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.. _diode_theory: | ||
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Position sensitive detector | ||
--------------------------- | ||
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The previous section introduced the origin of the frequency spectrum of a bead in an optical trap. | ||
In reality, our measurement is affected by two processes: | ||
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1. The motion of the bead in the trap. | ||
2. The response of the detector to the incident light. | ||
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.. image:: figures/diode_filtering.png | ||
:nbattach: | ||
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This second factor depends on the type of measurement device being used. | ||
Typical position sensitive detectors are made of silicon. | ||
Such a detector has a very high bandwidth for visible light (in the MHz range). | ||
Unfortunately, the bandwidth is markedly reduced for the near infra-red light of the trapping laser :cite:`berg2003unintended,berg2006power`. | ||
This makes it less sensitive to changes in signal at high frequencies. | ||
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Why is the bandwidth limited? | ||
^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ | ||
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The high bandwidth of visible light detection of a silicon photodiode is achieved when incoming photons are absorbed in the so-called depletion layer of the diode. | ||
Unfortunately, silicon has an increased transparency at the near infra-red wavelength of the trapping laser. | ||
The result of this is that light penetrates deeper into the substrate of the diode, where it generates charge carriers in a different region of the diode. | ||
These charge carriers then have to diffuse back to the depletion layer, which takes time. | ||
As a result, a fraction of the signal has a much slower dynamic response (i.e. a lower bandwidth). | ||
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.. image:: figures/diode.png | ||
:nbattach: | ||
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This effect is often referred to as the parasitic filtering effect and is frequently modelled as a first order lowpass filter. | ||
This model is characterized by two numbers whose values depend on the incident laser power :cite:`berg2003unintended`: | ||
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- A frequency `f_diode`, given in Hertz. | ||
- A unit-less relaxation factor `alpha` which reflects the fraction of light that is transmitted instantaneously. | ||
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.. _high_corner_freq: | ||
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High corner frequencies | ||
^^^^^^^^^^^^^^^^^^^^^^^ | ||
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In literature, the diode parameters are frequently estimated simultaneously with the calibration data :cite:`berg2003unintended,hansen2006tweezercalib,berg2006power,tolic2006calibration,tolic2004matlab,berg2004power`. | ||
Unfortunately, this can cause issues when calibrating at high powers. | ||
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Recall that the physical spectrum is characterized by a corner frequency `fc`, and diffusion constant `D`. | ||
The corner frequency depends on the laser power and bead size (smaller beads resulting in higher corner frequencies). | ||
The parasitic filtering effect also has a corner frequency (`f_diode`) and depends on the incident intensity :cite:`berg2003unintended`. | ||
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When these two frequencies get close, they cannot be estimated from the power spectrum reliably anymore. | ||
The reason for this is that the effects that these parameters have on the power spectrum becomes very similar. | ||
When working with small beads or at high laser powers, it is important to verify that the corner frequency `fc` does not approach the frequency of the filtering effect `f_diode`. | ||
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Sometimes, the parameters of this diode have been characterized independently. | ||
In that case, the arguments `fixed_diode` and `fixed_alpha` can be passed to :func:`~lumicks.pylake.calibrate_force()` to fix these parameters to their predetermined values resolving this issue. | ||
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Mathematical background | ||
^^^^^^^^^^^^^^^^^^^^^^^ | ||
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In literature, it is frequently modelled up to good accuracy with a first order approximation :cite:`berg2003unintended,tolic2006calibration,berg2006power`. | ||
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.. math:: | ||
g(f, f_\mathrm{diode}, \alpha) = \alpha^2 + \frac{1 - \alpha ^ 2}{1 + (f / f_\mathrm{diode})^2} \tag{$-$} |
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