {211,arsenic,cdte,germanium,movpe,orientation,silicon}
}

@ARTICLE{Rao2009a,
  author = {Rao, S.R. and Shintri, S.S. and Bhat, I.B.},
  title = {{Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211)
    Si Using Ge Interfacial Layer}},
  year = {2009},
  volume = {38},
  number = {8},
  month = feb,
  pages = {1618--1623},
  issn = {0361-5235},
  doi = {10.1007/s11664-009-0719-1},

  journal = {Journal of Electronic Materials},
  keywords = {211,arsenic,cdte,germanium,movpe,orientation,silicon}
}

@ARTICLE{Rasmussen2012,
  author = {Rasmussen, Morten K and Meinander, Kristoffer and Besenbacher, Flemming
    and Lauritsen, Jeppe V},
  title = {{Noncontact atomic force microscopy study of the spinel MgAl(2)O(4)(111)
    surface.}},
  year = {2012},
  volume = {3},
  number = {111},
  month = jan,
  pages = {192--7},
  issn = {2190-4286},
  doi = {10.3762/bjnano.3.21},

  abstract = {Based on high-resolution noncontact atomic force microscopy (NC-AFM)
    experiments we reveal a detailed structural model of the polar (111)
    surface of the insulating ternary metal oxide, MgAl(2)O(4) (spinel).
    NC-AFM images reveal a 6√3×6√3R30° superstructure on the surface
    consisting of patches with the original oxygen-terminated MgAl(2)O(4)(111)
    surface interrupted by oxygen-deficient areas. These observations
    are in accordance with previous theoretical studies, which predict
    that the polarity of the surface can be compensated by removal of
    a certain fraction of oxygen atoms. However, instead of isolated
    O vacancies, it is observed that O is removed in a distinct pattern
    of line vacancies reflected by the underlying lattice structure.
    Consequently, by the creation of triangular patches in a 6√3×6√3R30°
    superstructure, the polar-stabilization requirements are met.},

  journal = {Beilstein journal of nanotechnology},
  keywords = {192,197,2012,3,aluminium oxide,beilstein j,metal oxide surfaces,microscopy,nanotechnol,nc-afm,noncontact
    atomic force,polar surfaces,reconstructions,spinel},
  pmid = {22496991}
}

@ARTICLE{Ravash2011,
  author = {Ravash, R. and Blaesing, J. and Hempel, T. and Noltemeyer, M. and
    Dadgar, A. and Christen, J. and Krost, A.},
  title = {{Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar
    gallium nitride structures on high index silicon}},
  year = {2011},
  volume = {248},
  number = {3},
  month = mar,
  pages = {594--599},
  issn = {03701972},
  doi = {10.1002/pssb.201046313},

  journal = {Physica Status Solidi (B)},
  keywords = {iii,movpe,texture,v semiconductors,x-ray diffraction}
}

@ARTICLE{Recart2007,
  author = {Recart, F. and Freire, I. and P\'{e}rez, L. and Lago-Aurrekoetxea,
    R. and Jimeno, J.C. and Bueno, G.},
  title = {{Screen printed boron emitters for solar cells}},
  year = {2007},
  volume = {91},
  number = {10},
  month = jun,
  pages = {897--902},
  issn = {09270248},
  doi = {10.1016/j.solmat.2007.02.005},


  journal = {Solar Energy Materials and Solar Cells},
  keywords = {boron emitters,industrial solar cells,screen printing}
}

@ARTICLE{Reshchikov2005,
  author = {Reshchikov, M.A. and Morko\c{c}, H.},
  title = {{Luminescence properties of defects in GaN}},
  year = {2005},
  volume = {97},
  pages = {061301},


  journal = {J. Appl. Phys.}
}

@ARTICLE{Resta2009,
  author = {Resta, V. and Afonso, C. and Piscopiello, E. and {Van Tendeloo},
    G.},
  title = {{Role of substrate on nucleation and morphology of gold nanoparticles
    produced by pulsed laser deposition}},
  year = {2009},
  volume = {79},
  number = {23},
  month = jun,
  pages = {3--8},
  issn = {1098-0121},
  doi = {10.1103/PhysRevB.79.235409},

  journal = {Physical Review B}
}

@ARTICLE{Reynard1966,
  author = {Reynard, D L and Andrew, a},
  title = {{Improvement of silicon solar cell performance through the use of
    thin film coatings.}},
  year = {1966},
  volume = {5},
  number = {1},
  month = jan,
  pages = {23--8},
  issn = {0003-6935},

  abstract = {Thin film coatings are used universally in solar cell power systems
    for spacecraft. Antireflective coatings are used to increase the
    amount of useful energy reaching the active surface of the cell.
    Multilayer interference filters are employed to reject unwanted portions
    of the solar spectrum in order to reduce equilibrium temperature
    and to prevent ultraviolet damage. Glass covers are used in conjunction
    with these coatings for the purpose of increasing the thermal emittance
    of the surface. Appreciable performance increases can be obtained
    through the uses of these filters and coatings.},

  journal = {Applied optics},
  pmid = {20048779}
}

@INPROCEEDINGS{StefanieRiegelSebastianGlogerBerndRaabe2009,
  author = {Riegel, Stefanie and Gloger, Sebastian and Raabe, Bernd and Hahn,
    G.},
  title = {{COMPARISON OF THE PASSIVATION QUALITY OF BORON AND {ALU}MINUM BSF
    FOR WAFERS OF VARYING THICKNESS}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {1596},

  keywords = {boron back surface field,passivation,wafer thickness}
}

@ARTICLE{Riesz1994,
  author = {Riesz, Ferenc},
  title = {{Rotated tilting in lattice-mismatched heteroepitaxial systems}},
  year = {1994},
  volume = {140},
  number = {1-2},
  month = jun,
  pages = {213--218},
  issn = {00220248},
  doi = {10.1016/0022-0248(94)90515-0},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Riesz1994a,
  author = {Riesz, Ferenc},
  title = {{Rotated tilting in lattice-mismatched heteroepitaxial systems}},
  year = {1994},
  volume = {140},
  number = {1-2},
  month = jun,
  pages = {213--218},
  issn = {00220248},
  doi = {10.1016/0022-0248(94)90515-0},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Rinio1998,
  author = {Rinio, Markus and M\"{o}ller, Hans Joachim and Werner, Martina},
  title = {{LBIC Investigations of the Lifetime Degradation by Extended Defects
    in Multicrystalline Solar Silicon}},
  year = {1998},
  volume = {63-64},
  pages = {115--122},
  issn = {1662-9779},
  doi = {10.4028/www.scientific.net/SSP.63-64.115},


  journal = {Solid State Phenomena}
}

@INPROCEEDINGS{Rinio1816,
  author = {Rinio, M and Yodyunyong, A. and Pirker, M. and Zhang, C. and G$\backslash$$\backslash$"unther,
    D. and Botchak, P. and Keipert, S. and Borchert, D. and Heuer, M.
    and Montesdeoca-Santana, A.},
  title = {{New results using a low temperature anneal in processing of multicrystalline
    solar cells}},
  booktitle = {Proceedings of the 24\textsuperscript{th} European Photovoltaic Solar
    Energy Conference},
  year = {1816},
  volume = {1819},
  number = {10.4229},
  pages = {3--6},

  keywords = {annealing,cell processing,defects,lbic,multi-crystalline,recombination}
}

@ARTICLE{Rioux1993,
  author = {Rioux, Dennis and Niles, David W and Höchst, Hartmut},
  title = {{ZnTe: A potential interlayer to form low resistance back contacts
    in CdS/CdTe solar cells}},
  year = {1993},
  volume = {73},
  number = {12},
  pages = {8381},
  issn = {00218979},
  doi = {10.1063/1.353406},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Rioux1993a,
  author = {Rioux, Dennis and Niles, David W and Höchst, Hartmut},
  title = {{ZnTe: A potential interlayer to form low resistance back contacts
    in CdS/CdTe solar cells}},
  year = {1993},
  volume = {73},
  number = {12},
  pages = {8381},
  issn = {00218979},
  doi = {10.1063/1.353406},

  annote = { From Duplicate 1 ( ZnTe: A potential interlayer to form low resistance
    back contacts in CdS/CdTe solar cells - Rioux, Dennis; Niles, David
    W; Höchst, Hartmut )


     From Duplicate 2 ( ZnTe: A potential interlayer to form low resistance
    back contacts in CdS/CdTe solar cells - Rioux, Dennis; Niles, David
    W; Höchst, Hartmut )


     From Duplicate 2 ( ZnTe: A potential interlayer to form low resistance
    back contacts in CdS/CdTe solar cells - Rioux, Dennis; Niles, David
    W; Höchst, Hartmut )








     },

  journal = {Journal of Applied Physics}
}

@ARTICLE{Rohatgi2005,
  author = {Rohatgi, A. and Ebong, A. and Hilali, M.M. and Meemongkolkiat, V.
    and Rounsaville, B. and Ristow, A.},
  title = {{High Efficiency Screen-Printed Solar Cells on Textured Mono-Crystalline
    Silicon}},
  year = {2005},
  pages = {15--18},


  journal = {Technology},
  keywords = {2,and requirements to reduce,cost and technology roadmaps,high,high
    efficiency silicon,screen-printed,sheet resistance emitter,textured,we
    have established guidelines},
  publisher = {Georgia Institute of Technology}
}

@ARTICLE{Rohatgi2000,
  author = {Rohatgi, A. and Ebong, A. and Yelundur, V and Ristow, A},
  title = {{Rapid thermal processing of next generation silicon solar cells}},
  year = {2000},
  volume = {8},
  number = {5},
  month = sep,
  pages = {515--527},
  issn = {1062-7995},
  doi = {10.1002/1099-159X(200009/10)8:5<515::AID-PIP351>3.0.CO;2-Q},


  journal = {Prog. Photovoltaics}
}

@ARTICLE{ROHATGI1989a,
  author = {ROHATGI, A and RINGEL, S and SUDHARSANAN, R and MEYERS, P and LIU,
    C and RAMANATHAN, V},
  title = {{Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films
    for photovoltaic applications}},
  year = {1989},
  volume = {27},
  number = {1-4},
  month = oct,
  pages = {219--230},
  issn = {03796787},
  doi = {10.1016/0379-6787(89)90030-6},

  annote = { From Duplicate 2 ( Investigation of polycrystalline CdZnTe, CdMnTe,
    and CdTe films for photovoltaic applications - ROHATGI, A; RINGEL,
    S; SUDHARSANAN, R; MEYERS, P; LIU, C; RAMANATHAN, V )


     From Duplicate 1 ( Investigation of polycrystalline CdZnTe, CdMnTe,
    and CdTe films for photovoltaic applications - ROHATGI, A; RINGEL,
    S; SUDHARSANAN, R; MEYERS, P; LIU, C; RAMANATHAN, V )






     },

  journal = {Solar Cells}
}

@ARTICLE{Romano1995,
  author = {Romano, L. and Bringans, R. and Zhou, X. and Kirk, W.},
  title = {{Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001)
    and {GaAs}/Si(001)}},
  year = {1995},
  volume = {52},
  number = {15},
  month = oct,
  pages = {11201--11205},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.52.11201},

  journal = {Physical Review B}
}

@ARTICLE{Romeo2010,
  author = {Romeo, N. and Bosio, a. and Romeo, a.},
  title = {{An innovative process suitable to produce high-efficiency CdTe/CdS
    thin-film modules}},
  year = {2010},
  volume = {94},
  number = {1},
  month = jan,
  pages = {2--7},
  issn = {09270248},
  doi = {10.1016/j.solmat.2009.06.001},

  annote = { From Duplicate 1 ( An innovative process suitable to produce high-efficiency
    CdTe/CdS thin-film modules - Romeo, N.; Bosio, a.; Romeo, a. )


     From Duplicate 1 ( An innovative process suitable to produce high-efficiency
    CdTe/CdS thin-film modules - Romeo, N.; Bosio, a.; Romeo, a. )






     },

  journal = {Solar Energy Materials and Solar Cells},
  keywords = {CdTe,Modules,Solar cells,Thin films},
  publisher = {Elsevier}
}

@ARTICLE{Romijn2008a,
  author = {Romijn, Ingrid and Cesar, I. and Koppes, Martien and Kossen, Eric
    and Weeber, Arthur},
  title = {{PASHA: A new industrial process technology enabling high efficiencies
    on thin and large mc-Si wafers}},
  year = {2008},
  month = may,
  pages = {5},
  issn = {0160-8371},
  doi = {10.1109/PVSC.2008.4922745},


  isbn = {978-1-4244-1640-0},
  journal = {33rd IEEE PVSC, San Diego, USA},
  publisher = {Ieee}
}

@ARTICLE{Rosenbaum1959,
  author = {Rosenbaum, HS and Turnbull, D and Alessandrini, ET},
  title = {{On the orientation of silicon precipitating from an Al-rich solid
    solution}},
  year = {1959},
  volume = {7},

  journal = {Acta Metallurgica}
}

@ARTICLE{Rotlevi2001a,
  author = {Rotlevi, O},
  title = {{Electroless Ni and NiTe2 ohmic contacts for CdTe/CdS PV cells}},
  year = {2001},
  volume = {387},
  number = {1-2},
  month = may,
  pages = {155--157},
  issn = {00406090},
  doi = {10.1016/S0040-6090(00)01738-7},

  annote = { From Duplicate 2 ( Electroless Ni and NiTe2 ohmic contacts for CdTe/CdS
    PV cells - Rotlevi, O )


     From Duplicate 1 ( Electroless Ni and NiTe2 ohmic contacts for CdTe/CdS
    PV cells - Rotlevi, O )






     },

  journal = {Thin Solid Films},
  keywords = {back-contacts,cdtercds,electroless ni deposition,nite 2,solar cells,stability}
}

@ARTICLE{Rubel2009,
  author = {Rubel, O. and Baranovskii, S. D.},
  title = {{Formation energies of antiphase boundaries in {GaAs} and GaP: An
    ab Initio study.}},
  year = {2009},
  volume = {10},
  number = {12},
  month = dec,
  pages = {5104--5114},
  issn = {1422-0067},
  doi = {10.3390/ijms10125104},

  abstract = {Electronic and structural properties of antiphase boundaries in group
    III-V semiconductor compounds have been receiving increased attention
    due to the potential to integration of optically-active III-V heterostructures
    on silicon or germanium substrates. The formation energies of \{110\},
    \{111\}, \{112\}, and \{113\} antiphase boundaries in GaAs and GaP
    were studied theoretically using a full-potential linearized augmented
    plane-wave density-functional approach. Results of the study reveal
    that the stoichiometric \{110\} boundaries are the most energetically
    favorable in both compounds. The specific formation energy gamma
    of the remaining antiphase boundaries increases in the order of gamma(\{113\})
    approximately gamma(\{112\}) < gamma(\{111\}), which suggests \{113\}
    and \{112\} as possible planes for faceting and annihilation of antiphase
    boundaries in GaAs and GaP.},
  annote = {Only paper to ever look at the formation energies of APBs of different
    planes in III-V. Agrees with experimental evidence of their observation
    in CTEM. Though more interestingly, looking at the units of their
    formation energies, meV/angstrom\^{}2, the units of stacking fault
    energy is mJ/m\^{}2, and working out the unit equivalents: 1 mJ/m\^{}2
    = 0.06242 meV/angstrom\^{}2},

  journal = {International Journal of Molecular Sciences},
  keywords = {III-V semiconductors,antiphase boundary,density-functional,formation
    energy,theory},
  pmid = {20054465}
}

@ARTICLE{Ruiz2006a,
  author = {Ruiz, C M and Vigil, O and Saucedo, E and Contreras-Puente, G and
    Berm\'{u}dez, V},
  title = {{Bi doped CdTe: increasing potentialities of CdTe based solar cells}},
  year = {2006},
  volume = {18},
  number = {31},
  month = aug,
  pages = {7163--7169},
  issn = {0953-8984},
  doi = {10.1088/0953-8984/18/31/011},

  annote = { From Duplicate 2 ( Bi doped CdTe: increasing potentialities of CdTe
    based solar cells - Ruiz, C M; Vigil, O; Saucedo, E; Contreras-Puente,
    G; Berm\'{u}dez, V )


     From Duplicate 2 ( Bi doped CdTe: increasing potentialities of CdTe
    based solar cells - Ruiz, C M; Vigil, O; Saucedo, E; Contreras-Puente,
    G; Berm\'{u}dez, V )






     },

  journal = {Journal of Physics: Condensed Matter}
}

@ARTICLE{Rujirawat1997,
  author = {Rujirawat, S. and Almeida, L. A. and Chen, Y. P. and Sivananthan,
    S. and Smith, D. J.},
  title = {{High quality large-area CdTe(211)B on Si(211) grown by molecular
    beam epitaxy}},
  year = {1997},
  volume = {71},
  number = {13},
  pages = {1810},
  issn = {00036951},
  doi = {10.1063/1.119406},

  annote = {Look like this measurement is ZnTe/Si, as the buffer layer is quite
    thick.},

  journal = {Applied Physics Letters}
}

@ARTICLE{Rujirawat1998,
  author = {Rujirawat, S. and Smith, D. J. and Faurie, J. P. and Neu, G. and
    Nathan, V. and Sivananthan, S.},
  title = {{Microstructural and Optical Characterization of CdTe (211)B/ZnTe/Si
    (211) Grown by Molecular Beam Epitaxy}},
  year = {1998},
  volume = {27},
  number = {9},
  pages = {1047--1052},
  annote = {I have notes!},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,dislocations,heteroepitaxy,molecular beam epitaxy,si}
}

@ARTICLE{Ryu2005,
  author = {Ryu, Y. S. and Kang, T. W. and Kim, T. W.},
  title = {{Structural properties and interfacial atomic arrangements in CdTe
    thin films grown on {GaAs} (211) B substrates}},
  year = {2005},
  volume = {40},
  number = {17},
  month = sep,
  pages = {4699--4702},
  issn = {0022-2461},
  doi = {10.1007/s10853-005-3931-2},

  annote = {These guys have a picture but don't say much.

     Played with temperature.},

  journal = {Journal of Materials Science}
}

@ARTICLE{S.IyerH.MorkocH.Zabel1989,
  author = {{S. Iyer, H. Morkoc, H. Zabel}, N. Otsuka},
  title = {{Molecular Beam Epitaxy of Gallium Arsenide on Silicon}},
  year = {1989},
  volume = {15},
  number = {1},
  pages = {1--50},

  journal = {Comments on Condensed Matter Physics}
}

@ARTICLE{Sadan2006,
  author = {Sadan, H and Kaplan, W D},
  title = {{Au-Sapphire (0001) solid-solid interfacial energy}},
  year = {2006},
  volume = {41},
  number = {16},
  pages = {5099--5107},
  journal = {Journal of Materials Science},
  publisher = {Springer}
}

@ARTICLE{Sadowski2010,
  author = {Sadowski, T. and Ramprasad, R.},
  title = {{First principles computational study of wurtzite CdTe nanowires}},
  year = {2010},
  volume = {45},
  number = {20},
  month = may,
  pages = {5463--5467},
  issn = {0022-2461},
  doi = {10.1007/s10853-010-4599-9},

  journal = {Journal of Materials Science}
}

@ARTICLE{Sakamoto1986,
  author = {Sakamoto, T. and Hashiguchi, G.},
  title = {{Si (001)-2× 1 Single-Domain Structure Obtained by High Temperature
    Annealing}},
  year = {1986},
  doi = {10.1143/JJAP.25.L78},


  journal = {Japanese Journal of Applied}
}

@ARTICLE{Sakamoto1986a,
  author = {Sakamoto, T. and Hashiguchi, G.},
  title = {{Si (001)-2×1 Single-Domain Structure Obtained by High Temperature
    Annealing}},
  year = {1986},
  volume = {25},
  number = {1},
  pages = {L78--L80},
  doi = {10.1143/JJAP.25.L78},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Sant1999,
  author = {Sant, S. B. and Weatherly, G. C. and Smith, R. W.},
  title = {{Spontaneous twin formation in ZnSe films grown by molecular beam
    epitaxy}},
  year = {1999},
  volume = {79},
  number = {3},
  month = mar,
  pages = {561--575},
  issn = {0141-8610},
  doi = {10.1080/01418619908210317},


  journal = {Philosophical Magazine A}
}

@ARTICLE{Sant1999a,
  author = {Sant, S. B. and Weatherly, G. C. and Smith, R. W.},
  title = {{Spontaneous twin formation in ZnSe films grown by molecular beam
    epitaxy}},
  year = {1999},
  volume = {79},
  number = {3},
  month = mar,
  pages = {561--575},
  issn = {0141-8610},
  doi = {10.1080/01418619908210317},


  journal = {Philosophical Magazine A}
}

@ARTICLE{Sant1999b,
  author = {Sant, S. B. and Weatherly, G. C. and Smith, R. W.},
  title = {{Spontaneous twin formation in ZnSe films grown by molecular beam
    epitaxy}},
  year = {1999},
  volume = {79},
  number = {3},
  month = mar,
  pages = {561--575},
  issn = {0141-8610},
  doi = {10.1080/01418619908210317},


  journal = {Philosophical Magazine A}
}

@ARTICLE{Sardi1984,
  author = {SARDI, L and BARGIONI, S and CANALI, C and DAVOLI, P and PRUDENZIATI,
    M and VALBUSA, V},
  title = {{Some features of thick film technology for the back metallization
    of solar cells}},
  year = {1984},
  volume = {11},
  number = {1},
  month = feb,
  pages = {51--67},
  issn = {03796787},
  doi = {10.1016/0379-6787(84)90119-4},


  journal = {Solar Cells},
  publisher = {Elsevier}
}

@ARTICLE{Sarney2004,
  author = {Sarney, W. and Brill, G.},
  title = {{A microstructural study of the CdTe/ZnTe film morphology as related
    to the Si substrate orientation}},
  year = {2004},
  volume = {48},
  number = {10-11},
  month = nov,
  pages = {1917--1920},
  issn = {00381101},
  doi = {10.1016/j.sse.2004.05.036},

  annote = {I have notes!},

  journal = {Solid-State Electronics},
  keywords = {cdte,mbe,molecular beam epitaxy,si,tem,transmission electron microscopy}
}

@ARTICLE{Sasaki1992,
  author = {Sasaki, T.},
  title = {{Study of CdTe epitaxial growth on (211)B {GaAs} by molecular-beam
    epitaxy}},
  year = {1992},
  volume = {10},
  number = {4},
  month = jul,
  pages = {1399},
  issn = {0734211X},
  doi = {10.1116/1.585875},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@INPROCEEDINGS{Sato2003,
  author = {Sato, K. and Shikida, Mitsuhiro and Ono, Atsushi and Asaumi, K. and
    Iriye, Y.},
  title = {{Development of quartz etching database and {3-D} micromachining
    simulation system}},
  booktitle = {MHS2003. Proceedings of 2003 International Symposium on Micromechatronics
    and Human Science (IEEE Cat. No.03TH8717)},
  year = {2003},
  publisher = {IEEE},
  isbn = {0-7803-8165-3},
  pages = {281--285},
  doi = {10.1109/MHS.2003.1249949},


}

@INPROCEEDINGS{Schonecker1998,
  author = {Sch\"{o}necker, A. and Weeber, AW and Sinke, W. C. and Zechner, C.
    and Kress, A. and Fath, P.},
  title = {{ATTACKING LIMITING FACTORS IN 10•• 10 cm2 MULTICRYSTALLINE SILICON,
    {EMI}TTER WRAP-THROUGH SOLAR CELL DESIGN AND PROCESSING}},
  booktitle = {Proc. 2\textsuperscript{nd} WCPSEC, Vienna},
  year = {1998},
  pages = {1677},

  keywords = {emitter wrap-through - 1,manufacturing and processing- 2,multi-crystalline
    - 3}
}

@ARTICLE{Schaadt2005,
  author = {Schaadt, D M and Feng, B and Yu, E T},
  title = {{Enhanced semiconductor optical absorption via surface plasmon excitation
    in metal nanoparticles}},
  year = {2005},
  volume = {86},
  number = {6},
  pages = {63106},


  journal = {Applied Physics Letters},
  keywords = {elemental semiconductors,extinction coefficients,gold,nanoparticles,particle
    size,photoconductivity,semiconductor diodes,semiconductor-metal boundaries,silicon,surface
    plasmon resonance,ultraviolet spectra},
  publisher = {AIP}
}

@ARTICLE{Schaefer1979,
  author = {Schaefer, a R and Geist, J},
  title = {{Spatial uniformity of quantum efficiency of a silicon photovoltaic
    detector.}},
  year = {1979},
  volume = {18},
  number = {12},
  month = jun,
  pages = {1933--6},
  issn = {0003-6935},

  abstract = {In the course of investigating the spatial uniformity of response
    of a silicon detector, an extensive experiment was conducted to examine
    the correlation between changes in reflectance, internal and external
    quantum efficiency as a function of position and wavelength on the
    detector. The sensitivity of the technique was tested and demonstrated
    in several ways. The examined detector was found to be suitably uniform
    for absolute radiometric purposes, and the small changes observed
    in external quantum efficiency can be easily accounted for by the
    dead layer model.},

  journal = {Applied optics},
  pmid = {20212581}
}

@ARTICLE{Schaffer2012,
  author = {Schaffer, Miroslava and Schaffer, Bernhard and Ramasse, Quentin},
  title = {{Sample preparation for atomic-resolution STEM at low voltages by
    FIB.}},
  year = {2012},
  volume = {114C},
  month = jan,
  pages = {62--71},
  issn = {1879-2723},
  doi = {10.1016/j.ultramic.2012.01.005},

  abstract = {While FIB sample preparation for transmission electron microscopy
    is a well established technique, few examples exist of samples of
    sufficient quality for atomic resolution imaging by aberration corrected
    (scanning) transmission electron microscopy (STEM). In this work
    we demonstrate the successful preparation of such samples from five
    different materials and present the refined lift-out preparation
    technique, which was applied here. Samples with parallel surfaces
    and a general thickness between 20 and 40nm over a range of several
    $\mu$m were repeatedly prepared and analyzed by Cs-corrected STEM
    at 60 and 100kV. Here, a novel 'wedge pre-milling' step helps to
    keep the protective surface layers intact during the whole milling
    process, allowing features close to or at the sample surface to be
    analyzed without preparation damage. Another example shows the cross-sectional
    preparation of a working thin film solar cell device to a final thickness
    of 10 to 20nm over $\mu$m sized areas in the region of interest,
    enabling atomic resolution imaging and elemental mapping across general
    grain boundaries without projection artefacts. All sample preparation
    has been carried out in modern Dual-Beam FIB microscopes capable
    of low-kV Ga(+) ion milling, but without additional preparation steps
    after the FIB lift-out procedure.},

  journal = {Ultramicroscopy},
  keywords = {Aberration corrected STEM,FIB,Lift-out,Low-voltage,Pre-wedge milling,Sample
    preparation},
  pmid = {22356790},
  publisher = {Elsevier}
}

@ARTICLE{Schenk1996,
  author = {Schenk, M. and H\"{a}hnert, I. and Duong, L T H and Niebsch, H.-H.},
  title = {{Validity of the Lattice-Parameter Vegard-Rule in Cd1-xZnxTe Solid
    Solutions}},
  year = {1996},
  volume = {31},
  number = {5},
  pages = {665--672},
  issn = {02321300},
  doi = {10.1002/crat.2170310524},

  journal = {Crystal Research and Technology}
}

@ARTICLE{Schmidt2008,
  author = {Schmidt, Jan and Merkle, Agnes and Hoex, B. and van de Sanden, M.C.M.
    and Kessels, W.M.M. and Brendel, Rolf},
  title = {{Atomic-layer-deposited aluminum oxide for the surface passivation
    of high-efficiency silicon solar cells}},
  year = {2008},
  month = may,
  pages = {1--5},
  issn = {0160-8371},
  doi = {10.1109/PVSC.2008.4922636},


  isbn = {978-1-4244-1640-0},
  journal = {2008 33rd IEEE Photovolatic Specialists Conference},
  publisher = {Ieee}
}

@ARTICLE{Schmidt2009,
  author = {Schmidt, Jan and Thiemann, Nils and Bock, Robert and Brendel, Rolf},
  title = {{Recombination lifetimes in highly aluminum-doped silicon}},
  year = {2009},
  volume = {106},
  number = {9},
  pages = {093707},
  issn = {00218979},
  doi = {10.1063/1.3253742},


  journal = {Journal of Applied Physics}
}

@INPROCEEDINGS{Schmiga2010,
  author = {Schmiga, C and Rauer, Michael and R\"{u}diger, Marc and Meyer, Karsten
    and Lossen, Jan and Krokoszinski, Hans-joachim and Hermle, Martin
    and Glunz, S. W.},
  title = {{ALUMINIUM-DOPED P+ SILICON FOR REAR {EMI}TTERS AND BACK SURFACE
    FIELDS: RESULTS AND POTENTIALS OF INDUSTRIAL N- AND P-TYPE SOLAR
    CELLS}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {6--10},

  keywords = {aluminium-doped silicon,industrial cell concepts,silicon solar cells}
}

@PHDTHESIS{Schneider2004,
  author = {Schneider, A.},
  title = {{CHARAKTERISIERUNGSVERFAHREN UND INDUSTRIEKOMPATIBLE HERSTELLUNGSPROZESSE
    F\"{U}R D\"{U}NNE MULTIKRISTALLINE SILIZIUMSOLARZELLEN}},
  year = {2004},


}

@INPROCEEDINGS{Schneiderlochner2002,
  author = {Schneiderl\"{o}cher, E. and Grohe, A. and Ballif, C. and Glunz, S.
    W. and Preu, R. and Willeke, G. P.},
  title = {{Investigations on laser-fired contacts for passivated rear solar
    cells}},
  booktitle = {CONFERENCE RECORD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE},
  year = {2002},
  volume = {29},
  publisher = {IEEE},
  pages = {300--303},


}

@ARTICLE{S1991,
  author = {Schroder-Bergen, E. and Ranke, W.},
  title = {{Steps on Si (001) vicinal surfaces tilted by various angles in the
    [1-10]-, [100]- and [2-10]-zones, inv estigated by high-resolution
    LEED}},
  year = {1991},
  volume = {259},
  pages = {323--338},

  journal = {Surface Science}
}

@ARTICLE{Schroder-Bergen1991,
  author = {Schroder-Bergen, E. and Ranke, W.},
  title = {{Steps on Si (001) vicinal surfaces tilted by various angles in the
    [1-10]-, [100]- and [2-10]-zones, investigated by high-resolution
    LEED}},
  year = {1991},
  volume = {259},
  pages = {323--338},

  journal = {Surface Science}
}

@INPROCEEDINGS{Schumann2009,
  author = {Schumann, Mark and Singh, Matthias and P\'{e}rez, Teresa Orellana
    and Riepe, Stephan},
  title = {{REACHING A KERF LOSS BELOW 100 µm BY OPTIMIZING THE RELATION BETWEEN
    WIRE THICKNESS AND ABRASIVE SIZE FOR MULTI-WIRE {SAW}ING}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {21--25},

  keywords = {c-si,multi-wire saw,wafering}
}

@ARTICLE{Schwarz2013,
  author = {Schwarz, Christian and Tscheuschner, Steffen and Frisch, Johannes
    and Winkler, Stefanie and Koch, Norbert and B\"{a}ssler, Heinz and
    K\"{o}hler, Anna},
  title = {{Role of the effective mass and interfacial dipoles on exciton dissociation
    in organic donor-acceptor solar cells}},
  year = {2013},
  volume = {87},
  number = {15},
  month = apr,
  pages = {155205--},
  doi = {10.1103/PhysRevB.87.155205},
  abstract = {Efficient exciton dissociation at a donor-acceptor interface is the
    crucial, yet not fully understood, step for obtaining high efficiency
    organic solar cells. Recent theoretical work suggested an influence
    of polymer conjugation length and of interfacial dipoles on the exciton
    dissociation yield. This necessitates experimental verification.
    To this end, we measured the dissociation yield of several polymer/C60
    planar heterojunction solar cells up to high electric fields. The
    results indeed prove that the yield of exciton dissociation depends
    strongly on the conjugation length of the polymers. Complementary
    photoemission experiments were carried out to assess the importance
    of dipoles at the donor-acceptor interfaces. Comparison of exciton
    dissociation models with experimental data shows that the widely
    used Onsager-Braun approach is unsuitable to explain photodissociation
    in polymer/C60 cells. Better agreement can be obtained using “effective
    mass” models that incorporate conjugation length effects by considering
    a reduced effective mass of the hole on the polymer and that include
    dielectric screening effects by interfacial dipoles. However, successful
    modeling of the photocurrent field dependence over a broad field
    range, in particular for less efficient solar cell compounds, requires
    that the dissociation at localized acceptor sites is also taken into
    account.},
  journal = {Physical Review B},
  publisher = {American Physical Society},
  shorttitle = {Phys. Rev. B}
}

@ARTICLE{Schweinfest2001,
  author = {Schweinfest, R. and Kostlmeier, S. and Ernst, F. and Elsaser, C.
    and Wagner, T. and Finnis, M. W.},
  title = {{Atomistic and electronic structure of Al/MgAl2O4 and Ag/MgAl2O4
    interfaces}},
  year = {2001},
  volume = {81},
  number = {4},
  month = apr,
  pages = {927--955},
  issn = {0141-8610},
  doi = {10.1080/01418610151133375},

  abstract = {We have carried out computational density functional investigations
    of Co I Re J (J=0,1,2; I+J=14) metal atom clusters. Through thorough
    optimization of geometry, spin polarization, and electronic configuration,
    the most stable structures for each cluster have been identified.
    While the global minima are found to be well defined and energetically
    well separated from other local minima, the study reveals a plethora
    of different structures and symmetries only moderately higher in
    energy. A key point of interest is the effect of doping the cobalt
    clusters with rhenium. Aside from significant structural reorganizations,
    rhenium is found to stabilize the clusters and couple down the spin.
    Furthermore, the most stable clusters comprise highly coordinated
    rhenium and, in the case of Co 12 Re 2, Re-Re bonding. Our results
    are compared to earlier experimental and computational data.},

  isbn = {0141861015113},
  journal = {Philosophical Magazine A},
  pmid = {18315077}
}

@ARTICLE{Segall1966,
  author = {Segall, B.},
  title = {{Optical Absorption Edge in CdTe: Theoretical}},
  year = {1966},
  volume = {150},
  number = {2},
  month = oct,
  pages = {734--747},
  issn = {0031-899X},
  doi = {10.1103/PhysRev.150.734},
  journal = {Physical Review}
}

@ARTICLE{Seifert1997,
  author = {Seifert, Udo},
  title = {{Configurations of fluid membranes and vesicles}},
  year = {1997},
  volume = {46},
  number = {1},
  pages = {13},
  doi = {10.1080/00018739700101488},
  annote = {Vesicles consisting of a bilayer membrane of amphiphilic lipid molecules
    are remarkably flexible surfaces that show an amazing variety of
    shapes of different symmetry and topology. Owing to the fluidity
    of the membrane, shape transitions such as budding can be induced
    by temperature changes or the action of optical tweezers. Thermally
    excited shape fluctuations are both strong and slow enough to be
    visible by video microscopy. Depending on the physical conditions,
    vesicles adhere to and unbind from each other or a substrate. This
    article describes the systematic physical theory developed to understand
    the static and dynamic aspects of membrane and vesicle configurations.
    The preferred shapes arise from a competition between curvature energy,
    which derives from the bending elasticity of the membrane, geometrical
    constraints such as fixed surface area and fixed enclosed volume,
    and a signature of the bilayer aspect. These shapes of lowest energy
    are arranged into phase diagrams, which separate regions of different
    symmetry by continuous or discontinuous transitions. The geometrical
    constraints affect the fluctuations around these shapes by creating
    an effective tension. For vesicles of non-spherical topology, the
    conformal invariance of the curvature energy leads to conformal diffusion,
    which signifies a one-fold degeneracy of the ground state. Unbinding
    and adhesion transitions arise from the balance between attractive
    interactions and entropic repulsion or a cost in bending energy,
    respectively. Both the dynamics of equilibrium fluctuations and the
    dynamics of shape transformations are governed not only by viscous
    damping in the surrounding liquid but also by internal friction if
    the two monolayers slip over each other. More complex membranes such
    as that of the red blood cell exhibit a variety of new phenomena
    because of coupling between internal degrees of freedom and external
    geometry.},
  isbn = {0001-8732},
  journal = {Advances in Physics},
  publisher = {Taylor \& Francis}
}

@ARTICLE{Seifert1991,
  author = {Seifert, Udo and Berndl, Karin and Lipowsky, Reinhard},
  title = {{Shape transformations of vesicles: Phase diagram for spontaneous-
    curvature and bilayer-coupling models}},
  year = {1991},
  volume = {44},
  number = {2},
  pages = {1182},
  doi= {10.1103/PhysRevA.44.1182},
  journal = {Physical Review A},
  publisher = {American Physical Society}
}

@ARTICLE{Shalaev2005,
  author = {Shalaev, Vladimir M and Cai, Wenshan and Chettiar, Uday K and Yuan,
    Hsiao-Kuan and Sarychev, Andrey K and Drachev, Vladimir P and Kildishev,
    Alexander V},
  title = {{Negative index of refraction in optical metamaterials}},
  year = {2005},
  volume = {30},
  number = {24},
  pages = {3356--3358},

  journal = {Optics Letters},
  keywords = {Optical materials,Resonance,Thin films, optical properties},
  publisher = {OSA}
}

@ARTICLE{Shapovalov2000,
  author = {Shapovalov, Vladimir and Truong, Thanh N.},
  title = {{Ab Initio Study of Water Adsorption on $\alpha$-Al 2 O 3 (0001)
    Crystal Surface}},
  year = {2000},
  volume = {104},
  number = {42},
  month = oct,
  pages = {9859--9863},
  issn = {1520-6106},
  doi = {10.1021/jp001399g},

  journal = {The Journal of Physical Chemistry B}
}

@ARTICLE{Sharma2007,
  author = {Sharma, a and Agarwal, S and Singh, S},
  title = {{Determination of front surface recombination velocity of silicon
    solar cells using the short-wavelength spectral response}},
  year = {2007},
  volume = {91},
  number = {15-16},
  month = sep,
  pages = {1515--1520},
  issn = {09270248},
  doi = {10.1016/j.solmat.2007.04.018},


  journal = {Sol. Energy Mater. Sol. Cells},
  keywords = {silicon solar cell,spectral response,surface recombination velocity}
}

@ARTICLE{Shen2005,
  author = {Shen, X. M. and Wang, Y. T. and Wang, J. F. and Liu, J. P. and Zhang,
    J. C. and Guo, L. P. and Jia, Q. J. and Jiang, X. M. and Hu, Z. F.
    and Yang, H. and Liang, J. W.},
  title = {{Twinning in Low-Temperature MOCVD Grown GaN on (001) {GaAs} Substrate}},
  year = {2005},
  volume = {26},
  number = {4},
  pages = {645--650},
  annote = {Mention of twinning of the second order!? Oh no! Well at least it
    isn't grown on Si.},

  journal = {Chinese Journal of Semiconductors},
  keywords = {X-ray diffraction,metalorganic chemical vapor deposition,nitrides}
}

@ARTICLE{Sherry2006,
  author = {Sherry, Leif J and Jin, Rongchao and Mirkin, Chad a and Schatz, George
    C and {Van Duyne}, Richard P},
  title = {{Localized surface plasmon resonance spectroscopy of single silver
    triangular nanoprisms.}},
  year = {2006},
  volume = {6},
  number = {9},
  month = sep,
  pages = {2060--5},
  issn = {1530-6984},
  doi = {10.1021/nl061286u},

  abstract = {The plasmonic properties of single silver triangular nanoprisms are
    investigated using dark-field optical microscopy and spectroscopy.
    Two distinct localized surface plasmon resonances (LSPR) are observed.
    These are assigned as in-plane dipolar and quadrupolar plasmon excitations
    using electrodynamic modeling based on the discrete dipole approximation
    (DDA). The dipole resonance is found to be very intense, and its
    peak wavelength is extremely sensitive to the height, edge length,
    and tip sharpness of the triangular nanoprism. In contrast, the intensity
    of the quadrupole resonance is much weaker relative to the dipole
    resonance in the single particle spectra than in the ensemble averaged
    spectrum. Several parameters relevant to the chemical sensing properties
    of these nanoprisms have been measured. The dependence of the dipole
    plasmon resonance on the refractive index of the external medium
    is found to be as high as 205 nm RIU(-1) and the plasmon line width
    as narrow as approximately 0.17 eV. These data lead to a sensing
    figure of merit (FOM), the slope of refractive index sensitivity
    in eV RIU(-1)/line width (eV), as high as 3.3. In addition, the LSPR
    shift response to alkanethiol chain length was found to be linear
    with a slope of 4.4 nm per CH2 unit. This is the highest short-range
    refractive index sensitivity yet measured for a nanoparticle.},

  journal = {Nano letters},
  keywords = {Computer Simulation,Crystallization,Crystallization: methods,Light,Materials
    Testing,Models, Chemical,Models, Molecular,Nanostructures,Nanostructures:
    chemistry,Nanostructures: radiation effects,Nanostructures: ultrastructure,Particle
    Size,Refractometry,Silver,Silver: chemistry,Surface Plasmon Resonance,Surface
    Plasmon Resonance: methods,Surface Properties,Vibration},
  pmid = {16968025}
}

@ARTICLE{Shigenaka1996,
  author = {Shigenaka, K. and Matsushita, K. and Sugiura, L. and Nakata, F. and
    Hirahara, K. and Uchikoshi, M. and Nagashima, M. and Wada, H.},
  title = {{Orientation dependence of HgCdTe epitaxial layers grown by MOCVD
    on Si substrates}},
  year = {1996},
  volume = {25},
  number = {8},
  month = aug,
  pages = {1347--1352},
  issn = {0361-5235},
  doi = {10.1007/BF02655031},

  journal = {Journal of Electronic Materials}
}

@ARTICLE{Shimomura1992,
  author = {Shimomura, H. and Okada, Y. and Kawabe, M.},
  title = {{Low dislocation density {GaAs} on vicinal Si (100) grown by molecular
    beam epitaxy with atomic hydrogen irradiation}},
  year = {1992},
  volume = {31},
  number = {5B},
  pages = {L628--L631},
  issn = {0021-4922},


  journal = {Japanese Journal of Applied Physics},
  publisher = {Japanese journal of applied physics}
}

@ARTICLE{Shimomura1992a,
  author = {Shimomura, H. and Okada, Y. and Kawabe, M.},
  title = {{Low dislocation density {GaAs} on vicinal Si (100) grown by molecular
    beam epitaxy with atomic hydrogen irradiation}},
  year = {1992},
  volume = {31},
  number = {5B},
  pages = {L628--L631},
  issn = {0021-4922},


  journal = {Japanese Journal of Applied Physics},
  publisher = {Japanese journal of applied physics}
}

@ARTICLE{Shockley1961,
  author = {Shockley, William and Queisser, Hans J.},
  title = {{Detailed Balance Limit of Efficiency of p-n Junction Solar Cells}},
  year = {1961},
  volume = {32},
  number = {3},
  pages = {510},
  issn = {00218979},
  doi = {10.1063/1.1736034},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Sibailly2004,
  author = {Sibailly, Ochelio},
  title = {{Laser dicing of silicon and composite semiconductor materials}},
  year = {2004},
  pages = {394--397},
  issn = {0277786X},
  doi = {10.1117/12.529038},


  journal = {Proceedings of SPIE},
  keywords = {compound semiconductors,gaas,laser cutting,silicon,water-jet},
  publisher = {Spie}
}

@ARTICLE{Silly2009,
  author = {Silly, F and Castell, M R},
  title = {{Temperature-dependent stability of supported five-fold twinned copper
    nanocrystals}},
  year = {2009},
  volume = {3},
  number = {4},
  month = apr,
  pages = {901--906},

  address = {Department of Materials, University of Oxford, Parks Road, Oxford
    OX1 3PH, UK. fabien.silly@cea.fr},
  annote = {The temperature-dependent structure transition of supported Cu nanocrystals
    on SrTiO3(001)-(2 x 1) is investigated by scanning tunneling microscopy
    (STM). We experimentally determine the phase map of supported Cu
    icosahedral, decahedral, and truncated octahedral nanocrystal shapes
    as a function of substrate temperature during Cu deposition. We show
    that a supported nanocrystal of 8500 atoms at a nucleation temperature
    of 480 degrees C has the same probability of adopting an icosahedral
    or octahedral shape.},
  isbn = {1936-086X},
  journal = {ACS nano}
}

@ARTICLE{Silly2006,
  author = {Silly, Fabien and Castell, Martin R},
  title = {{Bimodal Growth of Au on SrTiO[sub 3](001)}},
  year = {2006},
  volume = {96},
  number = {8},
  pages = {86104},

  journal = {Physical Review Letters},
  keywords = {gold,metallic epitaxial layers,monolayers,nanostructured materials,nanotechnology,scanning
    tunnelling microscopy,strontium compounds,surface reconstruction,vapour
    phase epitaxial growth,wetting},
  publisher = {APS}
}

@MISC{Silly2005,
  author = {Silly, F and Castell, M R},
  title = {{Encapsulated Pd nanocrystals supported by nanoline-structured SrTiO3(001)}},
  year = {2005},
  address = {Washington, D.C.},
  booktitle = {The journal of physical chemistry. B, Condensed matter, materials,
    surfaces, interfaces biophysical},
  isbn = {1520-6106},
  number = {25},
  pages = {12316},
  publisher = {American Chemical Society},
  volume = {109}
}

@MISC{Silly2005a,
  author = {Silly, F and Castell, M R},
  title = {{Growth of Ag icosahedral nanocrystals on a SrTiO3(001) support}},
  year = {2005},
  address = {Melville, NY},
  booktitle = {Applied physics letters},
  isbn = {0003-6951},
  number = {21},
  publisher = {American Institute of Physics},
  volume = {87}
}

@ARTICLE{Silly2005b,
  author = {Silly, Fabien and Castell, Martin R},
  title = {{Selecting the Shape of Supported Metal Nanocrystals: Pd Huts, Hexagons,
    or Pyramids on \$SrTiO3(001)\$}},
  year = {2005},
  volume = {94},
  number = {4},
  month = feb,
  pages = {46103},
  doi = {10.1103/PhysRevLett.94.046103},
  journal = {Physical Review Letters},
  publisher = {American Physical Society}
}

@ARTICLE{Silly2005c,
  author = {Silly, Fabien and Castell, Martin R},
  title = {{Fe nanocrystal growth on SrTiO[sub 3](001)}},
  year = {2005},
  volume = {87},
  number = {6},
  pages = {63106},

  journal = {Applied Physics Letters},
  keywords = {adhesion,crystal morphology,epitaxial growth,ferromagnetic materials,iron,nanostructured
    materials,scanning tunnelling microscopy,self-assembly,surface reconstruction},
  publisher = {AIP}
}

@ARTICLE{Silly2005d,
  author = {Silly, Fabien and Powell, Andrew C and Martin, Marta G and Castell,
    Martin R},
  title = {{Growth shapes of supported Pd nanocrystals on \$ SrTiO3 (001) \$}},
  year = {2005},
  volume = {72},
  number = {16},
  month = oct,
  pages = {165403},
  doi = {10.1103/PhysRevB.72.165403},
  journal = {Physical Review B},
  publisher = {American Physical Society}
}

@INPROCEEDINGS{smith2012_znte,
  author = {Smith, D. J. and Kim, J. J. and McCartney, M. R. and Aoki, T},
  title = {{Atomic-Scale Characterization of II-VI Compound Semiconductors}},
  booktitle = {2012 U.S. Workshop on the Physics and Chemistry of II-VI Materials},
  year = {2012}
}

@ARTICLE{Smith2000,
  author = {Smith, D. J. and Tsen, S. and Chandrasekhar, D. and Crozier, P. and
    Rujirawat, S. and Brill, G. and Chen, Y. P. and Sporken, R. and Sivananthan,
    S.},
  title = {{Growth and characterization of CdTe/Si heterostructures — effect
    of substrate orientation}},
  year = {2000},
  volume = {77},
  number = {1},
  month = aug,
  pages = {93--100},
  issn = {09215107},
  doi = {10.1016/S0921-5107(00)00480-3},


  journal = {Materials Science and Engineering B},
  keywords = {cdte,characterization,growth,si heterostructures,substrate orientation}
}

@ARTICLE{Smits1958,
  author = {Smits, F. M.},
  title = {{Measurement of sheet resistivities with the four-point probe}},
  year = {1958},
  volume = {37},
  number = {3},
  pages = {711--18},


  journal = {Bell Syst. Tech. J}
}

@ARTICLE{Smythe2007,
  author = {Smythe, Elizabeth J and Cubukcu, Ertugrul and Capasso, Federico},
  title = {{Optical properties of surface plasmon resonances of coupled metallic
    nanorods}},
  year = {2007},
  volume = {15},
  number = {12},
  month = nov,
  pages = {7439--7447},

  journal = {Optics Express},
  keywords = {Fiber optics sensors,Resonance,Surface plasmons},
  publisher = {OSA}
}

@ARTICLE{Sonnichsen2005,
  author = {Sonnichsen, C and Reinhard, B M and Liphardt, J and Alivisatos, A
    P},
  title = {{A molecular ruler based on plasmon coupling of single gold and silver
    nanoparticles}},
  year = {2005},
  volume = {23},
  number = {6},
  month = jun,
  pages = {741--745},
  address = {Department of Chemistry, University of California, Berkeley, California
    94720.},
  annote = {Forster Resonance Energy Transfer has served as a molecular ruler
    that reports conformational changes and intramolecular distances
    of single biomolecules. However, such rulers suffer from low and
    fluctuating signal intensities, limited observation time due to photobleaching,
    and an upper distance limit of approximately 10 nm. Noble metal nanoparticles
    have plasmon resonances in the visible range and do not blink or
    bleach. They have been employed as alternative probes to overcome
    the limitations of organic fluorophores, and the coupling of plasmons
    in nearby particles has been exploited to detect particle aggregation
    by a distinct color change in bulk experiments. Here we demonstrate
    that plasmon coupling can be used to monitor distances between single
    pairs of gold and silver nanoparticles. We followed the directed
    assembly of gold and silver nanoparticle dimers in real time and
    studied the kinetics of single DNA hybridization events. These "plasmon
    rulers" allowed us to continuously monitor separations of up to 70
    nm for >3,000 s.},
  isbn = {1087-0156},
  journal = {Nature biotechnology},
  keywords = {DNA/chemistry,Fluorescence Resonance Energy Transfer,Gold,Nanostructures/chemistry,Nucleic
    Acid Hybridization,Silver,Surface Plasmon Resonance/methods}
}

@ARTICLE{Sopori2002,
  author = {Sopori, Bhushan},
  title = {{Silicon solar-cell processing for minimizing the influence of impurities
    and defects}},
  year = {2002},
  volume = {31},
  number = {10},
  pages = {972--980},


  journal = {Journal of Electronic Materials},
  keywords = {defects,impurities,silicon,solar cells},
  publisher = {Springer}
}

@ARTICLE{Spadavecchia2005,
  author = {Spadavecchia, J and Prete, P and Lovergine, N and Tapfer, L and Rella,
    R},
  title = {{Au nanoparticles prepared by physical method on Si and sapphire
    substrates for biosensor applications.}},
  year = {2005},
  volume = {109},
  number = {37},
  month = sep,
  pages = {17347--9},
  issn = {1520-6106},
  doi = {10.1021/jp053194j},

  abstract = {Gold nanoparticles heavily functionalized with oligonucleotides have
    been used in a variety of DNA detection methods. The optical properties
    of three-dimensional aggregates of Au nanoparticles in solution or
    deposited onto suitable surfaces have been analyzed to detect hybridization
    processes of specific DNA sequences as possible alternatives to fluorescent
    labeling methods. This paper reports on the preparation of gold nanoparticles
    directly deposited onto the surface of silicon (Si) and sapphire
    (Al2O3) substrates by a physical methodology, consisting in the thermal
    evaporation of a thin Au film and its successive annealing. The method
    guarantees the preparation of monodispersed single-crystal Au nanoparticles
    with a strong surface plasmon resonance (SPR) peak centered at about
    540 nm. We show that the changes of SPR excitation before and after
    DNA functionalization and subsequent hybridization of Au nanoparticles
    immobilized onto Si and Al2O3 substrates can be exploited to fabricate
    specific biosensors devices in solid phase.},

  journal = {The journal of physical chemistry. B},
  keywords = {Aluminum Oxide,Aluminum Oxide: chemistry,Biosensing Techniques,DNA,DNA:
    chemistry,Gold,Gold: chemistry,Microscopy, Electron, Scanning,Nanoparticles,Nanoparticles:
    chemistry,Oligonucleotides,Oligonucleotides: chemistry,Silicones,Silicones:
    chemistry,X-Ray Diffraction},
  pmid = {16853216}
}

@ARTICLE{Stevenson1990,
  author = {Stevenson, AW and Pain, GN},
  title = {{X-ray diffraction investigation of epitaxial layers of CdTe on sapphire}},
  year = {1990},


  journal = {Australian Journal of Physics}
}

@ARTICLE{Stevenson1990a,
  author = {Stevenson, AW and Pain, GN},
  title = {{X-ray diffraction investigation of epitaxial layers of CdTe on sapphire}},
  year = {1990},


  journal = {Australian Journal of Physics}
}

@ARTICLE{Sturm2001,
  author = {Sturm, Kai and Krebs, Hans-Ulrich},
  title = {{Quantification of resputtering during pulsed laser deposition}},
  year = {2001},
  volume = {90},
  number = {2},
  pages = {1061},
  issn = {00218979},
  doi = {10.1063/1.1379050},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Sudhir1998,
  author = {Sudhir, G. S. and Fujii, H. and Wong, W. S. and Kisielowski, C. and
    Newman, N. and Dieker, C. and Liliental-Weber, Z. and Rubin, M. D.
    and Weber, E. R.},
  title = {{Control of the structure and surface morphology of gallium nitride
    and aluminum nitride thin films by nitrogen background pressure in
    pulsed laser deposition}},
  year = {1998},
  volume = {27},
  number = {4},
  month = apr,
  pages = {215--221},
  issn = {0361-5235},
  doi = {10.1007/s11664-998-0390-y},

  journal = {Journal of Electronic Materials},
  keywords = {aln,doping,gan,lattice parameter,pulsed laser deposition}
}

@ARTICLE{Sudhir1998a,
  author = {Sudhir, G. S. and Fujii, H. and Wong, W. S. and Kisielowski, C. and
    Newman, N. and Dieker, C. and Liliental-Weber, Z. and Rubin, M. D.
    and Weber, E. R.},
  title = {{Control of the structure and surface morphology of gallium nitride
    and aluminum nitride thin films by nitrogen background pressure in
    pulsed laser deposition}},
  year = {1998},
  volume = {27},
  number = {4},
  month = apr,
  pages = {215--221},
  issn = {0361-5235},
  doi = {10.1007/s11664-998-0390-y},

  journal = {Journal of Electronic Materials},
  keywords = {aln,doping,gan,lattice parameter,pulsed laser deposition}
}

@ARTICLE{Sugaya1991,
  author = {Sugaya, Takeyoshi and Kawabe, Mitsuo},
  title = {{Low-Temperature Cleaning of {GaAs} Substrate by Atomic Hydrogen
    Irradiation}},
  year = {1991},
  volume = {30},
  number = {Part 2, No. 3A},
  month = mar,
  pages = {L402--L404},
  issn = {0021-4922},
  doi = {10.1143/JJAP.30.L402},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Sugaya1991a,
  author = {Sugaya, Takeyoshi and Kawabe, Mitsuo},
  title = {{Low-Temperature Cleaning of {GaAs} Substrate by Atomic Hydrogen
    Irradiation}},
  year = {1991},
  volume = {30},
  number = {Part 2, No. 3A},
  month = mar,
  pages = {L402--L404},
  issn = {0021-4922},
  doi = {10.1143/JJAP.30.L402},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Sugo1985,
  author = {Sugo, Mitsuru},
  title = {{high-efficiency {InP} solar cells with n+-p-p+ structure grown by
    metalorganic chemical vapor deposition}},
  year = {1985},
  volume = {24},

  journal = {J. Appl. Phys.}
}

@ARTICLE{Sun2002,
  author = {Sun, Yugang and Xia, Younan},
  title = {{Shape-Controlled Synthesis of Gold and Silver Nanoparticles}},
  year = {2002},
  volume = {298},
  number = {5601},
  pages = {2176--2179},

  journal = {Science}
}

@ARTICLE{Sundar2012,
  author = {Sundar, a. and Decker, C.J. and Hughes, R.a. and Neretina, S.},
  title = {{The templated assembly of highly faceted three-dimensional gold
    microstructures into periodic arrays}},
  year = {2012},
  volume = {76},
  month = jun,
  pages = {155--158},
  issn = {0167577X},
  doi = {10.1016/j.matlet.2012.02.091},


  journal = {Materials Letters}
}

@ARTICLE{Sundar2012a,
  author = {Sundar, A. and Hughes, R. a. and Farzinpour, P. and Gilroy, K. D.
    and Devenyi, G. A. and Preston, J. S. and Neretina, S.},
  title = {{Manipulating the size distribution of supported gold nanostructures}},
  year = {2012},
  volume = {100},
  number = {1},
  pages = {013111},
  issn = {00036951},
  doi = {10.1063/1.3675569},


  journal = {Applied Physics Letters}
}

@ARTICLE{Sundararajan2008,
  author = {Sundararajan, Sri Priya and Grady, Nathaniel K and Mirin, Nikolay
    and Halas, Naomi J},
  title = {{Nanoparticle-induced enhancement and suppression of photocurrent
    in a silicon photodiode.}},
  year = {2008},
  volume = {8},
  number = {2},
  month = feb,
  pages = {624--30},
  issn = {1530-6984},
  doi = {10.1021/nl073030+},

  abstract = {Nanoparticles are capable of both enhancing and suppressing the photocurrent
    in a silicon diode when deposited on the active face of the device.
    Photocurrent imaging of the individual nanoparticles and nanoparticle
    aggregates responsible for this effect reveals that Au nanospheres,
    nanoshells, and nanoshell dimers each exhibit unique wavelength-dependent
    suppression-enhancement characteristics. In contrast, silica nanospheres
    provide a sizable and relatively uniform photocurrent enhancement
    across the same spectral range (532-980 nm). Unusual light-harvesting
    behavior observed correlates with a highly complex energy flow (optical
    "vortexing") for the forward scattered light of plasmon resonant
    nanoparticles into the device.},

  journal = {Nano letters},
  keywords = {Crystallization,Crystallization: methods,Electric Conductivity,Equipment
    Design,Equipment Failure Analysis,Lighting,Lighting: instrumentation,Lighting:
    methods,Materials Testing,Nanostructures,Nanostructures: chemistry,Nanostructures:
    ultrastructure,Nanotechnology,Nanotechnology: instrumentation,Nanotechnology:
    methods,Particle Size,Photochemistry,Photochemistry: instrumentation,Photochemistry:
    methods,Photons,Semiconductors,Silicon,Silicon: chemistry},
  pmid = {18211114}
}

@ARTICLE{Svendsen1996,
  author = {Svendsen, W. and Ellegaard, O. and Schou, J.},
  title = {{Laser ablation deposition measurements from silver and nickel}},
  year = {1996},
  volume = {63},
  number = {3},
  month = sep,
  pages = {247--255},
  issn = {0947-8396},
  doi = {10.1007/BF01567877},

  journal = {Applied Physics A Materials Science \& Processing}
}

@ARTICLE{Takahashi1993,
  author = {Takahashi, N. and Yagi, M. and Koukitu, A. and Seki, H.},
  title = {{In situ observation of halogen-transport atomic layer epitaxy of
    {GaAs} in inert carrier gas system}},
  year = {1993},
  volume = {32},
  pages = {L1277},


  journal = {Jpn. J. Appl. Phys.}
}

@ARTICLE{Takahashi1993a,
  author = {Takahashi, N. and Yagi, M. and Koukitu, A. and Seki, H.},
  title = {{In situ observation of halogen-transport atomic layer epitaxy of
    {GaAs} in inert carrier gas system}},
  year = {1993},
  volume = {32},
  pages = {L1277},


  journal = {Jpn. J. Appl. Phys.}
}

@ARTICLE{Takano2011,
  author = {Takano, Yasushi and Misaki, Tatsuru and Takagi, Tatsuya and Yamada,
    Hiroki and Fuke, Shunro},
  title = {{Sublattice Rotation of GaP Grown on 2°-Misoriented Si Substrate
    Using Metalorganic Vapor Phase Epitaxy}},
  year = {2011},
  volume = {50},
  number = {2},
  month = feb,
  pages = {025601},
  issn = {0021-4922},
  doi = {10.1143/JJAP.50.025601},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Takeuchi1985,
  author = {Takeuchi, S. and Suzuki, K. and Maeda, K. and Iwanaga, H.},
  title = {{Stacking-fault energy of II-VI compounds}},
  year = {1985},
  volume = {50},
  number = {2},
  month = feb,
  pages = {171--178},
  issn = {0141-8610},
  doi = {10.1080/01418618408244220},
  journal = {Philosophical Magazine A}
}

@ARTICLE{Takeuchi1985a,
  author = {Takeuchi, S. and Suzuki, K. and Maeda, K. and Iwanaga, H.},
  title = {{Stacking-fault energy of II-VI compounds}},
  year = {1985},
  volume = {50},
  number = {2},
  month = feb,
  pages = {171--178},
  issn = {0141-8610},
  doi = {10.1080/01418618408244220},
  journal = {Philosophical Magazine A}
}

@ARTICLE{Takeyama1996,
  author = {Takeyama, Shojiro},
  title = {{Possibility of Growing High Quality Very Thin Single CdTe Crystals
    Directly on Mica}},
  year = {1996},
  volume = {35},
  number = {Part 2, No. 6A},
  month = jun,
  pages = {L715--L718},
  issn = {00214922},
  doi = {10.1143/JJAP.35.L715},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Tam1989,
  author = {Tam, a. C. and Brand, J. L. and Cheng, D. C. and Zapka, W.},
  title = {{Picosecond laser sputtering of sapphire at 266 nm}},
  year = {1989},
  volume = {55},
  number = {20},
  pages = {2045},
  issn = {00036951},
  doi = {10.1063/1.102100},


  journal = {Applied Physics Letters}
}

@ARTICLE{Tang1992,
  author = {Tang, G.P. and Lubnow, A. and Wehmann, H.H. and Zwinge, G.},
  title = {{Antiphase-domain-free {InP} on (100) Si}},
  year = {1992},
  volume = {31},
  number = {8A Pt 2},


  journal = {Japanese Journal of Applied Physics}
}

@ARTICLE{Tang1992a,
  author = {Tang, G.P. and Lubnow, A. and Wehmann, H.H. and Zwinge, G.},
  title = {{Antiphase-domain-free {InP} on (100) Si}},
  year = {1992},
  volume = {31},
  number = {8A Pt 2},


  journal = {Jpn. J. Appi.}
}

@ARTICLE{Taniguchi1996,
  author = {Taniguchi, Takashi},
  title = {{Shape Deformation and Phase Separation Dynamics of Two-Component
    Vesicles}},
  year = {1996},
  volume = {76},
  number = {23},
  month = mar,
  pages = {4444},
  doi = {10.1103/PhysRevLett.76.4444},
  journal = {Physical Review Letters},
  publisher = {American Physical Society}
}

@ARTICLE{Tatsuoka1992,
  author = {Tatsuoka, H. and Kuwabara, H. and Nakanishi, Y. and Fujiyasu, H.},
  title = {{CdTe(111) growth on sapphire(0001) substrates by hot wall epitaxy}},
  year = {1992},
  volume = {213},
  number = {1},
  month = may,
  pages = {1--5},
  issn = {00406090},
  doi = {10.1016/0040-6090(92)90466-O},


  journal = {Thin Solid Films}
}

@ARTICLE{Tatsuoka1992a,
  author = {Tatsuoka, H. and Kuwabara, H. and Nakanishi, Y. and Fujiyasu, H.},
  title = {{CdTe(111) growth on sapphire(0001) substrates by hot wall epitaxy}},
  year = {1992},
  volume = {213},
  number = {1},
  month = may,
  pages = {1--5},
  issn = {00406090},
  doi = {10.1016/0040-6090(92)90466-O},


  journal = {Thin Solid Films}
}

@ARTICLE{Taub2003,
  author = {Taub, Nurit and Krichevski, Olga and Markovich, Gil},
  title = {{Growth of Gold Nanorods on Surfaces}},
  year = {2003},
  volume = {107},
  number = {42},
  month = jan,
  pages = {11579--11582},
  doi = {10.1021/jp036144s},
  annote = {doi: 10.1021/jp036144s; M3: doi: 10.1021/jp036144s},
  isbn = {1520-6106},
  journal = {The Journal of Physical Chemistry B},
  publisher = {American Chemical Society}
}

@ARTICLE{Teperik2008,
  author = {Teperik, T. V. and {Garc\'{\i}a de Abajo}, F. J. and Borisov, a.
    G. and Abdelsalam, M. and Bartlett, P. N. and Sugawara, Y. and Baumberg,
    J. J.},
  title = {{Omnidirectional absorption in nanostructured metal surfaces}},
  year = {2008},
  volume = {2},
  number = {5},
  month = apr,
  pages = {299--301},
  issn = {1749-4885},
  doi = {10.1038/nphoton.2008.76},

  journal = {Nature Photonics}
}

@ARTICLE{Blackman1994,
  author = {Tersoff, J. and {Denier van der Gon}, A. and Tromp, R.},
  title = {{Critical island size for layer-by-layer growth}},
  year = {1994},
  volume = {72},
  number = {2},
  month = jan,
  pages = {266--269},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.72.266},
  journal = {Physical Review Letters}
}

@ARTICLE{Tersoff1994,
  author = {Tersoff, J. and van der Gon, A.D.W. and Tromp, R.},
  title = {{Critical island size for layer-by-layer growth}},
  year = {1994},
  volume = {72},
  number = {2},
  month = jan,
  pages = {266--269},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.72.266},
  journal = {Physical Review Letters}
}

@INPROCEEDINGS{Ise2010,
  author = {Thaidigsmann, B.},
  title = {{COMBINING THE ADVANTAGES OF WRAP THROUGH METALLIZATION AND REAR
    SURFACE PASSIVATION INTO INDUSTRIAL MWT-PERC DEVICES}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},

  keywords = {back contact,metal wrap through,passivation,screen printing}
}

@ARTICLE{Thaidigsmann2011,
  author = {Thaidigsmann, Benjamin and Clement, F. and Wolf, A. and Lohm\"{u}ller,
    Elmar and Fertig, Fabian and Biro, Daniel and Preu, Ralf},
  title = {{HIP-MWT: A simplified structure for metal wrap through solar cells
    with passivated rear surface}},
  year = {2011},
  volume = {8},
  number = {April},
  month = jan,
  pages = {498--502},
  issn = {18766102},
  doi = {10.1016/j.egypro.2011.06.172},


  journal = {Energy Procedia},
  keywords = {mis,mwt,perc,screen-printed contacts}
}

@MISC{TheMendeleySupportTeam2011,
  author = {{The Mendeley Support Team}},
  title = {{Getting Started with Mendeley}},
  year = {2011},

  abstract = {A quick introduction to Mendeley. Learn how Mendeley creates your
    personal digital library, how to organize and annotate documents,
    how to collaborate and share with colleagues, and how to generate
    citations and bibliographies.},
  address = {London},
  booktitle = {Mendeley Desktop},

  keywords = {Mendeley,how-to,user manual},
  pages = {1--16},
  publisher = {Mendeley Ltd.}
}

@MISC{TheMendeleySupportTeam2011c,
  author = {{The Mendeley Support Team}},
  title = {{Getting Started with Mendeley}},
  year = {2011},

  abstract = {A quick introduction to Mendeley. Learn how Mendeley creates your
    personal digital library, how to organize and annotate documents,
    how to collaborate and share with colleagues, and how to generate
    citations and bibliographies.},
  address = {London},
  booktitle = {Mendeley Desktop},

  keywords = {Mendeley,how-to,user manual},
  pages = {1--16},
  publisher = {Mendeley Ltd.}
}

@ARTICLE{Thomas1997a,
  author = {Thomas, B},
  title = {{Structural and photoelectrical properties of FeS2 (pyrite) thin
    films grown by MOCVD}},
  year = {1997},
  volume = {170},
  number = {1-4},
  month = jan,
  pages = {808--812},
  issn = {00220248},
  doi = {10.1016/S0022-0248(96)00600-8},

  annote = { From Duplicate 1 ( Structural and photoelectrical properties of
    FeS2 (pyrite) thin films grown by MOCVD - Thomas, B )


     From Duplicate 2 ( Structural and photoelectrical properties of FeS2
    (pyrite) thin films grown by MOCVD - Thomas, B )






     },

  journal = {Journal of Crystal Growth}
}

@ARTICLE{Thomas2008,
  author = {Thomas, M. and Heczko, O. and Buschbeck, J. and Schultz, L. and Fähler,
    S.},
  title = {{Stress induced martensite in epitaxial Ni-Mn-Ga films deposited
    on MgO(001)}},
  year = {2008},
  volume = {92},
  number = {19},
  pages = {192515},
  issn = {00036951},
  doi = {10.1063/1.2931082},


  journal = {Applied Physics Letters}
}

@ARTICLE{Tobin1995,
  author = {Tobin, S. P. and Tower, J. P. and Norton, P. W. and Chandler-Horowitz,
    D. and Amirtharaj, P. M. and Lopes, V. C. and Duncan, W. M. and Syllaios,
    A. J. and Ard, C K and Giles, N. C. and Lee, Jaesun and Balasubramanian,
    R and Bollong, A B and Steiner, T. W. and Thewalt, M. L. W. and Bowen,
    D. K. and Tanner, B. K.},
  title = {{A comparison of techniques for nondestructive composition measurements
    in CdZnTe substrates}},
  year = {1995},
  volume = {24},
  number = {5},
  month = may,
  pages = {697--705},
  issn = {0361-5235},
  doi = {10.1007/BF02657981},

  journal = {Journal of Electronic Materials}
}

@ARTICLE{Toda2006,
  author = {Toda, T. and Jinbo, Y. and Uchitomi, N.},
  title = {{Structural and optical characterization of GaSb layers on Si (001)
    substrates}},
  year = {2006},
  volume = {3},
  number = {8},
  month = sep,
  pages = {2693--2696},
  issn = {1610-1634},
  doi = {10.1002/pssc.200669553},

  journal = {Physica Status Solidi (C)}
}

@ARTICLE{Toyota2008b,
  author = {Toyota, H. and Sasaki, T. and Jinbo, Y. and Uchitomi, N.},
  title = {{Growth and characterization of GaSb/AlGaSb multi-quantum well structures
    on Si (001) substrates}},
  year = {2008},
  volume = {310},
  number = {1},
  month = jan,
  pages = {78--82},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2007.10.008},

  annote = {I'm not the same as the other Toyota from 2008!},

  journal = {Journal of Crystal Growth},
  keywords = {a3,antimonide,b1,b2,molecular beam epitaxy,semiconducting iii,v material}
}

@ARTICLE{Toyota2008,
  author = {Toyota, H. and Sasaki, T. and Nakamura, S. and Jinbo, Y. and Uchitomi,
    N.},
  title = {{Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown
    on Si(001) Substrates}},
  year = {2008},
  volume = {47},
  number = {No. 1},
  month = jan,
  pages = {580--583},
  issn = {0021-4922},
  doi = {10.1143/JJAP.47.580},


  journal = {Japanese Journal of Applied Physics},
  keywords = {gasb,molecular beam epitaxy,multi-quantum-well,superlattice buffer
    layer}
}

@ARTICLE{Toyota2008a,
  author = {Toyota, H. and Yasuda, T. and Endoh, T. and Jinbo, Y. and Uchitomi,
    N.},
  title = {{Growth and characterization of GaSb heteroepitaxial layers on Si(111)
    substrates}},
  year = {2008},
  volume = {5},
  number = {9},
  month = jul,
  pages = {2769--2771},
  issn = {16101634},
  doi = {10.1002/pssc.200779259},

  journal = {Physica Status Solidi (C)}
}

@ARTICLE{Toyota2009,
  author = {Toyota, H. and Yasuda, T. and Endoh, T. and Nakamura, S. and Jinbo,
    Y. and Uchitomi, N.},
  title = {{Comparison of structural and optical properties of GaSb/AlGaSb quantum
    well structures grown on different oriented Si substrates}},
  year = {2009},
  volume = {311},
  number = {3},
  month = jan,
  pages = {802--805},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2008.09.063},


  journal = {Journal of Crystal Growth},
  keywords = {a3,molecular beam epitaxy}
}

@ARTICLE{Tran1996,
  author = {Tran, T.K. and Tomm, J.W. and Giles, N.C. and Wagner, B.K. and Parikh,
    A. and Summers, C.J.},
  title = {{Strong room temperature excitonic resonance in CdTe:I}},
  year = {1996},
  volume = {159},
  number = {1-4},
  month = feb,
  pages = {368--371},
  issn = {00220248},
  doi = {10.1016/0022-0248(95)00836-5},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{TRANDUC1997,
  author = {{TRAN DUC}, CHINH},
  title = {{CALCULATION OF SHALLOW SHELL SUBJECT TO INFLUENCE OF LOAD LOCAL
    EFFECT BY THE DIFFERENCE TECHNIQUE ON IRREGULAR NETWORKS}},
  year = {1997},
  volume = {40},
  number = {10},
  month = may,
  pages = {1749--1765},
  issn = {0029-5981},

  abstract = {In this paper},
  journal = {International Journal for Numerical Methods in Engineering},
  keywords = {bending shallow shell theory,central derivatives,chinh tran duc,finite
    difference,irregular,irregular networks,local effect,networks,one-side
    derivatives,shallow shell},
  mendeley-tags = {chinh tran duc}
}

@ARTICLE{TRANDUC1997a,
  author = {{TRAN DUC}, CHINH},
  title = {{CALCULATION OF SHALLOW SHELL SUBJECT TO INFLUENCE OF LOAD LOCAL
    EFFECT BY THE DIFFERENCE TECHNIQUE ON IRREGULAR NETWORKS}},
  year = {1997},
  volume = {40},
  number = {10},
  month = may,
  pages = {1749--1765},
  issn = {0029-5981},

  abstract = {In this paper},
  journal = {International Journal for Numerical Methods in Engineering},
  keywords = {bending shallow shell theory,central derivatives,chinh tran duc,duc
    chinh tran,finite difference,irregular,irregular networks,local effect,networks,one-side
    derivatives,shallow shell,tran duc chinh},
  mendeley-tags = {chinh tran duc,duc chinh tran,tran duc chinh}
}

@BOOK{Triboulet2009,
  author = {Triboulet, R. and Siffert, P.},
  title = {{CdTe and Related Compounds - Physics, Defects, Technology, Hetero
    - And Nanostructures and Applications: Crystal Growth, Surfaces and
    Applications}},
  year = {2009},
  publisher = {Elsevier},
  pages = {104},
  abstract = {Almost thirty years after the remarkable monograph of K. Zanio and
    the numerous conferences and articles dedicated since that time to
    CdTe and CdZnTe, after all the significant progresses in that field
    and the increasing interest in these materials for several extremely
    attractive industrial applications, such as nuclear detectors and
    solar cells, the edition of a new enriched and updated monograph
    dedicated to these two very topical II-VI semiconductor compounds,
    covering all their most prominent, modern and fundamental aspects,
    seemed very relevant and useful. Detailed coverage of the main topics
    associated with the very topical II-VI semiconductor compound CdTe
    and its alloy CZT Review of the CdTe recent developments Fundamental
    background of many topics clearly introduced and exposed}
}

@BOOK{Triboulet2009a,
  author = {Triboulet, Robert and Siffert, Paul},
  title = {{CdTe and Related Compounds - Physics, Defects, Technology, Hetero
    - And Nanostructures and Applications: Crystal Growth, Surfaces and
    Applications}},
  year = {2009},
  publisher = {Elsevier},
  pages = {279},
  abstract = {Almost thirty years after the remarkable monograph of K. Zanio and
    the numerous conferences and articles dedicated since that time to
    CdTe and CdZnTe, after all the significant progresses in that field
    and the increasing interest in these materials for several extremely
    attractive industrial applications, such as nuclear detectors and
    solar cells, the edition of a new enriched and updated monograph
    dedicated to these two very topical II-VI semiconductor compounds,
    covering all their most prominent, modern and fundamental aspects,
    seemed very relevant and useful. Detailed coverage of the main topics
    associated with the very topical II-VI semiconductor compound CdTe
    and its alloy CZT Review of the CdTe recent developments Fundamental
    background of many topics clearly introduced and exposed}
}

@ARTICLE{Tucoulou1999,
  author = {Tucoulou, R and Brunel, M and Roshchupkin, D V and Schelokov, I a
    and Colin, J and Grilhe, J},
  title = {{Electromigration in Al thin films induced by surface acoustic waves:
    application to imaging.}},
  year = {1999},
  volume = {46},
  number = {4},
  month = jan,
  pages = {856--60},
  issn = {0885-3010},
  doi = {10.1109/58.775650},

  abstract = {The propagation of a high amplitude surface acoustic wave in an Al
    thin film induces a large-scale electromigration phenomenon resulting
    in a permanent etching of the acoustic field in the film. The etched
    patterns depend on the time of propagation and on the acoustic characteristics.
    Preliminary observations of a few grooved structures in Al films
    have been performed by different techniques. A first explanation
    of this phenomenon based on dynamical Grinfeld instabilities is proposed.
    By providing permanent pictures of acoustic fields emitted by transducers,
    this effect could be used to perform imaging of surface acoustic
    wave propagation.},

  journal = {IEEE transactions on ultrasonics, ferroelectrics, and frequency control},
  pmid = {18238488}
}

@ARTICLE{Twigg1988,
  author = {Twigg, M. E. and Richmond, E. D.},
  title = {{Microtwin morphology and volume fraction for silicon on sapphire}},
  year = {1988},
  volume = {64},
  number = {6},
  pages = {3037},
  issn = {00218979},
  doi = {10.1063/1.341567},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Twigg1990,
  author = {Twigg, M. E. and Richmond, E. D. and Pellegrino, J. G.},
  title = {{Relief of compressive biaxial strains in thin films via microtwins}},
  year = {1990},
  volume = {67},
  number = {8},
  pages = {3706},
  issn = {00218979},
  doi = {10.1063/1.345036},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Uppal1985,
  author = {Uppal, Parvez N. and Kroemer, H.},
  title = {{Molecular beam epitaxial growth of {GaAs} on Si(211)}},
  year = {1985},
  volume = {93},
  number = {6},
  pages = {145},
  doi = {10.1063/1.335987},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Uppal1985a,
  author = {Uppal, P. N. and Kroemer, H.},
  title = {{Molecular beam epitaxial growth of {GaAs} on Si(211)}},
  year = {1985},
  volume = {58},
  number = {6},
  pages = {2195--2203},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Uppal1985b,
  author = {Uppal, Parvez N. and Kroemer, H.},
  title = {{Molecular beam epitaxial growth of {GaAs} on Si(211)}},
  year = {1985},
  volume = {93},
  number = {6},
  pages = {145},
  doi = {10.1063/1.335987},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Urrejola2011a,
  author = {Urrejola, E and Peter, K. and Plagwitz, H and Schubert, G.},
  title = {{Distribution of Silicon in the Aluminum Matrix for Rear Passivated
    Solar Cells}},
  year = {2011},
  volume = {8},
  number = {yy},
  month = jan,
  pages = {331--336},
  issn = {18766102},
  doi = {10.1016/j.egypro.2011.06.145},


  journal = {Energy Procedia},
  keywords = {aluminum-silicon contact,kirkendall,local back-surface-field,rear
    passivated solar cells,screen-printing,silicon diffusion in aluminum,voids}
}

@INPROCEEDINGS{Urrejola2009,
  author = {Urrejola, E and Peter, K. and Soiland, A. and Enebakk, E.},
  title = {{POCl3 DIFFUSION WITH IN-SITU SiO2 BARRIER FOR SELECTIVE {EMI}TTER
    MULTICRYSTALLINE SOLAR GRADE SILICON SOLAR CELLS}},
  booktitle = {24th EUPVSEC, Hamburg, Germany},
  year = {2009},
  number = {September},
  pages = {1835--1837},

  address = {Hamburg},

  keywords = {fiducial alignment,oxide barrier,selective emitter}
}

@INPROCEEDINGS{Uruena2010,
  author = {Urue\~{n}a, A. and Hern\'{a}ndez, J.L. and John, J. and Poortmans,
    J. and Mertens, R.},
  title = {{Controlling the Depth of the Local Al BSF in PERC Crystalline Solar
    Cells Using Alternative Back Side Metallization}},
  booktitle = {25th EUPVSEC, Valencia, Spain},
  year = {2010},
  pages = {2562 -- 2564},
  doi = {10.4229/25thEUPVSEC2010-2DV.1.40},

  keywords = {back contact,buffer layer,metallization}
}

@ARTICLE{Utama2011,
  author = {Utama, Muhammad Iqbal Bakti and Peng, Zeping and Chen, Rui and Peng,
    Bo and Xu, Xinlong and Dong, Yajie and Wong, Lai Mun and Wang, Shijie
    and Sun, Handong and Xiong, Qihua},
  title = {{Vertically aligned cadmium chalcogenide nanowire arrays on muscovite
    mica: a demonstration of epitaxial growth strategy.}},
  year = {2011},
  volume = {11},
  number = {8},
  month = aug,
  pages = {3051--7},
  issn = {1530-6992},
  doi = {10.1021/nl1034495},

  abstract = {We report a strategy for achieving epitaxial, vertically aligned cadmium
    chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van
    der Waals epitaxy with (001) muscovite mica substrate. The nanowires,
    grown from a vapor transport process, exhibited diameter uniformity
    throughout their length, sharp interface to the substrate, and positive
    correlation between diameter and length with preferential growth
    direction of [0001] for the monocrystalline wurtzite CdS and CdSe
    nanowires, but of [111] for zinc blende CdTe nanowires, which also
    featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid
    mechanism with hydrogen-assisted thermal evaporation is proposed
    to intepret the observations. Optical absorption from the as-grown
    CdSe nanowire arrays on mica at 10 K revealed intense first-order
    exciton absorption and its longitudinal optical phonon replica. A
    small Stokes shift (∼1.3 meV) was identified, suggesting the high
    quality of the nanowires. This study demonstrated the generality
    of van der Waals epitaxy for the growth of nanowire arrays and their
    potential applications in optical and energy related devices.},

  journal = {Nano letters},
  keywords = {3 nanowire,applications,applications ranging from,cadmium chalcogenides,cells
    2 to electrochemical,demon-,excitonic states,lasing 1 to solar,muscovite
    mica,nanowire array,nanowire arrays have been,self-catalytic,strated
    for potentially wide,uring the past decade,van der waals epitaxy},
  pmid = {21043505}
}

@ARTICLE{Utama2011a,
  author = {Utama, Muhammad Iqbal Bakti and Peng, Zeping and Chen, Rui and Peng,
    Bo and Xu, Xinlong and Dong, Yajie and Wong, Lai Mun and Wang, Shijie
    and Sun, Handong and Xiong, Qihua},
  title = {{Vertically aligned cadmium chalcogenide nanowire arrays on muscovite
    mica: a demonstration of epitaxial growth strategy.}},
  year = {2011},
  volume = {11},
  number = {8},
  month = aug,
  pages = {3051--7},
  issn = {1530-6992},
  doi = {10.1021/nl1034495},

  abstract = {We report a strategy for achieving epitaxial, vertically aligned cadmium
    chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van
    der Waals epitaxy with (001) muscovite mica substrate. The nanowires,
    grown from a vapor transport process, exhibited diameter uniformity
    throughout their length, sharp interface to the substrate, and positive
    correlation between diameter and length with preferential growth
    direction of [0001] for the monocrystalline wurtzite CdS and CdSe
    nanowires, but of [111] for zinc blende CdTe nanowires, which also
    featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid
    mechanism with hydrogen-assisted thermal evaporation is proposed
    to intepret the observations. Optical absorption from the as-grown
    CdSe nanowire arrays on mica at 10 K revealed intense first-order
    exciton absorption and its longitudinal optical phonon replica. A
    small Stokes shift (∼1.3 meV) was identified, suggesting the high
    quality of the nanowires. This study demonstrated the generality
    of van der Waals epitaxy for the growth of nanowire arrays and their
    potential applications in optical and energy related devices.},

  journal = {Nano letters},
  keywords = {3 nanowire,applications,applications ranging from,cadmium chalcogenides,cells
    2 to electrochemical,demon-,excitonic states,lasing 1 to solar,muscovite
    mica,nanowire array,nanowire arrays have been,self-catalytic,strated
    for potentially wide,uring the past decade,van der waals epitaxy},
  pmid = {21043505}
}

@ARTICLE{Utama2012,
  author = {Utama, Muhammad Iqbal Bakti and Zhang, Qing and Jia, Shuangfeng and
    Li, Dehui and Wang, Jianbo and Xiong, Qihua},
  title = {{Epitaxial II-VI tripod nanocrystals: a generalization of van der
    Waals epitaxy for nonplanar polytypic nanoarchitectures.}},
  year = {2012},
  volume = {6},
  number = {3},
  month = mar,
  pages = {2281--8},
  issn = {1936-086X},
  doi = {10.1021/nn204344z},

  abstract = {We report for the first time the synthesis of nonplanar epitaxial
    tripod nanocrystals of II-VI compounds (ZnO, ZnS, ZnSe, ZnTe, CdS,
    CdSe, and CdTe) on muscovite mica substrate. With CdS as a case study,
    we conclude via Raman spectroscopy and electron microscopy studies
    that the tripods, which are found to be polytypic, followed a seeded
    growth mechanism. The epitaxy, manifested by the in-plane alignment
    of the legs of the tripods within a substrate, is attributed to the
    van der Waals interaction between the tripod bases and the mica surface,
    instead of to the covalent chemical bond which would require lattice
    matching between the epilayer and the substrate. The results demonstrated
    herein could have widespread immediate implications, including the
    potential of van der Waals epitaxy to be applicable in producing
    ordered arrays of more complex nanoarchitectures from various classes
    of compounds toward a broad range of technological applications.},

  journal = {ACS nano},
  keywords = {attributed in the growth,for inorganic nanostructures has,heteroepitaxy,ii\`{a}vi
    semiconductor,muscovite mica,nanostructures,nanotripods,of single-phased,only
    been,van der waals epitaxy},
  pmid = {22352354}
}

@ARTICLE{Vajargah2011,
  author = {Vajargah, S. Hosseini and Couillard, M. and Cui, K. and Tavakoli,
    S. Ghanad and Robinson, B. and Kleiman, R. N. and Preston, J. S.
    and Botton, G. A.},
  title = {{Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial
    films grown on Si as revealed by high-angle annular dark-field scanning
    transmission electron microscopy}},
  year = {2011},
  volume = {98},
  number = {8},
  pages = {082113},
  issn = {00036951},
  doi = {10.1063/1.3551626},

  annote = { From Duplicate 1 ( Strain relief and AlSb buffer layer morphology
    in GaSb heteroepitaxial films grown on Si as revealed by high-angle
    annular dark-field scanning transmission electron microscopy - Vajargah,
    S. Hosseini; Couillard, M.; Cui, K.; Tavakoli, S. Ghanad; Robinson,
    B.; Kleiman, R. N.; Preston, J. S.; Botton, G. A. )




     },

  journal = {Applied Physics Letters}
}

@ARTICLE{Vajargah2011a,
  author = {Vajargah, S. Hosseini and Couillard, M. and Cui, K. and Tavakoli,
    S. Ghanad and Robinson, B. and Kleiman, R. N. and Preston, J. S.
    and Botton, G. A.},
  title = {{Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial
    films grown on Si as revealed by high-angle annular dark-field scanning
    transmission electron microscopy}},
  year = {2011},
  volume = {98},
  number = {8},
  pages = {082113},
  issn = {00036951},
  doi = {10.1063/1.3551626},


  journal = {Applied Physics Letters}
}

@ARTICLE{Vajargah2011c,
  author = {Vajargah, S. Hosseini and Couillard, M. and Cui, K. and Tavakoli,
    S. Ghanad and Robinson, B. and Kleiman, R. N. and Preston, J. S.
    and Botton, G. A.},
  title = {{Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial
    films grown on Si as revealed by high-angle annular dark-field scanning
    transmission electron microscopy}},
  year = {2011},
  volume = {98},
  number = {8},
  pages = {082113},
  issn = {00036951},
  doi = {10.1063/1.3551626},


  journal = {Applied Physics Letters}
}

@INPROCEEDINGS{VanDerHeide2004,
  author = {{Van Der Heide}, ASH and Bultman, J.H. and Goris, M. and Hoornstra,
    J},
  title = {{Influence of grain orientation on contact resistance at higher emitter
    resistances, investigated for alkaline and acid saw damage removal}},
  booktitle = {Photovoltaic Energy Conversion, 2003. Proceedings of 3\textsuperscript{rd}
    World Conference on},
  year = {2004},
  volume = {2},
  publisher = {IEEE},
  isbn = {4990181603},
  pages = {1036--1039},


}

@ARTICLE{Varesi2006,
  author = {Varesi, J. B. and Benson, J. D. and Jaime-Vasquez, M. and Martinka,
    M. and Stoltz, a. J. and Dinan, J. H.},
  title = {{Investigation of HgCdTe surface films and their removal}},
  year = {2006},
  volume = {35},
  number = {6},
  month = jun,
  pages = {1443--1448},
  issn = {0361-5235},
  doi = {10.1007/s11664-006-0281-z},

  journal = {Journal of Electronic Materials},
  keywords = {analysis,hgcdte,native oxide,spectroscopic ellipsometry,surface,x-ray
    photoelectron spectroscopy}
}

@ARTICLE{Vere1983,
  author = {Vere, A. W. and Cole, S and Williams, D. J.},
  title = {{The origins of twinning in cdTe}},
  year = {1983},
  volume = {12},
  number = {3},
  month = may,
  pages = {551--561},
  issn = {0361-5235},
  doi = {10.1007/BF02650863},


  journal = {Journal of Electronic Materials},
  keywords = {bridgman,cadmium telluride,czochralski,ionicity,mechanical deformation,twinning}
}

@ARTICLE{Vere1983a,
  author = {Vere, A. W. and Cole, S. and Williams, D. J.},
  title = {{The origins of twinning in cdTe}},
  year = {1983},
  volume = {12},
  number = {3},
  month = may,
  pages = {551--561},
  issn = {0361-5235},
  doi = {10.1007/BF02650863},

  journal = {Journal of Electronic Materials},
  keywords = {bridgman,cadmium telluride,czochralski,ionicity,mechanical deformation,twinning}
}

@ARTICLE{Vetter2004,
  author = {Vetter, M. and Martı́n, I. and Orpella, A and Puigdollers, J and
    Voz, C and R},
  title = {{IR-study of a-SiCx: H and a-SiCxNy: H films for c-Si surface passivation}},
  year = {2004},
  volume = {452},
  pages = {340--344},
  doi = {10.1016/j.tsf.2003.10.125},


  journal = {Thin Solid Films},
  keywords = {crystalline silicon,passivation,silicon carbide,silicon carbonitride,solar
    cell}
}

@ARTICLE{Vigilgalan2006,
  author = {Vigilgalan, O and Ariascarbajal, a and Mendozaperez, R and Santana,
    G and Sastrehernandez, J and Contreraspuente, G and Moralesacevedo,
    a and Tufinovelazquez, M},
  title = {{Spectral response of CdS/CdTe solar cells obtained with different
    S/Cd ratios for the CdS chemical bath}},
  year = {2006},
  volume = {90},
  number = {15},
  month = sep,
  pages = {2221--2227},
  issn = {09270248},
  doi = {10.1016/j.solmat.2006.02.020},

  annote = { From Duplicate 1 ( Spectral response of CdS/CdTe solar cells obtained
    with different S/Cd ratios for the CdS chemical bath - Vigilgalan,
    O; Ariascarbajal, a; Mendozaperez, R; Santana, G; Sastrehernandez,
    J; Contreraspuente, G; Moralesacevedo, a; Tufinovelazquez, M )


     From Duplicate 1 ( Spectral response of CdS/CdTe solar cells obtained
    with different S/Cd ratios for the CdS chemical bath - Vigilgalan,
    O; Ariascarbajal, a; Mendozaperez, R; Santana, G; Sastrehernandez,
    J; Contreraspuente, G; Moralesacevedo, a; Tufinovelazquez, M )






     },

  journal = {Solar Energy Materials and Solar Cells}
}

@ARTICLE{Vila1995,
  author = {Vil\`{a}, A. and Cornet, A. and Morante, J. R. and Ruterana, P. and
    Loubradou, M. and Bonnet, R. and Gonz\'{a}lez, Y. and Gonz\'{a}lez,
    L.},
  title = {{Atomic core structure of Lomer dislocations at {GaAs}/(001)Si interface}},
  year = {1995},
  volume = {71},
  number = {1},
  pages = {85--103},

  journal = {Philosophical Magazine A}
}

@ARTICLE{Vilfan1993,
  author = {Vilfan, Igor},
  title = {{Unbinding of double steps on vicinal Si (001) surfaces}},
  year = {1993},
  volume = {289},
  pages = {L604--L608},

  journal = {Surface Science}
}

@ARTICLE{Vilfan1993a,
  author = {Vilfan, Igor},
  title = {{Unbinding of double steps on vicinal Si (001) surfaces}},
  year = {1993},
  volume = {289},
  pages = {L604--L608},

  journal = {Surface Science}
}

@ARTICLE{Vuckovic2000,
  author = {Vuckovic, J and Loncar, M and Scherer, A},
  title = {{Surface plasmon enhanced light-emitting diode}},
  year = {2000},
  volume = {36},
  number = {10},
  pages = {1131--1144},

  annote = {ID: /00189197/36/10/1131\_speld.xml; From Ontario Scholars Portal
    (textfiles)},
  isbn = {0018-9197},
  journal = {Quantum Electronics, IEEE Journal of},
  keywords = {light emitting diodes,metallic thin films,micro-optics,optical pumping,optical
    resonators,photoluminescence,semiconductor thin films,spontaneous
    emission,surface plasmons},
  publisher = {IEEE}
}

@ARTICLE{Wadia2009,
  author = {Wadia, Cyrus and Alivisatos, a. Paul and Kammen, Daniel M.},
  title = {{Materials Availability Expands the Opportunity for Large-Scale Photovoltaics
    Deployment}},
  year = {2009},
  volume = {43},
  number = {6},
  month = mar,
  pages = {2072--2077},
  issn = {0013-936X},
  doi = {10.1021/es8019534},

  isbn = {5106421640},
  journal = {Environmental Science \& Technology}
}

@INCOLLECTION{Wagner1966,
  author = {Wagner, C. N. J.},
  editor = {Cohen, J. B. and Hilliard, J. E.},
  title = {{No Title}},
  booktitle = {Local Atomic Arrangements Studied by X-Ray Diffraction},
  year = {1966},
  publisher = {Gordon and Breach},
  pages = {224--225},
  address = {New York},
  annote = {TN 605 .L6}
}

@ARTICLE{Wang1987,
  author = {Wang, Fang and Schwartzman, Alan and Fahrenbruch, Alan L. and Sinclair,
    Robert and Bube, Richard H. and Stahle, Carl M.},
  title = {{Kinetics and oxide composition for thermal oxidation of cadmium
    telluride}},
  year = {1987},
  volume = {62},
  number = {4},
  pages = {1469},
  issn = {00218979},
  doi = {10.1063/1.339653},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wang2004,
  author = {Wang, X.C. and Lim, G.C. and Zheng, H.Y. and Ng, F.L. and Liu, W.
    and Chua, S.J.},
  title = {{Femtosecond pulse laser ablation of sapphire in ambient air}},
  year = {2004},
  volume = {228},
  number = {1-4},
  month = apr,
  pages = {221--226},
  issn = {01694332},
  doi = {10.1016/j.apsusc.2004.01.009},


  journal = {Applied Surface Science},
  keywords = {damage threshold,femtosecond pulse laser ablation,incubation effect,sapphire,self-focusing}
}

@ARTICLE{Wang2011a,
  author = {Wang, X. J. and Chang, Y. and Becker, C. R. and Grein, C. H. and
    Sivananthan, S. and Kodama, R.},
  title = {{Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy
    on Si(211) Substrates}},
  year = {2011},
  volume = {40},
  number = {8},
  month = may,
  pages = {1860--1866},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1648-3},

  journal = {Journal of Electronic Materials},
  keywords = {dislocations,molecular beam epitaxy,si,znte}
}

@ARTICLE{Wang2011c,
  author = {Wang, X. J. and Chang, Y. and Becker, C. R. and Grein, C. H. and
    Sivananthan, S. and Kodama, R.},
  title = {{Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy
    on Si(211) Substrates}},
  year = {2011},
  volume = {40},
  number = {8},
  month = may,
  pages = {1860--1866},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1648-3},

  journal = {Journal of Electronic Materials},
  keywords = {dislocations,molecular beam epitaxy,si,znte}
}

@ARTICLE{Wang2011d,
  author = {Wang, X. J. and Chang, Y. and Becker, C. R. and Grein, C. H. and
    Sivananthan, S. and Kodama, R.},
  title = {{Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy
    on Si(211) Substrates}},
  year = {2011},
  volume = {40},
  number = {8},
  month = may,
  pages = {1860--1866},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1648-3},

  journal = {Journal of Electronic Materials},
  keywords = {dislocations,molecular beam epitaxy,si,znte}
}

@ARTICLE{Wang2009a,
  author = {Wang, X. J. and Hou, Y. B. and Chang, Y. and Becker, C. R. and Klie,
    R. F. and Kang, T. W. and Sporken, R. and Sivananthan, S.},
  title = {{Heteroepitaxy of PbSe on {GaAs}(100) and {GaAs}(211)B by molecular
    beam epitaxy}},
  year = {2009},
  volume = {311},
  number = {8},
  month = apr,
  pages = {2359--2362},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2009.01.140},


  journal = {Journal of Crystal Growth}
}

@ARTICLE{Wang2011,
  author = {Wang, Y. and Ruterana, P. and Desplanque, L. and {El Kazzi}, S. and
    Wallart, X.},
  title = {{Strain relief at the GaSb/{GaAs} interface versus substrate surface
    treatment and AlSb interlayers thickness}},
  year = {2011},
  volume = {109},
  number = {2},
  pages = {023509},
  issn = {00218979},
  doi = {10.1063/1.3532053},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wang2011b,
  author = {Wang, Y. and Ruterana, P. and Desplanque, L. and {El Kazzi}, S. and
    Wallart, X.},
  title = {{Strain relief at the GaSb/{GaAs} interface versus substrate surface
    treatment and AlSb interlayers thickness}},
  year = {2011},
  volume = {109},
  number = {2},
  pages = {023509},
  issn = {00218979},
  doi = {10.1063/1.3532053},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wang2006,
  author = {Wang, Y.-Z. and Chen, L. and Wu, Y. and Wu, J. and Yu, M.-F. and
    He, L.},
  title = {{Heteroepitaxy of CdTe on tilting Si(211) substrates by molecular
    beam epitaxy}},
  year = {2006},
  volume = {290},
  number = {2},
  month = may,
  pages = {436--440},
  issn = {00220248},
  doi = {10.1016/j.jcrysgro.2006.01.048},


  journal = {Journal of Crystal Growth},
  keywords = {a1,a3,b1,cdte,high resolution x-ray diffraction,molecular beam epitaxy,shear
    strain,si}
}

@ARTICLE{Warekois1966,
  author = {Warekois, E. P.},
  title = {{Erratum: Crystallographic Polarity in the II-VI Compounds}},
  year = {1966},
  volume = {37},
  number = {5},
  pages = {2203},
  issn = {00218979},
  doi = {10.1063/1.1708786},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Warekois1962,
  author = {Warekois, E. P. and Lavine, M. C. and Mariano, a. N. and Gatos, H.
    C.},
  title = {{Crystallographic Polarity in the II-VI Compounds}},
  year = {1962},
  volume = {33},
  number = {2},
  pages = {690},
  issn = {00218979},
  doi = {10.1063/1.1702489},


  journal = {Journal of Applied Physics}
}

@BOOK{Warmuzek2004,
  author = {Warmuzek, M},
  title = {{Aluminum-silicon casting alloys: atlas of microfractographs}},
  year = {2004},
  publisher = {ASM International},

}

@ARTICLE{Wei1972,
  author = {Wei, P. S. P.},
  title = {{Structure of the (0001) Surface of $\alpha$-Alumina}},
  year = {1972},
  volume = {9},
  number = {4},
  month = jul,
  pages = {1209},
  issn = {00225355},
  doi = {10.1116/1.1317014},


  journal = {Journal of Vacuum Science and Technology}
}

@TECHREPORT{Wei2001,
  author = {Wei, S and Zhang, S B},
  title = {{Theoretical Study of Doping Limits of CdTe}},
  institution = {National Renewable Energy Laboratory},
  year = {2001},
  number = {October},
  pages = {4 pp},
  address = {Lakewood, Colorado},
  annote = { From Duplicate 2 ( Theoretical Study of Doping Limits of CdTe -
    Wei, S; Zhang, S B )


     From Duplicate 1 ( Theoretical Study of Doping Limits of CdTe - Wei,
    S; Zhang, S B )






     },
  booktitle = {October},

  keywords = {CdTe,NCPV,NREL/CP-590-31012,October 2001,PV,doping limits,photovoltaics},
  publisher = {National Renewable Energy Laboratory}
}

@ARTICLE{Wei2002,
  author = {Wei, Su-Huai and Zhang, S.B.},
  title = {{First-Principles Study of Doping Limits of CdTe}},
  year = {2002},
  volume = {229},
  number = {1},
  month = jan,
  pages = {305--310},
  issn = {0370-1972},
  doi = {10.1002/1521-3951(200201)229:1<305::AID-PSSB305>3.0.CO;2-3},


  journal = {physica status solidi (b)}
}

@ARTICLE{Wei1994,
  author = {Wei, X. L. and Aindow, M.},
  title = {{Development of anisotropic microtwin distributions in {GaAs} grown
    on 4°-off (001) Si by molecular beam epitaxy}},
  year = {1994},
  volume = {65},
  number = {15},
  pages = {1903--1905},
  issn = {00036951},
  doi = {10.1063/1.112834},


  journal = {Applied Physics Letters}
}

@ARTICLE{White1959,
  author = {White, J. G. and Roth, W. C.},
  title = {{Polarity of Gallium Arsenide Single Crystals}},
  year = {1959},
  volume = {30},
  number = {6},
  pages = {946},
  issn = {00218979},
  doi = {10.1063/1.1735270},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wicks1993,
  author = {Wicks, Gary},
  title = {{Molecular beam epitaxy of III-V semiconductors}},
  year = {1993},
  volume = {18},
  number = {3},
  pages = {239--260},
  issn = {1040-8436},
  doi = {10.1080/10408439308242561},


  journal = {Critical Reviews in Solid State and Materials Sciences},
  keywords = {gallium arsenide,molecular beam epitaxy,semiconductor}
}

@ARTICLE{Wicks1993a,
  author = {Wicks, Gary},
  title = {{Molecular beam epitaxy of III-V semiconductors}},
  year = {1993},
  volume = {18},
  number = {3},
  pages = {239--260},
  issn = {1040-8436},
  doi = {10.1080/10408439308242561},


  journal = {Critical Reviews in Solid State and Materials Sciences},
  keywords = {gallium arsenide,molecular beam epitaxy,semiconductor}
}

@ARTICLE{Willets2007,
  author = {Willets, Katherine a and {Van Duyne}, Richard P},
  title = {{Localized surface plasmon resonance spectroscopy and sensing.}},
  year = {2007},
  volume = {58},
  number = {October},
  month = jan,
  pages = {267--97},
  issn = {0066-426X},
  doi = {10.1146/annurev.physchem.58.032806.104607},

  abstract = {Localized surface plasmon resonance (LSPR) spectroscopy of metallic
    nanoparticles is a powerful technique for chemical and biological
    sensing experiments. Moreover, the LSPR is responsible for the electromagnetic-field
    enhancement that leads to surface-enhanced Raman scattering (SERS)
    and other surface-enhanced spectroscopic processes. This review describes
    recent fundamental spectroscopic studies that reveal key relationships
    governing the LSPR spectral location and its sensitivity to the local
    environment, including nanoparticle shape and size. We also describe
    studies on the distance dependence of the enhanced electromagnetic
    field and the relationship between the plasmon resonance and the
    Raman excitation energy. Lastly, we introduce a new form of LSPR
    spectroscopy, involving the coupling between nanoparticle plasmon
    resonances and adsorbate molecular resonances. The results from these
    fundamental studies guide the design of new sensing experiments,
    illustrated through applications in which researchers use both LSPR
    wavelength-shift sensing and SERS to detect molecules of chemical
    and biological relevance.},

  journal = {Annual review of physical chemistry},
  keywords = {Nanostructures,Nanostructures: chemistry,Nanostructures: ultrastructure,Spectrum
    Analysis,Surface Plasmon Resonance,Surface Plasmon Resonance: instrumentation,Surface
    Plasmon Resonance: methods},
  pmid = {17067281}
}

@ARTICLE{Windred1941,
  author = {Windred, G.},
  title = {{Electrical contact resistance}},
  year = {1941},
  volume = {231},
  number = {6},
  pages = {547--585},
  issn = {00160032},
  doi = {10.1016/S0016-0032(41)90159-X},

  journal = {Journal of the Franklin Institute}
}

@ARTICLE{Woehl2011,
  author = {Woehl, R. and Krause, J and Granek, F and Biro, D},
  title = {{19.7\% Efficient All-Screen-Printed Back-Contact Back-Junction Silicon
    Solar Cell With Aluminum-Alloyed Emitter}},
  year = {2011},
  volume = {32},
  number = {3},
  month = mar,
  pages = {345--347},
  issn = {0741-3106},
  doi = {10.1109/LED.2010.2097238},


  journal = {IEEE Electron Device Letters}
}

@ARTICLE{Wolf2010a,
  author = {Wolf, Andreas and Biro, Daniel and Nekarda, Jan and Stumpp, Stefan
    and Kimmerle, Achim and Mack, Sebastian and Preu, Ralf},
  title = {{Comprehensive analytical model for locally contacted rear surface
    passivated solar cells}},
  year = {2010},
  volume = {108},
  number = {12},
  pages = {124510},
  issn = {00218979},
  doi = {10.1063/1.3506706},

  annote = { From Duplicate 1 ( Comprehensive analytical model for locally contacted
    rear surface passivated solar cells - Wolf, Andreas; Biro, Daniel;
    Nekarda, Jan; Stumpp, Stefan; Kimmerle, Achim; Mack, Sebastian; Preu,
    Ralf )


     From Duplicate 1 ( Comprehensive analytical model for locally contacted
    rear surface passivated solar cells - Wolf, Andreas; Biro, Daniel;
    Nekarda, Jan; Stumpp, Stefan; Kimmerle, Achim; Mack, Sebastian; Preu,
    Ralf )






     },

  journal = {Journal of Applied Physics}
}

@INPROCEEDINGS{Wolf2010,
  author = {Wolf, A. and Wotke, Edgar A and Walczak, Alexandra and Mack, Sebastian
    and Bitnar, Bernd and Koch, Christian and Preu, Ralf and Biro, D.
    and Gmbh, Solarworld Innovations},
  title = {{PILOT LINE PROCESSING OF 18 . 6 \% EFFICIENT REAR SURFACE PASSIVATED
    LARGE AREA SOLAR CELLS}},
  booktitle = {proc. 35\textsuperscript{th} PVSC, Honolulu},
  year = {2010},
  pages = {18--22},

}

@ARTICLE{Won1987a,
  author = {Won, T. and Munns, G. and Houdré, R. and Morkoç, H.},
  title = {{Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor
    {GaAs}/Si with Ga and As prelayers’’ [Appl. Phys. Lett. 49, 1257
    (1986)]}},
  year = {1987},
  volume = {51},
  number = {21},
  pages = {1756},
  issn = {00036951},
  doi = {10.1063/1.98514},


  journal = {Applied Physics Letters}
}

@ARTICLE{Won1987c,
  author = {Won, T. and Munns, G. and Houdré, R. and Morkoç, H.},
  title = {{Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor
    {GaAs}/Si with Ga and As prelayers’’ [Appl. Phys. Lett. 49, 1257
    (1986)]}},
  year = {1987},
  volume = {51},
  number = {21},
  pages = {1756},
  issn = {00036951},
  doi = {10.1063/1.98514},


  journal = {Applied Physics Letters}
}

@ARTICLE{Won1986,
  author = {Won, T. and Munns, G. and Houdré, R. and Morkoç, H.},
  title = {{Interface charge polarity of a polar on nonpolar semiconductor {GaAs}/Si
    with Ga and As prelayers}},
  year = {1986},
  volume = {49},
  number = {19},
  pages = {1257},
  issn = {00036951},
  doi = {10.1063/1.97379},


  journal = {Applied Physics Letters}
}

@ARTICLE{Won1986a,
  author = {Won, T. and Munns, G. and Houdré, R. and Morkoç, H.},
  title = {{Interface charge polarity of a polar on nonpolar semiconductor {GaAs}/Si
    with Ga and As prelayers}},
  year = {1986},
  volume = {49},
  number = {19},
  pages = {1257},
  issn = {00036951},
  doi = {10.1063/1.97379},


  journal = {Applied Physics Letters}
}

@ARTICLE{Won1987,
  author = {Won, T. and Munns, G. and Unlu, M. S. and Unlu, H. and Chyi, J. and
    Morkoç, H.},
  title = {{Characteristics of p-{GaAs}/n-Si heterojunctions grown by molecular-beam
    epitaxy}},
  year = {1987},
  volume = {62},
  number = {9},
  month = mar,
  pages = {3860},
  issn = {00218979},
  doi = {10.1063/1.339230},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Won1987b,
  author = {Won, T. and Munns, G. and Unlu, M. S. and Unlu, H. and Chyi, J. and
    Morkoç, H.},
  title = {{Characteristics of p-{GaAs}/n-Si heterojunctions grown by molecular-beam
    epitaxy}},
  year = {1987},
  volume = {62},
  number = {9},
  month = mar,
  pages = {3860},
  issn = {00218979},
  doi = {10.1063/1.339230},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Woo2013,
  author = {Woo, S. Y. and Devenyi, G. A. and Ghanad-Tavakoli, S. and Kleiman,
    R. N. and Preston, J. S. and Botton, G. A.},
  title = {{Tilted epitaxy on (211)-oriented substrates}},
  year = {2013},
  volume = {102},
  number = {13},
  pages = {132103},
  issn = {00036951},
  doi = {10.1063/1.4799278},


  journal = {Applied Physics Letters}
}

@ARTICLE{Woo2012,
  author = {Woo, S. Y. and {Hosseini Vajargah}, S. and Ghanad-Tavakoli, S. and
    Kleiman, R. N. and Botton, G. A.},
  title = {{Direct observation of anti-phase boundaries in heteroepitaxy of
    GaSb thin films grown on Si(001) by transmission electron microscopy}},
  year = {2012},
  volume = {112},
  number = {7},
  pages = {074306},
  issn = {00218979},
  doi = {10.1063/1.4756957},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Woo,
  author = {Woo, S. Y. and Vajargah, S. H. and Ghanad-Tavakoli, S. and Kleiman,
    R. N. and Botton, G. A.},
  title = {{Observation of anti-phase boundaries in heteroepitaxy of GaSb thin
    films grown on Si(001) by transmission electron microscopy}},
  journal = {to be submitted}
}

@ARTICLE{Woodbury1966,
  author = {Woodbury, H. and Hall, R.},
  title = {{Se Self-Diffusion in CdSe and the Defect Structure of the II-VI
    Compounds}},
  year = {1966},
  volume = {17},
  number = {21},
  month = nov,
  pages = {1093--1095},
  issn = {0031-9007},
  doi = {10.1103/PhysRevLett.17.1093},

  journal = {Physical Review Letters}
}

@ARTICLE{Wright2009,
  author = {Wright, S.L. and Inada, M. and Kroemer, H.},
  title = {{Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation
    and growth of GaP on Si (211) surfaces}},
  year = {2009},
  volume = {21},
  number = {2},
  pages = {534--539},
  issn = {0022-5355},
  doi = {10.1116/1.571755},


  journal = {Journal of Vacuum Science and Technology},
  publisher = {AVS}
}

@ARTICLE{Wright1982a,
  author = {Wright, S.L. and Inada, M. and Kroemer, H.},
  title = {{Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation
    and growth of GaP on Si (211) surfaces}},
  year = {1982},
  volume = {21},
  number = {2},
  pages = {534--539},
  issn = {0022-5355},
  doi = {10.1116/1.571755},


  journal = {Journal of Vacuum Science and Technology},
  publisher = {AVS}
}

@ARTICLE{Wright1982b,
  author = {Wright, Steven L.},
  title = {{Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation
    and growth of GaP on Si(211) surfaces}},
  year = {1982},
  language = {en},
  volume = {21},
  number = {2},
  month = jul,
  pages = {534},
  issn = {00225355},
  doi = {10.1116/1.571755},


  journal = {Journal of Vacuum Science and Technology},
  keywords = {CHEMICAL BONDS,EPITAXY,GALLIUM PHOSPHIDES,INTERFACES,MORPHOLOGY,NUCLEATION,SILICON}
}

@ARTICLE{Wright1982,
  author = {Wright, S. L. and Inada, M. and Kroemer, H.},
  title = {{Polar-on-nonpolar epitaxy: Sublattice ordering in the nucleation
    and growth of GaP on Si(211) surfaces}},
  year = {1982},
  language = {en},
  volume = {21},
  number = {2},
  month = jul,
  pages = {534},
  issn = {00225355},
  doi = {10.1116/1.571755},


  journal = {Journal of Vacuum Science and Technology},
  keywords = {CHEMICAL BONDS,EPITAXY,GALLIUM PHOSPHIDES,INTERFACES,MORPHOLOGY,NUCLEATION,SILICON}
}

@ARTICLE{Wright1984,
  author = {Wright, S. L. and Kroemer, H. and Inada, M.},
  title = {{Molecular beam epitaxial growth of GaP on Si}},
  year = {1984},
  volume = {55},
  number = {8},
  pages = {2916},
  issn = {00218979},
  doi = {10.1063/1.333333},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wright1984a,
  author = {Wright, Steven L. and Kroemer, Herbert and Inada, Masanori},
  title = {{Molecular beam epitaxial growth of GaP on Si}},
  year = {1984},
  volume = {55},
  number = {8},
  pages = {2916},
  issn = {00218979},
  doi = {10.1063/1.333333},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Wu2001,
  author = {Wu, X. and Weatherly, G. C.},
  title = {{The first stage of stress relaxation in tensile strained In1-xGaxAs1-yPy
    films}},
  year = {2001},
  volume = {81},
  number = {6},
  month = jun,
  pages = {1489--1506},
  issn = {0141-8610},
  doi = {10.1080/01418610010005698},


  isbn = {0141861001000},
  journal = {Philosophical Magazine A}
}

@ARTICLE{Wu1993,
  author = {Wu, Y. S. and Becker, C. R. and Waag, a. and von Schierstedt, K.
    and Bicknell-Tassius, R. N. and Landwehr, G.},
  title = {{Surface sublimation of zinc blende CdTe}},
  year = {1993},
  volume = {62},
  number = {13},
  pages = {1510},
  issn = {00036951},
  doi = {10.1063/1.108623},


  journal = {Applied Physics Letters},
  keywords = {ACTIVATION ENERGY,CADMIUM TELLURIDES,EVAPORATION,PHOTOELECTRON SPECTROSCOPY,RHEED,SUBLIMATION,SURFACE
    RECONSTRUCTION}
}

@ARTICLE{Wu1993a,
  author = {Wu, Y. S. and Becker, C. R. and Waag, A. and von Schierstedt, K.
    and Bicknell-Tassius, R. N. and Landwehr, G.},
  title = {{Surface sublimation of zinc blende CdTe}},
  year = {1993},
  volume = {62},
  number = {13},
  pages = {1510},
  issn = {00036951},
  doi = {10.1063/1.108623},

  annote = { From Duplicate 1 ( Surface sublimation of zinc blende CdTe - Wu,
    Y. S.; Becker, C. R.; Waag, A.; von Schierstedt, K.; Bicknell-Tassius,
    R. N.; Landwehr, G. )




     },

  journal = {Applied Physics Letters},
  keywords = {ACTIVATION ENERGY,CADMIUM TELLURIDES,EVAPORATION,PHOTOELECTRON SPECTROSCOPY,RHEED,SUBLIMATION,SURFACE
    RECONSTRUCTION}
}

@ARTICLE{Xie1990,
  author = {Xie, Q. H. and Fung, K. K. and Ding, A. J. and Cai, L. H. and Huang,
    Y. and Zhou, J. M.},
  title = {{Asymmetric distribution of microtwins in a {GaAs}/Si heterostructure
    grown by molecular beam epitaxy}},
  year = {1990},
  volume = {57},
  number = {26},
  pages = {2803--2805},
  issn = {00036951},
  doi = {10.1063/1.103792},

  annote = {Now this one should look like my other one, fully noted and highlighted.},

  journal = {Applied Physics Letters}
}

@ARTICLE{Xin1998,
  author = {Xin, Y and Browning, N D and Rujirawat, S and Sivananthan, S and
    Chen, Y P},
  title = {{Investigation of the evolution of single domain „ 111 \ldots B CdTe
    films by molecular beam epitaxy on miscut „ 001 \ldots Si substrate}},
  year = {1998},
  volume = {84},
  number = {8},
  pages = {4292--4299},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Xin1998a,
  author = {Xin, Y and Browning, N D and Rujirawat, S and Sivananthan, S and
    Chen, Y P},
  title = {{Investigation of the evolution of single domain „ 111 \ldots B CdTe
    films by molecular beam epitaxy on miscut „ 001 \ldots Si substrate}},
  year = {1998},
  volume = {84},
  number = {8},
  pages = {4292--4299},

  journal = {Journal of Applied Physics}
}

@ARTICLE{Xu2009,
  author = {Xu, H. Y. and Guo, Y. N. and Wang, Y. and Zou, J. and Kang, J. H.
    and Gao, Q. and Tan, H. H. and Jagadish, C.},
  title = {{Effects of annealing and substrate orientation on epitaxial growth
    of {GaAs} on Si}},
  year = {2009},
  volume = {106},
  number = {8},
  pages = {083514},
  issn = {00218979},
  doi = {10.1063/1.3248372},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Xu1995,
  author = {Xu, J.},
  title = {{Stain-etched porous silicon visible light emitting diodes}},
  year = {1995},
  volume = {13},
  number = {3},
  month = may,
  pages = {1221},
  issn = {0734211X},
  doi = {10.1116/1.588240},


  journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer
    Structures}
}

@ARTICLE{Yablonovitch1990,
  author = {Yablonovitch, E. and Hwang, D. M. and Gmitter, T. J. and Florez,
    L. T. and Harbison, J. P.},
  title = {{Van der Waals bonding of {GaAs} epitaxial liftoff films onto arbitrary
    substrates}},
  year = {1990},
  volume = {56},
  number = {24},
  pages = {2419},
  issn = {00036951},
  doi = {10.1063/1.102896},


  journal = {Applied Physics Letters}
}

@ARTICLE{Yan2001,
  author = {Yan, Guizhen and Chan, P.C.H. and Hsing, I-ming and Others},
  title = {{An improved TMAH Si-etching solution without attacking exposed aluminum}},
  year = {2001},
  volume = {89},
  number = {1-2},
  pages = {135--141},


  journal = {Sensors and Actuators A: Physical},
  keywords = {aluminum,micro-electromechanical system,tmah},
  publisher = {Elsevier}
}

@ARTICLE{Yang2000,
  author = {Yang, B. and Xin, Y. and Rujirawat, S. and Browning, N. D. and Sivananthan,
    S.},
  title = {{Molecular beam epitaxial growth and structural properties of HgCdTe
    layers on CdTe(211)B/Si(211) substrates}},
  year = {2000},
  volume = {88},
  number = {1},
  pages = {115},
  issn = {00218979},
  doi = {10.1063/1.373631},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Yang2003,
  author = {Yang, C},
  title = {{The effects of viscosity and cooling conditions on the foamability
    of aluminum alloy}},
  year = {2003},
  volume = {141},
  number = {2},
  month = oct,
  pages = {202--206},
  issn = {09240136},
  doi = {10.1016/S0924-0136(02)01048-8},


  journal = {Journal of Materials Processing Technology},
  keywords = {aluminum foam,foaming mechanism,metal foam,titanium hydride,viscosity}
}

@ARTICLE{Yang2002,
  author = {Yang, Jihua and Zidon, Y. and Shapira, Yoram},
  title = {{Alloy composition and electronic structure of Cd[sub 1−x]Zn[sub
    x]Te by surface photovoltage spectroscopy}},
  year = {2002},
  volume = {91},
  number = {2},
  pages = {703},
  issn = {00218979},
  doi = {10.1063/1.1425071},

  annote = { From Duplicate 1 ( Alloy composition and electronic structure of
    Cd[sub 1−x]Zn[sub x]Te by surface photovoltage spectroscopy - Yang,
    Jihua; Zidon, Y.; Shapira, Yoram )


     From Duplicate 2 ( Alloy composition and electronic structure of
    Cd[sub 1−x]Zn[sub x]Te by surface photovoltage spectroscopy - Yang,
    Jihua; Zidon, Y.; Shapira, Yoram )






     },

  journal = {Journal of Applied Physics}
}

@ARTICLE{Yang2002a,
  author = {Yang, Jihua and Zidon, Y. and Shapira, Yoram},
  title = {{Alloy composition and electronic structure of Cd[sub 1−x]Zn[sub
    x]Te by surface photovoltage spectroscopy}},
  year = {2002},
  volume = {91},
  number = {2},
  pages = {703},
  issn = {00218979},
  doi = {10.1063/1.1425071},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Yang2010,
  author = {Yang, Rui Q. and Tian, Zhaobing and Klem, J. F. and Mishima, Tetsuya
    D. and Santos, Michael B. and Johnson, Matthew B.},
  title = {{Interband cascade photovoltaic devices}},
  year = {2010},
  volume = {96},
  number = {6},
  pages = {063504},
  issn = {00036951},
  doi = {10.1063/1.3313934},


  journal = {Appl. Phys. Lett.}
}

@ARTICLE{Yang1996,
  author = {Yang, Y. and Chen, H. and Zhou, Y. Q. and Mei, X. B. and Huang, Q.
    and Zhou, J. M. and Li, F. H.},
  title = {{TEM study of the structure of {GaAs} on vicinal Si(001) surface
    grown by MBE}},
  year = {1996},
  volume = {31},
  pages = {829--833},

  journal = {Journal of Materials Science}
}

@ARTICLE{Yanina2002,
  author = {Yanina, Svetlana V and {Barry Carter}, C},
  title = {{Terraces and ledges on (0 0 1) spinel surfaces}},
  year = {2002},
  volume = {513},
  number = {2},
  pages = {L402--L412},

  isbn = {0039-6028},
  journal = {Surface Science},
  keywords = {Atomic force microscopy,Evaporation and sublimation,Faceting,Single
    crystal surfaces,Step formation and bunching,Surface structure, morphology,
    roughness, and topo}
}

@ARTICLE{Yasuda2007,
  author = {Yasuda, K. and Niraula, M. and Nakamura, K. and Yokota, M. and Shingu,
    I. and Noda, K. and Agata, Y. and Abe, K. and Eryu, O.},
  title = {{Excimer Laser Etching Process of CdTe Crystals for Formation of
    Deep Vertical Trenches}},
  year = {2007},
  volume = {36},
  number = {8},
  month = apr,
  pages = {837--840},
  issn = {0361-5235},
  doi = {10.1007/s11664-007-0105-9},

  isbn = {1166400701059},
  journal = {Journal of Electronic Materials},
  keywords = {cdte,deep isolation trenches,excimer laser etching,surface}
}

@ARTICLE{Young2002,
  author = {Young, P a},
  title = {{Lattice parameter measurements on molybdenum disulphide}},
  year = {2002},
  volume = {vol 5},
  number = {7},
  month = may,
  pages = {238--938},
  doi = {10.1088/0022-3727/1/7/416},

  journal = {Journal of Physics D: Applied Physics}
}

@ARTICLE{Yu1970,
  author = {Yu, A. Y. C.},
  title = {{Electron tunneling and contact resistance of metal-silicon contact
    barriers}},
  year = {1970},
  volume = {13},
  number = {2},
  pages = {239--247},


  journal = {Solid-St. Electron.},
  publisher = {Elsevier}
}

@ARTICLE{Yu1999,
  author = {Yu, F.},
  title = {{Tilt angles at the CdTe/CdZnTe, HgCdTe/ CdTe, CdTe/{GaAs} heterojunctions
    grown by molecular beam epitaxy}},
  year = {1999},
  volume = {204},
  pages = {35--40},


  journal = {Journal of Crystal Growth},
  keywords = {molecular beam epitaxy,tilt angles,xdcd}
}

@ARTICLE{Yuen2012,
  author = {Yuen, Avery P. and Jovanovic, Stephen M. and Hor, Ah-Mee and Klenkler,
    Richard a. and Devenyi, Gabriel a. and Loutfy, Rafik O. and Preston,
    John S.},
  title = {{Photovoltaic properties of M-phthalocyanine/fullerene organic solar
    cells}},
  year = {2012},
  volume = {86},
  number = {6},
  month = jun,
  pages = {1683--1688},
  issn = {0038092X},
  doi = {10.1016/j.solener.2012.03.019},


  journal = {Solar Energy},
  keywords = {bilayer,bulk heterojunction,crystallinity,fullerene,mobility,phthalocyanine},
  publisher = {Elsevier Ltd}
}

@ARTICLE{Yujie2003,
  author = {Yujie, Li and Guoli, Ma and Wanqi, Jie},
  title = {{Point defects in CdTe}},
  year = {2003},
  volume = {256},
  number = {3-4},
  month = sep,
  pages = {266--275},
  issn = {00220248},
  doi = {10.1016/S0022-0248(03)01373-3},


  journal = {Journal of Crystal Growth},
  keywords = {a1,annealing,cd partial pressure,defect concentrations,point defects,quasichemical
    equilibrium}
}

@ARTICLE{Zakharov1994,
  author = {Zakharov, Oleg and Rubio, Angel and Blase, X and Cohen, Marvin and
    Louie, Steven},
  title = {{Quasiparticle band structures of six II-VI compounds: ZnS, ZnSe,
    ZnTe, CdS, CdSe, and CdTe}},
  year = {1994},
  volume = {50},
  number = {15},
  month = oct,
  pages = {10780--10787},
  issn = {0163-1829},
  doi = {10.1103/PhysRevB.50.10780},

  journal = {Physical Review B}
}

@ARTICLE{Zanio1970,
  author = {Zanio, Kenneth},
  title = {{Chemical Diffusion in Cadmium Telluride}},
  year = {1970},
  volume = {41},
  number = {5},
  pages = {1935},
  issn = {00218979},
  doi = {10.1063/1.1659145},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Zanio1969,
  author = {Zanio, K. R.},
  title = {{Characterization of Foreign Atoms and Native Defects in Single Crystals
    of Cadmium Telluride By High-Temperature Conductivity Measurements}},
  year = {1969},
  volume = {15},
  number = {8},
  pages = {260},
  issn = {00036951},
  doi = {10.1063/1.1652992},


  journal = {Applied Physics Letters}
}

@ARTICLE{Zhanabergenov2003,
  author = {Zhanabergenov, Zh. and Mirsagatov, Sh. a. and Karazhanov, S. Zh.},
  title = {{Radiation-stimulated processes in CdTe solar cells}},
  year = {2003},
  volume = {29},
  number = {12},
  month = dec,
  pages = {1052--1054},
  issn = {1063-7850},
  doi = {10.1134/1.1639471},

  journal = {Technical Physics Letters}
}

@ARTICLE{Zhang1997a,
  author = {Zhang, X and Chu, SS and Ho, JR and Grigoropoulos, CP},
  title = {{Excimer laser ablation of thin gold films on a quartz crystal microbalance
    at various argon background pressures}},
  year = {1997},
  volume = {64},
  number = {6},
  pages = {545--552},
  issn = {0947-8396},


  journal = {Applied Physics A: Materials Science \& Processing},
  publisher = {Springer}
}

@PHDTHESIS{Zhang2009a,
  author = {Zhang, Yuepeng},
  title = {{SYNTHESIS AND FUNCTIONAL PROPERTIES OF Ni-Mn-Ga {FER}{ROM}AGNETIC
    SHAPE MEMORY THIN FILMS}},
  year = {2009},
  abstract = {The purpose of this work was to develop a growth pathway for synthesis
    of high-quality ferromagnetic Ni-Mn-Ga shape memory thin films and
    to understand their functional properties. Two groups of Ni-Mn-Ga
    films were prepared using the pulsed laser deposition technique.
    One group was grown on (100) YSZ ((Zr,Y)O2 with ZrO2:Y2O2=92:8) and
    was used to study the thermal, magnetic, and magnetocaloric properties.
    The other group was deposited on (100) MgO. These films were fabricated
    into free-standing micro-bridges. These Ni-Mn-Ga films were synthesized
    in a previously unexplored high temperature deposition regime. The
    temperatures employed encouraged the development of the desired micrometer-size
    highly twinned martensitic grain structure while the general problem
    of preferential evaporation of the volatile elements at elevated
    temperatures was solved by using a manganese and gallium enriched
    target. The films grown on (100) YSZ exhibit a self-reversible, magnetically
    induced reorientation of the martensite variants (MIR), which is
    temperature dependent. The mechanism iii associated with the self-activated
    reversibility in the MIR effect was established through a detailed
    characterization of the texture, microstructure, and magnetic domain
    structure of the films. The synthesized films also show a large magnetocaloric
    effect (MCE), which is particularly strong at low magnetic fields.
    The effect is associated with an overlapped secondorder ferromagnetic
    and first-order martensitic phase transition. Detailed characterization
    of these transitions allow for an understanding of the role each
    phase transition plays in determining the level of enhancement to
    a standard MCE governed only by the second-order ferromagnetic phase
    transition. Ni-Mn-Ga free-standing micro-bridges were fabricated
    using photolithography followed by wet chemical etching. Microstructural
    evolution of the martensitic variants resulting from changes to the
    stress field in the detached areas was studied in the context of
    potential film applications for micro-actuators.},
  school = {McMaster University}
}

@ARTICLE{Zhang2009,
  author = {Zhang, Yuepeng and Hughes, R a and Britten, J F and Gong, Wenhe and
    Preston, J S and Botton, G a and Niewczas, M},
  title = {{Epitaxial Ni-Mn-Ga films derived through high temperature in situ
    depositions}},
  year = {2009},
  volume = {18},
  number = {2},
  month = feb,
  pages = {025019},
  issn = {0964-1726},
  doi = {10.1088/0964-1726/18/2/025019},


  journal = {Smart Materials and Structures}
}

@ARTICLE{Zhang2010,
  author = {Zhang, Yuepeng and Hughes, RA and Britten, JF},
  title = {{Self-activated reversibility in the magnetically induced reorientation
    of martensitic variants in ferromagnetic Ni-Mn-Ga films}},
  year = {2010},
  volume = {81},
  pages = {054406},
  doi = {10.1103/PhysRevB.81.054406},


  journal = {Physical Review B}
}

@ARTICLE{Zhang2007,
  author = {Zhang, Yousheng and Liu, Lilin and Zhang, Tong-Yi},
  title = {{Strain relaxation in heteroepitaxial films by misfit twinning: II.
    Equilibrium morphology}},
  year = {2007},
  volume = {101},
  number = {6},
  pages = {063502},
  issn = {00218979},
  doi = {10.1063/1.2433547},


  journal = {Journal of Applied Physics}
}

@ARTICLE{Zhao2011,
  author = {Zhao, W. F. and Jacobs, R. N. and Jaime-Vasquez, M. and Bubulac,
    L. O. and Smith, D. J.},
  title = {{Mi\-cro\-structural Characterization of CdTe(211)B\-/ZnTe\-/Si(211) Hetero\-structures
    Grown by Molecular Beam Epitaxy}},
  year = {2011},
  volume = {40},
  number = {8},
  month = jun,
  pages = {1733--1737},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1673-2},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,haadf,high-angle annular-dark-field,imaging,tem,transmission
    electron microscopy,znte}
}

@ARTICLE{Zhao2011a,
  author = {Zhao, W. F. and Jacobs, R. N. and Jaime-Vasquez, M. and Bubulac,
    L. O. and Smith, D. J.},
  title = {{Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures
    Grown by Molecular Beam Epitaxy}},
  year = {2011},
  volume = {40},
  number = {8},
  month = jun,
  pages = {1733--1737},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1673-2},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,haadf,high-angle annular-dark-field,imaging,tem,transmission
    electron microscopy,znte}
}

@ARTICLE{Zhao2011b,
  author = {Zhao, W. F. and Jacobs, R. N. and Jaime-Vasquez, M. and Bubulac,
    L. O. and Smith, David J.},
  title = {{Microstructural Characterization of CdTe(211)B/ZnTe/Si(211) Heterostructures
    Grown by Molecular Beam Epitaxy}},
  year = {2011},
  volume = {40},
  number = {8},
  month = jun,
  pages = {1733--1737},
  issn = {0361-5235},
  doi = {10.1007/s11664-011-1673-2},

  journal = {Journal of Electronic Materials},
  keywords = {cdte,haadf,high-angle annular-dark-field,imaging,tem,transmission
    electron microscopy,znte}
}

@ARTICLE{Zhigilei2003,
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@ARTICLE{Zhu2009,
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  issn = {13596454},
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  annote = {Totally cool paper about twinning in fcc systems (metals), goes to
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  journal = {Acta Materialia},
  keywords = {dislocations,interfaces,nanocrystalline materials,twin boundaries,twinning},
  publisher = {Acta Materialia Inc.}
}

@ARTICLE{Zhukovskii1998,
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  journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam
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  keywords = {adhesion,adsorption,ag,agaa-al 2 o 3,electron correlation,fock method,hartree,interface,mgo}
}

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