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page.parameters
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#parameter file
dram capacity = 0; #the unit is B 500MB
granularity num = 4
granularity channel[0] = 1
granularity channel[1] = 1
granularity channel[2] = 1
granularity channel[3] = 13
granularity channel[4] = 0
granularity channel[5] = 0
granularity channel[6] = 0
granularity channel[7] = 0
granularity size[0] = 2048 # 4k
granularity size[1] = 4096 # 8k
granularity size[2] = 8192 # 16k
granularity size[3] = 16384 # 16k
chip number[0] = 2;
chip number[1] = 2;
chip number[2] = 0;
chip number[3] = 0;
chip number[4] = 0;
chip number[5] = 0;
chip number[6] = 0;
chip number[7] = 0;
chip number[8] = 0;
chip number[9] = 0;
chip number[10] = 0;
chip number[11] = 0;
chip number[12] = 0;
chip number[13] = 0;
chip number[14] = 0;
chip number[15] = 0;
chip number[16] = 0;
chip number[17] = 0;
chip number[18] = 0;
channel number = 32; #the number of channel
chip number = 4;
die number = 2;
plane number = 2;
block number = 32;
page number = 32;
subpage page = 32;
page capacity = 16384;
block capacity = 524288;
subpage capacity = 512;
t_PROG = 289256; #the unit is ns
t_DBSY = 50;
t_BERS = 1500000;
t_CLS = 12;
t_CLH = 5;
t_CS = 20;
t_CH = 5;
t_WP = 12;
t_ALS = 12;
t_ALH = 5;
t_DS = 12;
t_DH = 5;
t_WC = 25;
t_WH = 10;
t_ADL = 70;
t_R = 35000;
t_AR = 10;
t_CLR = 10;
t_RR = 20;
t_RP = 12;
t_WB = 100;
t_RC = 25;
t_REA = 30;
t_CEA = 45;
t_RHZ = 100;
t_CHZ = 30;
t_RHOH = 15;
t_RLOH = 5;
t_COH = 15;
t_REH = 10;
t_IR = 0;
t_RHW = 100;
t_WHR = 60;
t_RST = 5000;
erase limit=100000; #record the erasure number of block
flash operating current=25000.0; #unit is uA
flash supply voltage=3.3; #voltage is 3.3V
dram active current=125000; #active current of DRAM��unit is uA
dram standby current=50000; #standby current of DRAM��unit is uA
dram refresh current=5000; #refresh current of DRAM��unit is uA
dram voltage=3.3; #working voltage of DRAM��unit is V 3.3V
address mapping=1; #mapping schemes��1��page��2��block��3��fast
wear leveling=1; #WL�㷨
gc=1; #��¼gc����
overprovide=0.20;
gc threshold=0.30; #���ﵽ�����ֵʱ����ʼGC������������д�����У���ʼGC�����������ʱ�ж�GC�����������µ�����������ͨ�����У�GC�����ж�
buffer management=0; #��ʾ����buffer�Ĺ���
scheduling algorithm=1; #��¼ʹ�����ֵ����㷨��1:FCFS
gc hard threshold=0.3; #��ͨ�������ò����ò�����ֻ��������д�����У������������ֵʱ��GC���������ж�
allocation=0; #ȷ�����䷽ʽ��0��ʾ��̬���䣬1��ʾ��̬����
static_allocation=2; #��¼�����־�̬���䷽ʽ����ICS09��ƪ�������������о�̬���䷽ʽ0��1��2��3��4��5��6��
dynamic_allocation=0; #��¼�ڲ������ֶ�̬���䷽ʽ��0��ʾȫ��̬��1��ʾchannel��package��die��plane��̬��2��ʾchannel��package��die��plane��̬
advanced command=28; #�Ƿ�ʹ�ø����0��ʾ��ʹ�á����ö�����01�ֱ��ʾrandom(00001)��copyback(00010)��two-plane-program(00100)��interleave(01000),two-plane-read(10000)�Ƿ�ʹ�ã�ȫ��ʹ����11111����31��
advanced command priority=0; #0��ʾinterleave���ȼ�����two plane��1��ʾtwo plane���ȼ�����interleave
greed CB command=0; #��ʾ�Ƿ�̰����ʹ��copyback�����0��ʾ��1��ʾ��̰����ʹ��
greed MPW command=1; #��ʾ�Ƿ�̰����ʹ��multi-plane write�����0��ʾ��1��ʾ��̰����ʹ��
aged=1; #1��ʾ��Ҫ�����SSD���aged��0��ʾ��Ҫ�����SSD����non-aged
aged ratio=0.65; #��ʾΪ��ʹSSD���aged��SSD����Ҫ��SSD����ǰ��ΪʧЧ�ı���